TO Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 088R06VT SW088R06VT TO-220 TUBE. Symbol Parameter Value Unit
|
|
- Gabriella Parrish
- 5 years ago
- Views:
Transcription
1 Features High ruggedness Low R DS(ON) (Typ 10mΩ)@V GS =4.5V Low R DS(ON) (Typ 8.2mΩ)@V GS =10V Low Gate Charge (Typ 48nC) Improved dv/dt Capability 100% Avalanche Tested Application: Electronic Ballast, Motor Control Synchronous Rectification, Inverter General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Absolute maximum ratings Symbol Parameter Value Unit S Drain to source voltage 60 V I Continuous drain current (@T C =25 o C) 100* A D Continuous drain current (@T C =100 o C) 63* A I DM Drain current pulsed (note 1) 400 A V GS Gate to source voltage ± 20 V E AS Single pulsed avalanche energy (note 2) 122 mj E AR Repetitive avalanche energy (note 1) 12 mj dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation (@Tc=25 o C) 195 W P D Derating factor above 25 o C 1.6 W/ o C T STG, T J Operating junction temperature & storage temperature -55 ~ o C T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics N-channel Enhanced mode TO-220 MOSFET 1 Item Sales Type Marking Package Packaging 1 SW P 088R06VT TO-220 TUBE 300 o C Symbol Parameter Value Unit 2 3 TO Gate 2. Drain 3. Source BS : 60V R thjc Thermal resistance, Junction to case 0.64 o C/W R thja Thermal resistance, Junction to ambient 52 o C/W I D : 100A R DS(ON) : 10mΩ@V GS =4.5V 1 8.2mΩ@V GS =10V 2 3 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar Rev /6
2 Electrical characteristic ( T C = 25 o C unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off ch188aracteristics BS Drain to source breakdown voltage V GS =0V, I D =250uA 60 V ΔBS Breakdown voltage temperature / ΔT J coefficient I D =250uA, referenced to 25 o C 0.05 V/ o C I DSS Drain to source leakage current =60V, V GS =0V 1 ua =48V, T C =125 o C 50 ua Gate to source leakage current, forward V GS =20V, =0V 100 na I GSS Gate to source leakage current, reverse V GS =-20V, =0V -100 na On characteristics V GS(TH) Gate threshold voltage =V GS, I D =250uA V R DS(ON) Drain to source on state resistance V GS =4.5V, I D =50A mω V GS =10V, I D =50A mω V GS =10V, I D =100A mω G fs Forward transconductance =5V, I D =50A 97 S Dynamic characteristics C iss Input capacitance C oss Output capacitance V GS =0V, =30V, f=1mhz 205 C rss Reverse transfer capacitance 153 t d(on) Turn on delay time 12 =30V, I D =30A, R G =25Ω, t r Rising time 65 V GS =10V t d(off) Turn off delay time 149 (note 4,5) t f Fall time 102 Q g Total gate charge =48V, V GS =10V, I D =30A, 48 Q gs Gate-source charge Ig=4mA 6 Q gd Gate-drain charge (note 4,5) 17 R g Gate resistance =0V, Scan F mode 1.1 Ω Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction 100 A I SM Pulsed source current diode in the MOSFET 400 A V SD Diode forward voltage drop. I S =100A, V GS =0V 1.4 V t rr Reverse recovery time I S =30A, V GS =0V, 27 ns Q rr Reverse recovery charge di F /dt=100a/us 13 nc. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =0.27mH, I AS =30A, V DD =50V, R G =25Ω, Starting T J = 25 o C 3. I SD 30A, di/dt = 100A/us, V DD BS, Staring T J =25 o C 4. Pulse Test : Pulse Width 300us, duty cycle 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar Rev / pf ns nc
3 Fig. 1. On-state characteristics Fig. 2. Transfer characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar Rev /6
4 Fig. 7. Gate charge characteristics Fig. 8. Capacitance Characteristics Fig. 9. Maximum safe operating area Fig. 10. Transient thermal response curve SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar Rev /6
5 Fig. 11. Gate charge test circuit & waveform Fig. 12. Switching time test circuit & waveform R L 90% R GS V DD V IN 10% 10% 10V IN DUT t d(on) t r t d(off) t f t ON t OFF Fig. 13. Unclamped Inductive switching test circuit & waveform Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar Rev /6
6 Fig. 14. Peak diode recovery dv/dt test circuit & waveform DUT + V GS (DRIVER) 10V I S - L I S (DUT) di/dt I RM R G V DD Diode reverse current 10V GS Same type as DUT (DUT) Diode recovery dv/dt V F V DD *. dv/dt controlled by RG *. Is controlled by pulse period Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in XI AN SEMIPOWER TESTING & APPLICATION CENTE R. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site ( * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar Rev /6
TO-220SF. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW MN 12N65DA SW12N65DA TO-220SF TUBE. Symbol Parameter Value Unit
Features High ruggedness Low R DS(ON) (Typ 0.75Ω)@V GS =10V Low Gate Charge (Typ 43nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, Charge, PC Power Order Codes Absolute maximum ratings
More informationTO-220 TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 7N65 SW7N65 TO-220 TUBE 2 SW F 7N65 SW7N65 TO-220F TUBE
N-channel Enhanced mode TO-220F/TO-220 MOSFET Features High ruggedness Low R DS(ON) (Typ 1.2Ω)@V GS =10V Low Gate Charge (Typ32 nc) Improved dv/dt Capability 100% Avalanche Tested Application: Charge,LED,PC
More informationTO-92. Item Sales Type Marking Package Packaging 1 SWC 2N40D SW2N40D TO-92 TAPE 2 SW SA 2N40D SW2N40D SOT-223 REEL
N-channel Enhanced mode TO-92/SOT-223 MOSFET Features High ruggedness Low R DS(ON) (Typ 2.8Ω)@V GS =10V Low Gate Charge (Typ 7nC) Improved dv/dt Capability 100% Avalanche Tested Application:DC-DC,LED TO-92
More informationSW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET
N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features High ruggedness Low R DS(ON) (Typ 0.67Ω)@V GS =10V Low Gate Charge (Typ 30nC) Improved dv/dt Capability 100% Avalanche Tested
More informationN-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET TO-262 TO Gate 2. Drain 3. Source
N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET Features High ruggedness Low R DS(ON) (Typ 0.23Ω)@V GS =10V Low Gate Charge (Typ 42nC) Improved dv/dt Capability 100% Avalanche Tested Application:
More informationValue TO220 TO220F TO251N TO252 TO262 TO220SF V DSS Drain to source voltage 650 V
Features High ruggedness Low R DS(ON) (Typ 0.36Ω)@V GS =10V Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, Charge, PC Power Order Codes Absolute maximum ratings
More informationTO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 2.2 Ω)@V GS =0V Gate Charge (Typ 30nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 TO-220F 2 3 TO-220 BS : 600V I D : 4.0A R DS(ON) : 2.2ohm
More informationTO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This
More informationTO-220 G. T C = 25 C unless otherwise noted. Drain-Source Voltage 80 V. Symbol Parameter MSP120N08G Units R θjc
MSP120N08G 80V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s advanced technology. which provides high performance in on-state resistance, fast switching
More informationHFI50N06A / HFW50N06A 60V N-Channel MOSFET
HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche
More informationHRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET
HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More informationHFP4N65F / HFS4N65F 650V N-Channel MOSFET
HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016
More informationHCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET
HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested
More informationT C =25 unless otherwise specified
500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
More informationHCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET
HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching
More informationSLD8N6 65S / SLU8N65 5S
SLD8N65S / SLU8N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More informationHCD80R600R 800V N-Channel Super Junction MOSFET
HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationUNISONIC TECHNOLOGIES CO., LTD UTT52N15H
UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
More informationUNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode Power FET using UTC s advanced technology to provide costumers
More informationHCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationDFP50N06. N-Channel MOSFET
N-Channel MOSFET Features R DS(on) (Max.22 )@ =1V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 1% Avalanche Tested 1.Gate 2.Drain 3.Source BS = 6V R DS(ON) =.22 ohm = 5A General
More informationHCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationI2-PAK G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 650 V. Symbol Parameter SLB10N65S SLI10N65S Units R θjc
SLB10N65S/ SLI10N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.
More informationT C =25 unless otherwise specified
800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate
More informationT C =25 unless otherwise specified
WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,
More informationUNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced
More informationTSP13N 50M / TSF13N N50M
TSP13N50M / TSF13N50M 600V N-Channel MOSFET General Description This Power MOSFET is produced using True semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More informationI2-PAK G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 260 V. Symbol Parameter SLB40N26C/SLI40N26C Units R θjc
SLB40N26C / SLI40N26C 260V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 171A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement mode power MOSFET using UTC s advanced technology to
More informationDescription TO-3PN D S. Symbol Parameter FDA18N50 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDA18N50 N-Channel UniFET TM MOSFET 500 V, 19 A, 265 m Features R DS(on) = 265 m (Max.) @ = 10 V, ID = 9.5 A Low Gate Charge (Typ. 45 nc) Low C rss (Typ. 25 pf) 100% Avalanche Tested Applications PDP TV
More informationHCD80R1K4E 800V N-Channel Super Junction MOSFET
HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More informationUNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers
More informationUNISONIC TECHNOLOGIES CO., LTD UTT100N06
UNISONIC TECHNOLOGIES CO., LTD UTT1N6 1A, 6V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT1N6 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers
More informationSMN630LD Logic Level N-Ch Power MOSFET
Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage: BV DSS =200V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On-Resistance: R DS(on) =0.34Ω
More informationUNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220 The UTC 10N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide
More informationHCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationUNISONIC TECHNOLOGIES CO., LTD
6N9 UNISONIC TECHNOLOGIES CO., LTD 6.2A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N9 is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide costumers with planar
More informationHCS70R350E 700V N-Channel Super Junction MOSFET
HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationHCD80R650E 800V N-Channel Super Junction MOSFET
HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 7A, 700V N-CHANNEL POWER MOSFET TO-220 TO-220F DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationUNISONIC TECHNOLOGIES CO., LTD UT50N04
UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More informationSMN01L20Q Logic Level N-Ch Power MOSFET
Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features 0.85A, 200V, R DS(on) =1.35Ω @ V GS =10V Low gate charge: Q g =4nC (Typ.) Fast switching 100% avalanche tested RoHS compliant device D
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
More informationUNISONIC TECHNOLOGIES CO., LTD UFC8N80K
UNISONIC TECHNOLOGIES CO., LTD UFC8N80K 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFC8N80K provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable
More informationUNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the
More informationUNISONIC TECHNOLOGIES CO., LTD UFZ24N-F
UNISONIC TECHNOLOGIES CO., LTD UFZ24N-F 17A, 55V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFZ24N-F is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with
More informationHCS80R380R 800V N-Channel Super Junction MOSFET
HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply
More informationT C =25 unless otherwise specified
800V N-Channel MOSFET BS = 800 V R DS(on) typ = 3.0 A Dec 2005 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent
More informationUNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET -80A, -60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80P06 is a P-channel power MOSFET using UTC s advanced technology to provide the
More informationUNISONIC TECHNOLOGIES CO., LTD UTT200N03
UNISONIC TECHNOLOGIES CO., LTD UTT200N03 200A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT200N03 is a N-channel MOSFET using UTC s advanced technology to provide customers with a minimum on-state
More informationUNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide
More informationUNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET -21A, -40V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized
More informationSMK0460IS Advanced N-Ch Power MOSFET
Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On resistance: R DS(on) =2.1Ω
More informationUNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ
UNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology.
More information8N Amps, 600/650 Volts N-CHANNEL POWER MOSFET 8N60 MOSFET N 600V 7.5A 1,2 OHM. Power MOSFET. DESCRIPTION FEATURES
MOSFET N 6V 7.5A,2 OHM 8N6 7.5 Amps,6/65 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N6 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
More informationSMK0990FD Advanced N-Ch Power MOSFET
z SMK0990FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =900V Low gate charge: Q g =52nC (Typ.) Low drain-source On resistance: R DS(on) =1.4Ω
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 16A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS
More informationUNISONIC TECHNOLOGIES CO., LTD 5N60
UNISONIC TECHNOLOGIES CO., LTD 5N60 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,
More informationT J =25 unless otherwise specified W W/ T J, T STG Operating and Storage Temperature Range -55 to +150
500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
More informationHCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET
HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
More information500V N-Channel MOSFET
SLD5N50S2 / SLU5N50S2 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More informationHCS90R1K5R 900V N-Channel Super Junction MOSFET
HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is a N-Channel POWER MOSFET, it uses UTC s advanced technology to provide customers with high switching speed
More informationUNISONIC TECHNOLOGIES CO., LTD UTT36N05 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT36N05 Preliminary Power MOSFET 36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using
More informationHCS80R850R 800V N-Channel Super Junction MOSFET
HCS80R850R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationSMK1360FD Advanced N-Ch Power MOSFET
Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features BV DDS =600V (Min.) Low gate charge: Q g =41nC (Typ.) Low drain-source On resistance: R DS(on) =0.65Ω (Max.) 100% avalanche tested RoHS
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC uses UTC s advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 24A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC s proprietary,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 11A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N9 is a N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with planar stripe
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 4A, 6V N-CHANNEL POWER MOSFET DESCRIPTION TO-22F TO-22F The UTC 4N6-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC s advanced technology. This technology allows a minimum on-state resistance,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationGP1M018A020CG GP1M018A020PG
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP1M18A2CG N-channel MOSFET BS R DS(on) MAX 2V 18A
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar
More informationUNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6.0A, 800V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM80 is a Super Junction MOSFET Structure and is designed to have better characteristics,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 200 V V GS Gate-Source Voltage ± 30 V
200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
More informationN-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc..
Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current
More informationUNISONIC TECHNOLOGIES CO., LTD UTT50P04
UNISONIC TECHNOLOGIES CO., LTD UTT50P04-40V, -50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
More informationFeatures. Information I-PAK G D S. Marking. Part Number. Package. I-PAK (Short Lead) SMK0160. Unit. V Gate-source voltage T c =25 C I D I DM
Features SWITCHING REGULATO OR APPLICATION Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g = 3.9nC (Typ.) Low drain-source On resistance: R DS(on) =11.5Ω (Max.) 100% avalanche
More informationMDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω
General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS
More informationMDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω
General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
More information12N60 12N65 Power MOSFET
12 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 1 TO-220 ITO-220/TO-220F is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time,
More informationGP2M020A050H GP2M020A050F
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A
More informationGeneral Description. Symbol Parameter Value Units. dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
Features NChannel MOSFET BS (Minimum) R DS(ON) (Maximum) I D Qg (Typical) P D (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 73 W General Description This power MOSFET is produced in CHMC with advanced
More informationTSF18N60MR TSF18N60MR. 600V N-Channel MOSFET. Features. Absolute Maximum Ratings. Thermal Resistance Characteristics
600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More information