Product Data Sheet XO5629 series Ultra-low Power KHz Crystal Oscillator IC. Features. Application. Ordering Information.
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1 Features Wide range of operating supply voltage: 1.6V to 5.5V Low crystal drive current oscillation for miniature crystal units Ulta-Low power consumption(25ua/1.8v ) XO5629A/B series: for Wire Bonding -40 to 85 operating temperature range Crystal frequency M(XO5629A/512) Crystal frequency M(XO5629B/1024) Output Freq: Crystal Freq divided by 512/1024 Very low standby current 50±2% output duty cycle 15pF output drive capability Die form or Wafer form Description The XO5629 series are miniature crystal oscillator module ICs. The oscillator circuit stage has constant current drive, significantly reducing current consumption and crystal current, compared with existing devices, and significantly reducing the oscillator characteristics supply voltage dependency. Application KHz Crystal Oscillator 7050, 5032, 3225, 2520, 2016 crystal oscillator Ordering Information Part no. Package type XO5629x-zWF Wafer form XO5629x-zDE Die form Note: 1.x: A stand for /512, B stand for /1024 Note: 2. z: -2(220um) or -3(130um), -4(100um),-5(150um) Block Diagram VDD GND INH N CC R F XT divider CMOS Q R D C G C G XTN DS RayStar Microelectronics Technology Inc.
2 Function Description Standby Function When INHN goes LOW, the oscillator stops and the output on Q becomes high impedance. INHN Q Oscillator HIGH (or open) fo output frequency Normal operation Low High impedance Stopped Power-saving Pull-up Resistor The INHN pin pull-up resistance RUP1 or RUP2 changes in response to the input level(high or LOW). When INHN is tied LOW level, the pull-up resistance is large(rup1),reducing the current consumed by the resistance. When INHN is left open circuit, the pull-up resistance is small(rup2),which increases the input susceptibility to external noise. However, the pull-up resistance ties the INHN pin HIGH level to prevent external noise from unexpectedly stopping the output. DS RayStar Microelectronics Technology Inc.
3 Pad Configuration Sensor 1 VDD Q 6 2 INHN GND 5 XT XTN 3 4 (0,0) XO5629A/B Pad Coordinate File Pad Name X Coordinate Y Coordinate Pad Name X Coordinate Y Coordinate sensor Note: Substrate is connected to GND or floating. Die Size: 760 m*700 m (Including scribe line size 80 m*80 m.) Die Thickness: 130 m 15 m(-3) or 220um 20um(-2), 100um 15um(-4), 150um+/-15um(-5) Pad Size: 90 m*90 m Substrate Level: GND or Floating Pad Description Sym. Type Description XTN O Amplifier output. XT I Amplifier input. Crystal oscillator connected between XT and XTN INHN I Output state control input. Output High when LOW. Power-saving pull-up resistor built in. V DD P Supply voltage GND P Ground Q O Output. Output frequency determined by fundamental crystal(f0 divided by 512) DS RayStar Microelectronics Technology Inc.
4 Maximum Ratings Storage Temperature o C to +150 o C Supply Voltage to Ground Potential (V DD to GND) V to +6.5V DC Input (All Other Inputs except V DD & GND) V to V DD +0.5V DC Output V to V DD +0.5V DC Output Current (all outputs)... 20mA Recommended Operating Conditions (GND=0V, unless otherwise noted.) Sym. Parameter Conditions Min Typ Max Unit V DD Supply voltage V T A Operating temperature C f 0 Oscillation frequency * (XO5629A) (XO5629B) - MHz DS RayStar Microelectronics Technology Inc.
5 DC Electrical Characteristics XO5629(V DD = 1.50 to 5.5V, T A = -40 to 85 C, unless otherwise noted.) Parameter Sym Conditions Min Typ Max Unit HIGH-level output voltage V OH I OH =1mA V DD LOW-level output voltage V OL I OL =1mA V HIGH-level input voltage V IH OE Measurement 0.7Vcc - - LOW-level input voltage V IL OE Measurement V Operating current I CC Vdd=1.8V(XO5629A)/ ua Operating Current I cc Vdd=3.0V(XO5629A)/ ua Operating Current Icc Vdd=1.8V(XO5629B)/ ua Operating Current Icc Vdd=3.0V(XO5629B)/ ua Standby Current Isb OE=off 10 ua OE pull-up resistance - - R PULL V DD = 3.3V MΩ Output leakage current I Z OE=OFF V O =V DD µa AC Characteristics XO5629C/B, T A =-40 to 85 unless otherwise noted Parameter Symbol Condition Min Typ Max Unit Output Disable Delay t OD Output Disable Function (OE) ns Output Enable Delay t STR Output Enable Function (OE) ms Output rise time t r1 C L =15Pf, 0.1V DD to 0.9V DD V DD =3.3V ns Output fall time t f1 C L =15Pf, 0.1V DD to 0.9V DD V DD =3.3V ns Output duty cycle Duty T A =25, C L =15pF % V DD Sensitivity Frequency vs. VDD+/- 10% -2 2 ppm Frequency vs. V DD +/-10% ppm OSC frequency range f R Fundamental Crystal Crystal Specifications Parameters Sym Conditions Min Typ Max Units Fundamental Crystal Resonator Frequency(XO5629A) F XIN MHz Fundamental Crystal Resonator Frequency(XO5629B) F MHz Maximum Sustainable Drive Level μw Operating Drive Level μw Crystal Shunt capacitance C O pf Effective Series Resistance, Fundamental, 10-50MHz ESR Ω XIN - MHz DS RayStar Microelectronics Technology Inc.
6 AC Electrical Characteristics Output switching waveform 0.9V DD T W 0.5V DD 0.1V DD T t f t r DUTY=TW/T 100(%) Output disable and oscillation start timing chart INHN V IL V IH t OD t STR Q output 0.1V Normal operation Output stopped Hi-Z* Normal operation When INHN goes HIGH to LOW, the Q output goes HIGH once and then becomes high impedance. When INHN goes LOW to HIGH, the Q output from high impedance to normal output operation when the oscillation starts (oscillation is detected) *: the high impedance interval in the figure is shown as a LOW level due to the 1KΩ pull-down resistor connected to the Q pin(see Measurement circuit 2 in the Measurement circuits section) DS1208 RayStar Microelectronics Technology Inc. 6
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P4C164LL. VERY LOW POWER 8Kx8 STATIC CMOS RAM FEATURES DESCRIPTION V CC. Current (Commercial/Industrial) Operating: 55 ma CMOS Standby: 3 µa
P4C164LL VERY LOW POWER 8Kx8 STATIC CMOS RAM FEATURES Current (Commercial/Industrial) Operating: 55 ma CMOS Standby: 3 µa Access Times 80/100 (Commercial or Industrial) 90/120 (Military) Single 5 Volts
Dynamic Engineers Inc.
Features and Benefits Standard and custom frequencies up to 2100 MHz Femto-second (f sec.) RMS phase jitter Short lead time Typical Applications Low noise synthesizer VCO reference Optical Communication
IS62WV10248EALL/BLL IS65WV10248EALL/BLL. 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES High-speed access time: 45ns, 55ns CMOS low power operation 36 mw (typical) operating TTL compatible interface levels Single power supply
J-Type Voltage Controlled Crystal Oscillator
J-Type Voltage Controlled Crystal Oscillator Product is compliant to RoHS directive and fully compatible with lead free assembly Features Output Frequencies from 1.024 MHz to 170.000 MHz +3.3 or +5.0 volt
ICS660 DIGITAL VIDEO CLOCK SOURCE. Description. Features. Block Diagram DATASHEET
DATASHEET ICS660 Description The ICS660 provides clock generation and conversion for clock rates commonly needed in digital video equipment, including rates for MPEG, NTSC, PAL, and HDTV. The ICS660 uses
Wave Form: Square x 20.2 x 5.88H [0.504 x x 0.231] G8 500 khz ~ 170 MHz 4 pin DIL half size
![Wave Form: Square x 20.2 x 5.88H [0.504 x x 0.231] G8 500 khz ~ 170 MHz 4 pin DIL half size](/thumbs/91/106537005.jpg "Wave Form: Square x 20.2 x 5.88H [0.504 x x 0.231] G8 500 khz ~ 170 MHz 4 pin DIL half size")
V C X O G series What is a VCXO? Logic: TTL / CMOS Wave Form: Square MERCURY Since 1973 Unlike regular clock oscillator which has fixed output frequency, the output frequency of a VCXO (also known as frequency
FSTD Bit Bus Switch with Level Shifting
FSTD16861 20-Bit Bus Switch with Level Shifting General Description The Fairchild Switch FSTD16861 provides 20-bits of highspeed CMOS TTL-compatible bus switching. The low On Resistance of the switch allows
MK2703 PLL AUDIO CLOCK SYNTHESIZER. Description. Features. Block Diagram DATASHEET
DATASHEET MK2703 Description The MK2703 is a low-cost, low-jitter, high-performance PLL clock synthesizer designed to replace oscillators and PLL circuits in set-top box and multimedia systems. Using IDT
SM8578BV Real-time Clock IC
Real-time Clock IC OVERVIEW The SM8578BV is a serial interface, real-time clock IC that uses a 32.768kHz crystal oscillator for its reference timing. It comprises second-counter to year-counter clock and
Phase Detector. Charge Pump. F out = F VCO / (4*P)
PL611-30 FEATURES Advanced programmable PLL design Very low Jitter and Phase Noise (< 40ps Pk -Pk typ.) Supports complementary LVCMOS outputs to drive LVPECL and LVDS i nputs. Output Frequencies: o < 400MHz
PI6LC4830. HiFlex TM Network Clock Generator. Features. Description. Pin Configuration. Block Diagram
IN_SEL PI6LC4830 Features ÎÎ3.3V supply voltage ÎÎ3 HCSL and 1 LVCMOS 100MHz outputs with OE/ function ÎÎ1 LVCMOS 100/50MHz selectable ÎÎ25MHz crystal or differential input ÎÎLow 1ps RMS max integrated
PCS3P73U00/D. USB 2.0 Peak EMI reduction IC. General Features. Application. Product Description. Block Diagram
USB 2.0 Peak EMI reduction IC General Features 1x Peak EMI Reduction IC Input frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Output frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Supply Voltage:
Features. Micrel Inc Fortune Drive San Jose, CA USA tel +1 (408) fax + 1 (408)
Low Power, 1.62V to 3.63V, 10MHz to 40MHz, 1:2 Oscillator Fanout Buffer Revision 2.0 General Description The is an advanced oscillator fanout buffer design for high performance, low-power, small form-factor
HD61103A. (Dot Matrix Liquid Crystal Graphic Display 64-Channel Common Driver) Features. Description. Ordering Information
(Dot Matrix Liquid Crystal Graphic Display 64-Channel Common Driver) Description The is a common signal driver for dot matrix liquid crystal graphic display systems. It generates the timing signals (switch