DUAL LOW NOISE OPERATIONAL AMPLIFIERS General Description. Features. Applications

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Diana Malone
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General Description Features The consists of two low noise, high performance operational amplifiers.

where gain and phase matched channels are mandatory.

gain and high bandwidth. The can operate under dual power supply voltage up to ±18V or single power supply up to 36V.

1 General Description Features The consists of two low noise, high performance operational amplifiers. It is specially suitable for applications in differential-in, differential-out as well as in industrial measurement tools and applications where gain and phase matched channels are mandatory. The IC features monolithic silicon chip, internal frequency compensation, low noise, low distortion, wide operating voltage range, high gain and high bandwidth. The can operate under dual power supply voltage up to ±18V or single power supply up to 36V. Operating voltage: ±2V ~ ±18V Large DC voltage gain: 110 db Low input noise voltage: 1µV RMS Wide gain bandwidth product: 7 MHz Slew rate: 3V/µs Package outline: DIP8, SOIC8 Applications Audio AC-3 decoded system Audio amplifier AC/DC converter SOIC-8 DIP-8 Figure 1. Package Types of 1

2 Pin Configuration SOIC-8/DIP-8 OUTPUT 1 INPUT 1- INPUT 1+ V EE OUTPUT 2 6 INPUT 2-5 INPUT 2+ Top View Figure 2. Pin Configuration of Functional Block Diagram -INPUT +INPUT OUTPUT V EE Figure 3. Representative Schematic Diagram of (Each Amplifier) 2

3 Ordering Information Package Temperature Range Part Number Marking ID Packing Type SOIC-8-40 o C to 85 o M 4558AM Tube/Tape/Reel C DIP-8 P P Tube AZ 4558A Y Circuit Type Package M: SOIC-8 P: DIP-8 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage + 20 V EE - 20 V Differential Input Voltage V ID ± 30 V Input Voltage V IC ± 15 V DIP 800 Power Dissipation P D SOIC 800 mw Operating Temperature Range T OP -40 to 85 o C Storage Temperature Range T STG -60 to 150 o C ESD (Human Body Model) 3000 V ESD (Machine Model) 400 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Min Max Unit Supply Voltage ± 2 ± 18 V 3

4 Electrical Characteristics Operating Conditions: = +15V, V EE = - 15V, T A = 25 o C unless otherwise specified. Parameter Conditions Min Typ Max Unit Input Offset Voltage R S 10ΚΩ mv Input Bias Current na Input Offset Current na Supply Current ma Large Signal Voltage Gain R L 2ΚΩ, V O = ± 10V db Common Mode Rejection Ratio R S 10ΚΩ db Power Supply Rejection Ratio R S 10ΚΩ db Output Voltage Swing R L 2KΩ ±10 ±13 - R L 10KΩ ±12 ±14 - V Output Sink Current V-=1V, V+ =0V, V O =2V 70 ma Output Source Current V+ =1V, V-=0V, V O =2V 45 ma Slew Rate V / µs Equivalent Input Noise Voltage RIAA, Rs=1KΩ, 30KHz LPF µv RMS Gain Bandwidth Product f = 10KHz MHz 4

5 Typical Performance Characteristics Open Loop Voltage Gain (db) =15V, V EE =-15V R L =2KΩ,T A =25 o C Output Voltage Swing (V) =15V,V EE =-15V, R L =2KΩ, T A =25 o C k 10k 100k 1M 10M Frequency (Hz) Frequency (Hz) Figure 4. Open Loop Voltage Gain vs. Frequency Figure 5. Maximum Output Voltage Swing vs. Frequency Output Voltage Swing (V) 28 =15V,V EE =-15V 26 T A =25 o C Load Resistance (KΩ) Equivalent Input Noise Voltage (nv/(hz) 0.5 ) =15V, V EE =-15V R S =50Ω,T A =25 o C Frequency (Hz) Figure 6. Maximum Output Voltage Swing vs. Load Resistance Figure 7. Equivalent Input Noise Voltage vs. Frequency 5

6 Typical Performance Characteristics (Continued) Offset Voltage (mv) =15V V EE =-15V Bias Current (na) =15V V EE =-15V Ambient Temperature ( o C) Ambient Temperature ( o C) Figure 8. Input Offset Voltage vs. Temperature Figure 9. Input Bias Current vs. Temperature Typical Applications BOOST-BASS-CUT R1 11K R2 100K R3 11K V i C1 0.05µF C2 0.05µF R4 11K - C µF + 1/2 V O R5 3.6K R6 500K BOOST-TREBLE-CUT R7 3.6K Figure 10. Tone Control 6

7 Typical Applications (Continued) V O 10µF 6.2K 20K D K 20K 20K 20K D1 10K V IN Figure 11. AC/DC Converter 7

8 Mechanical Dimensions DIP - 8 Unit:mm ± ± ± ± φ3 0.15± MIN 10.0MAX 0.28±0.07 R ±0.50 8

9 Mechanical Dimensions (Continued) SOIC - 8 Unit:mm 7 4.9± ± ± ± ±0.025 D D 20:1 6.00± φ ±0.10 R ±4 R ± ±2 9

10 USA: 860 Hillview Court, Suite 160, Milpitas, CA 95035, USA Tel: , Fax: China: 8th Floor, Zone B, 900 Yi Shan Road,Shanghai , China Tel: , Fax: Taiwan: Room 2210, 22nd Fl, 333, Keelung Road, Sec. 1, TaiPei 110, Taiwan Tel: , Fax: IMPORTANT NOTICE Advanced Analog Circuits Corporation reserves the right to make changes without further notice to any products or specifications herein. Advanced Analog Circuits does not assume any responsibility for use of any its products for any particular purpose, nor does Advanced Analog Circuits assume any liability arising out of the application or use of any its products or circuits. Advanced Analog Circuits Corporation does not convey any license under its patent rights or other rights nor the rights of others.

DUAL BIPOLAR OPERATIONAL AMPLIFIERS General Description. Features. Applications

DUAL BIPOLAR OPERATIONAL AMPLIFIERS General Description. Features. Applications General Description The consists of two high performance operational amplifiers. The IC features high gain, low equivalent input noise voltage, high input resistance, excellent channel separation, wide