SINGLE PHASE HALL EFFECT LATCH General Description. Features. Applications

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Barry Garrison
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1 General Description The is an integrated Hall sensor with H- bridged output driver designed for brushless DC motor applications. The device includes an on-chip Hall sensor for magnetic sensing, an amplifier that amplifies the Hall voltage, a comparator to provide switching hysteresis for noise rejection, a bi-directional drivers for sinking and driving large current load. It also includes an internal bandgap regulator to provide temperature compensated bias for internal circuits and allows a wide operating supply voltage range. Placing the device in a variable magnetic field, if the magnetic flux density is larger than threshold B OP, the DO is turned to sink and DOB is turned to drive. This output state is held until the magnetic flux density reverses and falls below B RP, then causes DO to be turned to drive and DOB turned to sink. The is available in TO-9 (SIP-L) package. Features On-Chip Hall Sensor Operating Voltage: 3.5V to 18V H-Bridge Output Drivers for Single Coil Internal Bandgap Regulator for Temperature Compensation Low Output Switching Current Noise Operating Temperature: - o C to 85 o C Low Profile TO-9 (SIP-L) Package ESD Rating: 6V (Human Body Model) Suitable for PWM Power Supply Control Speed Applications Single-coil Brushless DC Motor Single-coil Brushless DC Fan TO-9 Figure 1. Package Type of Oct. 9 Rev. 1. 1

2 Pin Configuration Z Package (TO-9) 3 1 GND DOB DO Figure. Pin Configuration of (Front View) Pin Description Pin Number Pin Name Function 1 Supply voltage DO Output 1 3 DOB Output GND Ground Oct. 9 Rev. 1.

3 Functional Block Diagram 1 Regulator DO Hall Sensor Amplifier Schmitt Trigger Pre- Driver 3 DOB GND Figure 3. Functional Block Diagram of Ordering Information - Circuit Type Package Z: TO-9 (SIP-L) G1: Green Magnetic Characteristics A: 5 to 7 Gauss B: 1 Gauss Package Temperature Range Part Number Marking ID Packing Type TO-9 - to 85 o Z-AG1 77AZ-G1 Bulk C Z-BG1 77AZ-G1 Bulk BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Oct. 9 Rev. 1. 3

4 Absolute Maximum Ratings (Note 1) ( =5 o C) Parameter Symbol Value Unit Supply Voltage V Magnetic Flux Density B Unlimited Gauss Output Current Continuous 5 ma Hold I O 3 ma Peak (start up) 6 ma Power Dissipation P D 55 mw Thermal Resistance Die to atmosphere θ JA 7 o C/W Die to package case θ JC 9 o C/W Storage Temperature T STG -5 to 15 o C ESD (Machine Model) 6 V ESD (Human Body Model) 6 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect device reliability. Recommended Operating Conditions ( =5 o C) Parameter Symbol Min Max Unit Supply Voltage V Frequency (PWM Power) f.1 5 khz Ambient Temperature - 85 o C Oct. 9 Rev. 1.

5 Electrical Characteristics ( =5 o C, =1V, unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Output Saturation Voltage (Sink) Output Saturation Voltage (Drive) =1V, I O =ma.5.65 V V SAT =1V, I O =ma - - V Supply Current I CC =V, Output Open ma Output Rise Time tr R L =8Ω, C L =pf.5 1. µs Output Fall Time tf R L =8Ω, C L =pf.5 1. µs Magnetic Characteristics ( =5 o C) Parameter Symbol Grade Min Typ Max Unit Operating Point B OP A 5 7 Gauss B 1 Releasing Point B RP A -7-5 Gauss B -1 Hysteresis B HYS 7 Gauss Test Circuit S DO DOB GND Marking Side 1 3 C1.1µF 8Ω N Oct. 9 Rev. 1. 5

6 Magnetic Hysteresis Characteristics DO Output (V) 8 6 DOB Output (V) Magnetism (GS) Magnetism (GS) Figure. DO Output vs. Magnetism Figure 5. DOB Output vs. Magnetism Typical Performance Characteristics I CC (ma) I CC (ma) 1 8 =5 o C =1V (V) ( O C) Figure 6. Supply Current vs. Supply Voltage Figure 7. Supply Current vs. Ambient Temperature Oct. 9 Rev. 1. 6

7 Typical Performance Characteristics (Continued) B OP /B RP /B HYS (GS) - - B OP B RP B HYS B OP /B RP /B HYS (GS) - - B OP B RP B HYS -6-8 =5 o C -6-8 =1V (V) ( O C) Figure 8. B OP /B RP /B HYS vs. Supply Voltage Figure 9. B OP /B RP /B HYS vs. Ambient Temperature V SAT (V) 8 6 V SAT _Up V SAT _Down V SAT (mv) Driver Sink =5 O C 1 I O =ma I O (ma) ( o C) Figure 1. V SAT vs. I O Figure 11. V SAT vs. Ambient Temperature Oct. 9 Rev. 1. 7

8 Typical Performance Characteristics (Continued) 8 6 P D (mw) ( o C) Figure 1. P D vs. Ambient Temperature Typical Application DO DOB GND D1 1 3 C1.1µF COIL Figure 13. Typical Application Circuit Oct. 9 Rev. 1. 8

9 Mechanical Dimensions TO-9 Unit: mm(inch) 1.5(.59) 1.7(.67).5(.).7(.8) 3.78(.19).8(.161) 5 TYP.7(.8).9(.35) 1.7(.68).(.8) 1.1(.3) 1.(.55) Package Sensor Location (For Hall IC).98(.196) 5.8(.8).38(.15).55(.).36(.1).51(.) 3.5(.136) 3.75(.18).36(.1).5(.) 1.(.55) 15.3(.6) 3.71(.16) 3.91(.15) 1.7(.5) TYP Oct. 9 Rev. 1. 9

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10 IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD - Headquarters Semiconductor Manufacturing Limited - Wafer BCD FabSemiconductor Manufacturing Limited BCD - Wafer Semiconductor Fab Manufacturing Limited Shanghai - IC Design SIM-BCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 16, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Limited Industrial Park, 1, China 8 Yi Advanced Shan Road, Analog Shanghai Circuits 33, (Shanghai) China Corporation Tel: 8, , Yi Shan Road, Shanghai Fax: , China Tel: F, Zone B, 9, 191, Yi Fax: Shan Road, Shanghai 833, China Tel: , Fax: Tel: , Fax: REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIM-BCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Unit A Room SIM-BCD 13, Skyworth Semiconductor Bldg., Gaoxin Manufacturing Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office Advanced China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited F, 98-1, BCD Rui Semiconductor Guang Road, (Taiwan) Nei-Hu District, Company Taipei, Limited Taiwan F, 98-1, Rui Guang Road, Nei-Hu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD 39 Semiconductor Huntwood Ave. Corporation Hayward, 39 CA 95, Huntwood USA Ave. Hayward, Room Tel: E, 5F, Noble 7951 Center, No.16, 3rd Fuzhong Road, Futian District, Shenzhen 5186, China Tel: Taiwan 88 CA Tel : 95, U.S.A Tel: Fax: Fax: Fax: Tel: Fax: Tel Fax: : Fax:

BIPOLAR HALL-EFFECT POSITION SENSORS

BIPOLAR HALL-EFFECT POSITION SENSORS General Description The is an integrated Hall-effect latched sensor designed for electronic commutation of brushless DC motor applications. The device includes an on-chip Hall voltage generator for magnetic