TL070 JFET-INPUT OPERATIONAL AMPLIFIER

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1 Low Power Consumption Wide Common-Mode and Differential Voltage Ranges Low Input Bias and Offset Currents Output Short-Circuit Protection Low Total Harmonic Distortion.3% Typ Low Noise V n = 8 nv/ Hz Typ at f = khz High Input Impedance...JFET Input Stage Common-Mode Input Voltage Range Includes V CC Latch-Up-Free Operation High Slew Rate...3 V/µs Typ description symbol TL7 The JFET-input TL7 operational amplifier is OFFSET N2 designed as the lower-noise version of the TL8 amplifier with low input bias and offset currents and fast slew rate. The low harmonic distortion and low noise make the TL7 ideally suited for high-fidelity and audio preamplifier applications. This amplifier features JFET inputs (for high input impedance) coupled with bipolar output stages integrated on a single monolithic chip. The TL7C device is characterized for operation from C to 7 C. The TL7I device is characterized for operation from 4 C to 85 C. The TL7M device is characterized for operation from 55 C to 25 C. AVAILABLE OPTIONS N/COMP IN IN V CC N/COMP COMP PACKAGE VIOmax TA AT 25 C SMALL OUTLINE PLASTIC DIP TSSOP (D) (P) (PW) C to 7 C mv TL7CD TL7CP TL7CPW 4 C to 85 C mv TL7ID TL7IP 55 C to 25 C mv TL7MD TL7MP IN IN D, P, OR PW PACKAGE (TOP VIEW) COMP V CC OUT OFFSET N2 OUT PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 994, Texas Instruments Incorporated POST OFFICE BOX DALLAS, TEXAS 75265

2 TL7 schematic VCC IN IN 64 Ω 28 Ω OUT 64 Ω N/COMP OFFSET N2 COMP 8 Ω ÌÌÌ 8 Ω VCC All component values shown are nominal. COMPONENT COUNT Transistors Diodes Resistors epi-fet JFET Includes all bias and trim circuitry 2 POST OFFICE BOX DALLAS, TEXAS 75265

3 TL7 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) Supply voltage, V CC (see Note ) V Supply voltage, V CC V Differential input voltage, V ID (see Note 2) ±3 V Input voltage, V I (see Notes and 3) ±5 V Duration of short-circuit current (see Note 4) unlimited Continuous total dissipation See Dissipation Rating Table Operating free-air temperature range, T A : C suffix C to 7 C I suffix C to 85 C M suffix C to 25 C Storage temperature range C to 5 C Lead temperature,6 mm (/6 inch) from case for seconds C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES:. All voltage values, except differential voltages, are with respect to the midpoint between VCC and VCC. 2. Differential voltages are at IN with respect to IN. 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 5 V, whichever is less. 4. The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded. PACKAGE TA 25 C POWER RATING DERATING FACTOR DISSIPATION RATING TABLE DERATE ABOVE TA TA = 7 C POWER RATING TA = 85 C POWER RATING POWER RATING D 68 mw 5.8 mw/ C 33 C 464 mw 377 mw 45 mw P 68 mw 8. mw/ C 65 C 64 mw 52 mw 2 mw PW 525 mw 4.2 mw/ C 7 C 336 mw N/A N/A POST OFFICE BOX DALLAS, TEXAS

4 TL7 electrical characteristics, V CC± = ±5 V (unless otherwise noted) TL7C PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT 25 C 3 VIO Input offset voltage VO =, RS =5Ω Ω mv Full range 3 αvio Temperature coefficient of input offset voltage IIO Input offset current VO = IIB Input bias current VO = VO =, RS = 5 Ω Full range 8 µv/ C VICR Common-mode input voltage range 25 C ± VOM Maimum peak output voltage swing RL kω AVD 25 C 5 pa Full range na 25 C 65 2 pa Full range 7 na 2 to 5 RL = kω 25 C ±2 ±3.5 RL 2 kω Full range Large-signal g differential voltage VO O = ± V, 25 C 25 2 amplification RL 2 kω Full range 5 V ±2 V B Unity-gain bandwidth 25 C 3 MHz ri Input resistance 25 C 2 Ω CMRR ksvr Common-mode rejection ratio Supply voltage rejection ratio ( VCC ±/ VIO) VIC = VICRmin, RS = 5 Ω VCC = ±9 V to ±5 V, RS = 5 Ω VO =, VO =, ± V/mV 25 C 7 db 25 C 7 db ICC Supply current VO =, No load 25 C ma VO/VO2 Crosstalk attenuation AVD = 25 C 2 db All characteristics are measured under open-loop conditions with zero common-mode voltage unless otherwise specified. Full range for TA is C to 7 C. Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive as shown in Figure 5. Pulse techniques must be used that will maintain the junction temperature as close to the ambient temperature as possible. 4 POST OFFICE BOX DALLAS, TEXAS 75265

5 electrical characteristics, V CC± = ±5 V (unless otherwise noted) TL7 TL7I PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT 25 C 3 VIO Input offset voltage VO =, RS =5Ω Ω mv Full range 3 αvio Temperature coefficient of input offset voltage IIO Input offset current VO = IIB Input bias current VO = VO =, RS = 5 Ω Full range 8 µv/ C 25 C 5 pa Full range na 25 C 65 2 pa Full range 2 na VICR Common-mode input voltage range 25 C ± 2 to 5 RL = kω 25 C ±2 ±3.5 VOM Maximum peak output voltage swing RL kω AVD RL 2 kω Full range Large-signal g differential voltage VO = ± V, 25 C 25 2 amplification RL 2 kω Full range 5 V ±2 V B Unity-gain bandwidth 25 C 3 MHz ri Input resistance 25 C 2 Ω CMRR ksvr Common-mode rejection ratio Supply voltage rejection ratio ( VCC ±/ VIO) VIC = VICRmin, RS = 5 Ω VCC = ±9 V to ±5 V, RS = 5 Ω VO =, VO = ± V/mV 25 C 7 db 25 C 7 db ICC Supply current VO =, No load 25 C ma VO/VO2 Crosstalk attenuation AVD = 25 C 2 db All characteristics are measured under open-loop conditions with zero common-mode voltage unless otherwise specified. Full range for TA is 4 C to 85 C. Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive as shown in Figure 5. Pulse techniques must be used that will maintain the junction temperature as close to the ambient temperature as possible. POST OFFICE BOX DALLAS, TEXAS

6 TL7 electrical characteristics, V CC± = ±5 V (unless otherwise noted) TL7M PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT 25 C 3 VIO Input offset voltage VO =, RS =5Ω Ω mv Full range 3 αvio Temperature coefficient of input offset voltage IIO Input offset current VO = IIB Input bias current VO = VO =, RS = 5 Ω Full range 8 µv/ C 25 C 5 pa Full range 2 na 25 C 65 2 pa Full range 5 na VICR Common-mode input voltage range 25 C ± 2 to 5 RL = kω 25 C ±2 ±3.5 VOM Maximum peak output voltage swing RL kω AVD Large-signal g differential voltage amplification RL 2 kω VO = ± V, RL 2kΩ Full range V ±2 V ± 25 C 25 2 Full range 5 B Unity-gain bandwidth 25 C 3 MHz ri Input resistance 25 C 2 Ω CMRR ksvr Common-mode rejection ratio Supply voltage rejection ratio ( VCC ±/ VIO) VIC = VICRmin, RS = 5 Ω VCC = ±9 V to ±5 V, RS = 5 Ω VO =, VO =, V/mV 25 C 7 db 25 C 7 db ICC Supply current VO =, No load 25 C ma VO/VO2 Crosstalk attenuation AVD = 25 C 2 db All characteristics are measured under open-loop conditions with zero common-mode voltage unless otherwise specified. Full range for TA is 55 C to 25 C. Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive as shown in Figure 5. Pulse techniques must be used that will maintain the junction temperature as close to the ambient temperature as possible. operating characteristics, V CC± = ±5 V, T A = 25 C SR Slew rate at unity gain PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VI = V, CL = pf,, See Figure 8 3 V/µs VI = 2 mv,,. µs tr Rise time overshoot factor, CL = pf, See Figure 2 % Vn Equivalent input noise voltage RS =2Ω Ω f = khz 8 nv/ Hz f = Hz to khz 4 µv In Equivalent input noise current RS = 2 Ω, f = khz. pa/ Hz THD Total harmonic distortion VO(rms) = V, RL 2 kω, RS kω, f = khz.3 % 6 POST OFFICE BOX DALLAS, TEXAS 75265

7 PARAMETER MEASUREMENT INFORMATION TL7 kω VI CL = pf OUT VI kω OUT CC = 8 pf RL CL = pf Figure. Unity-Gain Amplifier Figure 2. Gain-of- Inverting Amplifier kω C2 VCC C 5 pf MΩ IN N OUT IN IN N2 2 MΩ N COMP OUT Figure 3. Feed-Forward Compensation Figure 4. Input Offset Voltage Null Circuit POST OFFICE BOX DALLAS, TEXAS

8 TL7 TYPICAL CHARACTERISTICS Table of Graphs FIGURE IIB Input bias current Free-air temperature 5 VOM AVD Maximum output voltage Large-signal differential voltage amplification Frequency 6, 7, 8 Free-air temperature 9 Load resistance Supply voltage Free-air temperature 2 Frequency 4 AVD Differential voltage amplification Frequency 3 Phase shift Frequency 4 Normalized unity-gain bandwidth Free-air temperature 5 Normalized phase shift Free-air temperature 5 CMRR Common-mode rejection ratio Free-air temperature 6 ICC Supply current Supply voltage 7 Free-air temperature 8 PD Total power dissipation Free-air temperature 9 Normalized slew rate Free-air temperature 2 Vn Equivalent input noise voltage Frequency 2 THD Total harmonic distortion Frequency 22 Large-signal pulse response Time 23 VO Output voltage Elapsed time 24 8 POST OFFICE BOX DALLAS, TEXAS 75265

9 TYPICAL CHARACTERISTICS TL7 IIB Input Bias Current na. VCC± = ± 5 V INPUT BIAS CURRENT VOM V OM Maximum Peak Output Voltage V ±5 ±2.5 ± ±7.5 ±5 ±2.5 MAXIMUM PEAK OUTPUT VOLTAGE FREQUENCY See Figure 2 VCC ± = ± V VCC ± = ±5 V ÌÌÌÌ ÌÌÌÌ Figure 5 k k k M M Figure 6 VOM Maximum Peak Output Voltage V ±5 ±2.5 ± ±7.5 ±5 ±2.5 MAXIMUM PEAK OUTPUT VOLTAGE FREQUENCY VCC ± = ± V VCC ± = ±5 V See Figure 2 VOM Maximum Peak Output Voltage V ±5 ±2.5 ± ±7.5 ±5 ±2.5 MAXIMUM PEAK OUTPUT VOLTAGE FREQUENCY See Figure 2 ÌÌÌÌ TA = 55 C k k k M M k 4 k k 4 k M 4 M M Figure 7 Figure 8 Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. An 8-pF compensation capacitor is used. POST OFFICE BOX DALLAS, TEXAS

10 TL7 TYPICAL CHARACTERISTICS VOM V Maximum Peak Output Voltage V ±5 ±2.5 ± ±7.5 ±5 ± MAXIMUM PEAK OUTPUT VOLTAGE See Figure 2 RL = kω VOM V Maximum Peak Output Voltage V ±5 ±2.5 ± ±7.5 ±5 ±2.5. MAXIMUM PEAK OUTPUT VOLTAGE LOAD RESISTANCE See Figure RL Load Resistance kω Figure 9 Figure VOM V Maximum Peak Output Voltage V ±5 ±2.5 ± ±7.5 ±5 ±2.5 MAXIMUM PEAK OUTPUT VOLTAGE SUPPLY VOLTAGE RL = kω VCC ± Supply Voltage V 6 A VD Large-Signal Differential Voltage Amplification V/mV LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION VS 75 VO = ± V Figure Figure 2 Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. An 8-pF compensation capacitor is used. POST OFFICE BOX DALLAS, TEXAS 75265

11 A AVD Differential Voltage Amplification db DIFFERENTIAL VOLTAGE AMPLIFICATION FREQUENCY WITH FEED-FORWARD COMPENSATION k k k M TYPICAL CHARACTERISTICS C2 = 3 pf See Figure 3 M A VD Large-Signal Differential Voltage Amplification db TL7 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT FREQUENCY Phase Shift (right scale) VCC± = ±5 V to ±5 V Differential Voltage Amplification (left scale) k k k M M Figure 3 Figure 4 Normalized Unity-Gain Bandwidth NORMALIZED UNITY-GAIN BANDWIDTH AND PHASE SHIFT Phase Shift (right scale) f = B for Phase Shift Unity-Gain Bandwidth (left scale) Normalized Phase Shift CMRR Common-Mode Rejection Ratio db COMMON-MODE REJECTION RATIO RL = kω Figure 5 Figure 6 Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. An 8-pF compensation capacitor is used. POST OFFICE BOX DALLAS, TEXAS 75265

12 TL7 TYPICAL CHARACTERISTICS ICC ICC ± Supply Current ma Á Á.6.4 No Signal No Load SUPPLY CURRENT SUPPLY VOLTAGE CC ICC ± Supply Current ma I SUPPLY CURRENT ÌÌÌÌ No Signal ÌÌÌÌ No Load VCC ± Supply Voltage V Figure 7 Figure 8 PD P D Total Power Dissipated mw No Signal No Load TOTAL POWER DISSIPATED Normalized Slew Rate CL = pf NORMALIZED SLEW RATE Figure 9 Figure 2 Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. An 8-pF compensation capacitor is used. 2 POST OFFICE BOX DALLAS, TEXAS 75265

13 TYPICAL CHARACTERISTICS TL7 V Vn n Equivalent Input Noise Voltage nv/hz nv/ Hz EQUIVALENT INPUT NOISE VOLTAGE FREQUENCY AVD = RS = 2 Ω THD Total Harmonic Distortion % Á Á.4 TOTAL HARMONIC DISTORTION FREQUENCY AVD = VI (RMS) = 6 V 4 4 k 4 k k 4 k k. 4 k 4 k k 4 k k Figure 2 Figure 22 VO VI and Input and Output Voltage V VOLTAGE-FOLLOWER LARGE-SIGNAL PULSE RESPONSE Output ÌÌÌ Input CL = pf VO VO Output Voltage mv Overshoot % OUTPUT VOLTAGE ELAPSED TIME 9% tr t Time µs t Elasped Time µs.7 Figure 23 Figure 24 POST OFFICE BOX DALLAS, TEXAS

14 TL7 22 kω APPLICATION INFORMATION Ω Input Balance 75 µf.375 µf. µf µf Ω 47 kω 5 pf 27 kω VCC TL7 VCC 5 kω pf Gain kω MIN kω Bass MAX kω 47 µf.3 µf.3 µf kω 3.3 kω.3 µf.3 µf MIN kω Treble MAX 68 kω VCC TL7 VCC pf Output Figure 25. IC Preamplifier Voltage Amplification db IC PREAMPLIFIER RESPONSE CHARACTERISTICS Á MAX Bass MAX Treble MIN Bass See Figure 25 Á MIN Treble k 2 k 4 k k 2 k Figure 26 4 POST OFFICE BOX DALLAS, TEXAS 75265

15 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ( CRITICAL APPLICATIONS ). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER S RISK. In order to minimize risks associated with the customer s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI s publication of information regarding any third party s products or services does not constitute TI s approval, warranty or endorsement thereof. Copyright 998, Texas Instruments Incorporated

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