S-8604BWI LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR

Transcription

1 Rev.1.10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR The is a linear image sensor suitable for a multichip contact image sensor with resolution of 8 dots per mm. The obtained image signals by light sensitive elements composed of 64 dots are provided sequentially as analog signals synchronous with the clock signal. Features Widely applicable scanning width for various sizes of paper : 8 mm. xxxvarious sizes of paper can be read by simply changing the number of chips aligned in a line. 2-input signals : SI, CLK xxxonly two input signals, start and clock, can drive the IC. SIG pin reset function : Synchronized reset with CLK signal High sensitivity : High sensitivity photo-transistor Low image lag rate : Image lag rate is 1/3 compared to the SII current products. High operation speed : fck=2.5 MHz Low power consumption : 5V single power supply and CMOS scanning circuit Terminal functions Table 1 Terminal No. Symbol Name Operation 1 SI Start input pin Shift register data input pin 2 CLK Clock input pin Shift register clock input pin 3 VDD Power supply pin Normally +5V 4 GND Ground pin Normally 0V 5 SIG Video signal output pin Analog image signal output pin 6 N.C. 7 SO Start output pin Shift register data output pin Block diagram VDD GND ANALOG SWITCH SIG A.G. D.G. SCS RESET SI SCANNING CIRCUIT SO CLK Figure 1 Seiko Instruments Inc. 1

2 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Rev.1.10 Timing chart CLK SI SI(SO) Tsu Tw Th (SI for the 2nd and later ICs) RESET Active high RESET signal resets the SIG signal to the ground. SO Tplh Tphl SIG SCS Figure 2 Absolute maximum ratings Table 2 Parameter Symbol Condition Rating Unit Power supply voltage VDD VDD-GND -0.4 to +7.0 V Input voltage VIN SI, CLK -0.4 to VDD+0.4 V Output voltage VOUT SO, SIG -0.4 to VDD+0.4 V Operating temperature TOPR -5 to +85 C Storage temperature TSTR -40 to +125 C Electric characteristics 1) DC characteristics Table 3 VDD=5V±10%, TOPR=typ.55 C Parameter Symbol Condition Rating min. typ. Max. Unit Input voltage VIH SI, CLK 2.4 V VIL 0.8 Input current IIH SI, CLK 0.5 µa IIL -0.5 Output voltage VOH IOH = -100 µa 3.8 V VOL IOL = 100 µa 0.4 Current consumption IDD fck = 2.5 MHz ma Leak current IS VDD-GND 0.2 µa 2 Seiko Instruments Inc.

3 Rev.1.10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR 2) Switching characteristics Table 4 VDD=5V±10%, TOPR=typ.55 C Parameter Symbol Condition Rating A B Unit min. typ. max. *1) *2) Clock pulse width Tw High period of CLK 100 (1/ fck) nsec { -100 Data set up time Tsu 100 1/ fck nsec { Data hold time Th 0 (1/ fck) nsec { -200 Clock frequency fck Assurance of shiftregister 2.5 MHz { operation CLK-SO L-H Tplh fck = 2.5 MHz 150 nsec { delay time CL = 10 pf CLK-SO H-L Tphl fck = 2.5 MHz 150 nsec { delay time CL = 10 pf Output stable time 1 Tpd nsec { *3) Output stable time 2 Tpd2 300 nsec { *3) *1) 100% testing *2) Sampling inspection *3) Adopted for bright signal measurement of photoelectric conversion characteristics. See figure 3. Output Stable Time CLK 50% 90% 100% SIG 10% Tpd1 Tpd2 Figure 3 Seiko Instruments Inc. 3

4 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Rev ) Photoelectric conversion characteristics Vp is measured using the measurement circuit of Figure-4 in the following condition. Condition : VDD=5 V, TOPR=55 C, fck=500 khz (duty=50 %) Read period RT=5 msec, Load capacitor CL=40 pf Light source LED (λ =570 nm, half width λ 30nm, illuminance 12 lx) Connecting a capacitor of 0.1 µf between VDD and GND. (AD843) +5V SIG 40pF + 5V Vp 1kΩ 1kΩ Av=2 Figure 4 Measurement Circuit Table 5 Parameter Symbol Condition Bright signal Vpave Exposure value Ep = 0.06lxxsec Rating A B Unit min. typ. max. Note *1) *2) V See 3)-2 { dv1 Read period % See 3)-1 { Bright signal dv2 RT = 5 msec % { deviation dv % dv4 RT = 5 msec, % { { i = 2 to 62 RT = 5 msec, % { i = 1, 63 dv1 RT = 5 msec % { +dv2 Dark signal 1 Vd1 RT = 5 msec mv { fck = 500 khz Dark signal 2 Vd2 RT = 32 msec 240 mv { fck = 2 khz Dark signal dark RT = 5 msec 0 9 mv { deviation fck = 500 khz in a wafer *4) Linearity γ See 3)-3 { Image lag RIL 13 % See 3)-1 { RILave 10 % See 3)-1 { Light response RIR 77 % See 3)-1 { RIRave 80 % See 3)-1 { *1) 100% testing *2) Sampling inspection *4) Deviation of the 64-bit average value of the dark signal 1 for each chip in a wafer. 4 Seiko Instruments Inc.

5 Rev.1.10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR 3)-1 Parameter definition Vpave: average output of all bit Vave1: average output of the 2 nd 10 th bit Vave2 : average output of the 28 th 36 th bit Vp max : maximum output Vp min : minimum output Vp(): i the i th bit output ( i =1 63) Vave3: average output of the 55 th 63 rd bit V1= Vave2 Vave1 V 2= Vave3 Vave2 V1 dv1 = 100 Vpave (%) V 2 dv 2 = 100 Vpave Vp Vp dv 3 max min = Vp max+ Vp min 100 Vp() i Vp( i + 1) dv 4 = 100 Vpave Vave3 Vave1 dv1 + dv 2 = 100 Vpave RIL : Image lag rate for the 1 st to 64 th bit (cf. Figure-5) RILave : Average of image lag rate for all bits (cf. Figure-5) RIR : Light response rate for the 1 st to 64 th bit (cf. Figure-5) RIRave : Average of light response rate for all bits (cf. Figure-5) LED OFF ON OFF SI SIG Vd Vp 100% Vp Light response : RIR 77% Image lag rate : RIL 13% Figure 5 Light Response Rate and Image Lag Rate Seiko Instruments Inc. 5

6 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Rev )-2 Bright signal ranking Table 6 Vpave(typ) ± 2.5 % RANK Vpave(V) Vpave(V) RANK min.( ) typ. max.(<) min.( ) typ. max.(<) A B C D E F )-3 Linearity The γ value is calculated using the non-linear regression based on the following equation, measuring Vpave every 0.01 Lxxsec from dark state to 0.06 Lxxsec. γ Vpave = A + B Ep (A,B: constant, Ep: exposure value) 6 Seiko Instruments Inc.

7 Rev.1.10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Pad configuration Chip size : 8000µm 350µm (before dicing) Y AL 1 2 Photo detection windows 3 AC AR (0,0) : The coordinate origin is the center of the scribe line of the lower left corner of the IC. Pad size : 100µm 80µm (Opening area) The distance between the boundary of a pad opening area and peripheral Al pattern 15µm Figure 6 Table 7 Pad Coordinates Unit : µm PAD No. Coordinate Coordinate Name PAD No. Name X Y X Y 1 SI SIG CK N.C VDD SO GND X Table 8 Alignment Mark Coordinates Unit:µm Alignment mark name Coordinate X Y AL AC AR Note : The coordinate origin is the center of the scribe line of the lower left corner of the IC, and the coordinate values point the center of the pads and the alignment marks. Chip size and sensor arrangement diagram (Center of scribe line) X Chip size : 8000 µm 350 µm (Before dicing) Shaded area : photo detection window (X=85, Y=60) Y P P (P=124.12) P P P P 79.5 P 31 P Unit : µm Figure 7 Seiko Instruments Inc. 7

8 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Rev.1.10 Wafer form Note: The arrangement of IC is subject to change without notice. (sensor side) Water diameter : 6inch φ Water thickness : 350±30µm (pad side) Lot No. Orientation Flat Table 8 8 Seiko Instruments Inc.

9 Rev.1.10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Scribe line 60 Unit : µm 60 (Scribe line area) (Photo detection window) (Passivation boundary) Figure 9 Alignment mark Unit : µm Al pattern Passivasion opening The distance between the boundary of alignment marks and peripheral Al patterns shall be 15µm or more. Figure 10 Seiko Instruments Inc. 9

10 LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR Rev.1.10 Handling precautions Products are shipped in wafer or bare chip form. Keep these precautions when handling a product. 1. Protect against static electricity damage when mounting on a sawing or dicing machine. Wear charge-proof clothing and discharge all static electricity from body. Work on a grounded conductive mat. Ground all soldering irons and machines. Maintain room humidity from 50 to 60%RH. 2. Prevent malfunctions due to corrosion of electrode pads. Do not store products in a high-temperature, humid and dusty environment or one that includes corrosive gas. Coat surface of IC with silicon resin to keep surface clean. Use clear and non-static packing material. Store products in a dry box filled with dry N2 gas having the dew point 30 C or less when storing products for 3 months or more. 3. Protect the internal Al lines and protective film of the IC when mounting products. Do not damage the surface of the IC when mounting a die or bonding wires. Do not touch the surface of the IC with tweezers. 4. Maintain the stability of the IC. Always supply VDD to the IC since the substrate is n-type semiconductor. Send the null data until the Vsig signal becomes stable at power on. Coat the IC with a transparent resin like silicon resin or enclose the IC with glass. Decrease the parasitic resistance of GND line and VDD line of the circuit board on which the IC is mounted. Decrease the parasitic capacitance between CLK and SIG of the circuit board on which the IC is mounted. Fix the cycle and duty of the input signal while operating. Mount a capacitor between VDD and GND to prevent influence of voltage fluctuation due to the response current of the IC. Decide the mounting method and the capacitance of the capacitor based on evaluation of the product in an actual application. 10 Seiko Instruments Inc.