LOW POWER DUAL OPERATIONAL AMPLIFIERS General Description. Features. Applications

Size: px

Start display at page:

Download "LOW POWER DUAL OPERATIONAL AMPLIFIERS General Description. Features. Applications"

Richard Norris
5 years ago
Views:

1 General Description Features The consist of two independent, high gain and internally frequency compensated operational amplifiers, they are specifically designed to operate from a single power supply. Operation from split power supply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltages. Typical applications include transducer amplifiers, DC gain blocks and most conventional operational amplifier circuits. The series are compatible with industry standard 38. AS38A has more stringent input offset voltage than AS38. The AS38 is available in DIP8, SOIC8, TSSOP8 and MSOP8 packages, AS38A is available in DIP8 and SOIC8 packages. Internally Frequency Compensated for Unity Gain Large Voltage Gain: 1dB (Typical) Low Input Bias Current: 2nA (Typical) Low Input Offset Voltage: 2mV (Typical) Low Supply Current:.mA (Typical) Wide Power Supply Voltage: Single Supply: 3V to 36V Dual Supplies: ± 1.V to ± 18V Input Common Mode Voltage Range Includes Ground Large Output Voltage Swing: V to 1.V Applications Battery Charger Cordless Telephone Switching Power Supply SOIC8 DIP8 TSSOP8 MSOP8 Figure 1. Package Types of 1

2 Pin Configuration M/G/MM Package (SOIC8/TSSOP8/MSOP8) P Package (DIP8) OUTPUT OUTPUT INPUT OUTPUT 2 INPUT OUTPUT 2 INPUT INPUT 2 INPUT INPUT 2 GND 4 INPUT 2 GND 4 INPUT 2 Figure 2. Pin Configuration of (Top View) Functional Block Diagram 6µA 4µA 1µA Q Q6 Q1 Q2 Q3 Q4 Cc Q7 INPUTS Rsc OUTPUT Q8 Q9 Q1 Q11 Q12 µa Q13 Figure 3. Functional Block Diagram of (Each Amplifier) 2

3 Ordering Information Circuit Type Blank: AS38 A: AS38A AS38 E1: Lead Free G1: Green TR: Tape and Reel Blank: Tube Package M: SOIC8 P: DIP8 G: TSSOP8 MM: MSOP8 Package SOIC8 DIP8 TSSOP8 MSOP8 Temperature Range 4 to 8 o C 4 to 8 o C 4 to 8 o C 4 to 8 o C Part Number Marking ID Lead Free Green Lead Free Green Packing Type AS38ME1 AS38MG1 AS38ME1 AS38MG1 Tube AS38MTRE1 AS38MTRG1 AS38ME1 AS38MG1 Tape & Reel AS38AME1 AS38AMG1 AS38AME1 AS38AMG1 Tube AS38AMTRE1 AS38AMTRG1 AS38AME1 AS38AMG1 Tape & Reel AS38PE1 AS38PG1 AS38PE1 AS38PG1 Tube AS38APE1 AS38APG1 AS38APE1 AS38APG1 Tube AS38GE1 AS38GG1 EG3A GG3A Tube AS38GTRE1 AS38GTRG1 EG3A GG3A Tape & Reel AS38MME1 AS38MMG1 AS38MME1 AS38MMG1 Tube AS38MMTRE1 AS38MMTRG1 AS38MME1 AS38MMG1 Tape & Reel BCD Semiconductor's Pbfree products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. 3

4 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage 4 V Differential Input Voltage V ID 4 V Input Voltage V IC.3 to 4 V DIP8 83 Power Dissipation (T A =2 o C) P D SOIC8 TSSOP8 mw MSOP8 47 Operating Junction Temperature T J 1 o C Storage Temperature Range T STG 6 to 1 o C Lead Temperature (Soldering, 1 Seconds) T LEAD 26 o C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage 3 36 V Ambient Operating Temperature Range T A 4 8 o C 4

5 Electrical Characteristics Data Sheet Limits in standard typeface are for T A =2 o C, bold typeface applies over 4 o C to 8 o C (Note 2), =V, GND=V, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Input Offset Voltage V IO V O =1.4V, R S =Ω, =V to 3V Average Temperature Coefficient of Input Offset Voltage AS38 AS38A V IO / T T A =4 to 8 o C 7 µv/ o C Input Bias Current I BIAS I IN or I IN, V CM =V Input Offset Current I IO I IN I IN, V CM =V Input Common Mode Voltage Range (Note 3) V IR =3V 1. V Supply Current I T A =4 to 8 o C, R L =, =3V.7 2 CC T A =4 to 8 o C, R L =, =V. 1.2 ma Large Signal Voltage Gain G V =1V, V O =1V to 11V, R L 2kΩ db Common Mode Rejection 6 7 CMRR DC, V Ratio CM =V to ( 1.)V 6 db Power Supply Rejection 7 1 PSRR V Ratio CC =V to 3V 6 db Channel Separation CS f=1khz to 2kHz 12 db Output Current Output Short Circuit Current to Ground Output Voltage Swing Thermal Resistance (Junction to Case) Source I SOURCE V IN =1V, V IN =V, =1V, V O =2V Sink I SINK V IN =V, V IN =1V, =1V, V O =2V V IN =V,V IN =1V, =1V, V O =.2V 12 µa I SC =1V 4 6 ma V OH V OL =3V, R L =2kΩ =3V, R L =1kΩ =V, R L = 1kΩ θ JC DIP8 3 o C/W SOIC8 78 Note 2: Limits over the full temperature are guaranteed by design, but not tested in production. mv na na ma ma V mv

6 Electrical Characteristics (Continued) Note 3: The input commonmode voltage of either input signal voltage should not be allowed to go negatively by more than.3v (at 2 o C). The upper end of the commonmode voltage range is 1.V (at 2 o C), but either or both inputs can go to 36V without damages, independent of the magnitude of the. Typical Performance Characteristics Input Voltage (V DC ) 1 NEGATIVE POSITIVE Input Current (na) Power Supply Voltage (V DC ) Temperature ( o C) Figure 4. Input Voltage Range Figure. Input Current Supply Current (ma) Voltage Gain (db) R L =2KΩ R L =2KΩ Supply Voltage (V) Power Supply Voltage (V) Figure 6. Supply Current Figure 7. Voltage Gain 6

Typical Performance Characteristics (Continued) Voltage Gain (db) 12 11 1 9 8 7 6

2 1 3 2 1 4 8 12 16 2 24 28 32 36 4 Time (µs) Figure 8.

Voltage Follower Pulse Response 8 2 7 Output Voltage (mv) 6 4 3 2 1 Output Swing

7 Typical Performance Characteristics (Continued) Voltage Gain (db) k 1k 1k 1M Frequency (Hz) Input Output Voltage (V) Voltage (V) Time (µs) Figure 8. Open Loop Frequency Response Figure 9. Voltage Follower Pulse Response Output Voltage (mv) Output Swing (V) Time (µs) 1k 1k 1k 1M Frequency (Hz) Figure 1. Voltage Follower Pulse Response (Small Signal) Figure 11. Large Signal Frequency Response 7

8 Typical Performance Characteristics (Continued) 8 1 Output Voltage Referenced to Vcc (V) Output Voltage (V) 1.1 =V =1V Output Source Current (ma).1 1E Output Sink Current (ma) Figure 12. Output Characteristics: Current Sourcing Figure 13. Output Characteristics: Current Sinking Output Current (ma) Temperature ( o C) Figure 14. Current Limiting 8

9 Typical Application R1 Opto Isolator R6 AC Line SMPS 1/2 AS38/A GND Battery Pack R7 R3 R4 R Current Sense R2 AZ431 1/2 AS38/A GND R8 Figure 1. Battery Charger R1 91K R1 1k V IN() R2 1K R3 91K 1/2 AS38/A V O V 1 V 2 V 3 R2 1k R3 1k R 1k 1/2 AS38/A R6 1k V O R L V 4 R4 1k Figure 16. Power Amplifier Figure 17. DC Summing Amplifier 9

10 Typical Application (Continued) R1 1k R2 1M C1.1µF 1/2 AS38/A C O V O 2V R3 2K 2V R1 2K R2 C IN AC C2 1µF R3 1M R4 1k R 1k R B 6.2k A V =1R2/R1 R L 1k A V =11 (As shown) R4 3K 1/2 AS38/A I1 1mA I2 Figure 18. AC Coupled NonInverting Amplifier Figure 19. Fixed Current Sources R1 1M C1.1µF.1µF R2 1k V IN R1 16K R2 16k 1/2 AS38/A V O C2.1µF 1/2 AS38/A R3 1k V O R3 1k R4 1k R 1k V O f O f O =1kHz Q=1 A V =2 R4 1k Figure 2. Pulse Generator Figure 21. DC Coupled LowPass Active Filter 1

11 Mechanical Dimensions DIP8 Unit: mm(inch).7(.28) (.6) TYP (.3)TYP 3.71(.146) 4.31(.17) 4 3.2(.126) 3.6(.142) 4 3.(.118) 3.6(.142).1(.2)MIN.24(.1)TYP.36(.14).6(.22).13(.)MIN 2.4(.1) TYP 8.2(.323) 9.4(.37).24(.8).36(.14) R.7(.3) 6.2(.244) 6.6(.26) Φ3.(.118) Depth.1(.4).2(.8) 9.(.34) 9.4(.37) Note: Eject hole, oriented hole and mold mark is optional. 11

12 Mechanical Dimensions (Continued) SOIC8 Unit: mm(inch) 7 4.7(.18).1(.21) 1.3(.3) 1.7(.69).32(.13) 8 1.(.39) (.) TYP.1(.4).3(.12) R.1(.6).67(.27).72(.29) D 8 D 2:1 8.8(.228) 6.2(.244) φ.8(.31).2(.8) 3.8(.1) 4.(.17).33(.13).1(.2).19(.7).2(.1).9(.3) 1.4(.17).8(.31) R.1(.6) Note: Eject hole, oriented hole and mold mark is optional. 12

13 Mechanical Dimensions (Continued) TSSOP8 Unit: mm(inch) 2.9(.114) 3.1(.122) SEE DETAIL A.(.2).1(.6).8(.31) 1.(.41) 1.2(.47) MAX.9(.4).2(.8) 12 TOP & BOTTOM R.9(.4) 4.3(.169) 4.(.177) 6.4(.22) TYP R.9(.4) GAGE PLANE 8.4(.16) SEATING PLANE.4(.18).7(.3).6(.26) TYP 1.9(.77) TYP.19(.7).3(.12).2(.1) TYP DETAIL A 1.(.39) REF Note: Eject hole, oriented hole and mold mark is optional. 13

14 Mechanical Dimensions MSOP8 Unit: mm(inch).3(.12)typ.6(.26)typ.1(.6)typ 4.7(.18).1(.21).41(.16).6(.26) 2.9(.114) 3.1(.122) 6.76(.3).97(.38) 2.9(.114) 3.1(.122).(.).2(.8).8(.31) 1.2(.47) ` Note: Eject hole, oriented hole and mold mark is optional. 14

http://www.bcdsemi.com IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein.

15 IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Headquarters Semiconductor Manufacturing Limited Wafer BCD FabSemiconductor Manufacturing Limited BCD Wafer Semiconductor Fab Manufacturing Limited Shanghai IC Design SIMBCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 16, Zi SIMBCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Sciencebased Limited Industrial Park, 2241, China 8 Yi Advanced Shan Road, Analog Shanghai Circuits 2233, (Shanghai) China Corporation Tel: 8, , Yi Shan Road, Shanghai Fax: , China Tel: F, Zone B, 9, 1491, Yi Fax: Shan Road, Shanghai 82233, China Tel: , Fax: Tel: , Fax: REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIMBCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Unit A Room SIMBCD 123, Skyworth Semiconductor Bldg., Gaoxin Manufacturing Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office Advanced China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited 4F, 2981, BCD Rui Semiconductor Guang Road, (Taiwan) NeiHu District, Company Taipei, Limited Taiwan 4F, 2981, Rui Guang Road, NeiHu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD 392 Semiconductor Huntwood Ave. Corporation Hayward, 392 CA 9444, Huntwood USA Ave. Hayward, Room Tel: E, F, Noble 791 Center, No.16, 3rd Fuzhong Road, Futian District, Shenzhen 1826, China Tel: Taiwan 288 CA Tel : 9444, U.S.A Tel: Fax: Fax: Fax: Tel: Fax: Tel Fax: : Fax:

LOW POWER QUAD OPERATIONAL AMPLIFIERS AS324/324A. Features

LOW POWER QUAD OPERATIONAL AMPLIFIERS AS324/324A. Features General Description The AS324/324A consist of four independent, high gain and internally frequency compensated operational amplifiers. They are specifically designed to operate from a single power supply.