IPS009 series IC CMOS SPXO
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- Bertha Chandler
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1 IPS009 series IC Description IPS009 is the IC for SPXO corresponding to the fundamental crystal from 14MHZ to 100MHz, and operation voltage is 1.2V minimum, so it is the best for the application to the hand-held apparatus of a battery drive. The operation temperature is quite high (125 ), so IPS009 can be used for various applications. Features Operation temperature : 125 Power supply voltage : 1.2~3.63V / IPS009BL and 1.62~3.63V / IPS009CM Standby function : Oscillation stop Crystal frequency : 100MHz maximum Low power consumption : 1.2mA (IPS009BL) Output : CMOS Divide function : 1/2, 1/4 and 1/8 Small chip size : 0.70mm 0.75mm Frequency stability to Vdd : Within ±1ppm Duty cycle : Within 50±5% 1. Part number rule IPS 009 B L z -C1 Series Name for SPXO Product Series Frequency Range Conbination of Frequency and Frequency Range B:14~48MHz C:48~100MHz Divide Function (V) L M 0:1/1 1.2~ ~3.63 1:1/2 Divide NA 2:1/4 Divide NA 3:1/8 Divide Pad Layout C1:Straight C2:Cross S1-1/7 S1.103
2 2. Series Output Frequency (MHz) Part Number Divide Min. Max. IPS009 B L 0 -C /1 IPS009 B L 1 -C /2 IPS009 B L 2 -C /4 IPS009 B L 3 -C /8 Pad Layout Straight Vdd (V) 1.2 *1) ~ 3.63 IPS009 series IC Remarks Low Vdd *1) 1.3V at 125 IPS009 B L 0 -C /1 Cross IPS009 C M 0 -C /1 IPS009 C M 1 -C /2 IPS009 C M 2 -C /4 Straight 1.62~3.63 High Frequency IPS009 C M 3 -C /8 3. Absolute Maximum Ratings Vss=0V, Ta=25 ±2 Parameter Symbol Condition Ratings Min Max Unit Supply Voltage VSS V Input Voltage VIN All Input Pin VSS V Output Voltage V VSS V Input Current IIN Pin 50 μa Output Current I 25 ma Junction Temperature Tj Storage Temperature Tstg Recommended Operating Condition VSS=0V, Ta=- 40 ~+125 Parameter Symbol Condition Min Typ Max Unit Note -40~ V IPS009BL Supply -40~ Voltage V IPS009CM -40~ V H Input Voltage VIH 0.8 V L Input Voltage VIL 0.2 V Input Voltage VIN VSS V Output Load CL CMOS 15 pf Capacitance Ambient Temperature Topt This IC has enough immunity against ESD and Latch-up, but handle with care. S1-2/7 S1.103
3 IPS009 series IC 5. Electrical Specification 5-1 IPS009BL Unless otherwise stated, =1.2V~3.63V, VSS=0V, Ta=-40~125, fxtal=14~48mhz Specification Parameter Symbol Condition Min Typ Max 125 Unit Out put Leak current Iz =0V, X1=, Vss, Vout=Vss~ μa H input current IIH pad, VIN= μa L input current IIL pad, VIN=VSS μa Oscillation Disable Time Tplz pad 0.1 μs Oscillation Enable Time Tpzl pad 2 ms Oscillation start up time Tstart fxtal=27mhz, 1.2V 2 ms H output voltage VOH pad, IOH=-1.0mA 0.9 V L output voltage VOL pad, IOL=1.0mA 0.1 V Current consumption Current consumption at oscillation disable Frequency deviation Output Duty Ratio Rise time Fall time IDD IDDD Fvst Duty Tr Tf CL=0pF, =1.8V, =Open, F0=27MHz CL=15pF, =1.8V, =Open, F0=27MHz CL=15pF, =3.3V, =Low ma μa =3.0±10% ±1 =1.8±10% ±2 CL=15pF, =1.2~1.62V CL=15pF, =1.62~3.63V =2.52~3.63V =1.2~2.52V =2.52~3.63V =1.2~2.52V ppm % ns ns S1-3/7 S1.103
4 IPS009 series IC 5-2 IPS009CM Unless otherwise stated, =1.62V~3.63V, VSS=0V, Ta=-40~125, fxtal=48~100mhz Specification Parameter Symbol Condition Unit Min Typ Max 125 =0V, X1=, Vss, Out put Leak current Iz μa Vout=Vss~ H input current IIH pad, VIN= μa L input current IIL pad, VIN=VSS μa Oscillation Disable Time Tplz pad 0.1 μs Oscillation Enable Time Tpzl pad 2 ms Oscillation start up time Tstart fxtal=27mhz, 1.62V 2 ms H output voltage VOH pad, IOH=-1.0mA 0.9 V L output voltage VOL pad, IOL=1.0mA 0.1 V Current consumption Current consumption at oscillation disable Frequency deviation Output Duty Ratio Rise time Fall time IDD IDDD Fvst Duty Tr Tf CL=0pF, =1.8V, =Open, F0=77MHz CL=15pF, =1.8V, =Open, F0=77MHz CL=15pF, =3.3V, =Low ma μa =3.0±10% ±1 =1.8±10% ±2 CL=15pF, =1.62~3.63V =2.52~3.63V =1.62~2.52V =2.52~3.63V =1.62~2.52V ppm % ns ns S1-4/7 S1.103
5 IPS009 series IC T WH T WL V DD 0.9 V OH V DD 0.5 V DD 0.1 V OL Tr Tf Duty= T WH T WH +T WL 100% Fig. 5-1 Output wave form (Duty, Tr, Tf, VOH, VOL) ST VIH VIL Tplz Tpzl 1.2V GND Tstart Oscillation Out High-Z Oscillation Out Fig. 5-2 Input output signal timing S1-5/7 S1.103
6 IPS009 series IC 6. Circuit Parameters of Oscillator (Reference Data for Circuit Design) 6-1 IPS009BL Ta=25 Parameter Symbol Condition Min Typ Max Unit Equivalent series (Loading) =2.7V, CLxtal 4.5 pf Capacitance fxtal=27mhz =3.3V, Ta=25 Drive Level DL 20 μw fxtal=27mhz *The above values are the design values and are not guaranteed by test. 6-2 IPS009CM Ta=25 Parameter Symbol Condition Min Typ Max Unit Equivalent series (Loading) =2.7V, CLxtal 7.3 pf Capacitance fxtal=100mhz =3.3V, Ta=25 Drive Level DL 150 μw fxtal=70mhz *The above values are the design values and are not guaranteed by test. R f Voltage Regulator Vreg Level Shifter Divider 3stage Output Buffer R d X1 X2 Cg Cd Rst Fig. 6-1 Block Diagram S1-6/7 S1.103
7 IPS009 series IC 7. Pad Layout 0.7mm Die Size:0.75mm 0.7mm Pad Size:80um X1 y x 0.75mm Thickness:150±20um IC Backside:Gnd or Open X2 Pad Name Function Location (μm) x y VSS (+)Power Supply (Q) Frequency Output VSS (-)Ground Oscillation stop, "L": High-Impedance Scribe line center X2 Crystal Drive X1 Crystal Feedback Center 0 0 Fig. 7-1 Pad Layout of IPS009BLx-C1 and IPS009CMx-C1 ( Straight Type ) 0.7mm X1 X2 y x VSS Scribe line center 0.75mm Die Size:0.70mm 0.75mm Pad Size:80um Thickness:150±20um IC Backside:Gnd or Open Pad Name Function Location (μm) x y (+)Power Supply (Q) Frequency Output VSS (-)Ground X2 Crystal Drive X1 Crystal Feedback Oscillation stop, "L": High-Impedance Chip Center 0 0 Fig. 7-2 Pad Layout of IPS009BL0-C2 (Cross Type ) S1-7/7 S1.103
8 Low Phase Noise IPS009BM Wide Vdd Description IPS009BM is the specific SPXO IC for achieving low Phase Noise, corresponding to the fundamental crystal from 14MHZ to 60MHz. Both the operation temperature (-40 ~125 ) and Vdd range(1.62v~5.5v) is wide, so IPS009BM makes the selection of application wider. If slightly poor phase noise performance is allowed, even 1.8V is applicable. Features Phase Noise : -162dBc/Floor 27MHz Phase Jitter : 150fsec/27MHz Operation temperature : -40 ~125 Power supply voltage : 1.62 *1) ~2.25~5.5V Standby function : Oscillation stop Crystal frequency : 60MHz maximum Output : CMOS Divide function : 1/2, 1/4 and 1/8 Small chip size : 0.70mm 0.75mm Frequency stability to Vdd : Within ±1ppm Duty cycle : Within 50±5% *1) Phase noise performance becomes slightly poor under 1.8V operation. 1. Part number rule IPS 009 B M z -C2 Series Name for SPXO Product Series Frequency Range 1.75~60MHz 1.62~5.5V Pad Layou C2:Cross Divide Function 0:1/1 1:1/2 Divide 2:1/4 Divide 3:1/8 Divide S11-1/6 S11.102
9 2. Series Part Number Output Frequency (MHz) Min. Max. Divide IPS009 B M 0 -C /1 IPS009 B M 1 -C /2 IPS009 B M 2 -C /4 IPS009 B M 3 -C /8 3. Absolute Maximum Ratings Vss=0V, Ta=25 ±2 Parameter Symbol Condition Low Phase Noise IPS009BM Wide Vdd Pad Layout Cross Vdd (V) 1.62 ~5.5 Ratings Remarks Low Phase Noise Wide Vdd Min Max Unit Supply Voltage VSS V Input Voltage VIN All Input Pin VSS V Output Voltage V VSS V Input Current IIN Pin 50 μa Output Current I 25 ma Junction Temperature Tj Storage Temperature Tstg Recommended Operating Condition VSS=0V, Ta=- 40 ~+125 Supply Voltage Parameter Symbol Condition Min Typ Max Unit Note IPS009BM -40~ *1) V H Input Voltage VIH 0.8 V L Input Voltage VIL 0.2 V Input Voltage VIN VSS V Output Load CL CMOS 15 pf Capacitance Ambient Temperature Topt *1) Phase noise performance becomes slightly poor under 1.62~2.25V. This IC has enough immunity against ESD and Latch-up, but handle with care. S11-2/6 S11.102
10 Low Phase Noise IPS009BM Wide Vdd 5. Electrical Specification Unless otherwise stated, =1.62V~5.5V, VSS=0V, Ta=-40~125, fxtal=14~60mhz Specification Parameter Symbol Condition Min Typ Max 125 Unit Out put Leak current Iz =0V, X1=, Vss, Vout=Vss~ μa H input current IIH pad, VIN= μa L input current IIL pad, VIN=VSS μa Oscillation Disable Time Tplz pad 0.1 μs Oscillation Enable Time Tpzl pad 2 ms Oscillation start up time Tstart fxtal=27mhz 2 ms H output voltage VOH pad, IOH=-1.0mA 0.9 V L output voltage VOL pad, IOL=1.0mA 0.1 V Current consumption Current consumption at oscillation disable IDD IDDD CL=15pF, =1.8V, =Open, F0=27MHz CL=0pF, =3.3V, =Open, F0=27MHz CL=15pF, =3.3V, =Open, F0=27MHz CL=15pF, =3.3V, =Low ma μa =5±10% ±1 Frequency deviation Fvst =3.3±10% ±1 =2.5±10% ±1 Output Duty Ratio Duty CL=15pF Rise/Fall time Rise/Fall time Tr/Tf Tr/Tf =1.62~2.52V =2.52~3.63V ppm ns ns Phase Noise : Frequency =27MHz, V DD = 3.3V Phase Jitter : 143fsec Typ. Offset Phase Noise (dbc) 1Hz Hz Hz KHZ KHz KHz MHz -162 S11-3/6 S11.102
11 Low Phase Noise IPS009BM Wide Vdd T WH T WL V DD 0.9 V OH V DD 0.5 V DD 0.1 V OL Tr Tf Duty= T WH T WH +T WL 100% Fig. 5-1 Output wave form (Duty, Tr, Tf, VOH, VOL) VIH VIL Tplz Tpzl 1.2V GND Tstart Oscillation Out High-Z Oscillation Out Fig. 5-2 Input output signal timing S11-4/6 S11.102
12 Low Phase Noise IPS009BM Wide Vdd 6. Circuit Parameters of Oscillator (Reference Data for Circuit Design) Ta=25 Parameter Symbol Condition Min Typ Max Unit Equivalent series (Loading) =2.7V, CLxtal Capacitance fxtal=27mhz 6 pf Drive Level DL =3.3V, Ta=25 fxtal=27mhz 60 μw *The above values are the design values and are not guaranteed by test. R f Voltage Regulator Vreg Level Shifter Divider 3stage Output Buffer R d X1 X2 Cg Cd Rst Fig. 6 Block Diagram S11-5/6 S11.102
13 Low Phase Noise IPS009BM Wide Vdd 7. Pad Layout 0.7mm X1 X2 y x VSS 0.75mm Die Size:0.70mm 0.75mm Pad Size:80um Thickness:150±20um IC Backside:Gnd or Open Pad Name Function Location (μm) x y (+)Power Supply (Q) Frequency Output VSS (-)Ground X2 Crystal Drive X1 Crystal Feedback Oscillation stop, "L": High-Impedance Chip Center 0 0 Scribe line center Fig. 7 Pad Layout of IPS009BM (Cross Type ) S11-6/6 S11.102
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SRM2B256SLMX55/70/10
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CLEARCLOCK POWER OPTIMIZED 0.12ps 5x7mm XO
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Low Phase Noise, LVPECL VCXO (for 150MHz to 160MHz Fundamental Crystals) FEATURES. * Internal 60KΩ pull-up resistor
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12-27 MHz XO IC with 1 Pair of LVDS and 1 CMOS Outputs
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EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.
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SC8560S. Silan Semiconductors DIGITAL ALARM CLOCK HANGZHOU SILAN MICROELECTRONICS CO.,LTD. DESCRIPTION FEATURES ORDERING INFORMATION
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Features 32.768 khz ±5, ±10, ±20 ppm frequency stability options over temp World s smallest TCXO in a 1.5 x 0.8 mm CSP Operating temperature ranges: 0 C to +70 C -40 C to +85 C Ultra-low power:
Product Data Sheet XO5029 series KHz Crystal Oscillorator IC. Features. Application. Ordering Information. Description.
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FAST CMOS 16-BIT BIDIRECTIONAL 3.3V TO 5V TRANSLATOR
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CDC MHz CLOCK SYNTHESIZER/DRIVER FOR PC MOTHERBOARDS WITH 3-STATE OUTPUTS
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ULTRA-LOW POWER OSCILLATOR 1-26MHz
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FAST CMOS 16-BIT BUFFER/LINE DRIVER IDT54/74FCT162244T/AT/CT/ET FEATURES: 0.5 MICRON CMOS Technology High-speed, low-power CMOS replacement for ABT functions Typical tsk(o) (Output Skew) < 250ps Low input
WS2812B-Mini Intelligent external control LED Integrated light source
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