12-27 MHz XO IC with 1 Pair of LVDS and 1 CMOS Outputs

Transcription

1 FETURES Low jitter XO for the 2MHz to 27MHz range. Integrated crystal load capacitor: no external load capacitor required. pair of LVDS outputs and CMOS output MHz fundamental crystal input. Low jitter (RMS): 2.5 ps period jitter ( sigma). 2.5V to 3.3V operation. vailable in 8-Pin SOIC package. VDD XIN X GND PIN CONFIGURTION (Top View) CMOS_CLK LVDSBR_CLK LVDS_CLK GND DESCRIPTION (8 pin SOIC) The is a high performance multiple output XO IC chip. It provides pair of LVDS and CMOS outputs. The chip combines a crystal oscillator (XO) with a multiple-output buffer. It accepts a low cost fundamental parallel resonant mode crystal from 2MHz to 27MHz, which is reproduced at the outputs. The very low jitter (2.5 ps RMS period jitter) makes this chip ideal for data and telecommunication applications. BLOCK DIGRM XIN X Oscillator mplifier CMOS_CLK LVDS_CLK LVDSBR_CLK Esperanza., Rancho Santa Margarita, Ca Ph: Fax: /2/05 Page

2 PIN DESCRIPTION Name Pin Number Type Description VDD P Power Supply. XIN 2 I Crystal input. This is the input of the crystal oscillator circuitry. The crystal should be mounted as close to the IC as possible, with minimum parasitic capacitance. X 3 I Crystal output. This is the output of the crystal oscillator circuitry. The crystal should be mounted as close to the IC as possible, with minimum parasitic capacitance. GND 4,5 P Ground. LVDS_CLK 6 O LVDS output. LVDSBR_CLK 7 O LVDS complementary output. CMOS_CLK 8 O CMOS output. ELECTRICL SPECIFICTIONS. bsolute Maximum Ratings PRMETERS SYMBOL MIN. MX. UNITS Supply Voltage VDD 4.6 V Input Voltage, dc VI -0.5 VDD+0.5 V Output Voltage, dc VO -0.5 VDD+0.5 V Storage Temperature TS C mbient Operating Temperature* T C Junction Temperature TJ 25 C Lead Temperature (soldering, 0s) 260 C ESD Protection, Human Body Model 2 kv Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other conditions above the operational limits noted in this specification is not implied. * Note: Operating Temperature is guaranteed by design for all parts (COMMERCIL and INDUSTRIL), but tested for COMMERCIL grade only. 2. Crystal Specifications Crystal Resonator Frequency FXIN Parallel Fundamental Mode 2 27 MHz Crystal Loading Rating CL (xtal) 2.5 pf Recommended ESR RE 30 Ω Esperanza., Rancho Santa Margarita, Ca Ph: Fax: /2/05 Page 2

3 3. General Electrical Specifications Operating Voltage VDD V CMOS outputs Supply Current, Dynamic (with Loaded IDD Fout = 2 MHz 5 20 loaded with 5pF, LVDS outputs loaded Outputs) Fout = 25 MHz with 00 Ω m Short Circuit Current ±50 m 4. C Electrical Specifications Input Crystal Frequency 2 27 MHz Output Clock Rise Time tr 0.8V ~ 2.0V with 0 pf load.5 tr 0.3V ~ 3.0V with 5 pf load 2 5 Output Clock Fall Time tf 2.0V ~ 0.8V with 0 pf load.5 tf 3.0V ~ 0.3V with 5pF load 2 5 ns Output Clock Duty Cycle 5. Jitter Specifications V (LVDS) % VDD (CMOS) PRMETERS CONDITIONS FREQUENCY MIN. TYP. MX. UNITS Period jitter RMS Peak to Peak jitter With capacitive decoupling between VDD and GND. With capacitive decoupling between VDD and GND. Over 0,000 cycles. 6. CMOS Output Electrical Specifications 25MHz ps 25MHz 8 30 ps Output High Voltage VOH IOH = -2m 2.4 V Output Low Voltage VOL IOL = 2m 0.4 V Output High Voltage at CMOS level VOHC IOH = -4m VDD 0.4 V Output drive current t TTL level 0 m 7. CMOS Switching Characteristics Output Clock Rise/Fall Time 0.8V ~ 2.0V with 0 pf load.5 (Standard Drive) 0.3V ~ 3.0V with 5 pf load 2.4 Output Clock Rise/Fall Time 0.8V ~ 2.0V with 0 pf load 0.5 ns (High Drive) 0.3V ~ 3.0V with 5 pf load.5 % Esperanza., Rancho Santa Margarita, Ca Ph: Fax: /2/05 Page 3

4 8. LVDS Electrical Characteristics Output Differential Voltage VOD mv VDD Magnitude Change VOD mv Output High Voltage VOH RL = 00 Ω.4.6 V Output Low Voltage VOL (see figure) 0.9. V Offset Voltage VOS V Offset Magnitude Change VOS mv Power-off Leakage IOXD Vout = VDD or GND VDD = 0V ± ±0 u Output Short Circuit Current IOSD m 9. LVDS Switching Characteristics Differential Clock Rise Time tr RL = 00 Ω ns CL = 0 pf Differential Clock Fall Time tf (see figure) ns LVDS Levels Test Circuit LVDS Switching Test Circuit 50Ω C L = 0pF V OD V OS V DIFF R L = 00Ω 50Ω C L = 0pF LVDS Transistion Time Waveform 0V (Differential) 80% 80% V DIFF 0V 20% 20% t R t F Esperanza., Rancho Santa Margarita, Ca Ph: Fax: /2/05 Page 4

5 PCKGE INFORMTION 8 PIN SOIC (mm ) Narrow SOIC Symbol Min. Max B C D E H L e.27 BSC e B D C E H L ORDERING INFORMTION For part ordering, please contact our Sales Department: Esperanza., Rancho Santa Margarita, Ca Ph: Fax: PRT NUMBER The order number for this device is a combination of the following: Device number, Package type and Operating temperature range S C PRT NUMBER TEMPERTURE C=COMMERCIL I=INDUSTRIL PCKGE TYPE S=SOIC Order Number Marking Package Option SC-T SC SOIC - Tape and Reel SC SC SOIC - Tube bracon Corporation, reserves the right to make changes in its products or specifications, or both at any time without notice. The information furnished by bracon is believed to be accurate and reliable. However, bracon makes no guarantee or warranty concerning the accuracy of said information and shall not be responsible for any loss or damage of whatever nature resulting from the use of, or reliance upon this product. LIFE SUPPORT POLICY: bracon s products are not authorized for use as critical components in life support devices or systems without the express written approval of the President of bracon Corporation Esperanza., Rancho Santa Margarita, Ca Ph: Fax: /2/05 Page 5