Dual 4-channel Analog Multiplexer/Demultiplexer. Features

Transcription

1 General Description The is high-speed si-gate CMOS device. The is dual 4-channel analog multiplexers or demultiplexers with common select logic. Each multiplexer has four independent inputs/outputs (pins ny0 to ny3) and a common input/output (pin nz). The common channel select logics include two digital select inputs (pins S0 and S1) and an active LOW enable input (pin E ). When pin E =LOW, one of the four switches is selected (Low-impedance On-state) with pins S0 and S1. When pin E =HIGH, all switches are in the high-impedance Off-state, independent of pins S0 and S1. and GND are the supply voltage pins for the digital control inputs (pins S0, S1 and E ). The to GND ranges are 3.0V to 10V. The analog inputs/outputs (pins ny0 to ny3 and nz) can swing between as a positive limit and V EE as a negative limit. -V EE may not exceed 10V. For operation as a digital multiplexer/demultiplexer, V EE is connected to GND (Typically Ground). The is available in standard packages of SOIC-16 and DIP-16. Features Wide Operation Voltage: ±5.0V or 10V Low On-resistance: - 55Ω (Typ.) at -V EE =5V - 40Ω ( Typ.) at -V EE =10V Ultra Low THD+N: 10V, 5.0V Ultra Low Crosstalk: -120dB Ultra Low Noise: 6.0μV RMS Operating Temperature: -40ºC to 85ºC Applications LCD TV/PDP TV/CRT TV 4:1 Multi-channel Signal Selecting Function Table E Control Input S1 S0 On Channel L L L ny0 nz L L H ny1 nz L H L ny2 nz L H H ny3 nz H X X None SOIC-16 DIP-16 Figure 1. Package Types of Oct Rev

2 Pin Configuration M Package (SOIC-16) P Package (DIP-16) 2Y VCC 2Y Y2 2Z Y1 2Y Z 2Y Y0 E Y3 VEE 7 10 S0 GND 8 9 S1 Figure 2. Pin Configuration of (Top View) Pin Descriptions Pin Number Pin Name Function 1 2Y0 2CH signal input or output terminal 0 2 2Y2 2CH signal input or output terminal 2 3 2Z 2CH common signal input or output terminal 4 2Y3 2CH signal input or output terminal 3 5 2Y1 2CH signal input or output terminal 1 6 E Enable input (Active LOW) 7 VEE Negative supply voltage 8 GND Ground (0V) 9 S1 Select logic input terminal 1 10 S0 Select logic input terminal Y3 1CH signal input or output terminal Y0 1CH signal input or output terminal Z 1CH common signal input or output terminal 14 1Y1 1CH signal input or output terminal Y2 1CH signal input or output terminal 2 16 VCC Positive supply voltage 2

3 Functional Block Diagram Figure 3. Functional Block Diagram of Schematic Diagram (One Switch) Figure 4. Schematic Diagram of 3

4 Ordering Information - Circuit Type Package M: SOIC-16 P: DIP-16 G1: Green TR: Tape & Reel Blank: Tube Package Temperature Range SOIC to 85 C Part Number Marking ID Packing Type M-G1 M-G1 Tube MTR-G1 M-G1 Tape & Reel DIP to 85 C P-G1 P-G1 Tube BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. 4

5 Absolute Maximum Ratings (Note 1, 2) Parameter Symbol Condition Value Unit Power Supply Voltage -0.5 to 11.0 V Input Diode Current Switch Diode Current I IK I SK VI<-0.5V, VI> +0.5V VS<-0.5V, VS> +0.5V 20 ma 20 ma Switch Current I S -0.5V<VS< +0.5V 25 ma V EE Current I EE 20 ma Current GND Current Power Dissipation I CC I GND P D T A =-40ºC to 85ºC (Note 3) 50 ma 500 mw Storage Temperature Range T STG -65 to 150 ºC Operating Temperature Range Junction T J 150 ºC Power Dissipation Per Switch P S 100 mw ESD (Machine Model) 200 V ESD (Human Body Model) 2000 V Note 1: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Note 2: To avoid drawing current out of pins nz, when switch current flows in pins nyn, the voltage drop across the bidirectional switch must not exceed 0.4V. If the switch current flows into pins nz, no VCC current will flow out of pins nyn. In this case there is no limit for the voltage drop across the switch, but the voltages at pins nyn and nz may not exceed or V EE. Note 3: Above 70ºC derate linearly with 12mW/K (DIP-16 package). Above 70ºC derate linearly with 8mW/K (SOIC-16 package) 5

6 Recommended Operating Conditions Parameter Symbol Condition Min Typ Max Unit Supply Voltage V IN -GND V EE Logic Input Voltage V I V EE V Switch Signal Input/ Output Voltage Operating Ambient Temperature Range Input Rise and Fall Time V IS /V OS V EE V T A ºC t r, t f =5.0V =10V V ns Electrical Characteristics DC Characteristics V IS is the input voltage at pins nyn or nz, whichever is assigned as an input; V OS is the output voltage at pins nz or nyn, whichever is assigned as an output, voltages are referenced to GND (Ground=0V). Parameter High-level Input Voltage Symbol V IH Conditions Other (V) V EE (V) Min Typ Max Unit V Low-level Input Voltage V IL V Input Leakage Current Analog Switch Off-state Current Analog Switch On-state Current Quiescent Supply Current I LI I S (Off) I S (On) I CC V I = or GND V I =V IH or V IL, V S = -V EE (Figure 5) ±1.0 μa 10 0 ±1.0 μa 5.0 ±1.0 μa Per Channel 10 0 ±1.0 μa All Channels 10 0 ±2.0 μa V I =V IH or V IL, V S = -V EE 10 0 ±2.0 μa (Figure 6) V I = or GND, V IS =V EE or, μa V OS = or V EE μa 6

7 Electrical Characteristics (Continued) Resistance R ON V IS is the input voltage at pins nyn or nz, which is assigned as an input ((note 4) see figure 7) Parameter On-resistance (Peak) Symbol R ON (Peak) Other V IS = to V EE, V I =V IH or V IL Conditions (V) V EE (V) I S (μa) Min Typ Max Unit Ω Ω On-resistance (Rail) R ON (Rail) V IS =V EE, V I =V IH or V IL V IS =, V I =V IH or V IL Ω Ω Ω Ω Maximum On-resistance Difference Between Any Two Channels R ON V IS = to V EE, V I =V IH or V IL Ω Ω Note 4: When supply voltages ( -V EE ) near 2.0V the analog switch On-resistance becomes extremely non-linear. When using a supply of 2V, it is recommended to use these devices only for transmitting digital signals. 7

8 Electrical Characteristics (Continued) AC Characteristics GND=0V, t r =t f =6ns, C L =50pF Parameter Propagation Delay V IS to V OS Turn-on Time E, Sn to VOS Turn-off Time E, Sn to VOS Symbol Other t PHL /t PLH = (Figure 24) t PZH /t PZL t PHZ /t PLZ Conditions (V) V EE (V) Min Typ Max Unit ns ns =1kΩ ns (Figure 25 and 26) ns =1kΩ ns (Figure 25 and 26) ns Recommended conditions and typical values, GND=0V, T A =25ºC, C L =50pF. V IS is the input voltage at pins nyn or nz, whichever is assigned as an input. V OS is the output voltage at pins nyn or nz, whichever is assigned as an output. Parameter Sine-wave Distortion Switch OFF Signal Feed-through Crosstalk Between Two Channels Crosstalk Between Two Switches /Multiplexers Crosstalk Voltage Between Control and Any Switch (Peak-to-peak Value) Frequency Response (-3dB) Output Noise Voltage Symbol d SIN α OFF (Feedthrough) α CT(S) V CT(P-P) f MAX Other Conditions V IS (p-p) (V) (V) V EE (V) Min Typ Max Unit f =1kHz, % =10kΩ (Figure 8) % f=10khz, % =10kΩ (Figure 8) % =10kΩ, f=1mhz db (Figure 9), V IS =1V RMS db =10kΩ, db f=1khz (Figure 10), V IS =1V RMS db =10kΩ, db f=1khz (Figure 10), V IS =1V RMS db =10kΩ, f=1mhz, E or Sn, Square-wave Between and GND, t r = t f =6ns (Figure 11) =10kΩ (Figure 8) mv MHz MHz V NOISE A-weighted μv RMS 8

9 Typical Test Circuit LOW (From Select Input) HIGH (From Select Input) nyn nz nyn nz A A A V I = or V EE V O =V EE or V IS =V EE or V OS (Open Circuit) V EE V EE Figure 5. Test Circuit for Measuring OFF-state Current Figure 6. Test Circuit for Measuring ON-state Current HIGH (From Select Input) V nyn nz V IS=0 to -V EE I IS V EE Figure 7. Test Circuit for Measuring R ON Figure 8. Test Circuit for Measuring Sine-wave Distortion and Minimum Frequency Response 9

10 Typical Test Circuit (Continued) V IS C IN nyn/nz nz/nyn V os Channel ON C L GND V IS C IN nyn/nz nz/nyn V os (a) Channel ON Condition Channel OFF C L db GND V IS C IN nyn/nz nz/nyn V os Channel OFF C L db GND (b) Channel OFF Condition Figure 9. Test Circuit for Measuring Switch Off Signal Feed-through Figure 10. Test Circuits for Measuring Crosstalk Between Any Two Switches/Multiplexers The crosstalk is defined as follows (oscilloscope output): V (p-p) Sn or E V IS Open nyn/nz 2 DUT 2 nz/nyn Pulse Generator V I DUT V O 2 2 C L Oscilloscope GND R T C L GND V EE V EE Figure 11. Test Circuit for Measuring Crosstalk Performance Figure 12. Test Circuit for Measuring AC Between Control and Any Switch 10

11 Typical Performance Characteristics =5V,V EE =0V =10V V EE =0V R DSON (Ω) R DSON (Ω) Signal Output (V) Signal Output (V) Figure 13. R DSON vs. Signal Output Figure 14. R DSON vs. Signal Output 10 =5V,V EE =0V =10kΩ f=1khz 10 1 =10V,V EE =0V =10kΩ f=1khz THD+N (%) 1 THD+N (%) E Output Voltage Amplitude Output Voltage Amplitude Figure 15. THD+N vs. Output Voltage Amplitude Figure 16. THD+N vs. Output Voltage Amplitude 11

12 Typical Performance Characteristics (Continued) Gain (db ) =2.5V, V EE =-2.5V =10KΩ -5 1k 10k 100k 1M 10M 100M Frequency (Hz) Signal Output Voltage (dbv) =5V, V EE =0V 0-10 =10kΩ f=1khz Signal Input Voltage (dbv) Figure 17. Frequency Response Figure 18. Linear Range 20 Signal Output Voltage (dbv) =10V, V EE =0V =10kΩ f=1khz VIS 1V/div VOS 1V/div VCC=5V, VEE=0V Signal Input Voltage (dbv) 10ns/div Figure 19. Linear Range Figure 20. Propagation Delay 12

13 Typical Performance Characteristics (Continued) VOS 1V/div VCC=5V, VEE=0V =5V, V EE =0V =10kΩ 2Y0 to 1Y0 1Y0 to 2Y0 VIS 1V/div Crosstalk (db) k 10k 100k 10ns/div Frequency (Hz) Figure 21. Propagation Delay Figure 22. Crosstalk vs. Frequency Crosstalk (db) =10V,V EE =0V =10kΩ 2Y0 to 1Y0 1Y0 to 2Y0 V OS Output V I V IS Output 50% GND V OH V OL 50% t PLH t PHL k 10k 100k Frequency (Hz) Figure 23. Crosstalk vs. Frequency Figure 24. Waveforms Showing the Input (V IS ) to Output (V OS ) Propagation Delays 13

14 Typical Performance Characteristics (Continued) Figure 25. Waveforms Showing the Turn-on and Turn-off Times (V M = 50 %, V I = GND to ) Figure 26. Input Pulse Definitions t r and t f Amplitude V M F max Pulse Width Other 50% < 2ns 6ns 14

15 Typical Application Figure 27. Typical Application of 15

16 Mechanical Dimensions SOIC-16 Unit: mm(inch) B 1.350(0.053) 1.750(0.069) 1.250(0.049) 1.650(0.065) 0.330(0.013) 0.510(0.020) (0.010) A 20: (0.016) 1.270(0.050) 1.270(0.050) BSC 9.800(0.386) (0.402) 0 8 R0.200(0.008) R0.200(0.008) 0.170(0.007) 0.250(0.010) 5.800(0.228) 6.240(0.246) 3.800(0.150) 4.040(0.159) B 20: (0.002) 0.250(0.010) 0.200(0.008) 0.250(0.010) C-C 50: A 0.400(0.016) 45 C C 0.200(0.008) S φ1.000(0.039) Depth 0.200(0.008) 1.000(0.039) Note: Eject hole, oriented hole and mold mark is optional. 16

17 Mechanical Dimensions (Continued) DIP-16 Unit: mm(inch) 17

18 IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD - Headquarters Semiconductor Manufacturing Limited - Wafer BCD FabSemiconductor Manufacturing Limited BCD - Wafer Semiconductor Fab Manufacturing Limited Shanghai - IC Design SIM-BCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 1600, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Limited Industrial Park, , China 800 Yi Advanced Shan Road, Analog Shanghai Circuits , (Shanghai) China Corporation Tel: 800, , Yi Shan Road, Shanghai Fax: , China Tel: F, Zone B, 900, 1491, Yi Fax: Shan Road, Shanghai , China Tel: , Fax: Tel: , Fax: REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIM-BCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Unit A Room SIM-BCD 1203, Skyworth Semiconductor Bldg., Gaoxin Manufacturing Ave.1.S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office Advanced China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited 4F, 298-1, BCD Rui Semiconductor Guang Road, (Taiwan) Nei-Hu District, Company Taipei, Limited Taiwan 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD Semiconductor Huntwood Ave. Corporation Hayward, CA 94544, Huntwood USA Ave. Hayward, Room Tel: E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen , China Tel: Taiwan 2808 CA Tel : 94544, U.S.A Tel: Fax: Fax: Fax: Tel: Fax: Tel Fax: : Fax: