LOW POWER QUAD OPERATIONAL AMPLIFIERS AS324/324A. Features
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- Donald Lester
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1 General Description The AS324/324A consist of four independent, high gain and internally frequency compensated operational amplifiers. They are specifically designed to operate from a single power supply. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage. Typical applications include transducer amplifiers, DC gain blocks and most conventional operational amplifier circuits. The AS324/324A series are compatible with industry standard 324. AS324A has more stringent input offset voltage than AS324. The AS324 is available in SOIC14, DIP14 and TSSOP14 packages, AS324A is available in SOIC14 package. Features Internally Frequency Compensated for Unity Gain Large Voltage Gain: 1dB (Typical) Low Input Bias Current: 2nA (Typical) Low Input Offset Voltage: 2mV (Typical) Low Supply Current:.mA (Typical) Wide Power Supply Voltage Range: Single Supply: 3V to 36V Dual Supplies: 1.V to 18V Input Common Mode Voltage Range Includes Ground Large Output Voltage Swing: V to 1.V Power Drain Suitable for Battery Operation Application Battery Charger Cordless Telephone Switching Power Supply DIP14 SOIC14 TSSOP14 Figure 1. Package Types of AS324/324A 1
2 Pin Configuration M P/G Package (SOIC14/DIP14/TSSOP14) OUTPUT OUTPUT 4 INPUT INPUT 4 INPUT INPUT GND INPUT 2 1 INPUT 3 INPUT INPUT 3 OUTPUT OUTPUT 3 Functional Block Diagram Figure 2. Pin Configuration of AS324/324A (Top View) 6µA 4µA 1µA Q Q6 Q1 Q2 Q3 Q4 Cc Q7 INPUTS Rsc OUTPUT Q8 Q9 Q1 Q11 Q12 µa Q13 Figure 3. Functional Block Diagram of AS324/324A (Each Amplifier) Ordering Information AS324 Circuit Type Blank: AS324 A: AS324A E1: Lead Free G1: Green TR: Tape and Reel Blank: Tube Package M: SOIC14 P: DIP14 G: TSSOP14 2
3 Ordering Information (Continued) Temperature Part Number Marking ID Package Packing Type Range Lead Free Green Lead Free Green AS324ME1 AS324MG1 AS324ME1 AS324MG1 Tube AS324MTRE1 AS324MTRG1 AS324ME1 AS324MG1 Tape & Reel SOIC14 AS324AME1 AS324AMG1 AS324AME1 AS324AMG1 Tube 4 to 8 o C AS324AMTRE1 AS324AMTRG1 AS324AME1 AS324AMG1 Tape & Reel DIP14 AS324PE1 AS324PG1 AS324PE1 AS324PG1 Tube AS324GTRE1 AS324GTRG1 EGS324 GGS324 Tape & Reel TSSOP14 AS324GE1 AS324GG1 EGS324 GGS324 Tube BCD Semiconductor's Pbfree products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Voltage 4 V Differential Input Voltage V ID 4 V Total Power Dissipation (T A =2 o C) P D Input Voltage V IN.3 to 4 V SOIC14 8 mw DIP TSSOP14 71 Operating Junction Temperature T J 1 o C Storage Temperature Range T STG 6 to 1 o C Lead Temperature (Soldering, 1 Seconds) T LEAD 26 o C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage 3 36 V Ambient Operating Temperature Range T A 4 8 o C 3
4 Electrical Characteristics Limits in standard typeface are for T A =2 o C, bold typeface applies over T A =4 o C to 8 o C (Note 2), =V, GND=V, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Input Offset Voltage V IO V O =1.4V, R S = Ω, =V to 3V Average Temperature Coefficient of Input Offset Voltage AS324 AS324A V IO / T T A =4 to 8 o C 7 µv/ o C 3 Input Offset Current I IO I IN I IN, V CM =V na 1 Input Bias Current I BIAS I IN or I IN, V CM =V 2 1 na 2 Input Common Mode Voltage V Range (Note 3) IR =3V 1. V Supply Current I CC T A =4 to 8 o C, R L = =3V 1. 3 =V ma Large Signal Voltage Gain G V =1V, R L 2kΩ, V O =1V to 11V db Common Mode Rejection 6 7 CMRR DC, V Ratio CM = to ( 1.)V 6 db Power Supply Rejection 7 1 PSRR V Ratio CC = to 3V 6 db Channel Separation CS f=1khz to 2kHz 12 db Output Current Source I SOURCE V IN =1V, V IN =V, =1V, V O =2V Sink I SINK V IN =V, V IN =1V, =1V, V O =2V V IN =V, V IN =1V, =1V, V O =.2V 12 µa mv mv ma ma Output Short Circuit Current to Ground I SC =1V 4 6 ma Output Voltage Swing V OH =3V, R L =2kΩ =3V, R L =1kΩ V V OL =V, R L = 1kΩ 2 3 mv Note 2: Limits over the full temperature are guaranteed by design, but not tested in production. 4
5 Electrical Characteristics (Continued) Note 3: The input commonmode voltage of either input signal voltage should not be allowed to go negatively by more than.3v (at 2 o C). The upper end of the commonmode voltage range is 1.V (at 2 o C), but either or both inputs can go to 36V without damages, independent of the magnitude of the. Typical Performance Characteristics Input Voltage (V DC ) 1 NEGATIVE POSITIVE Input Current (na) Power Supply Voltage (V DC ) Temperature ( o C) Figure 4. Input Voltage Range Figure. Input Current Supply Current (ma) Voltage Gain (db) R L =2KΩ R L =2KΩ Supply Voltage (V) Power Supply Voltage (V) Figure 6. Supply Current Figure 7. Voltage Gain
6 Typical Performance Characteristics (Continued) Voltage Gain (db) Input Output Voltage (V) Voltage (V) k 1k 1k 1M Frequency (Hz) Figure 8. Open Loop Frequency Response Time (µs) Figure 9. Voltage Follower Pulse Response Output Voltage (mv) Output Swing (V) Time (µs) 1k 1k 1k 1M Frequency (Hz) Figure 1. Voltage Follower Pulse Response (Small Signal) Figure 11. Large Signal Frequency Response 6
7 Typical Performance Characteristics (Continued) 8 1 Output Voltage Referenced to (V) /2 I O Vo Output Voltage (V) 1.1 =V =1V /2 I O Vo 1E Output Source Current (ma).1 1E Output Sink Current (ma) Figure 12. Output Characteristics Current Sourcing Figure 13. Output Characteristics Current Sinking Output Current (ma) Temperature ( o C) Figure 14. Current Limiting 7
8 Typical Applications R1 Opto Isolator R6 AC Line SMPS 1/4 AS324/A GND Battery Pack R7 R3 R4 R Current Sense R2 AZ431 1/4 AS324/A GND R8 Figure 1. Battery Charger R1 1k R1 91k V 1 V 2 V 3 R2 1k R3 1k R 1k 1/4 AS324/A R6 1k V O V IN() R2 1k R3 91k 1/4 AS324/A V O R L V 4 R4 1k Figure 16. DC Summing Amplifier Figure 17. Power Amplifier 8
9 Typical Applications (Continued) R1 1k R2 1M 2V R3 2k 2V R1 2k R2 C1.1µF 1/4 AS324/A C O V O R4 3k 1/4 AS324/A I1 1mA I2 C IN AC C2 1µF R3 1M R4 1k R 1k R B 6.2k A V =1R2/R1 R L 1k A V =11 (As shown) Figure 18. Fixed Current Sources Figure 19. AC Coupled NonInverting Amplifier R1 1M C1.1µF.1µF R2 1k 1/4 AS324/A V O V IN R1 16k R2 16k C2.1µF 1/4 AS324/A R3 1k V O R3 1k R4 1k R 1k V O f O f O =1kHz Q=1 A V =2 R4 1k Figure 2. Pulse Generator Figure 21. DC Coupled LowPass RC Active Filter 9
10 Mechanical Dimension DIP14 Unit: mm(inch) (.6) TYP 1.6(.63) 1.8(.71) 1.7(.28) 7.62(.3)TYP (.1).36(.14).6(.22).1(.2)MIN 2.4(.1)TYP 3.(.118) 3.6(.142).13(.)MIN 1.6(.63) 1.8(.71).24(.8).36(.14) 8.2(.323) 9.4(.37) 3.(.118) Depth.1(.4).2(.8) 6.2(.244) 6.6(.26) R1.(.39) 18.8(.74) 19.2(.76) 1
11 Mechanical Dimension (Continued) SOIC14 Unit: mm(inch).7(.28) 7.1(.4).2(.1).28(.11) 4.48(.19) (.337) 8.7(.344) 1.3(.3) 1.7(.69) 8 3.8(.1) 4.(.17) 9..19(.7).2(.1).33(.13).1(.2) 1.27(.) A 1.(.39).8(.228) 6.2(.244).2(.1).2(.8)MIN R.2(.8) R.2(.8) 1 2:1 1.3(.1) 2.(.79) Depth.6(.2).1(.4).(.2).6(.24).2(.1) 11
12 Mechanical Dimension (Continued) TSSOP14 Unit: mm(inch).34(.13).4(.21).(.2).1(.6) SEE DETAIL A.9(.3) 1.(.41) 1.2(.47) MAX 4.86(.191).6(.199).1(.4).19(.7) TOP&BOTTOM 1 14 R.9(.4).2(.8) 6.2(.244) 6.6(.26) # 1 PIN.6(.26) INDEX φ.9(.37) 1.(.41) DEP.1(.4) 4.3(.169) 4.(.177).2(.8).28(.11).2(.1) R.9(.4).4(.18).7(.3) 1.(.39) REF DETAIL A 8 12
13 IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Headquarters Semiconductor Manufacturing Limited Wafer BCD FabSemiconductor Manufacturing Limited BCD Wafer Semiconductor Fab Manufacturing Limited Shanghai IC Design SIMBCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 16, Zi SIMBCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Sciencebased Limited Industrial Park, 2241, China 8 Yi Advanced Shan Road, Analog Shanghai Circuits 2233, (Shanghai) China Corporation Tel: 8, , Yi Shan Road, Shanghai Fax: , China Tel: F, Zone B, 9, 1491, Yi Fax: Shan Road, Shanghai 82233, China Tel: , Fax: Tel: , Fax: REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIMBCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Room E, F, SIMBCD Noble Center, Semiconductor No.16, Manufacturing 3rd Fuzhong Road, Co., Ltd. Futian Shenzhen District, Office Shenzhen, Advanced 1826, China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited 4F, 2981, BCD Rui Semiconductor Guang Road, (Taiwan) NeiHu District, Company Taipei, Limited Taiwan 4F, 2981, Rui Guang Road, NeiHu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD 392 Semiconductor Huntwood Ave. Corporation Hayward, 392 CA 9444, Huntwood USA Ave. Hayward, Room Tel: E, F, Noble 791 Center, No.16, 3rd Fuzhong Road, Futian District, Shenzhen 1826, China Tel: Taiwan 288 CA Tel : 9444, U.S.A Tel: Fax: Fax: Fax: Tel: Fax: Tel Fax: : Fax:
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