S-8604BWI LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR. Rev.1.1_10

Transcription

1 Rev.1.1_10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR The is a linear image sensor suitable for a multichip contact image sensor with resolution of 8 dots per mm. The obtained image signals by light sensitive elements composed of 64 dots are provided sequentially as analog signals synchronous with the clock signal. Features Widely applicable scanning width for various sizes of paper : 8 mm. Various sizes of paper can be read by simply changing the number of chips aligned in a line. 2-input signals : SI, CLK Only two input signals, start and clock, can drive the IC. SIG pin reset function : Synchronized reset with CLK signal High sensitivity : High sensitivity photo-transistor Low image lag rate : Image lag rate is 1 / 3 compared to the SII current products. High operation speed : fck=2.5 MHz Low power consumption : 5 V single power supply and CMOS scanning circuit Terminal functions Table 1 Terminal No. Symbol Name Operation 1 SI Start input pin Shift resister data input pin CMOS input (Logic level is TTL-level) 2 CLK Clock input pin Shift register clock input pin CMOS input (Logic level is TTL-level) 3 VDD Power supply pin Normally +5V 4 GND Ground pin Normally 0V 5 SIG Video signal output pin Analog image signal output pin 6 N.C. 7 SO Start output pin Shift register data output pin Block diagram VDD GND ANALOG SWITCH SIG A.G. D.G. SCS RESET SI SCANNING CIRCUIT SO CLK Figure 1 Seiko Instruments Inc. 1

2 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Rev.1.1_10 Timing chart CLK SI SI(SO) tsu Tw th (SI for the 2nd and later ICs) RESET Active high RESET signal resets the SIG signal to the GND SO tplh tphl SIG SCS Figure 2 Absolute maximum ratings Table 2 Parameter Symbol Condition Rating Unit Power supply voltage V DD VDD-GND -0.4 to +7.0 V Input voltage V IN SI, CLK -0.4 to VDD+0.4 V Output voltage V OUT SO, SIG -0.4 to VDD+0.4 V Operating temperature T opr -5 to +85 C Storage temperature T stg -40 to +125 C Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Electric characteristics 1) DC characteristics Table 3 VDD=5V±10%, TOPR=55 C Parameter Symbol Condition Rating min. typ. Max. Unit Input voltage VIH SI, CLK 2.4 V VIL 0.8 Input current IIH SI, CLK 0.5 µa IIL -0.5 Output voltage VOH I OH = -100 µa 3.8 V VOL I OL = 100 µa 0.4 Current consumption IDD fck = 2.5 MHz ma Leak current IS VDD-GND 0.2 µa 2 Seiko Instruments Inc.

3 Rev.1.1_10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR 2) Switching characteristics Table 4 V DD =5 V±10 %, TOPR=55 C Parameter Symbol Condition Rating A B Unit min. typ. max. *1) *2) Clock pulse width Tw High period of CLK 100 (1/ fck) ns -100 Data set up time tsu 100 1/ fck ns Data hold time th 0 (1/ fck) ns -200 Clock frequency fck Assurance of shiftregister 2.5 MHz operation CLK-SO L-H t plh fck = 2.5 MHz 150 ns delay time C L = 10 pf CLK-SO H-L delay time t phl fck = 2.5 MHz C L = 10 pf 150 ns Output stable time 1 t pd ns *3) Output stable time 2 t pd2 300 ns *3) *1) 100% testing *2) Sampling inspection *3) Adopted for bright signal measurement of photoelectric conversion characteristics. Output Stable Time CLK 50 % 90 % 100 % SIG 10 % t pd1 t pd2 Figure 3 Seiko Instruments Inc. 3

4 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Rev.1.1_10 3) Photoelectric conversion characteristics Vp is measured using the measurement circuit of Figure-4 in the following condition. Condition : VDD=5 V, TOPR=55 C, fck=500 khz (duty=50 %) Read period RT=5 ms, Load capacitor CL=40 pf. Light source LED (λ =570 nm, half width λ =. 30nm, illuminance 12 lx.) Connecting a capacitor of 0.1 µf between VDD and GND. (AD843) +5V SIG 40pF + 5V Vp 1kΩ 1kΩ Av=2 Figure 4 Measurement Circuit Table 5 Parameter Symbol Condition Rating A B Unit min. typ. max. Note *1) *2) Bright signal Vpave Exposure value V See 3)-2 Ep = 0.06lx s dv1 Read period % See 3)-1 Bright signal dv2 RT = 5 ms % deviation dv % dv4 RT = 5 ms, % i = 2 to 62 RT = 5 ms, % i = 1, 63 dv1 RT = 5 ms, % +dv2 Dark signal 1 Vd1 RT = 5 ms, mv fck = 500 khz Dark signal 2 Vd2 RT = 32 ms, 240 mv Dark signal deviation in a wafer *4) dark fck = 2 khz RT = 5 ms, fck = 500 khz 0 9 mv Linearity γ See 3)-3 Image lag RIL 13 % See 3)-1 RIL_ave 10 % See 3)-1 Light response RIR 77 % See 3)-1 RIR_ave 80 % See 3)-1 *1) 100% testing *2) Sampling inspection *4) Deviation of the 64-bit average value of the dark signal 1 for each chip in a wafer. 4 Seiko Instruments Inc.

5 Rev.1.1_10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR 3)-1 Parameter definition Vp_ave : average output of all bit Vave1 : average output of the 2 nd to 10 th bit Vp_max : maximum output Vp_min : minimum output Vave2 : average output of the 28 th to 36 th bit Vp(i): the i th bit output ( i =1 to 63) Vave3 : average output of the 55 th to 63 rd bit V1 = Vave2 - Vave1 V2 = Vave3 - Vave2 V1 dv1 = 100 (%) Vp_ave V2 dv2 = 100 Vp_ave dv3 = Vp_max Vp_min 100 Vp_max + Vp_min dv4 = Vp(i) Vp( i + 1) Vp_ave 100 Vave3 Vave1 dv1 + dv2 = 100 Vp_ave RIL : Image lag rate for the 1 st to 64 th bit (cf. Figure-5) RIL_ave : Average of image lag rate for all bits (cf. Figure-5) RIR : Light response rate for the 1 st to 64 th bit (cf. Figure-5) RIR_ave : Average of light response rate for all bits (cf. Figure-5) LED OFF ON OFF SI SIG Vd Vp 100% Vp Light response : RIR 77% Image lag rate : RIL 13% Figure 5 Light Response Rate and Image Lag Rate Seiko Instruments Inc. 5

6 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Rev.1.1_10 3)-2 Bright signal ranking Table 6 Vp_ave (typ.)± 2.5 % RANK Vp_ave(V) Vp_ave(V) RANK min.( ) typ. max.(<) min.( ) typ. max.(<) A B C D E F )-3 Linearity The γ value is calculated using the non-linear regression based on the following equation, measuring Vp_ave every 0.01 Lx s from dark state to 0.06 Lx s. Vp_ave = A + B Ep γ (A,B: constant, Ep: exposure value) 6 Seiko Instruments Inc.

7 Rev.1.1_10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Pad configuration Chip size : 8000 µm 350 µm (before dicing) Y Photo detection windows AL AC AR (0,0) : The coordinate origin is the center of the scribe line of the lower left corner of the IC. Pad size : 100 µm 80 µm (Opening area) The distance between the boundary of a pad opening area and peripheral Al pattern 15µm X Figure 6 Table 7 Pad Coordinates Unit : µm PAD No. Coordinate Coordinate Name PAD No. Name X Y X Y 1 SI SIG CK N.C VDD SO GND Table 8 Alignment Mark Coordinates Unit:µm Alignment mark name Coordinate X Y AL AC AR Note : The coordinate origin is the center of the scribe line of the lower left corner of the IC, and the coordinate values point the center of the pads and the alignment marks. Chip size and sensor arrangement diagram (Center of scribe line) X Chip size : 8000 µm 350 µm (Before dicing) Shaded area : photo detection window (X=85, Y=60) Y P P (P=124.12) P P P P 79.5 P 31 P Figure 7 Unit : µm Seiko Instruments Inc. 7

8 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Rev.1.1_10 Wafer form Note: The arrangement of IC is subject to change without notice. (Sensor side) IC chip Wafer diameter : 6 inches φ Wafer thickness: 350 ± 30 µ m (Pad side) Wafer No. Lot No. Orientation Flat Figure 8 8 Seiko Instruments Inc.

9 Rev.1.1_10 Scribe line 60 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Unit : µm 60 (Scribe line area) (Photo detection window) (Passivasion boundary) Figure 9 Alignment mark Unit : µm Al pattern Passivasion opening The distance between the boundary of alignment marks and peripheral Al patterns shall be 15 µm or more. Figure 10 Seiko Instruments Inc. 9

10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Rev.1.1_10 Handling precautions Products are shipped in wafer or bare chip form. Keep these precautions when handling a product. 1. Protect against static electricity damage when mounting on a sawing or dicing machine. Wear charge-proof clothing and discharge all static electricity from body. Work on a grounded conductive mat. Ground all soldering irons and machines. Maintain room humidity from 50 to 60 %RH. 2. Prevent malfunctions due to corrosion of electrode pads. Do not store products in a high-temperature, humid and dusty environment or one that includes corrosive gas. Coat surface of IC with silicon resin to keep surface clean. Use clear and non-static packing material. Store products in a dry box filled with dry N2 gas having the dew point 30 C or less when storing products for 3 months or more. 3. Protect the internal Al lines and protective film of the IC when mounting products. Do not damage the surface of the IC when mounting a die or bonding wires. Do not touch the surface of the IC with tweezers. 4. Maintain the stability of the IC. Always supply VDD to the IC since the substrate is n-type semiconductor. Send the null data until the Vsig signal becomes stable at power on. Coat the IC with a transparent resin like silicon resin or enclose the IC with glass. Decrease the parasitic resistance of GND line and VDD line of the circuit board on which the IC is mounted. Decrease the parasitic capacitance between CLK and SIG of the circuit board on which the IC is mounted. Fix the cycle and duty of the input signal while operating. Mount a capacitor between VDD and GND to prevent influence of voltage fluctuation due to the response current of the IC. Decide the mounting method and the capacitance of the capacitor based on evaluation of the product in an actual application. 10 Seiko Instruments Inc.

11 The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.