LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR S-8603AWI

Transcription

1 rev..0 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR The is a suitable linear image sensor for a multichip-type contact image sensor with a resolution of 8 dots per mm. This IC integrates a 64dots photo-transistor array and a CMOS scanning circuit. icture signals are output one after another in analog signals, synchronized with a clock signal. Features Adjustable scanning length for various sizes of paper : 8mm. Various sizes of paper can be read by simply changing the number of chips aligned in a line. -input signals : SI, CLK. Only these two input signals, start and clock, make the scanning easily. High sensitivity : High sensitive photo transistor. Low current consumption : 5V single power supply and CMOS scanning circuit. Terminal functions Table- Terminal Symbol Name Operation No. SI Start input pin Shift register data input pin CLK Clock input pin Shift register clock input pin 3 VDD ower supply pin Normally +5V 4 GND Ground pin Normally 0V 5 Video signal output pin icture image analog signal output pin 6 N.C. 7 SO Start output pin Shift register data output pin Circuit diagram VDD GND SO SI A.G. D.G. SI Q Q Q Q Q Q D Q D Q D Q D Q D Q D Q M Q64 CLK M D SI SCS RGE SCE RGO SCO T T RGS R Q Q64 SI Figure- Seiko Instruments Inc.

2 rev..0 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Timing chart CLK (RGS) SI Tsu SI(SO) R Tw Th (SI for nd IC) (dash line : nd IC) SCO (RGE) SCE (RGO) Q0 Q Q Q63 Q64 SO Tplh Tphl SCS Figure- Absolute maximum ratings Table- arameter Symbol Condition Rating Unit ower supply voltage VDD VDD-GND V Input voltage VIN SI, CLK -0.4 VDD+0.4 V Output voltage VOUT SO, -0.4 VDD+0.4 V Operating temperature TOR C Storage temperature TSTR C Electric characteristics ) DC characteristics Table-3 VDD=5V±0%, TOR=typ.55 C arameter Symbol Condition Rating Unit min. typ. max. Input voltage VIH SI, CLK.4 V VIL 0.8 Input current IIH SI, CLK 0.5 µa IIL -0.5 Output voltage VOH IOH = -00µA 3.8 V VOL IOL = 00µA 0.4 Current consumption IDD fck = MHz ma Leak current IS VDD-GND 0. µa Seiko Instruments Inc.

3 rev..0 ) Switching characteristics Table-4 VDD=5V±0%, TOR=typ.55 C arameter Sym Condition Rating Unit A B bol min. typ. max. *) *) Clock pulse width Tw High period of CLK 00 (/ fck) nsec -00 Data set up time Tsu 00 / fck nsec Data hold time Th 0 (/ fck) nsec -00 Clock frequency fck Assurance of shiftregister.5 MHz operation CLK-SO L-H Tplh fck =.5MHz 50 nsec delay time CL = 0 pf CLK-SO H-L delay time Tphl fck =.5 MHz CL = 0 pf 50 nsec Output stable time Tpd 900 nsec *3) Output stable time Tpd 300 nsec *3) *) All products are tested. *) Extracted products are examined. *3) At measuring light level of photoelectric conversion characteristics. (Note) CLK 50% 90% 00% 0% Tpd Tpd Figure-3 Seiko Instruments Inc. 3

4 rev..0 3) hotoelectric conversion characteristics Condition : VDD=5V, TOR=55 C, fck=500 khz(duty=50%) Read period RT=5 msec, load capacitor CL=00pF Light source LED (λ =570 nm, half width λ 30nm, illuminance lx) Connecting a capacitor of 0.µF between VDD and GND. Vp is measured using the measurement circuit of Figure-4. (AD843) +5V CLK 74HC pF + 5V Vp kω kω Av= Figure-4 Measurement circuit Table-5 arameter Symol Condition Rating Unit Note A B min. typ. max. *) *) Light level Vpave Exposure value V 3)- Ep = 0.06lxsec dv Read period % 3)- Light level dv RT = 5 msec % deviation dv % dv4, i = %, i =, % dv RT = 5 msec % +dv Dark level Vd RT = 5 msec 4 60 mv fck = 500 khz Dark level Vd RT = 3 msec fck = khz 40 mv Dark level deviation inside the wafer *4) dark RT = 5 msec fck = 500 khz 0 9 mv Linearity γ )-3 Image lag RIL measuring Vpave 40 % 3)- Light response RIR measuring Vpave 35 % 3)- *) All products are tested. *) Extracted products are examined. *4) The deviation of the average value of Vd( 64bit) inside a wafer. Seiko Instruments Inc. 4

5 rev..0 3)- arameter definition Vpave: average of all bit output Vave: average of 0bit Vave : average of 8 36bit Vp max : maximum output Vp min : Fminimum output Vp(): i i bit output ( i = 63) Vave3: average of 55 63bit V= Vave Vave V = Vave3 Vave V dv = 00 Vpave (%) V dv = 00 Vpave Vp Vp dv 3 max min = Vp max+ Vp min 00 Vp() i Vp( i + ) dv 4 = 00 Vpave Vave3 Vave dv + dv = 00 Vpave RIL : Image lag (cf. Figure-5) RIR : Light response (cf. Figure-5) LED OFF ON OFF SI Vd Vp 00% Vp Light response : RIR 35% Image lag : RIL 40% Figure-5 Seiko Instruments Inc. 5

6 rev..0 3)- Light level ranking Table-6 ( Vpave(typ) ±.5 % ) RANK Vpave(V) RANK Vpave(V) min.( ) typ. max.(<) min.( ) typ. max.(<) A B C D E F )-3 Linearity γ value is achieved using the non-linear regression based on the following equation, measuring Vp every 0.0 Lxsec from dark status to 0.06 Lxsec. γ Vpave = A + B Ep (A,B: constant, Ep: exposure value) Seiko Instruments Inc. 6

7 rev..0 ad configuration Chip size : 8000µm 350µm (before scribing) hoto detecting windous AL 3 AC AR (0,0) : The coordinate origin is the center of left bottom scribing area ad size : 00µm 80µm (Opening area) The minimum distance between boundary of pad opening area and Al pattern 5µm Figure-6 Table-7 Unit : µm AD No. Name Coordinate AD No. Name Coordinate X Y X Y SI CK N.C VDD SO GND Table-8 Unit:µm Alignment mark Coordinate name X Y AL 40 0 AC AR Note : The coordinate value is the center coordinate of the pad and the alignment mark. Chip size and sensor arrangement diagram Shaded area : photo detecting window (X=85,Y=60) (Scribe center) X Y (=4.) Figure-7 Unit : µm Seiko Instruments Inc. 7

8 rev..0 Wafer form Note: The arrangement of IC is subject to change without notes. Wafer diameter : 6inch φ Wafer thickness : 350±30µm Orientation Flat (sensor side) (pad side) Lot No. - Wafer No. Figure-8 Seiko Instruments Inc. 8

9 rev..0 Scribe line 60 (Unit : µm) 60 (Scribe line area) 5 50 (hoto detecting window) (assivation boundary) Figure-9 Alignment mark (Unit : µm) Al pattern assivasion opening Figure-0 The minimum distance between boundary of pad opening area and Al pattern area has to be 5µm or more. Seiko Instruments Inc. 9