600mA LOW DROPOUT LINEAR REGULATOR 600mA ULDO REGULATOR WITH ENABLE. Features. Applications

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Florence French
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1 General Description The is a series of ultra low dropout regulators optimized for low voltage applications where transient response and minimum input voltage are critical. The provides current limit and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within ±1.5%. On-chip thermal shutdown provides protection against any combination of overload and ambient temperatures that would create excessive junction temperatures. The has both fixed and adjustable versions. The 1.3V fixed versions integrate the corresponding resistor divider. The adjustable version can set the output voltage through two external resistors. Features Wide Operating Voltage Ranges: 2.5V to 12V Output Voltage Accuracy: ±1.5% On-chip Thermal Shutdown ESD: Human Body Model 3kV Machine Model 600V Operating Junction Temperature: -40 o C to 125 o C Applications Notebook USB Device Add-on Card DVD Player PC Motherboard The is available in the standard DFN and SOIC-8 packages. DFN SOIC-8 Figure 1. Package Types of 1

2 Pin Configuration DN Package (DFN-3x3-8) M Package (SOIC-8) 1 8 EN NC 1 8 GND 2 7 NC EN 2 7 ADJ/NC 3 6 GND ADJ/NC 4 5 NC Figure 2. Pin Configuration of (Top View) Functional Block Diagram EN 1, 2 (3, 4) 3, 4 (6) 8 (2) Enable RC Compensation OVP 5 (7) ADJ/NC Bandgap Reference V FB Error Amplifier A1 B Thermal Shutdown Current Limit A2 6 (8) GND Connect A1 and A2, disconnect B: Fixed Voltage Version Connect B, disconnect A1 and A2:Adjustable Voltage Version Figure 3. Functional Block Diagram of A (B) A: DFN-3x3-8 B: SOIC-8 2

3 Pin Description Pin Number Pin Name DFN SOIC-8 1, 2 3, 4 Input Voltage Function 3, 4 6 Output Voltage 5 7 ADJ/NC Adjust Voltage/No Connection 6 8 GND Ground 7 1, 5 NC No connection 8 2 EN On/Off control Ordering Information - Circuit Type Package M: SOIC-8 DN: DFN E1: Lead Free G1: Green TR: Tape and Reel Blank: Tube ADJ: Adjustable Output 1.3: Fixed Output 1.3V Package Temperature Range Part Number Marking ID Lead Free Green Lead Free Green Packing Type SOIC-8 DFN to 125 o C -40 to 125 o C M-ADJE1 M-ADJG1 2318M-ADJE1 2318M-ADJG1 Tube M-ADJTRE1 M-ADJTRG1 2318M-ADJE1 2318M-ADJG1 Tape & Reel M-1.3E1 M-1.3G1 2318M-1.3E1 2318M-1.3G1 Tube M-1.3TRE1 M-1.3TRG1 2318M-1.3E1 2318M-1.3G1 Tape & Reel DN-ADJTRE1 DN-ADJTRG1 F9E B9E Tape & Reel DN-1.3TRE1 DN-1.3TRG1 F9B B9B Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. 3

4 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage 15 V Operating Junction Temperature T J 150 o C Storage Temperature Range T STG -65 to 150 o C Lead Temperature (Soldering, 10sec) T LEAD 260 o C Thermal Resistance (Note 2) θ JA SOIC DFN o C/W ESD (Human Body Model) ESD 3000 V ESD (Machine Model) ESD 600 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a function of the maximum junction temperature, T J (max), the junction-to-ambient thermal resistance,θ JA, and the ambient temperature, T A. The maximum allowable power dissipation at any ambient temperature is calculated using: P D (max)=(t J (max) - T A )/θ JA. Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. Recommended Operating Conditions Parameter Symbol Min Max Unit Input Voltage V Enable Voltage V EN 12 V Operating Junction Temperature Range T J o C 4

5 Electrical Characteristics Operating Conditions: 2.5V 12V, C IN =1µF, C OUT =2.2µF, T J, unless otherwise specified. (P Maximum Power Dissipation). Limits appearing in Boldface type apply over the entire junction temperature range for operation of -40 o C to 125 o C. Parameter Symbol Conditions Min Typ Max Unit Reference Voltage V REF I OUT =10mA, - =2V, T J 10mA I OUT 600mA, +2V 12V V Output Voltage I OUT =10mA, =2.5V, T J 10mA I OUT 600mA, 2.5V 12V Maximum Output Current -1.5% -2% 1.5% 2% I OUT (max) - =2V A Line Regulation V RLINE I OUT =10mA, +2V 12V 1 6 mv I OUT =10mA, 2.5V 12V 1 6 mv Load Regulation V RLOAD = +2V, 10mA I OUT 600mA 1 10 mv =2.5V, 10mA I OUT 600mA 1 10 mv Dropout Voltage V DROP ( V REF )=1%, I OUT =600mA 0.35 V Adjust Pin Current I ADJ µa Minimum Load Current I LOAD (min) +2V 12V (ADJ only) ma Quiescent Current I Q = +2V, I OUT =0mA 250 µa RMS Output Noise (% of ) Thermal Shutdown Temperature Thermal Shutdown Hysteresis V NOI T A, 10Hz f 20kHz % 150 V o C 25 o C Enable logic low 0.8 Enable Input Voltage V EN Enable logic high 2.25 Enable Input Current I EN V EN =2.25V 5 15 µa V EN 4 µa Thermal Resistance, (Junction to Case) θ JC DFN SOIC-8 24 V o C/W 5

6 Typical Performance Characteristics =2.8V Figure 4. Output Voltage vs. Output Current (Conditions:, ADJ Short to GND) Figure 5. Output Voltage vs. Output Current (Conditions:,, ) =8V =12V =2.5V =12V Figure 6. Output Voltage vs. Output Current (Conditions:, ADJ Short to GND) Figure 7. Output Voltage vs. Output Current (Conditions:,, ) 6

7 Typical Performance Characteristics (Continued) =2.8V =-40 o C 0.1 =125 o C V 0.8 IN =-40 o C 0.2 =125 o C Figure 8. Output Voltage vs. Output Current (Conditions:, ADJ Short to GND) Figure 9. Output Voltage vs. Output Current (Conditions:,, ) mA 10mA 600mA mA 10mA 600mA Input Voltage (V) Input Voltage (V) Figure 10. Output Voltage vs. Input Voltage (Conditions:, ADJ Short to GND) Figure 11. Output Voltage vs. Input Voltage (Conditions:,, ) 7

8 Typical Performance Characteristics (Continued) =2.8V I OUT =10mA I OUT =10mA Case Temperature ( o C) Case Temperature ( o C) Figure 12. Output Voltage vs. Case Temperature (Conditions:, ADJ Short to GND) Figure 13. Output Voltage vs. Case Temperature (Conditions:,, ) Supply Current (µa) No Load =-40 o C =125 o C Supply Current (µa) No Load =-40 o C =125 o C Input Voltage (V) Input Voltage (V) Figure 14. Supply Voltage vs. Input Voltage (Conditions:, ADJ Short to GND) Figure 15. Supply Voltage vs. Input Voltage (Conditions:,, ) 8

9 Typical Performance Characteristics (Continued) Supply Current (µa) =2.8V No Load Supply Current (µa) No Load Case Temperature ( o C) Case Temperature ( o C) Figure 16. Supply Current vs. Case Temperature (Conditions:, ADJ Short to GND) Figure 17. Supply current vs. Case Temperature (Conditions:,, ) Supply Current (ma) =2.8V =-40 o C =125 o C Supply Current (ma) =-40 o C 2 2 =125 o C Figure 18. Supply Current vs. Output Current (Conditions:, ADJ Short to GND) Figure 19. Supply Current vs. Output Current (Conditions:,, ) 9

10 Typical Performance Characteristics (Continued) Supply Current (ma) =8V =12V Supply Current (ma) =2.5V =12V Figure 20. Supply Current vs. Output Current (Conditions:, ADJ Short to GND) Figure 21. Supply Current vs. Output Current (Conditions:,, ) (50mV/Div) I OUT (100mA/Div) (100mV/Div) I OUT (200mA/Div) Time (200µs/Div) Figure 22. Load Transient Response (Conditions: =2.5V, =1.3V, I OUT =1mA to 300mA, C IN =1µF, C OUT =2.2µF) Time (200µs/Div) Figure 23. Load Transient Response (Conditions: =2.5V, =1.8V, I OUT =1mA to 600mA, C IN =1µF, C OUT =2.2µF) 10

11 Typical Performance Characteristics (Continued) (50mV/Div) (2V/Div) (50mV/Div) (5V/Div) Figure 24. Line Transient Response (Conditions: =2.5V to 5V,, I OUT =10mA, C IN =0µF, C OUT =2.2µF) Figure 25. Line Transient Response (Conditions: =2.5V to 10V,, I OUT =10mA, C IN =0µF, C OUT =2.2µF) PSRR (db) =3 to 4V 10 C IN =1µF, C OUT =2.2µF I LOAD =10mA k 10k 100k Frequency (Hz) PSRR (db) =3 to 4V 10 C IN =1µF, C OUT =2.2µF I LOAD =10mA k 10k 100k Frequency (Hz) Figure 26. PSRR vs. Frequency Figure 27. PSRR vs. Frequency 11

12 Typical Performance Characteristics (Continued) Power Dissipation (W) SOIC-8 C IN =1µF C OUT =2.2µF =3.3V I OUT =10mA Ambient Temperature ( o C) Enable Input Voltage (V) Figure 28. Power Dissipation vs. Ambient Temperature (Conditions:,, ) Figure 29. Output Voltage vs. Enable Input Voltage (Conditions:,, ) 12

13 Typical Applications R1 C IN 1µF + EN GND ADJ/ NC R2 + C OUT 2.2µF Figure 30. Typical Applications of ADJ Version, =0.8*(R1+R2)/R2 =3.3V =1.3V -1.3 C IN 1µF + EN GND ADJ/ NC + C OUT 2.2µF Figure 31. Typical Applications of Fixed 1.3V Version, =1.3V 13

14 Mechanical Dimensions SOIC-8 Unit: mm(inch) (0.185) 5.100(0.201) 1.350(0.053) 1.750(0.069) 0.320(0.013) (0.039) (0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) 0.675(0.027) 0.725(0.029) D 0 8 D 20: (0.228) 6.200(0.244) 0.800(0.031) φ 0.200(0.008) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.510(0.020) 0.190(0.007) 0.250(0.010) 0.900(0.035) (0.017) 0.800(0.031) R0.150(0.006) Note: Eject hole, oriented hole and mold mark is optional. 14

15 Mechanical Dimensions (Continued) DFN-3x3-8 Unit: mm(inch) 2.900(0.114) 3.100(0.122) 0.180(0.007) 0.300(0.012) N (0.026) BSC N (0.015) 0.575(0.023) Pin 1 Dot by Marking 2.900(0.114) 1.400(0.055) 3.100(0.122) 1.600(0.063) 2.200(0.087) 2.400(0.094) PIN #1 IDENTIFICATION N4 N (0.006) 0.253(0.010) 0.700(0.028) 0.800(0.031) 0.000(0.000) 0.050(0.002) 15

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16 IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD - Headquarters Semiconductor Manufacturing Limited - Wafer BCD FabSemiconductor Manufacturing Limited BCD - Wafer Semiconductor Fab Manufacturing Limited Shanghai - IC Design SIM-BCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 1600, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Limited Industrial Park, , China 800 Yi Advanced Shan Road, Analog Shanghai Circuits , (Shanghai) China Corporation Tel: 800, , Yi Shan Road, Shanghai Fax: , China Tel: F, Zone B, 900, 1491, Yi Fax: Shan Road, Shanghai , China Tel: , Fax: Tel: , Fax: REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIM-BCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Unit A Room SIM-BCD 1203, Skyworth Semiconductor Bldg., Gaoxin Manufacturing Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office Advanced China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited 4F, 298-1, BCD Rui Semiconductor Guang Road, (Taiwan) Nei-Hu District, Company Taipei, Limited Taiwan 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD Semiconductor Huntwood Ave. Corporation Hayward, CA 94544, Huntwood USA Ave. Hayward, Room Tel: E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen , China Tel: Taiwan 2808 CA Tel : 94544, U.S.A Tel: Fax: Fax: Fax: Tel: Fax: Tel Fax: : Fax:

LOW DROPOUT LINEAR REGULATOR. Features. Applications

LOW DROPOUT LINEAR REGULATOR. Features. Applications General Description The is a low dropout three-terminal regulator. The has been optimized for low voltage where transient response and minimum input voltage are critical. It provides current limit and