AUTOMOTIVE GRADE. Outline and Substrate Outline SB SC M2 M4 L4 L6 L8
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1 UTOMOTIVE RE dvanced Process Technology Optimized for utomotive Motor rive, C-C and other Heavy Load pplications Exceptionally Small Footprint and Low Profile High Power ensity Low Parasitic Parameters ual Sided Cooling 175 C Operating Temperature Repetitive valanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free utomotive Qualified * V (BR)SS R S(on) typ. max. I (Silicon Limited) Q g (typical) UIRF7648M2TR utomotive irectfet Power MOSFET S S S S 60V 5.5m 7.0m 68 35nC pplicable irectfet Base Part Number Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Package Type Standard Pack Form Quantity irectfet ISOMETRIC escription The UIRF7648M2 combines the latest utomotive HEXFET Power MOSFET Silicon technology with the advanced irectfet packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET is designed for applications where efficiency and power density are of value. The advanced irectfet packaging platform coupled with the latest silicon technology allows the UIRF7648M2 to offer substantial system level savings and performance improvement specifically in motor drive, high frequency C-C and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. dditional features of this MOSFET are 175 C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Orderable Part Number UIRF7648M2 irectfet Medium Can Tape and Reel 4800 UIRF7648M2TR bsolute Maximum Ratings Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. mbient temperature (T) is 25 C, unless otherwise specified. Parameter Max. Units V S rain-to-source Voltage 60 V S ate-to-source Voltage ±20 V T C = 25 C Continuous rain Current, V V (Silicon Limited) 68 T C = 0 C Continuous rain Current, V V (Silicon Limited) 48 T = 25 C Continuous rain Current, V V (Silicon Limited) 14 T C = 25 C Continuous rain Current, V V (Package Limited) 179 I M Pulsed rain Current 272 C = 25 C Power issipation 63 = 25 C Power issipation 2.5 W E S Single Pulse valanche Energy (Thermally Limited) 70 E S (Tested) Single Pulse valanche Energy 291 mj I R valanche Current See Fig. 16, 17, 18a, 18b E R Repetitive valanche Energy mj T P Peak Soldering Temperature 270 T J Operating Junction and -55 to C T ST Storage Temperature Range HEXFET is a registered trademark of Infineon. *Qualification standards can be found at M4
2 UIRF7648M2TR Thermal Resistance Symbol Parameter Typ. Max. Units R J Junction-to-mbient 60 R J Junction-to-mbient 12.5 R J Junction-to-mbient 20 C/W R J-Can Junction-to-Can 2.4 R J-PCB Junction-to-PCB Mounted 1.0 Linear erating Factor 0.42 W/ C Static Electrical T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 60 V V S = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.07 V/ C Reference to 25 C, I = 1.0m R S(on) Static rain-to-source On-Resistance m V S = V, I = 41 V S(th) ate Threshold Voltage V V S = V S, I = 150µ V S(th) / T J ate Threshold Voltage Coefficient -12 mv/ C gfs Forward Transconductance 44 S V S = 25V, I = 41 R Internal ate Resistance V S = 60V, V S = 0V I SS rain-to-source Leakage Current µ 250 V S = 60V, V S = 0V, T J = 125 C I SS ate-to-source Forward Leakage 0 V S = 20V n ate-to-source Reverse Leakage -0 V S = -20V ynamic Electrical T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions Q g Total ate Charge V S = 30V Q gs1 ate-to-source Charge 7.7 V S = V Q gs2 ate-to-source Charge 3.4 I = 41 nc Q gd ate-to-rain ("Miller") Charge 14 See Fig. 11 Q godr ate Charge Overdrive 9.9 Q sw Switch Charge (Q gs2 + Q gd ) 17.4 Q oss Output Charge 23 nc V S = 16V, V S = 0V t d(on) Turn-On elay Time 12 V = 30V t r Rise Time 23 I = 41 ns t d(off) Turn-Off elay Time 19 R = 6.8 t f Fall Time 14 V S = V C iss Input Capacitance 2170 V S = 0V C oss Output Capacitance 633 V S = 25V C rss Reverse Transfer Capacitance 162 ƒ = 1.0 MHz pf C oss Output Capacitance 2661 V S = 0V, V S = 1.0V, ƒ = 1.0 MHz C oss Output Capacitance 465 V S = 0V, V S = 48V, ƒ = 1.0 MHz C oss eff. Effective Output Capacitance 726 V S = 0V, V S = 0V to 48V Notes through are on page
3 UIRF7648M2TR iode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 68 (Body iode) showing the Pulsed Source Current integral reverse I SM 272 S (Body iode) p-n junction diode. V S iode Forward Voltage 1.3 V T J = 25 C, I S = 41, V S = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 41, V = 25V Q rr Reverse Recovery Charge nc dv/dt = 0/µs Surface mounted on 1 in. square Cu board (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). Click on this section to link to the appropriate technical paper. Click on this section to link to the irectfet Website. Surface mounted on 1 in. square Cu board, steady state. T C measured with thermocouple mounted to top (rain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.084mH, R = 50, I S = 41, V S = 20V. Pulse width 400µs; duty cycle 2%. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heat sink. R is measured at T J of approximately 90 C
4 I, rain-to-source Current () R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current () I, rain-to-source Current () UIRF7648M2TR 00 0 VS TOP 15V V 9.0V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V 00 0 VS TOP 15V V 9.0V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V 1 5.5V 60µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) 5.5V 60µs PULSE WITH Tj = 175 C V S, rain-to-source Voltage (V) R S(on), rain-to -Source On Resistance (m ) Fig. 1 Typical Output Characteristics 14 I = R S (on), rain-to -Source On Resistance ( m ) Fig. 2 Typical Output Characteristics T J = 125 C 8 T J = 125 C T J = 25 C 4.0 T J = 25 C Vgs = V V S, ate -to -Source Voltage (V) I, rain Current () Fig. 3 Typical On-Resistance vs. ate Voltage Fig. 4 Typical On-Resistance vs. rain Current 00 V S = 25V 60µs PULSE WITH I = 41 V S = V T J = -40 C TJ = 25 C TJ = 175 C V S, ate-to-source Voltage (V) T J, Junction Temperature ( C) Fig 5. Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature
5 V S, ate-to-source Voltage (V) I, rain Current () fs, Forward Transconductance (S) C, Capacitance (pf) V S(th), ate threshold Voltage (V) I S, Reverse rain Current () UIRF7648M2TR T J = -40 C TJ = 25 C TJ = 175 C I = 1.0 I = 1.0m I = 250µ I = 150µ T J, Temperature ( C ) V S = 0V V S, Source-to-rain Voltage (V) Fig. 7 Typical Threshold Voltage vs. Junction Temperature T J = 25 C 80 Fig 8. Typical Source-rain iode Forward Voltage 0000 V S = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd T J = 175 C 00 C iss C oss 20 0 V S = 6V 380µs PULSE WITH C rss 1 0 I,rain-to-Source Current () V S, rain-to-source Voltage (V) Fig 9. Typical Forward Trans conductance vs. rain Current 14 I = 41 V S = 48V 12 V S = 30V VS= 12V 8 Fig. Typical Capacitance vs. rain-to-source Voltage Q, Total ate Charge (nc) T C, Case Temperature ( C) Fig 11. Typical ate Charge vs. ate-to-source Voltage Fig 12. Maximum rain Current vs. Case Temperature
6 I, rain-to-source Current () UIRF7648M2TR 00 0 OPERTION IN THIS RE LIMITE BY RS(on) E S, Single Pulse valanche Energy (mj) I TOP BOTTOM 41 1msec 0µsec 150 msec 0 1 Tc = 25 C Tj = 175 C Single Pulse C V S, rain-to-source Voltage (V) Fig 13. Maximum Safe Operating rea Starting T J, Junction Temperature ( C) Fig 14. Maximum valanche Energy vs. Temperature Thermal Response ( Z thjc ) C/W = SINLE PULSE ( THERML RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 J J Ci= i Ri Ci= i Ri R 4 Ri ( C/W) i (sec) R 4 C C Notes: 1. uty Factor = t1/t2 2. Peak Tj = P dm x Zthjc + Tc E-006 1E t 1, Rectangular Pulse uration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0 uty Cycle = Single Pulse llowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150 C and Tstart =25 C (Single Pulse) valanche Current () 1 llowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 150 C E E E E E E-01 tav (sec) Fig 16. Typical valanche Current vs. Pulse Width
7 E R, valanche Energy (mj) TOP Single Pulse BOTTOM 1.0% uty Cycle I = Starting T J, Junction Temperature ( C) Fig 17. Maximum valanche Energy vs. Temperature UIRF7648M2TR Notes on Repetitive valanche Curves, Figures 16, 17: (For further info, see N-05 at 1. valanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in valanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. P (ave) = verage power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = llowable avalanche current. 7. T = llowable rise in junction temperature, not to exceed Tjmax (assumed as 25 C in Figure 16, 17). tav = verage time in avalanche. = uty cycle in avalanche = tav f ZthJC(, tav) = Transient thermal resistance, see Figures 15) P (ave) = 1/2 ( 1.3 BV I av ) = T/ Z thjc I av = 2 T/ [1.3 BV Z th ] E S (R) = P (ave) t av Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms V Fig 19a. ate Charge Test Circuit Fig 19b. ate Charge Waveform Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms
8 irectfet Board Footprint, M4 (Medium Size Can). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. UIRF7648M2TR = TE = RIN S = SOURCE S S S S
9 UIRF7648M2TR irectfet Outline imension, M4 Outline (Medium Size Can). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. COE B C E F H J K L M P IMENSIONS METRIC IMPERIL MIN MX MIN MX L R irectfet Part Marking "U" = TE N UTOMOTIVE MRKIN LOO PRT NUMBER BTCH NUMBER TE COE Line above the last character of the date code indicates "Lead-Free"
10 UIRF7648M2TR irectfet Tape & Reel imension (Showing component orientation) LOE TPE FEE IRECTION F B H F E C B C E H NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts, ordered as UIRF7648M2TR. IMENSIONS NOTE: CONTROLLIN IMENSIONS IN MM COE B C E F H METRIC MIN MX IMPERIL MIN MX COE B C E F H REEL IMENSIONS STNR OPTION (QTY 4800) METRIC MIN MX MIN IMPERIL MX
11 UIRF7648M2TR Qualification Information utomotive (per EC-Q1) Qualification Level Comments: This part number(s) passed utomotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher utomotive level. Moisture Sensitivity Level FET2 Medium Can MSL1 Machine Model Class M4 (+/- 400V) EC-Q1-002 ES Human Body Model Class H2 (+/- 4000V) EC-Q1-001 Charged evice Model N/ EC-Q1-005 RoHS Compliant Yes Highest passing voltage. Revision History ate Updated datasheet with corporate template 9/30/2015 Corrected ordering table on page 1. Updated Tape and Reel option on page Comments Published by Infineon Technologies München, ermany Infineon Technologies 2015 ll Rights Reserved. IMPORTNT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WRNINS ue to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
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l pplication Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
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Typical R S(on) (mω), atetosource Voltage (V) l RoHs Compliant l LeadFree (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core CC Converters l Low Conduction Losses l High
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I D, Drain Current (A) IR MOSFET StrongIRFET IRF6B27 HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge
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Typical R S (on) (mω), atetosource Voltage (V) l RoHS Compliant l LeadFree (Qualified up to 26 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket
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Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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Typical R DS(on) (Ω) V GS, Gate-to-Source Voltage (V) l RoHS compliant containing no lead or bromide l Low Profile (
More informationV DSS V GS R DS(on) R DS(on) Q g tot Q gd Q gs2 Q rr Q oss V gs(th)
Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More informationEasier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen
V DS 4 V PD -9778 IRLH734PbF HEXFET Power MOSFET R DS(on) max (@V GS = V) 3.3 mω Q g (typical) 39 nc I D (@T c(bottom) = 25 C) 5 i PQFN 5X6 mm pplications Secondary Side Synchronous Rectification Inverters
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P 95823C IRF6620 l pplication Specific MOSFETs l Ideal for CPU Core CC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationI, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)
l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
l Generation V Technology l Ultra Low On-Resistance l ual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l Lead-Free escription Fifth Generation HEXFETs
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pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters P - 9737 HEXFET Power MOSFET V SS R S(on) max Qg 30V 2.8m:@V GS = V 44nC Benefits
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFET power MOSFETs
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Ease of Paralleling Lead-Free G IRFZ34NPbF HEXFET Power MOSFET S P - 94807 V SS = 55V R
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Typical R (on), (mω) pplications l RoH Compliant, Halogen Free l Lead-Free (Qualified up to 260 C Reflow) l Ideal for High Performance Isolated Converter Primary witch ocket l Optimized for ynchronous
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PD -96276 V DS 3 V R DS(on) max (@V GS = V).85 mω Q g (typical) 37 nc R G (typical).5 Ω I D (@T c(bottom) = 25 C) h IRFH53PbF HEXFET Power MOSFET PQFN 5X6 mm pplications OR-ing MOSFET for 2V (typical)
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IRFH420PbF HEXFET Power MOSFET V DSS 25 V R DS(on) max (@ V GS = 0V) 0.95 (@ V GS = 4.5V).25 m Qg (typical) 46.0 nc I D (@T C (Bottom) = 25 C) A PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for
More informationApplications DSS 150V RDS(on) typ. 12m max. 15m Benefits 85A Absolute Maximum Ratings Symbol Parameter Max. Units
P - 975C IRFS432PbF IRFSL432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
l Generation V Technology l Ultra Low On-Resistance l ual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs
More information30V GS = 10V 48nC GS = 4.5V
l Application Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (
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P- 94087 IRF724 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance P-Channel MOSFET vailable in Tape & Reel Ω) I V SS R S(on) max (mω) -40V 4@V GS = -0V -6.2 70@V GS = -4.5V -5.0 escription
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
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l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
Generation V Technology l l Ultra Low OnResistance l PChannel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching escription Fifth Generation HEXFETs from International
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
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I D, Drain Current (A) StrongIRFET IRL6B26 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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P 97729A HEXFET Power MOSFET V S 2 V V GS max ±2 V 6 A R S(on) max (@V GS = 4.5V) 32 m 2 5 R S(on) max (@V GS = 2.5V) 55 m G 3 4 S Q g typ 2 nc Top View TSOP6 I (@T A = 25 C) 6.9 A Applications l Battery
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PD 94727B l pplication Specific MOSFETs l Ideal for CPU Core DCDC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
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I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
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PD-9777C IRHLNA7764 2N764U2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) 6V, N-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNA7764 krads(si).2
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Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
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I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
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I D, Drain Current (A) StrongIRFET IRFB774PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
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Target Applications Wireless charging Adapter Telecom Benefits Higher power density designs Higher switching frequency IR MOSFET - Uses OptiMOS TM 5 Chip Reduced parts count wherever 5V supplies are available
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PD-97574A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 6V, DUAL P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).6 -.65A IRHLUC793Z4 3 krads(si).6
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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PD-97174B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE-MOUNT (SMD-2) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).17-56a* IRHLNA79364 3 krads(si).17-56a*
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P-900 IRF7809V N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications % Tested for R
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