Advance Datasheet. General Description. Features. Applications. High-side Power Distribution Switch with Enable
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1 General Description The is an integrated high-side power switch that consists of TTL compatible enables input, a charge pump, and N-Channel MOSFET. The switch s low RDS (ON), 120mΩ, meets USB voltage drop requirements. It includes soft-start to limit inrush current, over-current protection with fold-back, and thermal shutdown to avoid switch failure during hot plug-in. Under voltage lockout (UVLO) function is used to ensure the device remain off unless there is a valid input voltage present. And no reverse current when power off, with shutdown pull-low resistor to discharge the output capacitor when EN is disable. The is available in standard package of SOT Features Low MOSFET on Resistance: =5.0V Compliant to USB Specifications Operating Voltage Range: 2.7V to 5.5V Low Supply Current: 35μA (Typ.) Low Shutdown Current: <1μA Current Limit with Fold-back: 2A Under-voltage Lockout Soft Start-up Over-current Protection Over Temperature Protection Load Short Protection with Fold-back No Reverse Current when Power off Pass System ESD: IEC ± 16KV (Air Discharge) and ± 8KV (Contact Discharge) on USB Connector Applications USB Power Management USB Bus/Self Powered Hubs Hot-plug Power Supplies Battery-charger Circuits Notebooks, Motherboard PCs SOT-23-5 Figure 1. Package Type of 1
2 Pin Configuration K Package (SOT-23-5) Figure 2. Pin Configuration of (Top View) Pin Descriptions Pin No. Name Descriptions 1 VOUT Switch Output Voltage 2 GND Ground 3 EN Chip Enable Control Input, Active High 4, 5 VIN Supply Input Pin 2
3 Functional Block Diagram EN 3 4, 5 VIN Clock Gate Control Band Gap Reference Over Current Limiting CMP Current Sense 1 VOUT Shutdown Signal UVLO Thermal Sense GND 2 Figure 3. Functional Block Diagram of 3
4 Ordering Information - Circuit Type G1: Green Package K: SOT-23-5 TR: Tape & Reel Package Temperature Range Part Number Marking ID Packing Type SOT to 85 C KTR-G1 G4E Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. 4
5 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage 6.0 V Operating Junction Temperature Range T J 150 ºC Storage Temperature Range T STG -65 to 150 ºC Lead Temperature (Soldering,10 Seconds) T LEAD 260 ºC Thermal Resistance (Junction to Ambient) θ JA 235 ºC/W ESD (Machine Model) 200 V ESD (Human Body Model) 2000 V Note 1: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage V Ambient Operation Temperature Range C 5
6 Electrical Characteristics ( =5.0V, C IN =4.7μF, C OUT =4.7μF, Typical =25 C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Input Voltage Range V Switch On Resistance R DS(ON) =5V, =0.5A mω Current Limit I LIMIT =4.0V A Supply Current I SUPPLY =5V, R LOAD Open μa Fold-back Short Current I SHORT =0V 1.5 A Shutdown Supply Current I SHUTDOWN =0V, Shutdown Mode μa Output Leakage Current I LEAKAGE =0V, =0V μa Enable High Voltage H Enable Logic High V Enable Low Voltage L Enable Logic Low V Enable Pin Input Current I EN Force 0V to 5.0V at EN Pin μa Under Voltage Lockout Threshold Voltage V UVLO Increasing from 0V V Under Voltage Hysteresis V UVLOHY 0.2 V Reverse Current I REVERSE =0V, > μa Shutdown Pull Low Resistance R DISCHARGE is disable Ω Output Turn-on Time Thermal Shutdown Temperature t ON From Enable Active to 90% of Output, R L =10Ω T OTSD ms o C Thermal Shutdown Hysteresis T HYOTSD 20 Thermal Resistance (Junction to Case) θ JC 70 ºC/W 6
7 Typical Performance Characteristics Supply Current (μa) = =-40 o C =25 o C =85 o C Input Voltage (V) Current Limit (A) 3.0 V 2.8 IN =5V Temperature ( o C) Figure 4. Supply Current vs. Input Voltage Figure 5. Current Limit vs. Temperature Enable Input Threshold (V) 2.4 =5V Rising Falling Temperature ( o C) Enable Input Threshold (V) Input Voltage (V) =25 o C Rising Falling Figure 6. Enable Input Threshold vs. Temperature Figure 7. Enable Input Threshold vs. Input Voltage 7
8 Typical Performance Characteristics (Continued) UVLO Threshold (V) Rising Falling Output Voltage (V) UVLO No Load Rising Falling Temperature ( o C) Input Voltage (V) Figure 8. UVLO Threshold Voltage vs. Temperature Figure 9. UVLO Function Switch-on Resistance (mω) =-40 o C =25 o C =85 o C Input Voltage (V) =1A Switch-on Resistance (mω) =1A =3V =4V =5V Temperature ( o C) Figure 10. Switch-on Resistance vs. Input Voltage Figure 11. Switch-on Resistance vs. Temperature 8
9 Typical Performance Characteristics (Continued) Output Short to GND Current (A) =25 O C Output Short to GND Current (A) =5V =5V Input Voltage (V) Temperature ( O C) Figure 12. Output Short to GND Current vs. Input Voltage Figure 13. Output Short to GND Current vs. Temperature Output Voltage (V) Output Current (A) =5V =5V =25 O C Time 1ms/div Figure 14. Output Voltage vs. Output Current Figure 15. Switch Turn-on and Rise Time ( =3.3V, C OUT =4.7μF, No Load) 9
10 Typical Performance Characteristics (Continued) 500mA /div Time 1ms/div Time 1ms/div Figure 16. Switch Turn-on and Rise Time Figure 17. Switch Turn-on and Rise Time ( =5.0V, C OUT =4.7μF, No Load) ( =3.3V, C OUT =4.7μF, R L =10Ω) 500mA /div 500mA /div Time 1ms/div Time 1ms/div Figure 18. Switch Turn-on and Rise Time Figure 19. Switch Turn-on and Rise Time ( =5.0V, C OUT =4.7μF, R L =10Ω) ( =3.3V, C OUT =100μF, R L =10Ω) 10
11 Typical Performance Characteristics (Continued) 500mA /div Time 1ms/div Time 1ms/div Figure 20. Switch Turn-on and Rise Time Figure 21. Switch Turn-off and Fall Time ( =5.0V, C OUT =100μF, R L =10Ω) ( =3.3V, C OUT =4.7μF, No Load) Time 1ms/div Time 10ms/div Figure 22. Switch Turn-off and Fall Time Figure 23. Switch Turn-off and Fall Time ( =5.0V, C OUT =4.7μF, No Load) ( =3.3V, C OUT =100μF, No Load) 11
12 Typical Performance Characteristics (Continued) 500mA /div Time 10ms/div Time 500µs/div Figure 24. Switch Turn-off and Fall Time Figure 25. Switch Turn-off and Fall Time ( =5.0V, C OUT =100μF, No Load) ( =3.3V, C OUT =100μF, R L =10Ω) 2V/div 500mA /div 1A/div Time 500µs/div Time 100μs/div Figure 26. Switch Turn-off and Fall Time Figure 27. Resistance Load Inrush Response ( =5.0V, C OUT =100μF, R L =10Ω) (C OUT =4.7μF, R L =1.65Ω) 12
13 Typical Performance Characteristics (Continued) 2V/div 1A/div 1A/div Time 200μs/div Time 100ms/div Figure 28. Short-circuit Current, Device Enable into Short ( =5.0V, C OUT =4.7μF) Figure 29. Thermal Shutdown Response ( =5.0V, C OUT =4.7μF, R L =1.65Ω) 13
14 Typical Application Note 2: 4.7μF input capacitor is enough in most application cases. If the PCB trace of power rail to is long, larger input capacitor is necessary. Figure 30. Typical Application 14
15 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 2.820(0.111) 3.100(0.122) 0.100(0.004) 0.200(0.008) 2.650(0.104) 3.000(0.118) 1.500(0.059) 1.700(0.067) 0.300(0.012) 0.600(0.024) 0.200(0.008) 0.700(0.028) REF 0.950(0.037) TYP 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.500(0.020) (0.057) MAX 0.000(0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) 15
16 Mounting Pad Layout SOT-23-5 E2 G Z E1 Y X Z G X Y E1 E2 Dimensions (mm)/(inch) (mm)/(inch) (mm)/(inch) (mm)/(inch) (mm)/(inch) (mm)/(inch) Value 3.600/ / / / / /
17 IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any IMPORTANT NOTICE particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use other rights nor the rights of others. MAIN SITE - of Headquarters any its products or circuits. BCD Semiconductor Manufacturing - Wafer Limited Fab does not convey any license under its patent rights or BCD other (Shanghai) rights Micro-electronics nor the rights Limited of others. Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, , P. R.C. 800 Yishan Road, Shanghai , China Tel: , Fax: Tel: , Fax: MAIN SITE BCD REGIONAL - Headquarters Semiconductor SALES Manufacturing OFFICE Limited - Wafer BCD FabSemiconductor Manufacturing Limited Shenzhen BCD - Wafer Semiconductor Fab Office Manufacturing Limited Taiwan Shanghai Office - IC Design SIM-BCD (Taipei) Group Semiconductor Manufacturing Co., Ltd. Shanghai No. 1600, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Co., Limited Industrial Ltd., Shenzhen Park, , Office China BCD 800 Semiconductor Yi Advanced Shan Road, Analog (Taiwan) Shanghai Circuits Company , (Shanghai) China Limited Corporation Unit Tel: 800, , A Yi Room Shan Road, 1203,Skyworth Shanghai Fax: Bldg., , Gaoxin ChinaAve.1.S., Nanshan District 3F, No.17, Tel: F, Lane Zone 171, B, 900, Sec. 1491, 2, Yi Fax: Jiu-Zong Shan Road, Rd., Shanghai Nei-Hu 0008Dist., , Taipei(114), China Taiwan, R.O.C Shenzhen Tel: , 1491, China Fax: Tel: Tel: , Fax: Tel: REGIONAL , SALES OFFICE Fax: Fax: / REGIONAL Shenzhen OfficeSALES OFFICE Taiwan Office USA Office Taiwan Shenzhen Shanghai Office SIM-BCD Office (Hsinchu) Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Shanghai Unit A Semiconductor Room SIM-BCD 1203, Skyworth Semiconductor (Taiwan) Bldg., Company Gaoxin Manufacturing Limited Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office 8F, Advanced China No.176, Analog Sec. 2, Gong-Dao Circuits (Shanghai) 5th Road, Corporation East District Shenzhen Office USA BCD Office Taiwan Semiconductor Office (Taiwan) Company Limited Korea OfficeUSA BCD Office Semiconductor Corp. BCD 4F, Semiconductor 298-1, BCD Rui Semiconductor Guang Corp. Road, (Taiwan) Nei-Hu District, Company Taipei, BCD Limited Semiconductor BCD Semiconductor Huntwood Limited Korea Ave. Corporation Hayward, office Taiwan Kato 4F, Road, 298-1, Fremont, Rui Guang CA Road, 94538, Nei-Hu USA District, Room Taipei, , CA Digital-Empire 94544, Huntwood USA Ave. II, 486 Hayward, Sin-dong, HsinChu Room Tel: E, City 5F, Noble 300, Taiwan, 7951 Center, No.1006, R.O.C 3rd Fuzhong Road, Futian District, Shenzhen , China Tel: Tel: Taiwan 2808 Yeongtong-Gu, CA Tel Suwon-city, : 94544, U.S.A Gyeonggi-do, Korea Tel: Fax: , Fax: Fax: Fax: Fax: Tel: Fax: Tel: Tel Fax: : Fax:
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