InP HBT technology development at IEMN

Transcription

1 InP HBT technology development at IEMN Advanced NanOmetric Devices Group, Institut d Electronique de Microelectronique et de Nanotechnology, Lille, FRANCE Date

2 Outline Which applications for THz GaAsSb/InP DHBT GaInAs/InP SHBT Thermal Management 6.1 Å AlInAsSb/GaInSb DHBT Conclusion

3 Where is the Terahertz? mm Waves Submm Waves

4 Applications for Terahertz : Radio Astronomy Observation of the Universe Planck space telescope Cosmic Microwave Background Crédits : European Space Agency

5 Applications for Terahertz : Science Spectroscopy & Imaging Security Medical diagnostic Analysis

6 Applications for Terahertz : Telecommunication Optical Fiber Transmission 1 Gb/s 16 Gb/s Terahertz Wireless Communication High-Speed Wireless Transmission THz Carrier Frequency (.2,.6 THz) Data Rate : 4, 1 Gbit/s

7 Bande interdite (ev) FET &TBH 1 st generation Compound Semiductors for THz Devices FET &TBH 2 sd generation FET &TBH 3 th generation 2,5 2 GaP AlP AlAs AlSb Band Gap Engineering Versatility 1,5 1 GaAs InP ² GaSb AlInAs GaInAs InP GaAsSb GaSb AlSb InSb,5 InSb InAs InAs 5,4 5,5 5,6 5,7 5,8 5,9 6 6,1 6,2 6,3 6,4 6,5 Type I Type II Type III Type I Paramètre de maille (Å) Matériaux µ n (cm 2 /V.s) µ p (cm 2 /V.s) GaAs 85 4 InGaAs 11 3 InAs GaSb 5 85 AlSb 2 42 InSb Diverses Mobilities High Electron Mobility : InGaAs, InAs, InSb High Hole Mobility : GaSb, InSb

8 R E r E C BE III-V Bipolar Transistor : 3 Axes of Optimization 1 W E /2 = τ + τ + C r + C r + R base collector be E bc E 2πf Emitter Width InGaAs SG E InP Emitter Undercut v R Bint R Blink R Bext T r b c E C T T 2 b c nkt qi f = f 8πR E max / 2D / 2v n sat cb Ac /Tc ( ) τ ex + bb R C coll cbc Vertical Scaling : Epitaxy Lateral Scaling : Technology C BC Int C BC Link W BC /2 C BC Con Base-Collecteur Width R / R ex bb sh,e c, emet A We Wbc Wlink sh,bc sh,link 12L 6L 2L A e emet Ohmic Contacts Technology & Epitaxy e e contact contacts

9 Emitter Base Collector

10 Emitter Last Generation Base Emitter Dimension 15 2 nm Base Collector 1

11 InP DHBT Type-II Heterostruture InP/GaAsSb/InP Emitter n Base p Type II DHBT InP/GaAsSb : Interests & Structure Collector n Thickness (Å) Material Doping (cm -3 ) Description 5 In,85 Ga,15 As > : Si Emitter Cap 1 In x Ga 1-x As : Si Emit. Cap Grad. 8 InP : Si Emitter 35 InP : Si Emitter E c : C 3 GaAs 51 Sb 49 Base 13 Ω/o 13 InP : Si Collector E V Epitaxial Design Collector Potential Energy Injection High Confinement for Holes High Breakdown Voltage 1 InP : Si Sub-Collector 5 In,53 Ga,47 As : Si Cont. Sub-Coll. 2 InP : Si Sub-Collector 2 In,53 Ga,47 As NID Etch stop Substrate Semi-insulating InP

12 I C (ma/µm 2 ) I B, I C (A) Current Gain, Type II DHBT InP/GaAsSb : Results DC Measurements I B From to 8 µa 5 µa/step A E =.55 x 3.5 µm V CE (V) I B A E =.55 x 3.5 µm I C V CB = V 1-4 Gain V BE (V) BV CEO = 4.6 J E = 1 ka/cm 2 β = 24 M. Zaknoune, et al. IEEE EDL, Vol. 35, No. 3, 214. ρ CBase 7 Ω µm 2, Base ρ sheet = 13 Ω/ ρ CEmit. 2 Ω µm 2

13 Gain (db) Output Power (dbm), Power Gain (db) PAE (%) Results Type II DHBT InP/GaAsSb : RF & Power Measurements at 94 GHz V CE = 1.9 V I C = 6.7 ma/µm2 H 21 2 F T = 31 GHz U F MAX = 48 GHz F T = 31 GHz Frequency (Hz) F MAX = 48 GHz M. Zaknoune, et al. IEEE EDL, Vol. 35, No. 3, 214. A E =.55 x 3.5 µm Output Power (dbm) 12 Power Gain (db) 3 1 PAE (%) A E =.2 x 9.5 µm Absorbed Power (dbm) I C = 16 ma/µm 2, I B = 2.6 ma, V CE = 2.8 V P OUT = 12.8 dbm (1.26 mw/µm 2 ) P.A.E = 25 %, Power Gain = 4.5 db

14 Type I SHBT InP/InGaAs : Interets & Structrure InP SHBT Type-I Heterostruture InP/InGaAs/InGaAs Emitter n Base p Collector n Thickness (Å) Material Doping (cm -3 ) Description 5 InAs > : Si Emitter Cap 1 In x Ga 1-x As : Si Emit. Cap Grad. 7 InP : Si Emitter 3 InP : Si Emitter 3 In x Ga 1-x As : C Base Grad. Mature Epitaxial System High Electron Mobilty Low Breakdown Voltage E c E V 5 In x Ga 1-x As NID Collector Grad. In,53 Ga,47 As : Si Pulse Doping 1 In,53 Ga,47 As NID Collector 1 In,53 Ga,47 As : Si Sub-Collector 2 InP : Si Sub-Collector 5 In,53 Ga,47 As : Si Cont. Sub-Coll. 3 InP : Si Sub-Collector 2 In,53 Ga,47 As NID Etch stop Substrate Semi-insulating InP

15 I C (ma/µm 2 ) I C, I B (A) Current Gain, Type I SHBT InP/InGaAs : Results DC Measurements I B From to 7 µa 5 µa/step A E =.2 x 2.5 µm V CE (V).1 1E-3 1E-4 1E-5 1E-6 1E-7 1E-8 I B (A) A E =.2 x 2.5 µm 2 I C (A) V CB = V Beta 1E V BE BV CEO = 2.5 J E = 1 ka/cm 2 β = 12 ρ CBase 2 Ω µm 2, Base ρ sheet = 75Ω/ ρ CEmit. 2 Ω µm 2

16 Gain (db) (GHz) - Single Pole Extraction Output Power (dbm), Power Gain (db) Results V CE = 1.5 V I C = 5.8 ma/µm 2 A E =.2 x 2.5 µm 2 H21 2 U F T F T = 35 GHz F MAX = 63 GHz Type I SHBT InP/InGaAs : RF & Power Measurements at 94 GHz Single Pole Extraction Frequency (Hz) FT Output Power Power Gain PAE A E =.2 x 9.5 µm Absorbed Power (dbm) PAE (%) F T = 35 GHz F MAX = 63 GHz IEEE EDL Under review I C = 8 ma/µm 2, V CE = 2 V, I B = 2.5 ma P OUT = 12.1 dbm (8.6 mw/µm 2 ) P.A.E = 31 %, Power Gain = 6.3 db

17 F MAX (GHz HBT : State of the Art Teledyne DHBT UCSB DHBT UIUC SHBT UIUC DHBT ETHZ DHBT GaAsSb HRL DHBT Northrop DHBT NTT DHBT IEMN SHBT IEMN DHBT GaAsSb F T (GHz) 17

18 (W/Km) DHBT Thermal Management : Thermal Issues 1 at 3 K 8 InP Si (168) AlN (2) 6 4 InAs GaAs 2 InGaAs InAlAsInGaP SiN SiO polyimid Material High Dissipated Power High Junction Temperature Degraded Material Properties Poor Device Reliability and Low Median-Time-To-Failure (MTTF)

19 Bonding layer Inverse active structure Original Substrate Bonding layer Host substrate DHBT Thermal Management : Active Layer Transfer Principle Original substrate Inverse active structure Bonding layer Host substrate Pressure + Temperature Inverse active structure Bonding layer Host substrate E contact Emitter Thermocompression Au Au Au (host Sub) / Au ( active sub) Base Collector Bonding layer Host substrate FINAL STRUCTURE

20 Bonding layer Inverse active structure Original Substrate Bonding layer Host substrate DHBT Thermal Management : Active Layer Transfer Principle FINAL STRUCTURE Original substrate Inverse active structure Pressure + Temperature Thickness (Å) Material Doping (cm -3 ) Description Bonding layer 1 InP Host substrate : Si Collector 2 GaAs.51 Sb : C Base 2 Al x In 1-x P : Si Emitter 1 InP : Si Emitter Con. 2 In,53 Ga,47 As : Si Emit. Cap. E contact Substrate Emitter Base Collector Bonding layer Host substrate Inverse active structure Bonding layer Host substrate Thermocompression Au Au Au (host Sub) / Au ( active sub) Semi-insulating InP

21 DHBT Thermal Management : Host Substrate Ceramic Substrate of AlN Very High Roughness Non Effective Bonding Perfect Bonding On Si Substrate

22 DHBT Thermal Management : Active Layer Transfer Process HR Si Mo/Pt/Au : 25/4/25 Å Active Layer Ti/Au : 25/25 HR Silicon Host Substrate Low R TH : 1625 K/W Own InP Substrate R TH : 4452 K/W 65% Lower for Reported Device A. Thiam, et al. IEEE EDL, Vol. 35, no. 1, 214.

23 Bande interdite (ev) " 6.1 Å " Antimonide HBT : Ideal Structure? ΔEc =.7 ev 2,5 AlP.86 ev.35 ev.35 ev 2 1,5 1 GaP AlAs GaAs InP AlInAsSb AlSb ΔEv =.2 ev ΔEc =.57 ev 1.17 ev.44 ev.44 ev ΔEv =.16 ev Al.5 In.5 Sb,5 5,4 5,5 5,6 5,7 5,8 5,9 6 6,1 6,2 6,3 6,4 6,5 InAs Paramètre de maille (Å) GaSb Ga.65 In.35 Sb InSb Ga.5 In.5 Sb 23

24 " 6.1 Å" Antimonide HBT Type-II Heterostruture AlInAsSb/GaInSb/AlInAsSb Emitter n Base p " 6.1 Å " Antimonide HBT : AlInAsSb/GaInSb/AlInAsSb Collector n Thickness (Å) Material Doping (cm -3 ) Description 4 Ga,65 In,35 Sb : Te Emitter Cap 4 AlInAsSb : Te Emitter : C 4 Ga,51 In,49 Sb Base 7 Ω/o E c 15 AlInAsSb : Si Collector 3 Ga,5 In,5 Sb : Si Cont. Sub-Coll. 2 Metamorphic Buffer Substrate Semi-insulating InP E V High Electron Mobility High Hole Mobility Breakdown Voltage 24

25 metal metal oxydes " Ex Nihilo " Realization 6.1 Å HBT : semiconductor semiconductor Tunnel Effect Φ B Emitter Definition : AlInSb/GaInSb Wet Etching Selectivity Selectivity AlInSb/GaInSb HCl based solution S = 1 Selectivity GaInSb/AlInSb C 4 H 6 O 6 Tartric acid solution S = 12 Ohmic Contact : Doping Level Surface Treatment UV Ozone, NH 4 S, Ion Cleaning Interface Metal Mo, Ti, Pd

26 " Ex Nihilo " Realization 6.1 Å HBT : Al,33 In,67 As,31 Sb,69 /GaInSb/Al,33 In,67 As,31 Sb,69 TBH Emitter Width = 1 µm, Emitter Long = 5 µm After Air-Bridge Fabrication

27 I B, I C (A) Current Gain, Gain (db) I C (ma) A E = 2x15 m I B (A) I C (A) Beta AlInAsSb/GaInSb/AlInAsSb DHBT : DC and RF Performances V CE (V) A E = 2 x 15 µm 2 V CB = V I B From to 1 ma 1 µa/step V BE (V) V CE = 1.1 V I C = 2.65 ma/µm 2 H 21 2 F T = 52 GHz U F MAX = 49 GHz Frequency (Hz) A E = 1 x 15 µm 2 Current Density > 2 ka/cm 2 Current Gain = 2 RF Performances ~ 5 GHz E. Mairiaux, et al. IEEE EDL, Vol. 31, no. 4, 21.

28 I B, I C (A) Current Gain, Gain (db) I C (ma) A E = 2x15 m I B (A) I C (A) Beta AlInAsSb/GaInSb/AlInAsSb DHBT : DC and RF Performances V CE (V) A E = 2 x 15 µm 2 V CB = V I B From to 1 ma 1 µa/step V BE (V) V CE = 1.1 V I C = 2.65 ma/µm 2 H 21 2 F T = 52 GHz U F MAX = 49 GHz Frequency (Hz) A E = 1 x 15 µm 2 First World High frequency Demonstration F T = 52 GHz F MAX = 49 GHz Current Density > 2 ka/cm 2 Current Gain = 2 RF Performances ~ 5 GHz E. Mairiaux, et al. IEEE EDL, Vol. 31, no. 4, 21.

29 Conclusion GaAsSb/InP : High Output Level at 94 GHz GaAsSb/InP : High Output Level at 94 GHz Drastic Reduction of the Thermal Resistance when Active is Transferred on HR-Si Substrate 6.1 Å : First RF Demonstration at IEMN