DUAL BIPOLAR OPERATIONAL AMPLIFIERS General Description. Features. Applications

Transcription

1 General Description The consists of two high performance operational amplifiers. The IC features high gain, low equivalent input noise voltage, high input resistance, excellent channel separation, wide range of operating voltage and internal frequency compensation. It can work with ± 18V maximum power supply voltage or single power supply up to 36V. The is available in DIP-8 and SOIC-8 packages. Features Internally Frequency Compensated Large Signal Voltage Gain: 100dB Typical Gain and Phase Match between Amplifiers Gain Bandwidth Product (at 10kHz): 5.5MHz Pin to Pin Compatible with MC158 Applications Audio AC-3 Decoder System Audio Amplifier SOIC-8 DIP-8 Figure 1. Package Types of 1

2 Pin Configuration M Package (SOIC-8) P Package (DIP-8) OUTPUT V CC OUTPUT V CC INPUT OUTPUT 2 INPUT OUTPUT 2 INPUT INPUT 2- INPUT INPUT 2- V EE 5 INPUT 2+ V EE 5 INPUT 2+ Figure 2. Pin Configuration of (Top View) Functional Block Diagram V CC - Input + Input Output V EE Figure 3. Functional Block Diagram of (Each Amplifier) 2

3 Ordering Information - Circuit Type Package M: SOIC-8 P: DIP-8 E1: Lead Free G1: Green TR: Tape and Reel Blank: Tube Package Temperature Range Part Number Marking ID Packing Type Lead Free Green Lead Free Green M-E1 M-G1 558CM-E1 558CM-G1 Tube SOIC-8-0 to 85 o C MTR-E1 MTR-G1 558CM-E1 558CM-G1 Tape & Reel DIP-8-0 to 85 o C P-E1 P-G1 P-E1 P-G1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Voltage V CC +20 V EE -20 V Input Voltage V I ±15 V Differential Input Voltage V ID ±30 V Operating Junction Temperature T J 150 o C Storage Temperature Range T STG -65 to 150 o C Lead Temperature (Soldering 10s) T L 260 o C Power Dissipation P D SOIC 500 mw DIP 800 mw Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Min Max Unit Supply Voltage ±2 ±18 V Operating Temperature Range o C 3

4 Electrical Characteristics Operating Conditions: V CC =+15V, V EE =-15V, T A =25 o C, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit Input Offset Voltage V IO 1 5 mv Input Offset Current I IO V CM =0V na Input Bias Current I IB V CM =0V na Large Signal Voltage Gain A VD R L =2KΩ, V O =±10V db Supply Voltage Rejection Ratio SVR R S 10KΩ db Supply Current I CC All Amplifiers, No Load ma Input Common Mode Voltage Range V ICM ±12 V Common Mode Rejection Ratio CMRR R S 10KΩ db R L 10KΩ ±12 ±1 Output Voltage Swing V O R L 2KΩ ±10 ±13 V Slew Rate SR I =±10V, R L =2KΩ, C L =100pF, unity gain V Rise Time T I =±20mV, R L =2KΩ, C L =100pF, unity R gain V Overshoot K I =±20mV, R L =2KΩ, C L =100pF, unity OV gain V 1.8 V/μs 0.3 μs 15 % Input Resistance R I 0.5 MΩ Output Resistance R O 5 Ω Unity Gain Bandwidth B Gain=0dB 2.8 MHz Gain Bandwidth Product GBWP V I =±10mV, R L =2KΩ, C L =100pF, f=10khz 5.5 MHz Total Harmonic Distortion Plus Noise THD+N f=1khz, A V=6dB, R L =10KΩ, V O =1V RMS, % Equivalent Input Noise Voltage Density Output Current e N R S =100Ω, f=1khz 10 I SINK V-=1V, V+= 0V, V O =2V 60 I SOURCE V+=1V, V-= 0V, V O =2V nv Hz ma Thermal Resistance (Junction to Case) θ JC DIP-8 55 SOIC-8 81 o C/W

5 Typical Performance Characteristics Open Loop Gain (db) Maximum Swing Voltage (V) V CC =+15V, V EE =-15V, R L =2kΩ, THD+N<5% k 10k 100k 1M 10M Frequency (Hz) k 10k 100k 1M Frequency (Hz) Figure. Open Loop Voltage Gain vs. Frequency Figure 5. Maximum Output Voltage Swing vs. Frequency Output Voltage Swing (V) Positive Voltage Swing Negative Voltage Swing Supply Current (ma) k 10k Resistance Load (Ω) Temperature ( O C) Figure 6. Maximum Output Voltage Swing vs. Load Resistance Figure 7. Supply Current vs. Temperature 5

6 Typical Performance Characteristics (Continued) Input Offset Voltage (mv) Input Bias Current (na) Temperature ( O C) Temperature ( O C) Figure 8. Input Offset Voltage vs. Temperature Figure 9. Input Bias Current vs. Temperature 6

7 Typical Application R1 20K 1% C1 150pF V EE =-12V V IN C2 22μF/ 25V R2 10K 1% C5 1000pF GND R3 3.3K 1% 2 (6) R 6.8K GND 3 (5) - + OUT 8 V CC =+12V GND 1 (7) GND C3 0.1μF C6 0.1μF C 22μF/25V GND R5 10K V OUT Figure 10. Typical Application of in Audio 2nd Order Low Pass Filter (f O =50.6kHz, Q=0.7015, Input impedance=10k, Gain=6dB, Group delay=.8μs) 7

8 Mechanical Dimensions DIP-8 Unit: mm(inch) 0.700(0.028) (0.060) TYP (0.300)TYP (0.16).310(0.170) 3.200(0.126) 3.600(0.12) 3.000(0.118) 3.600(0.12) 0.510(0.020)MIN 0.25(0.010)TYP 0.360(0.01) 0.560(0.022) 0.130(0.005)MIN 2.50(0.100) TYP 8.200(0.323) 9.00(0.370) 0.20(0.008) 0.360(0.01) R0.750(0.030) 6.200(0.2) 6.600(0.260) Φ3.000(0.118) Depth 0.100(0.00) 0.200(0.008) 9.000(0.35) 9.600(0.378) Note: Eject hole, oriented hole and mold mark is optional. 8

9 Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) 7.700(0.185) 5.100(0.201) 1.350(0.053) 1.750(0.069) 0.320(0.013) (0.039) (0.050) TYP 0.100(0.00) 0.300(0.012) R0.150(0.006) 0.675(0.027) 0.725(0.029) D 0 8 D 20: (0.228) 6.200(0.2) 0.800(0.031) φ 0.200(0.008) 3.800(0.150).000(0.157) 0.330(0.013) 0.510(0.020) 0.190(0.007) 0.250(0.010) 0.900(0.035) (0.017) 0.800(0.031) R0.150(0.006) Note: Eject hole, oriented hole and mold mark is optional. 9

10 IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD - Headquarters Semiconductor Manufacturing Limited - Wafer BCD FabSemiconductor Manufacturing Limited BCD - Wafer Semiconductor Fab Manufacturing Limited Shanghai - IC Design SIM-BCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 1600, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Limited Industrial Park, 20021, China 800 Yi Advanced Shan Road, Analog Shanghai Circuits , (Shanghai) China Corporation Tel: 800, , Yi Shan Road, Shanghai Fax: , China Tel: F, Zone B, 900, 191, Yi Fax: Shan Road, Shanghai , China Tel: , Fax: Tel: , Fax: REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIM-BCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Unit A Room SIM-BCD 1203, Skyworth Semiconductor Bldg., Gaoxin Manufacturing Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office Advanced China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited F, 298-1, BCD Rui Semiconductor Guang Road, (Taiwan) Nei-Hu District, Company Taipei, Limited Taiwan F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD Semiconductor Huntwood Ave. Corporation Hayward, CA 95, Huntwood USA Ave. Hayward, Room Tel: E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen , China Tel: Taiwan 2808 CA Tel : 95, U.S.A Tel: Fax: Fax: Fax: Tel: Fax: Tel Fax: : Fax: