PULSE-WIDTH-MODULATION CONTROL CIRCUITS General Description. Features. Applications
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1 General Description The is a voltage mode pulse width modulation switching regulator control circuit designed primarily for power supply control. The consists of a reference voltage circuit, two error amplifiers, an on-chip adjustable oscillator, a dead-time control (DTC) comparator, a pulse-steering control flip-flop, and an output control circuit. The precision of voltage reference (V REF ) is improved up to ± 1% through trimming and this provides a better output voltage regulation. The provides for pushpull or single-ended output operation, which can be selected through the output control. The difference between AZ494A and AZ494C is that they have 4.95V and 5V reference voltage respectively. The is available in standard packages of DIP-16 and SOIC-16. Features Stable 4.95V/5V Reference Voltage Trimmed to ±1.0% Accuracy Uncommitted Output TR for 200mA Sink or Source Current Single-End or Push-Pull Operation Selected by Output Control Internal Circuitry Prohibits Double Pulse at Either Output Complete PWM Control Circuit with Variable Duty Cycle On-Chip Oscillator with Master or Slave Operation Applications SMPS Back Light Inverter Charger SOIC-16 DIP-16 Figure 1. Package Types of 1
2 Pin Configuration M/P Package (SOIC-16/DIP-16) 1IN IN 1IN IN - FEEDBACK 3 14 REF DTC 4 13 OUTPUT CTRL CT 5 12 RT 6 11 C2 GND 7 10 E2 C1 8 9 E1 Figure 2. Pin Configuration of (Top View) Output Function Control Table Signal for Output Control V I = GND V I = V REF Output Function Single-ended or parallel output Normal push-pull operation Functional Block Diagram OUTPUT CTRL RT CT DTC V Oscillator Dead-Time Control Comparator Pulse-Steering Flip-Flop D CK 13 8 Q Q2 C1 E1 C2 1IN 1IN - 2IN 2IN Error Amplifier 1 Error Amplifier 2 PWM Comparator 0.7mA Reference Regulator E2 REF GND FEEDBACK 3 Figure 3. Functional Block Diagram of 2
3 Ordering Information AZ494 - Circuit Type Reference Voltage A: 4.95V C: 5.0V E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Package M: SOIC-16 P: DIP-16 Package SOIC-16 DIP-16 Temperature Range -40 to 85 o C Part Number Marking ID Tin Lead Lead Free Tin Lead Lead Free Packing Type AZ494AM AZ494AM-E1 AZ494AM AZ494AM-E1 Tube AZ494AMTR AZ494AMTR-E1 AZ494AM AZ494AM-E1 Tape & Reel AZ494CM AZ494CM-E1 AZ494CM AZ494CM-E1 Tube AZ494CMTR AZ494CMTR-E1 AZ494CM AZ494CM-E1 Tape & Reel AZ494AP AZ494AP-E1 AZ494AP AZ494AP-E1 Tube AZ494CP AZ494CP-E1 AZ494CP AZ494CP-E1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. 3
4 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Voltage (Note 2) 40 V Amplifier Input Voltage V I -0.3 to 0.3 V Collector Output Voltage V O 40 V Collector Output Current I O 250 ma Package Thermal Impedance (Note 3) R M Package 73 θja P Package 67 o C/W Lead Temperature 1.6mm from case for 10 seconds 260 o C Storage Temperature Range T STG -65 to 150 o C ESD rating (Machine Model) 200 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings"for extended periods may affect device reliability. Note 2: All voltage values are with respect to the network ground terminal. Note 3: Maximum power dissipation is a function of T J (max), R θja and T A. The maximum allowable power dissipation at any allowable ambient temperature is P D = ( T J (max) - T A )/R θja. Operating at the absolute maximum T J of 150 o C can affect reliability. Recommended Operating Conditions Parameter Symbol Min Typ Max Unit Supply Voltage V Collector Output Voltage V C1, V C V Collector Output Current (Each Transistor) I C1, I C2 200 ma Amplifier Input Voltage V I V Current Into Feedback Terminal I FB 0.3 ma Reference Output Current I REF 10 ma Timing Capacitor C T µf Timing Resistor R T KΩ Oscillator Frequency f osc KHz PWM Input Voltage (Pin 3, 4, 14) V Operating Free-Air Temperature T A o C 4
5 Electrical Characteristics T A = 25 o C, =20V, f=10khz unless otherwise noted. Parameter Symbol Conditions Min Typ Max Unit Reference Section Output Reference Voltage for AZ494A V REF I REF =1mA, T A = -40 to 85 o C V I REF =1mA V Output Reference Voltage I REF =1mA V for AZ494C V REF I REF =1mA, T A = -40 to 85 o C V Line Regulation R LINE = 7V to 36V 2 25 mv Load Regulation R LOAD I REF =1mA to 10mA 1 15 mv Short-Circuit Output Current I SC V REF = 0V ma Oscillator Section Oscillator Frequency f OSC Frequency Change with Temperature f / T C T =0.001µF, R T =30KΩ, 40 C T =0.01µF, R T =12KΩ C T =0.01µF, R T =12KΩ, T A = -40 to 85 o C C T =0.01µF, R T =12KΩ, T A = -40 to 85 o C KHz 1 % Dead-Time Control Section Input Bias Current I BIAS =15V, V4= 0 to 5.25V µa Maximum Duty Cycle D(MAX) =15V, V4= 0V, Pin 13= V REF 45 % Zero Duty Cycle Input Threshold Voltage V ITH Maximum Duty Cycle 0 V Error-Amplifier Section Input Offset Voltage V IO V3 = 2.5V 2 10 mv Input Offset Current I IO V3 = 2.5V na Input Bias Current I BIAS V3 = 2.5V µa Common-Mode Input Voltage Range V CM =7V to 36V V Open-Loop Voltage Gain G VO V O =0.5V to 3.5V db Unity-Gain Bandwidth BW 650 KHz Common-Mode Rejection Ratio CMRR db V Output Sink Current (Feedback) I ID = -15mV to -5V, SINK V3 = 0.7V ma V Output Source Current (Feedback) I ID =15mV to 5V SOURCE V3 = 3.5V 2 ma
6 Electrical Characteristics (Continued) Parameter Symbol Conditions Min Typ Max Unit PWM Comparator Section Input Threshold Voltage V ITH Zero duty cycle V Input Sink Current I SINK V3 = 0.7V ma Output Section Output Saturation Voltage Common Emitter Emitter Follower V CE (SAT) (SAT) V E = 0V, I C =200mA = 15V, I E = -200mA Collector Off-State Current I C (OFF) V CE = 36V, =36V µa Emitter Off-State Current I E (OFF) = V C = 36V, V E = µa Total Device Supply Current I CC Pin 6 = V REF, =15V 6 10 ma Output Switching Characteristics Common Emitter Rise Time t R Common Collector ns Common Emitter Fall Time t F Common Collector ns V 6
7 Parametr Measurement information = 20V Test Inputs KΩ uF DTC 12 FEEDBACK RT CT 1IN 1IN- 2IN 2IN- C1 E1 C2 E Ω 4W 150Ω 4W Output 1 Output 2 50KΩ 13 OUTPUT CTRL GND 7 REF 14 Test Circuit Voltage at C1 0V Voltage at C2 0V Voltage at CT DTC Threshold Voltage 0V FEEDBACK Threshold Voltage 0.7V Duty Cycle 0% MAX Voltage Waveforms 0% Figure 4. Operational Test Circuit and Waveforms 7
8 Parametr Measurement information (Continued) V I Amplifier Under Test FEEDBACK V ref Other Amplifier Figure 5. Error Amplifier Characteristics 20V 68Ω 4W t f t r Each Output Circuit Output 90% 90% C L = 15pF (See Note A) 10% 10% Note A: C L includes probe and jig capacitance. Figure 6. Common-Emitter Configuration 20V Each Output Circuit 90% 90% C L = 15pF (See Note A) 68Ω 4W Output 10% t r 10% t f Note A: C L includes probe and jig capacitance. Figure 7. Emitter-Follower Configuration 8
9 Typical Performance Characteristics 100k =20V T A =25 O C f - Oscillator Frequency (Hz) 10k 0.1µF 0.01µF 0.001µF 1k 1k 10k 100k 1M RT - Timing Resistance (Ω) Figure 8. Oscillator Frequency vs. RT and CT 100 Voltage Gain (db) =20V V O =3V T A =25 o C k 10k 100k 1M Frequency (Hz) Figure 9. Error Amplifier Small-Signal Voltage Gain vs. Frequency 9
10 Typical Applications (V I =10V to 40V) V I () KSA1010 1mH 2A (V O =5V, I O =1A) V O µ 1M k 50µ 50V C2 C1 FEED BACK AZ494A 1IN- REF 2IN- 1IN k 5.1k 50µ 10V 2IN 16 DTC 4 GND 7 E1 9 OUTPUT CONTROL 13 E2 10 RT 6 CT µ 10V 47k 0.001µ GND 0.1 V I (-) Figure 10. Pulse Width Modulated Step-Down Converter 10
11 Mechanical Dimensions SOIC-16 Unit: mm(inch) B 1.350(0.053) 1.750(0.069) 1.250(0.049) 1.650(0.065) 0.330(0.013) 0.510(0.020) (0.010) A 20: (0.016) 1.270(0.050) 1.270(0.050) BSC 9.800(0.386) (0.402) 0 8 R0.200(0.008) R0.200(0.008) 0.170(0.007) 0.250(0.010) 5.800(0.228) 6.240(0.246) 3.800(0.150) 4.040(0.159) B 20: (0.002) 0.250(0.010) 0.200(0.008) 0.250(0.010) C-C 50: A 0.400(0.016) 45 C C 0.200(0.008) S φ1.000(0.039) Depth 0.200(0.008) 1.000(0.039) Note: Eject hole, oriented hole and mold mark is optional. 11
12 Mechanical Dimensions (Continued) DIP-16 Unit: mm(inch) Note: Eject hole, oriented hole and mold mark is optional. 12
13 BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD - Headquarters Semiconductor Manufacturing Limited - Wafer BCD FabSemiconductor Manufacturing Limited BCD - Wafer Semiconductor Fab Manufacturing Limited Shanghai - IC Design SIM-BCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 1600, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Limited Industrial Park, , China 800 Yi Advanced Shan Road, Analog Shanghai Circuits , (Shanghai) China Corporation Tel: 800, , Yi Shan Road, Shanghai Fax: , China Tel: F, Zone B, 900, 1491, Yi Fax: Shan Road, Shanghai , China Tel: , Fax: Tel: , Fax: REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIM-BCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Unit A Room SIM-BCD 1203, Skyworth Semiconductor Bldg., Gaoxin Manufacturing Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office Advanced China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited 4F, 298-1, BCD Rui Semiconductor Guang Road, (Taiwan) Nei-Hu District, Company Taipei, Limited Taiwan 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD Semiconductor Huntwood Ave. Corporation Hayward, CA 94544, Huntwood USA Ave. Hayward, Room Tel: E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen , China Tel: Taiwan 2808 CA Tel : 94544, U.S.A Tel: Fax: Fax: Fax: Tel: Fax: Tel Fax: : Fax:
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