NTE980 Integrated Circuit CMOS, Micropower Phase Locked Loop (PLL)
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- Ethan O’Neal’
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1 NTE980 Integrated Circuit CMOS, Micropower Phase Locked Loop (PLL) Description: The NTE980 CMOS Micropower Phase Locked Loop (PLL) consists of a low power, linear voltage controlled oscillator (VCO) and two different phase comparators having a common signal input amplifier and a common comparator input in a 16 Lead type package. A 5.2V zener diode is provided for supply regulation if necessary. Features: Very Low Power Consumption: 70µW VCO f o = 10kHz, V DD = 5V Operating Frequency Range up to 1.4MHz V DD = 10V, RI = 5kΩ Low Frequency Drift: 0.04%/ C V DD = 10V Choice of Two Phase Comparators: Exclusive OR Network (I) Edge Controlled Memory Network w /Phase Pulse Output for Lock Indication (II) High VCO Linearity: < 1% V DD = 10V VCO Inhibit Control for ON OFF Keying and Ultra Low Standby Power Consumption Source Follower Output of VCO Control Input (Demod. Output) Zener Diode to Assist Supply Regulation Standardized, Symmetrical Output Characteristics 100% Tested for Quiescent Current at 20V 5V, 10V, and 15V Parametric Ratings Applications: FM Demodulator and Modulator Frequency Synthesis and Multiplication Frequency Discriminator Signal Conditioning FSK Modems Data Synchronization Voltage to Frequency Conversion Tone Decoding Absolute Maximum Ratings: DC Supply Voltage Range (Voltages referenced to V SS terminal), V DD to +20V Input Voltage Range, All Inputs to V DD +0.5V DC Input Current, Any One Input ±10mA Power Dissipation (T A = 40 to +60 C), P D mW T A = +60 to +85 C Derate Linearly at 12mW/ C to 200mW Device Dissipation Per Output Transistor (T A = 40 to +85 C) mW Operating Temperature Range, T A to +85 C Storage Temperature Range, T stg to +150 C Lead Temperature (During Soldering, 1/16 ±1/32 from case, 10sec Max), T L C
2 Recommended Operating Conditions: (T A = 40 to +85 C) Parameter Min Typ Max Unit Supply Voltage Range VCO Section: As Fixed Oscillator 3 18 V Phase Lock Loop Operation 5 18 V Supply Voltage Range Phase Comparator Section: Comparators 3 18 V VCO Operation 5 18 V Static Electrical Characteristics: (T A = +25 C unless otherwise specified) Parameter Symbol V O V IN V DD Min Typ Max Unit VCO Section Output Low (Sink) Current I OL Min 400mV 0V, 5V 5V ma 500mV 0V, 10V 10V ma 1.5V 0V, 15V 15V ma Output High (Source) Current I OH Min 4.6V 0V, 5V 5V ma 2.5V 0V, 5V 5V ma 9.5V 0V, 10V 10V ma 13.5V 0V, 15V 15V ma Output Voltage: Low Level V OL Max Pin4 0V, 5V 5V V driving CMOS 0V, 10V 10V V 0V, 15V 15V V Output Voltage: High Level V OH Max e.g. 0V, 5V 5V V Pin3 0V, 10V 10V V 0V, 15V 15V V Input Current I IN Max 0V, 18V 18V ±10 5 ±0.1 µa Phase Comparator Section Total Device Current I DD Max 0V, 5V 5V ma Pin14 = Open, Pin5 = V DD 0V, 10V 10V ma 0V, 15V 15V ma 0V, 20V 20V ma Pin14 = V SS or V DD, Pin5 = V DD 0V, 5V 5V µa 0V, 10V 10V µa 0V, 15V 15V µa 0V, 20V 20V µa Output Low (Sink) Current I OL Min 400mV 0V, 5V 5V ma 500mV 0V, 10V 10V ma 1.5V 0V, 15V 15V ma Output High (Source) Current I OH Min 4.6V 0V, 5V 5V ma 2.5V 0V, 5V 5V ma 9.5V 0V, 10V 10V ma 13.5V 0V, 15V 15V ma
3 Static Electrical Characteristics (Cont d): (T A = +25 C unless otherwise specified) Parameter Symbol V O V IN V DD Min Typ Max Unit Phase Comparator Section (Cont d) DC Coupled Signal Input and V IL Max 0.5V, 4.5V 5V 1.5 V Comparator Input Voltage Sensitivity Low Level 1V, 9V 10V 3.0 V 1.5V, 13.5V 15V 4.0 V High Level V IH Max 0.5V, 4.5V 5V 3.5 V 1V, 9V 10V 7.0 V 1.5V, 13.5V 15V 11.0 V Input Current (Except Pin14) I IN Max 0V, 18V 18V ±10 5 ±0.1 µa 3 State Leakage Current I OUT Max 0V, 18V 0V, 18V 18V ±10 5 ±0.1 µa Electrical Characteristics: (T A = +25 C) Parameter Symbol V DD Min Typ Max Unit VCO Section Operating Power P D f o = 10kHz, R 1 = 1MΩ, 5V µw Dissipation R 2 = V DD 10V µw VCO IN = 2 15V µw Maximum Operating f max C 1 = 50pF, R 1 = 10kΩ 5V MHz Frequency R 2 =, VCO IN = V DD 10V MHz 15V MHz R 1 = 5kΩ 5V MHz 10V MHz 15V MHz Linearity VCO IN = 2.5V±0.3V R 1 = 10kΩ 5V 1.7 % VCO IN = 5.0V±1.0V R 1 = 100kΩ 10V 0.5 % VCO IN = 5.0V±2.5V R 1 = 400kΩ 10V 4.0 % VCO IN = 7.5V±0.3V R 1 = 100kΩ 15V 0.5 % VCO IN = 7.5V±5.0V R 1 = 1MΩ 15V 7.0 % Temperature Frequency f MIN = 0 5V ±0.12 %/ C Stability: No Frequency Offset 10V ±0.04 %/ C 15V ±0.015 %/ C Frequency Offset f MIN 0 5V ±0.09 %/ C 10V ±0.07 %/ C 15V ±0.03 %/ C Output Duty Cycle 5, 10, 15V 50 % Output Transition Times t THL, t TLH 5V ns 10V ns 15V ns
4 Electrical Characteristics (Cont d): (T A = +25 C) Parameter Symbol V DD Min Typ Max Unit VCO Section (Cont d) Source Follower Output VCO IN V DEM RS > 10kΩ 5V V (Demodulated Output): Offset Voltage 10V V 15V V Linearity VCO IN = 2.5V±0.3V R S = 100kΩ 5V 0.3 % VCO IN = 5.0V±2.5V R S = 300kΩ 10V 0.7 % VCO IN = 7.5V±5.0V R S = 500kΩ 15V 0.9 % Zener Diode Voltage V Z I Z = 50µA V Zener Dynamic Resistance R Z I Z = 1mA 40 Ω Phase Comparator Section Pin14 (Signal In) Input R 14 5V MΩ Resistance 10V MΩ 15V MΩ AC Coupled Signal Input f IN = 100kHz, Sine Wave, Note 1 5V mv Voltage Sensitivity (Peak to Peak) 10V mv 15V mv Propagation Delay Time t PHL 5V ns (Pin14 to Pin13) High to Low Level 10V ns 15V ns Low to High Level t PLH 5V ns 10V ns 15V ns 3 State Propagation Delay t PHZ 5V ns Time (Pin14 to Pin13) High Level to 10V ns Low Impedance 15V ns Low Level to t PLZ 5V ns High Impedance 10V ns 15V ns Input Rise or Fall Times t r, t f 5V 50.0 µs Comparator Input (Pin3) 10V 1.0 µs 15V 0.3 µs Signal Input (Pin14) 5V µs 10V 20.0 µs 15V 2.5 µs Output Transition Times t THL, t TLH 5V ns 10V ns 15V ns Note 1. For sine wave, the frequency must be greater than 10kHz for Phase Comparator II.
5 Pin Connection Diagram Phase Pulses 1 Phase Comp 1 Out 2 Comparator Input 3 VCO Output 4 Inhibit V DD Zener Signal Input Phase Comp 2 Out R2 to V SS C1 (1) 6 11 R1 to V SS C1 (2) 7 10 Demodulator Output V SS 8 9 VCO Input (6.6) Max (19.9) Max.300 (7.62).200 (5.08) Max.245 (6.22) Min.100 (2.54).700 (17.7)
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