CURRENT MODE PWM CONTROLLER General Description. Features

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1 General Description The AP3842C/3C/4C/5C are high performance fixed frequency current-mode PWM controller series. These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external components. They feature under-voltage lockout (UVLO) circuit with low start-up current, trimmed oscillator for precise duty cycle control, current sense comparator providing maximum current limiting and a totem pole output stage for increasing output current. In addition, these ICs also feature accurate protection against over-temperature, over-current and maximal output power. The AP3842C and AP3844C have UVLO thresholds of 16V(on) and 10V(off); The corresponding thresholds for AP3843C and AP3845C are 8.4 V(on) and 7.6V(off). The AP3842C and AP3843C can operate approaching 100% duty cycle; AP3844C and AP3845C can operate from zero to 50% duty cycle. These ICs are available in SOIC-8 and DIP-8 packages. Features Low Start-up Current: 50μA Robust V REF Line/Load Regulation Low Line Regulation : 4mV Low Load Regulation : 4mV High Stability of Reference Voltage over a Full Temperature Range: 0.2mV/ o C Operating Frequency up to 500kHz High PWM Frequency Stability over a Full Temperature Range: 2.5% High PWM Frequency Stability under a Full Supply Voltage Range: 0.2% Accurate Over-temperature Protection with Hysteresis UVLO with Hysteresis Applications Off-line Converter DC-DC Converter Voltage Adapter CRT Monitor Power Supply Desktop Power Supply DVD/STB Power Supply Option 1 Option 2 SOIC-8 DIP-8 Figure 1. Package Types of AP3842C/3C/4C/5C 1

2 Pin Configuration M Package (SOIC-8) P Package (DIP-8) COMP 1 8 V REF COMP 1 8 V REF V FB 2 7 V FB 2 7 I SENSE 3 6 OUTPUT I SENSE 3 6 OUTPUT R T /C T 4 5 GND R T /C T 4 5 GND Figure 2. Pin Configuration of AP3842C/3C/4C/5C (Top View) Pin Description Pin Number Pin Name Function 1 COMP This pin is the Error Amplifier output and is made available for loop compensation. 2 V FB The inverting input of the Error Amplifier. It is normally connected to the switching power supply output through a resistor divider. 3 I SENSE A voltage proportional to inductor current is connected to this input. The PWM uses this information to terminate the output switch conduction. 4 R T /C T The Oscillator frequency and maximum output duty cycle are programmed by connecting resistor R T to V REF and capacitor C T to ground. Operation to 500 khz is possible. 5 GND The combined control circuitry and power ground. 6 OUTPUT This output directly drives the gate of a power MOSFET. Peak currents up to 1.0 A are sourced and sunk by this pin. 7 The positive supply of the control IC. 8 V REF This is the reference output. It provides charging current for capacitor C T through resistor R T. 2

3 Functional Block Diagram 7 GND 5 34V UVLO S/R 5V REF 8 V REF 2.50V INTERNAL BIAS R T /C T 4 OSC VREF GOOD LOGIC T 6 OUTPUT OVER TEMP PROTECT (Note) V FB COMP I SENSE ERROR AMP 2R R 1V S R CURRENT SENSE COMPARATOR PWN LATCH Note: Toggle flip-flop used for 3844C/45C only Figure 3. Functional Block Diagram of AP3842C/3C/4C/5C 3

4 Ordering Information - Circuit Type 2: AP3842C 3: AP3843C 4: AP3844C 5: AP3845C E1: Lead Free G1: Green TR: Tape and Reel Blank: Tube Package M: SOIC-8 P: DIP-8 Package Temperature Range Part Number Marking ID Packing Type Lead Free Green Lead Free Green AP3842/3/4/5CM-E1 AP3842/3/4/5CM-G1 3842/3/4/5CM-E1 3842/3/4/5CM-G1 Tube SOIC-8-40 to 85 o C AP3842/3/4/5CMTR-E1 AP3842/3/4/5CMTR-G1 3842/3/4/5CM-E1 3842/3/4/5CM-G1 Tape & Reel DIP-8 AP3842/3/4/5CP-E1 AP3842/3/4/5CP-G1 AP3842/3/4/5CP-E1 AP3842/3/4/5CP-G1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. 4

5 Absolute Maximum Ratings (Note 1, 2) Parameter Symbol Value Unit Supply Voltage 30 V Output Current I O ± 1 A Analog Inputs V(ANA) -0.3 to 6.3 V Error Amp Output Sink Current I SINK (E.A) 10 ma Power Dissipation at T A < 25 o C (DIP-8) P D (Note 3) 1000 mw Power Dissipation at T A <25 o C (SOIC-8) P D (Note 3) 460 mw Junction Operating Temperature T J -40 to 150 o C θ DIP Thermal Resistance (Junction to Ambient) JA o C/W SOIC o C/W Storage Temperature Range T STG -65 to 150 o C Lead Temperature (Soldering, 10sec) T LEAD +300 o C ESD (Machine Model) 250 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: All voltages are with respect to pin 5 and all currents are positive into specified terminal. Note 3: Board thickness 1.6mm, board dimension 90mm x 90mm. Recommended Operating Conditions Parameter Symbol Min Max Unit Oscillation Frequency f 500 KHz Ambient Temperature T A o C 5

6 Electrical Characteristics ( =15V, R T =10kΩ C T =3.3nF, T A =25 o C, unless otherwise specified.) Parameter Symbol Conditions Min Typ Max Unit REFERENCE SECTION Reference Output Voltage V REF TA =25 o C, I REF =1mA V Total Output Variation Line, Load, Temp V Line Regulation ΔV REF 12V 25V 4 15 mv Load Regulation ΔV REF 1mA I REF 20mA 4 15 mv Short Circuit Output Current I SC TA =25 o C ma Temperature Stability (Note 6) 0.3 mv/ o C OSCILLATOR SECTION Oscillation Frequency f T A =25 o C KHz Oscillator Amplitude V OSC Pin 4, peak to peak (Note 6) 1.7 V Temperature Stability (Note 6) 2.5 % Voltage Stability 12V 25V % Discharge Current Vpin 4 =2V(Note 7) ma ERROR AMPLIFIER SECTION Input Voltage V I Vpin 1=2.5V V Output Sink Current I SINK Vpin1=1.1V 5 8 ma Output Source Current I SOURCE Vpin1=5V ma High Output Voltage V OH RL=15kΩ to GND 5 7 V Low Output Voltage V OL RL=15kΩ to pin V Voltage Gain 2V V O 4V db Power Supply Rejection Ratio PSRR 12V 25V db CURRENT SENSE SECTION Maximum Input Signal V I (MAX) Vpin1=5V(Note 4) V Gain GV (Note 4, 5) V/V Power Supply Rejection Ratio PSRR 12V 25V (Note 4, 6) 70 db Delay to Output Vpin3 = 0 to 2V (Note 6) ns Input Bias Current I BIAS μa OUTPUT SECTION Low Output Voltage High Output Voltage V OL I SINK = 20mA V I SINK = 200mA V V OH I SOURCE = 20mA V I SOURCE = 200mA V Rise Time t R TA =25 o C, C L =1nF (Note 6) ns Fall Time t F TA =25 o C, C L =1nF (Note 6) ns 6

7 Electrical Characteristics (Continued) Parameter Symbol Conditions Min Typ Max Unit UNDER -VOLTAGE LOCKOUT SECTION Start Threshold V TH (ST) AP3842C/AP3844C V AP3843C/AP3845C V Min. Operation Voltage V OPR AP3842C/AP3844C V (After Turn On) (Min.) AP3843C/AP3845C V PWM SECTION Max. Duty Cycle D(Max.) AP3842C/AP3843C % D(Max.) AP3844C/AP3845C % Min. Duty Cycle D(Min.) 0 % TOTAL STANDBY CURRENT SECTION Start-up Current I ST AP3842C/AP3844C, =14V μa AP3843C/AP3845C, =6.5V Operating Supply Current I CC (OPR) Vpin3=Vpin2=0V 8 12 ma Zener Voltage V Z I CC =25mA V OVER-TEMPERATURE PROTECT SECTION Shutdown Temperature T SHUT (Note 6) 155 o C Temperature Hysteresis T HYS (Note 6) 25 o C Note 4: Parameters are tested at trip point of latch with Vpin2 = 0. Note 5: Here gain is defined as: ΔVPin 1 A=, 0 Vpin3 0.8V ΔVPin 3 Note 6: These parameters, although guaranteed, are not 100% tested in production. Note 7: This parameter is measured with RT=10kΩ to V REF, it contributes 0.3mA of current to the measured value. So the total current flowing into the CT pin will be 0.3mA higher than the measured value approximately. V REF 4.7k 1k ERROR AMP ADJUST 4.7k 2N k 5k I SENSE ADJUST R T V FB I SENSE V REF COMP 2 3 OUTPUT 4 R T /C T GND 5 0.1μF A 0.1μF 1K 1W OUTPUT C T Figure 4. Basic Test Circuit GND 7

8 ELectrical Characteristics (Continued) Figure 4 is the basic test circuit for. In testing, the high peak currents associated with capacitive loads necessitate careful grounding techniques. Timing and bypass capacitors should be connected close to pin 5 in a single point ground. The transistor and 5k potentiometer are used to sample the oscillator waveform and apply an adjustable ramp to pin 3. Typical Performance Characteristics Figure 5. Oscillator Dead Time vs. Timing Capacitor Figure 6. Timing Resistor vs. Frequency =15V, I O =1mA =15V, T A =25 o C Reference Voltage (V) Saturation Voltage (V) Ambient Temperature ( o C) Output Sink Current (ma) Figure 7. Reference Voltage vs. Ambient Temperature Figure 8. Output Saturation Characteristics 8

9 Typical Performance Characteristics (Continued) Voltage Gain (db) =15V, T A =25 o C Start-up Current (μa) AP3843C/45C, =6.5V AP3842C/44C, =14V k 10k 100k 1M Frequency (Hz) Ambient Temperature ( o C) Figure 9. Error Amplifier Open-Loop Frequency Response Figure 10. Start-up Current vs. Ambient Temperature Start-up Current (μa) AP3843C/45C AP3842C/44C Supply Voltage (V) Figure 11. Start-up Current vs. Supply Voltage 9

10 Typical Application J1 AC 90 to 265V NTC Bridge Diode 1N4007*4 R2 1M/ 0.25W C1 47μ R C14 100μ/400V C2 0.01μ 600V D1 Byv26e R3 39k 2W T R19 10 C15 2.2n D3 8TQ100 + L3 10μ C9 2200μ C μ + C11 1μ R20 2K Z2 SA12A + D2 1N4001 J2 12V/5A R C5 220p R14 130k R13 15k 7 V cc CC 2 V FB 1 COMP 5 GND R V 8 REF R T /C T 4 OUTPUT 6 I 3 SENSE U1 AP3842C/3C/4C/5C Z1 1N5819 C15 100p R5 10k R6 20 R7 1k C7 680p C3 0.1μ C4 3.3n R9 7.5k Q1 IRF830 U2 PC817 R /1W C6 2200p/600V C8 0.22μ U3 AZ431 R R16 8.2k W1 1k R17 2k R18 3.9k Figure 12. Typical Application of AP3842C/3C/4C/5C 10

11 Mechanical Dimensions SOIC-8 Unit: mm(inch) (0.185) 5.100(0.201) 1.350(0.053) 1.750(0.069) 0.320(0. 013) TYP (0. 039) TYP Option (0. 050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) 3.800(0.150) 4.000(0.157) 0.675(0.027) 0.725(0.029) D 0 8 D 20: (0.228) 6.200(0.244) 8 Option (0.012) 0.510(0.020) 0.150(0. 006) 0.250(0. 010) 0.900(0. 035) TYP (0. 017) 0.800(0. 031) R0.150(0.006) Option (0.014) TYP Note: Eject hole, oriented hole and mold mark is optional. 11

12 Mechanical Dimensions (Continued) DIP-8 Unit: mm(inch) 0.700(0.028) (0.060) TYP (0.300)TYP (0.146) 4.310(0.170) (0.126) 3.600(0.142) (0.118) 3.600(0.142) 0.510(0.020)MIN 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 0.130(0.005)MIN 2.540(0.100) TYP 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) R0.750(0.030) 6.200(0.244) 6.600(0.260) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.600(0.378) Note: Eject hole, oriented hole and mold mark is optional. 12

13 Mounting Pad Layout SOIC-8 Unit: mm(inch) Grid placement courtyard G Z Y E X Dimensions Z (mm)/(inch) G (mm)/(inch) X (mm)/(inch) Y (mm)/(inch) E (mm)/(inch) Value 6.900/ / / / /

14 BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any IMPORTANT NOTICE particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use other rights nor the rights of others. MAIN SITE - of Headquarters any its products or circuits. BCD Semiconductor Manufacturing - Wafer Limited Fab does not convey any license under its patent rights or BCD other (Shanghai) rights Micro-electronics nor the rights Limited of others. Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, , P. R.C. 800 Yishan Road, Shanghai , China Tel: , Fax: Tel: , Fax: MAIN SITE BCD REGIONAL - Headquarters Semiconductor SALES Manufacturing OFFICE Limited - Wafer BCD FabSemiconductor Manufacturing Limited Shenzhen BCD - Wafer Semiconductor Fab Office Manufacturing Limited Taiwan Shanghai Office - IC Design SIM-BCD (Taipei) Group Semiconductor Manufacturing Co., Ltd. Shanghai No. 1600, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Co., Limited Industrial Ltd., Shenzhen Park, , Office China BCD 800 Semiconductor Yi Advanced Shan Road, Analog (Taiwan) Shanghai Circuits Company , (Shanghai) China Limited Corporation Unit Tel: 800, , A Yi Room Shan Road, 1203,Skyworth Shanghai Fax: Bldg., , Gaoxin ChinaAve.1.S., Nanshan District 3F, No.17, Tel: F, Lane Zone 171, B, 900, Sec. 1491, 2, Yi Fax: Jiu-Zong Shan Road, Rd., Shanghai Nei-Hu 0008Dist., , Taipei(114), China Taiwan, R.O.C Shenzhen Tel: , 1491, China Fax: Tel: Tel: , Fax: Tel: REGIONAL , SALES OFFICE Fax: Fax: / REGIONAL Shenzhen OfficeSALES OFFICE Taiwan Office USA Office Taiwan Shenzhen Shanghai Office SIM-BCD Office (Hsinchu) Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Shanghai Unit A Semiconductor Room SIM-BCD 1203, Skyworth Semiconductor (Taiwan) Bldg., Company Gaoxin Manufacturing Limited Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office 8F, Advanced China No.176, Analog Sec. 2, Gong-Dao Circuits (Shanghai) 5th Road, Corporation East District Shenzhen Office USA BCD Office Taiwan Semiconductor Office (Taiwan) Company Limited Korea OfficeUSA BCD Office Semiconductor Corp. BCD 4F, Semiconductor 298-1, BCD Rui Semiconductor Guang Corp. Road, (Taiwan) Nei-Hu District, Company Taipei, BCD Limited Semiconductor BCD Semiconductor Huntwood Limited Korea Ave. Corporation Hayward, office Taiwan Kato 4F, Road, 298-1, Fremont, Rui Guang CA Road, 94538, Nei-Hu USA District, Room Taipei, , CA Digital-Empire 94544, Huntwood USA Ave. II, 486 Hayward, Sin-dong, HsinChu Room Tel: E, City 5F, Noble 300, Taiwan, 7951 Center, No.1006, R.O.C 3rd Fuzhong Road, Futian District, Shenzhen , China Tel: Tel: Taiwan 2808 Yeongtong-Gu, CA Tel Suwon-city, : 94544, U.S.A Gyeonggi-do, Korea Tel: Fax: , Fax: Fax: Fax: Fax: Tel: Fax: Tel: Tel Fax: : Fax:

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