M74HC10TTR TRIPLE 3-INPUT NAND GATE

Transcription

1 TRIPLE 3-INPUT NAND GATE HIGH SPEED: t PD = 8ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: I OH = I OL = 4mA (MIN) BALANCED PROPAGATION DELAYS: t PLH t PHL WIDE OPERATING VOLTAGE RANGE: V CC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 10 DESCRIPTION The M74HC10 is an high speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with silicon gate C 2 MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. DIP ORDER CODES SOP TSSOP PACKAGE TUBE T & R DIP M74HC10B1R SOP M74HC10M1R M74HC10RM13TR TSSOP M74HC10TTR All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS July /8

2 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1, 3, 9 1A to 3A Data Inputs 2, 4, 10 1B to 3B Data Inputs 13, 5, 11 1C to 3C Data Inputs 12, 6, 8 1Y to 3Y Data Outputs 7 GND Ground (0V) 14 V CC Positive Supply Voltage TRUTH TABLE A B C Y L X X H X L X H X X L H H H H L X : Don t Care ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CC Supply Voltage -0.5 to +7 V V I DC Input Voltage -0.5 to V CC V V O DC Output Voltage -0.5 to V CC V I IK DC Input Diode Current ± 20 ma I OK DC Output Diode Current ± 20 ma I O DC Output Current ± 25 ma I CC or I GND DC V CC or Ground Current ± 50 ma P D Power Dissipation 500(*) mw T stg Storage Temperature -65 to +150 C T L Lead Temperature (10 sec) 300 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 C; derate to 300mW by 10mW/ C from 65 C to 85 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit V CC Supply Voltage 2 to 6 V V I Input Voltage 0 to V CC V V O Output Voltage 0 to V CC V T op Operating Temperature -55 to 125 C t r, t f V CC = 4.5V 0 to 500 ns Input Rise and Fall Time V CC = 2.0V 0 to 1000 ns V CC = 6.0V 0 to 400 ns 2/8

3 DC SPECIFICATIONS Test Condition Value Symbol V IH V IL V OH V OL I I I CC Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current V CC (V) T A = 25 C -40 to 85 C -55 to 125 C Min. Typ. Max. Min. Max. Min. Max I O =-20 µa I O =-20 µa I O =-20 µa I O =-4.0 ma I O =-5.2 ma I O =20 µa I O =20 µa I O =20 µa I O =4.0 ma I O =5.2 ma V I = V CC or GND ± 0.1 ± 1 ± 1 µa 6.0 V I = V CC or GND µa Unit V V V V AC ELECTRICAL CHARACTERISTICS (C L = 50 pf, Input t r = t f = 6ns) Test Condition Value Symbol Parameter V CC (V) T A = 25 C -40 to 85 C -55 to 125 C Min. Typ. Max. Min. Max. Min. Max. Unit t TLH t THL t PLH t PHL Output Transition Time Propagation Delay Time ns ns CAPACITIVE CHARACTERISTICS Test Condition Value Symbol Parameter V CC T A = 25 C -40 to 85 C -55 to 125 C Unit (V) Min. Typ. Max. Min. Max. Min. Max. C IN Input Capacitance pf C PD Power Dissipation Capacitance (note pf 1) 1) C PD is defined as the value of the IC s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I CC(opr) = C PD x V CC x f IN + I CC /3 (per gate) 3/8

4 TEST CIRCUIT C L = 50pF or equivalent (includes jig and probe capacitance) R T = Z OUT of pulse generator (typically 50Ω) WAVEFORM : PROPAGATION DELAY TIMES (f=1mhz; 50% duty cycle) 4/8

5 Plastic DIP-14 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. a B b b D E e e F I L Z P001A 5/8

6 SO-14 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A a a b b C c1 45 (typ.) D E e e F G L M S 8 (max.) PO13G 6/8

7 TSSOP14 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A A A b c D E E e 0.65 BSC BSC K L A A2 A1 b e c K L E D E1 PIN 1 IDENTIFICATION D 7/8

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