5061H series LVDS Output Oscillator ICs

Transcription

1 OVERVIEW 561H series LVDS Output Oscillator ICs The 561H series are LVDS output oscillator ICs that support a wide output frequency range ideal for high-frequency applications typical in high-speed communications devices. They employ an oscillator circuit optimized for compact, 3rd overtone crystal elements, making them ideal for use as compact, crystal oscillator modules. The oscillator circuit uses voltage regulator drive to achieve a low drive level. FEATURES Operating supply voltage range: 2.25 to 3.63V Frequency divider built-in Recommended oscillation frequency range (varies with version) Selectable by version: f, f /2, f /4 25MHz to 1MHz, 175MHz to 25MHz fundamental oscillation Standby function 5MHz to 14MHz, 175MHz to 22MHz 3rd overtone oscillation High impedance in standby mode, oscillator stops -4 to 125 C operating temperature range Power-saving pull-up resistor built-in (OE pin) LVDS output Oscillation capacitors C G, C D built-in SERIES CONFIGURATION Oscillation mode fundamental 3rd overtone fundamental Recommended oscillation frequency range *1 [MHz] C cancellation circuit 25 to 1 No Wafer form (WF561Hxx) Chip form (CF561Hxx) Recommended C value *2 [pf] Output frequency f f /2 f /4 to 1.5 (to 2.) *4 561HL6 *5 561HL7 *5 561HL8 *5 175 to Yes 1. to HF6 175 to to 63 to HA6 - - No 62 to 8 (to 2.5) *4 561HB to to HC6 - - Yes 1 to 14 (.8 to 2.5) *4 561HD6 - - *1. The oscillation frequency range is a target based on evaluation results for the crystal element used for NPC characteristics verification, and does not represent a guarantee of the oscillation frequency band. The oscillation characteristics can vary significantly depending on the characteristics and mounting conditions of the crystal. Accordingly, oscillation characteristics should be thoroughly evaluated for each crystal. *2. The oscillator circuit is optimized for 532 to 3225 sized crystal oscillators. When using 75 sized crystal elements that have large C, additional evaluation is recommended before implementation due to the increased risk of insufficient oscillation margin. *3. Normal recommended range based on the oscillator circuit design. *4. Values in ( ) are full range values. If using these ranges, careful evaluation is recommended before implementation. *5. L version is recommended for use with crystals such as compact AT cut crystals with extremely low C and R 1, and inverted mesa crystals. *6. The F version is adjusting C cancellation circuit rather hard to have a negative resistance by a high frequency. A self-oscillation tends to happen compared with the other versions, so please be careful about a lower limit of C. A self-oscillation becomes easy to happen coldly, so please be careful and do initial evaluation. R 1 in the F version is a fundamental wave ( 25MHz) 5 Ω in 3rd overtone ( 22MHz), and 2 Ω is an aim. ORDERING INFORMATION Device Package Version Name WF561Hxx-3 CF561Hxx-3 Wafer form Chip form Form WF:Wafer form CF:Chip(Die) form WF561H -3 Output frequency 6 : f, 7 : f /2, 8 : f /4 Oscillation frequency L : 25 to 1MHz A : 5 to 63MHz B : 62 to 8MHz C : 8 to 17MHz D : 1 to 14MHz F : 175 to 25MHz (fundamental) 175 to 22 MHz (3rd overtone) SEIKO NPC CORPORATION - 1

2 561H series PAD LAY (Unit: μm) Y N OE (475,375) (,) (-475,-375) VDD XIN X VSS Chip size:.95mm.75mm Chip thickness : 18μm PAD size : 11μm 8μm (No.1, 6, 7) 8μm 8μm (No.2, 3, 4, 5) Chip base : Vss level Coordinates at the chip center are (,). X PIN DESCRIPTION and PAD COORDINATES No. Name I/O *1 Function PAD coordinates [μm] 1 VDD - (+) supply voltage XIN I Crystal connection pins X O Crystal is connected between XIN and X VSS - (-) ground OE I Input pin controlled output state(oscillator stops when Low), Power-saving pull-up resistor built-in X Y N O LVDS output pin (Inverting output) O LVDS output pin (Non-inverting output) *1. I: Input pin O: Output pin BLOCK DIAGRAM VDD OE X R PU VRG C cancel R F XIN C G R D C D 1/N DIVIDER N=1,2,4 (Mask Option) LVDS N VSS Oscillation Circuit SEIKO NPC CORPORATION - 2

3 SPECIFICATIONS Absolute Maximum Ratings Vss=V 561H series Parameter Symbol Condition Rating Unit Supply voltage range *1 V DD Between VDD and VSS -.3 to +4. V Input voltage range *1*2 V IN Input pins -.3 to VDD+.3 V Output voltage range *1*2 V Output pins -.3 to VDD+.3 V Junction temperature *3 T j +15 C Storage temperature range *4 T STG Chip form, Wafer form -55 to +15 C *1. This parameter rating is the values that must never exceed even for a moment. This product may suffer breakdown if this parameter rating is exceeded. Operation and characteristics are guaranteed only when the product is operated at recommended operating conditions. *2. V DD is a V DD value of recommended operating conditions. *3. Do not exceed the absolute maximum ratings. If they are exceeded, a characteristic and reliability will be degraded. *4. When stored in nitrogen or vacuum atmosphere applied to IC itself only (excluding packaging materials). Recommended Operating Conditions Vss=V Parameter Symbol Condition MIN TYP MAX Unit Oscillator frequency *1 f Output frequency f 561HL6, HL7, HL HA HB HC HD HF6 3rd overtone fundamental HL HL HL HA HB HC HD HF6 3rd overtone fundamental Operating supply voltage V DD Between VDD and VSS * V Input voltage V IN Input pins - V DD V Operating temperature T a C Output load R L Between pin and N pin Ω *1. The oscillation frequency range is a target based on evaluation results for the crystal element used for NPC characteristics verification, and does not represent a guarantee of the oscillation frequency band. The oscillation characteristics can vary significantly depending on the characteristics and mounting conditions of the crystal. Accordingly, oscillation characteristics should be thoroughly evaluated for each crystal. *2. For stable device operation, connect a.1μf or larger ceramic chip capacitor between VDD and VSS, mounted close (within approximately 3mm) to the chip. Also, use the thickest wiring possible between the IC and capacitor. Note. Since it may influence the reliability if it is used out of range of recommended operating conditions, this product should be used within this range. MHz MHz SEIKO NPC CORPORATION - 3

4 561H series Electrical Characteristics DC Characteristics Measurement circuits 1 to 3 in Conditions are shown in MEASUREMENT CIRCUITS. V DD =2.25 to 3.63V, V SS =V, T a = -4 to +125 C unless otherwise noted. Parameter Symbol Conditions MIN TYP MAX Unit Current consumption (HLx ver.) Current consumption (HA6 ver.) Current consumption (HB6 ver.) Current consumption (HC6 ver.) Current consumption (HD6 ver.) Current consumption (HF6 ver.) I DDL _3.3V Measurement circuit 1,OE=Open V DD =3.3V I DDL _2.5V f =1MHz V DD =2.5V I DDA _3.3V Measurement circuit 1,OE=Open V DD =3.3V I DDA _2.5V f =62.5MHz V DD =2.5V I DDB _3.3V Measurement circuit 1,OE=Open V DD =3.3V I DDB _2.5V f =8MHz V DD =2.5V I DDC _3.3V Measurement circuit 1,OE=Open V DD =3.3V I DDC _2.5V f =16.25MHz V DD =2.5V I DDD _3.3V Measurement circuit 1,OE=Open V DD =3.3V I DDD _2.5V f =125MHz V DD =2.5V I DDF _3.3V Measurement circuit 1,OE=Open V DD =3.3V I DDF _2.5V f =2MHz V DD =2.5V Standby current I STB Measurement circuit 1,OE=Low T a < +85 C T a > +85 C High-level output voltage V OH Measurement circuit V Low-level output voltage V OL /N pin V Differential output voltage V OD Measurement circuit 2, /N pin mv Differential output voltage error ΔV OD Measurement circuit mv Offset voltage V OS Measurement circuit 2, -N pin middle tap V Offset voltage error ΔV OS Measurement circuit mv Output leakage current I Z Measurement circuit 3,OE=Low,/N pin μa High-level input voltage V IH Measurement circuit 1,OE pin.7v DD - - V Low-level input voltage V IL Measurement circuit 1,OE pin - -.3V DD V OE pin pull-up resistance R PU1 Measurement circuit MΩ R PU2 Measurement circuit kω ma ma ma ma ma ma μa Oscillator feedback resistance (HLx ver.) Oscillator feedback resistance (HA6 ver.) Oscillator feedback resistance (HB6 ver.) Oscillator feedback resistance (HC6 ver.) Oscillator feedback resistance (HD6 ver.) Oscillator feedback resistance (HF6 ver.) R FL Design value kω R FA Design value kω R.FB Design value kω R FC Design value kω R FD Design value kω R FE Design value kω SEIKO NPC CORPORATION - 4

5 561H series Parameter Symbol Conditions MIN TYP MAX Unit Oscillator capacitance (HLx ver.) Oscillator capacitance (HA6 ver.) Oscillator capacitance (HB6 ver.) Oscillator capacitance (HC6 ver.) Oscillator capacitance (HD6 ver.) Oscillator capacitance (HF6 ver.) C GL C DL Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance C GA Design value (a monitor pattern on a wafer is tested), C DA Excluding parasitic capacitance C GB Design value (a monitor pattern on a wafer is tested), C DB Excluding parasitic capacitance C GC Design value (a monitor pattern on a wafer is tested), C DC Excluding parasitic capacitance C GD Design value (a monitor pattern on a wafer is tested), C DD Excluding parasitic capacitance C GF Design value (a monitor pattern on a wafer is tested), - - C DF Excluding parasitic capacitance. - - pf pf pf pf pf pf SEIKO NPC CORPORATION - 5

6 AC Characteristics 561H series Measurement circuits 4 and 5 in Conditions are shown in MEASUREMENT CIRCUITS. The conditions for each parameter assume the timing shown in Timing chart. V DD = 2.25 to 3.63V, V SS = V, T a = -4 to +125 C unless otherwise noted Parameter Symbol Conditions MIN TYP MAX Unit Output duty cycle Duty Measurement circuit 4 Measured at differential output signal V (crossing point) % Output swing V OPP Measurement circuit 4, differential output signal V Output rise time t r Measurement circuit 4 Measured at 2% to 8% differential output swing ps Output fall time t f Measurement circuit 4 Measured at 8% to 2% differential output swing ps Output disable delay time t OD Measurement circuit 5 Time to becoming output Hi-Z at OE(fall)=V IL (Refer to the timing chart for details.) ns Note. The said values are measured by using the NPC standard crystal and jig for evaluation. It must be carefully evaluated so that the values can vary due to crystal characteristics, parasitic component of a mount board and a package. Timing chart tper Duty = tw tper 1 point N tw Hi-Z 8% 8% -N (Differential output) V VOPP V V V 2% 2% tr tf Hi-Z OE tod *1 VIH VIL *1. The /N output goes high impedance after the OE is fallen and then the output disable delay time t OD has elapsed. SEIKO NPC CORPORATION - 6

7 561H series FUNCTIONAL DESCRIPTION OE Function When OE goes LOW, the /N outputs stop and become high impedance. This function is used to disable the operation of the device. OE /N Oscillator High or Open f, f /2, f /4 Operating Low Hi-Z Stopped Power Saving Pull-up Resistor The OE terminal pull-up resistance switches between R PU1 and R PU2, depending on the input level (HIGH or LOW). When the OE terminal is held LOW, the built-in OE terminal pull-up resistance increases (R PU1 ), reducing the current consumed by the pull-up resistance when the outputs are disabled. When the device is operating with the OE terminal HIGH or open circuit, the pull-up resistance decreases (R PU2 ), reducing internal susceptibility to the effects of external noise. The OE terminal is held HIGH internally to prevent problems that might otherwise cause the outputs to stop abruptly. Oscillation Detection Function The 561H series have a built-in oscillation detection circuit. The oscillation detection circuit disables the output circuit when the oscillator starts until the oscillation becomes stable. This function limits the danger of unstable oscillation when the oscillator starts after power is first applied or the output is enabled. C cancellation circuit Oscillation circuit with a built-in C cancellation circuit provides a fixed compensation amount to cancel the effect of the crystal C. It reduces the C parameter in the equivalent circuit, reducing the shallow negative resistance for increasing values of C. This cancellation circuit makes it easier to maintain the oscillation margin. SEIKO NPC CORPORATION - 7

8 561H series MEASUREMENT CIRCUITS MEASUREMENT CIRCUIT 1 Measurement Parameter : I DD, I STB, V IH, V IL, R PU1, R PU2 I DD, I STB A.1μF VDD XIN 561H X N VSS OE 1pF R PU1 = RPU2 = V DD IPU V DD -.7V DD I PU (V IN = V) (V IN =.7V DD) V IH : VSS VDD voltage that changes output state VIL : V DD V SS voltage that changes output state V IN I PU A V V IH V IL MEASUREMENT CIRCUIT 2 Measurement Parameter : V OH, V OL, V OD, V OS.1μF VDD XIN 561H X N VSS OE V OH,V OL VOS,VOS ' X=High X=Low { { =High N=Low =Low N=High V OD = (High) - N(Low) V OD ' = N(High) - (Low) ΔV OD = V OD - V OD' V OS : =High, N=Low V OS ' : =Low, N=High ΔVOS = VOS - VOS ' MEASUREMENT CIRCUIT 3 Measurement Parameter : I Z.1μF VDD XIN 561H X N I z A I z A SW VSS OE SEIKO NPC CORPORATION - 8

9 561H series MEASUREMENT CIRCUIT 4 Measurement Parameter : Duty, V OPP, t r, t f.1μf VDD XIN Infiniium Oscilloscope InfiniiMax Probe Differential Solder-in Probe Head DSO864B (Agilent) 1134A (Agilent) E2677A (Agilent) 561H X N VSS OE Duty, VOPP, tr, tf 1pF MEASUREMENT CIRCUIT 5 Measurement Parameter : t OD.1μF Input Signal: 1Vp-p, sin Waveform Signal Generator.1μF VDD XIN 561H X N VSS OE SW Output Signal t OD: OE = V DD to V SS 1kΩ 1pF 1kΩ SEIKO NPC CORPORATION - 9

10 REFERENCE DATA 561H series The following characteristics are measured using the crystal below. Note that the characteristics will vary with the crystal used. Crystal used for measurement (3rd overtone) Parameter f =62.5MHz f =125MHz C (pf) R 1 (Ω) Crystal parameters L1 C1 R1 C Current Consumption Current consumption [ma] Supply voltage [V] Current consumption [ma] Supply voltage [V] 561HA6, f =62.5MHz, T a =25 C 561HD6, f =125MHz, T a =25 C Negative Resistance Frequency [MHz] Frequency [MHz] f min f max f min f max Negative resistance [Ω] C=2pF C=1pF C:none Negative resistance [Ω] C=2pF C=1pF C:none HA6, T a =25 C, V DD =3.3V 561HD6, T a =25 C, V DD =3.3V The figures show the measurement result of the crystal equivalent circuit C capacitance, connected between the XIN and X pins. They were performed with Agilent 4396B using the NPC test jig. They may vary in a measurement jig, and measurement environment. SEIKO NPC CORPORATION - 1

11 561H series Frequency Deviation by Voltage Frequency deviation [ppm] Supply voltage [V] Frequency deviation [ppm] Supply voltage [V] 561HA6, f =62.5MHz, T a =25 C, 3.3V std. 561HD6, f =156.25MHz, T a =25 C, 3.3V std. Drive Level Drive level [μw] Supply voltage [V] Drive level [μw] Supply voltage [V] 561HA6, f =62.5MHz, T a =25 C 561HD6, f =125MHz, T a =25 C Phase Noise Phase noies [dbc/hz] RMS jitter = 358fs (Offset frequency 12kHzto 2MHz) Floor level = -153dBc/Hz 1 1 1k 1k 1k 1M 1M 1M Offset frequency [Hz] Phase noies [dbc/hz] RMS jitter = 14fs (Offset frequency 12kHz to 2MHz) Floor level = -155dBc/Hz 1 1 1k 1k 1k 1M 1M 1M Offset frequency [Hz] 561HA6, f =62.5MHz, T a =25 C, V DD =3.3V 561HD6, f =125MHz, T a =25 C, V DD =3.3V Measurement equipment: Agilent E552B Signal Source Analyzer SEIKO NPC CORPORATION - 11

12 561H series Output Waveform N(.1V/div) Duty = 49.7% t r = 175ps t f = 17ps Time [ns] 561HA6, f =62.5MHz, V DD =3.3V, Ta=25 C, Differential output waveform N(.1V/div) Duty = 5.3% t r = 24ps t f = 26ps Time [ns] 561HD6, f =156.25MHz, V DD =3.3V, Ta=25 C, Differential output waveform Measurement equipment: Oscilloscope DSO864B (Agilent) Differential probe 1134A (Agilent) Probe head E2675A (Agilent) SEIKO NPC CORPORATION - 12

13 561H series Please pay your attention to the following points at time of using the products shown in this document. 1. The products shown in this document (hereinafter Products ) are designed and manufactured to the generally accepted standards of reliability as expected for use in general electronic and electrical equipment, such as personal equipment, machine tools and measurement equipment. The Products are not designed and manufactured to be used in any other special equipment requiring extremely high level of reliability and safety, such as aerospace equipment, nuclear power control equipment, medical equipment, transportation equipment, disaster prevention equipment, security equipment. The Products are not designed and manufactured to be used for the apparatus that exerts harmful influence on the human lives due to the defects, failure or malfunction of the Products. If you wish to use the Products in that apparatus, please contact our sales section in advance. In the event that the Products are used in such apparatus without our prior approval, we assume no responsibility whatsoever for any damages resulting from the use of that apparatus. 2. NPC reserves the right to change the specifications of the Products in order to improve the characteristics or reliability thereof. 3. The information described in this document is presented only as a guide for using the Products. No responsibility is assumed by us for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of the third parties. Then, we assume no responsibility whatsoever for any damages resulting from that infringements. 4. The constant of each circuit shown in this document is described as an example, and it is not guaranteed about its value of the mass production products. 5. In the case of that the Products in this document falls under the foreign exchange and foreign trade control law or other applicable laws and regulations, approval of the export to be based on those laws and regulations are necessary. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 1-9-9, Hatchobori, Chuo-ku, Tokyo 14-32, Japan Telephone: Facsimile: sales@npc.co.jp ND159-E SEIKO NPC CORPORATION - 13