Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS

Transcription

1 TECHNICAL DATA Quad 2-Input NAND Gate High-oltage Silicon-Gate CMOS The NAND gates provide the system designer with direct emplementation of the NAND function. Operating oltage Range:.0 to 18 Maximum input current of 1 µa at 18 over full packagetemperature range; 0 na at 18 and 25 C Noise margin (over full package temperature range): 1.0 supply 2.0 supply supply ORDERING INFORMATION N Plastic D SOIC T A = -55 to 125 C for all packages LOGIC DIAGRAM PIN ASSIGNMENT FUNCTION TABLE PIN 1 = CC PIN = GND Inputs Output A B Y L L H L H H H L H H H L

2 MAXIMUM RATINGS * Symbol Parameter alue Unit CC DC Supply oltage (Referenced to GND) -0.5 to +20 IN DC Input oltage (Referenced to GND) -0.5 to CC +0.5 OUT DC Output oltage (Referenced to GND) -0.5 to CC +0.5 I IN DC Input Current, per Pin ± ma P D Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ P D Power Dissipation per Output Transistor 0 mw Tstg Storage Temperature -65 to +0 C T L Lead Temperature, 1 mm from Case for Seconds (Plastic DIP or SOIC Package) * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - mw/ C from 65 to 125 C SOIC Package: : - mw/ C from 65 to 125 C mw 260 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit CC DC Supply oltage (Referenced to GND).0 18 IN, OUT DC Input oltage, Output oltage (Referenced to GND) 0 CC T A Operating Temperature, All Package Types C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, IN and OUT should be constrained to the range GND ( IN or OUT ) CC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or CC ). Unused outputs must be left open. 12

3 DC ELECTRICAL CHARACTERISTICS(oltages Referenced to GND) CC Guaranteed Limit Symbol Parameter Test Conditions -55 C 25 C 125 C IH IL OH OL I IN I CC I OL I OH Minimum High-Level Input oltage Maximum Low -Level Input oltage Minimum High-Level Output oltage Maximum Low-Level Output oltage Maximum Input Leakage Current Maximum Quiescent Supply Current (per Package) Minimum Output Low (Sink) Current Minimum Output High (Source) Current OUT =0.5 or CC OUT =1.0 or CC OUT = or CC - OUT = CC OUT = CC OUT = CC - IN =GND or CC IN = CC Unit IN = GND or CC 18 ±0.1 ±0.1 ±1.0 µa IN = GND or CC 20 IN = GND or CC U OL =0. U OL =0.5 U OL = IN = GND or CC U OH =2.5 U OH =.6 U OH =9.5 U OH = µa ma ma 1

4 AC ELECTRICAL CHARACTERISTICS(C L =50pF, R L =kω, Input t r =t f =20 ns) CC Guaranteed Limit Symbol Parameter -55 C 25 C 125 C Unit t PLH, t PHL t TLH, t THL Maximum Propagation Delay, Input A or B to Output Y (Figure 1) Maximum Output Transition Time, Any Output (Figure 1) C IN Maximum Input Capacitance -.5 pf ns ns Figure 1. Switching Waveforms EXPANDED LOGIC DIAGRAM (1/ of the Device) 1

5 This datasheet has been downloaded from: Datasheets for electronic components.