S-8603 AWI. Rev.1.0_20 LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR. Circuit diagram

Transcription

1 Rev.1.0_0 LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR S-8603 AWI The S-8603AWI is a suitable linear image sensor for a multichip-type contact image sensor with a resolution of 8 dots per mm. This IC integrates a 64 dots photo-transistor array and a CMOS scanning circuit. icture signals are output one after another in analog signals, synchronized with a clock signal. Features Adjustable scanning length for various sizes of paper : 8 mm. Various sizes of paper can be read by simply changing the number of chips aligned in a line. -input signals : SI, CLK. Only these two input signals, start and clock, make the scanning easily. High sensitivity : High sensitive photo transistor. Low current consumption : 5 V single power supply and CMOS scanning circuit. Terminal functions Table-1 Terminal No. Symbol Name Operation 1 SI Start input pin Shift register data input pin CMOS input (Logic level is TTL- level) CLK Clock input pin Shift register clock input pin CMOS input (Logic level is TTL- level) 3 VDD ower supply pin Normally +5 V 4 GND Ground pin Normally 0 V 5 SIG Video signal output pin icture image analog signal output pin 6 N.C. 7 SO Start output pin Shift register data output pin Circuit diagram VDD GND SO SI A.G. D.G. SI Q Q Q Q Q Q D Q D Q D Q D Q D Q D Q M Q64 CLK M D SI SCS RGE SCE RGO SIG SCO RGS T T R Q Q64 SI Figure-1 Seiko Instruments Inc. 1

2 LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR S-8603 AWI Rev.1.0_0 Timing chart CLK (RGS) SI tsu SI(SO) R Tw th (SI for nd IC) (dash line : nd IC) SCO (RGE) SCE (RGO) Q0 Q1 Q Q63 Q64 SO tplh tphl SIG SCS Figure- Absolute maximum ratings Table- arameter Symbol Condition Rating Unit ower supply voltage V DD VDD-GND V Input voltage V IN SI, CLK -0.4 V DD +0.4 V Output voltage V OUT SO, SIG -0.4 V DD +0.4 V Operating temperature T opr C Storage temperature T stg C Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Electric characteristics 1) DC characteristics Table-3 V DD =5V±10%, TOR=55 C arameter Symbol Condition Rating Unit min. typ. max. Input voltage VIH SI, CLK.4 V VIL 0.8 Input current IIH SI, CLK 0.5 µa IIL -0.5 Output voltage VOH IOH = -100 µa 3.8 V VOL IOL = 100 µa 0.4 Current consumption IDD fck = 1 MHz ma Leak current IS VDD-GND 0. µa Seiko Instruments Inc.

3 Rev.1.0_0 LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR S-8603 AWI ) Switching characteristics Table-4 V DD =5V±10%, TOR=55 C arameter Symbol Condition Rating Unit A B min. typ. max. *1) *) Clock pulse width Tw High period of CLK 100 (1/fck) ns -100 Data set up time tsu 100 1/fck ns Data hold time th 0 (1/fck) ns -00 Clock frequency fck Assurance of shiftregister.5 MHz operation CLK-SO L-H tplh fck =.5 MHz 150 ns delay time C L = 10 pf CLK-SO H-L delay time tphl fck =.5 MHz C L = 10 pf 150 ns Output stable time1 tpd1 900 ns *3) Output stable time tpd 300 ns *3) *1) All products are tested. *) Extracted products are examined. *3) At measuring light level of photoelectric conversion characteristics. (Note) CLK 50% 90% 100% SIG 10% tpd1 tpd Figure-3 Seiko Instruments Inc. 3

4 LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR S-8603 AWI Rev.1.0_0 3) hotoelectric conversion characteristics Condition : VDD=5 V, TOR=55 C, fck=500 khz(duty=50 %) Read period RT=5 ms, load capacitor C L =100 pf Light source LED (λ =570 nm, half width λ 30 nm, illuminance 1 lx) Connecting a capacitor of 0.1 µf between VDD and GND. Vp is measured using the measurement circuit of Figure-4. (AD843) +5V SIG CLK 74HC pf + 5V Vp 1kΩ 1kΩ Av= Figure-4 Measurement circuit Table-5 arameter Symbol Condition Rating Unit Note A B min. typ. max. *1) *) Light level Vpave Exposure value V 3)- Ep = 0.06 lx s dv1 Read period % 3)-1 Light level dv RT = 5 ms % deviation dv % dv4, i = %, i = 1, % dv1 RT = 5 ms % +dv Dark level 1 Vd1 RT = 5 ms 4 60 mv fck = 500 khz Dark level Vd RT = 3 ms 40 mv fck = khz Dark level deviation inside the wafer *4) dark RT = 5 ms fck = 500 khz 0 9 mv Linearity γ )-3 Image lag RIL measuring Vpave 40 % 3)-1 Light response RIR measuring Vpave 35 % 3)-1 *1) All products are tested. *) Extracted products are examined. *4) The deviation of the average value of Vd1(1 64 bit) inside a wafer. 4 Seiko Instruments Inc.

5 Rev.1.0_0 LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR S-8603 AWI 3)-1 arameter definition Vp_ ave : average of all bit output Vp_ max : maximum output Vave1: average of 10bit Vp_ min : Fminimum output Vave : average of 8 36bit Vp(i) : i bit output ( i =1 to 63) Vave3 : average of 55 63bit V1 = Vave - Vave1 V = Vave3 - Vave V1 dv1= 100 (%) Vp_ ave V dv = 100 Vp_ ave Vp_ max Vp_ min dv3 = 100 Vp_ max + Vp_ min Vp(i) Vp(i + 1) dv4 = 100 Vp_ ave Vave3 Vave1 dv1+ dv = 100 Vp_ ave RIL : Image lag (cf. Figure-5) RIR : Light response (cf. Figure-5) LED OFF ON OFF SI SIG Vd Vp 100% Vp Light response : RIR 35% Image lag : RIL 40% Figure-5 Seiko Instruments Inc. 5

6 LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR S-8603 AWI Rev.1.0_0 3)- Light level ranking Table-6 Vpave(typ) ±.5 % RANK Vpave(V) RANK Vpave(V) min.( ) typ. max.(<) min.( ) typ. max.(<) A B C D E F )-3 Linearity γ value is achieved using the non-linear regression based on the following equation, measuring Vp every 0.01 Lx s from dark status to 0.06 Lx s. γ Vp_ ave = A + B Ep (A,B: constant, Ep: exposure value) 6 Seiko Instruments Inc.

7 Rev.1.0_0 LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR S-8603 AWI ad configuration Chip size : 8000µm 350µm (before scribing) hoto detecting windous AL 1 3 AC AR (0,0) : The coordinate origin is the center of left bottom scribing area ad size : 100µm 80µm (Opening area) The minimum distance between boundary of pad opening area and Al pattern 15µm Figure-6 Table-7 Unit : µm AD No. Name Coordinate AD No. Name Coordinate X Y X Y 1 SI SIG CK N.C VDD SO GND Table-8 Unit:µm Alignment mark Coordinate name X Y AL AC AR Note : The coordinate origin is the center of the scribe line of the lower left corner of the IC, and the coordinate values point the center of the pads and the alignment marks. Chip size and sensor arrangement diagram Chip size : 8000 µm 350 µm (before scribing) Shaded area : photo detecting window (X=85,Y=60) (Scribe center) X Y (=14.1) Figure-7 Unit : µm Seiko Instruments Inc. 7

8 LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR S-8603 AWI Rev.1.0_0 Wafer form Note: The arrangement of IC is subject to change without notes. (Sensor side) IC chip Wafer diameter : 6 inches φ Wafer thickness: 350 ± 30 µ m (ad side) Wafer No. Lot No. Orientation Flat Figure-8 8 Seiko Instruments Inc.

9 Rev.1.0_0 LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR S-8603 AWI Scribe line 60 (Unit : µm) 60 (Scribe line area) (hoto detecting window) (assivasion boundary) Figure-9 Alignment mark (Unit : µm) Al pattern assivasion opening Figure-10 The minimum distance between boundary of pad opening area and Al pattern area has to be 15 µm or more. Seiko Instruments Inc. 9

10 LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR S-8603 AWI Rev.1.0_0 Handling precautions roducts are shipped in wafer or bare chip form. Keep these precautions when handling a product. 1. rotect against static electricity damage when mounting on a sawing or dicing machine. Wear charge-proof clothing and discharge all static electricity from body. Work on a grounded conductive mat. Ground all soldering irons and machines. Maintain room humidity from 50 to 60 %RH.. revent malfunctions due to corrosion of electrode pads. Do not store products in a high-temperature, humid and dusty environment or one that includes corrosive gas. Coat surface of IC with silicon resin to keep surface clean. Use clear and non-static packing material. Store products in a dry box filled with dry N gas having the dew point 30 C or less when storing products for 3 months or more. 3. rotect the internal Al lines and protective film of the IC when mounting products. Do not damage the surface of the IC when mounting a die or bonding wires. Do not touch the surface of the IC with tweezers. 4. Maintain the stability of the IC. Always supply VDD to the IC since the substrate is n-type semiconductor. Send the null data until the Vsig signal becomes stable at power on. Coat the IC with a transparent resin like silicon resin or enclose the IC with glass. Decrease the parasitic resistance of GND line and VDD line of the circuit board on which the IC is mounted. Decrease the parasitic capacitance between CLK and SIG of the circuit board on which the IC is mounted. Fix the cycle and duty of the input signal while operating. Mount a capacitor between VDD and GND to prevent influence of voltage fluctuation due to the response current of the IC. Decide the mounting method and the capacitance of the capacitor based on evaluation of the product in an actual application. 10 Seiko Instruments Inc.

11 The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.