MC3403, MC3303. Single Supply Quad Operational Amplifiers
|
|
- Anthony Randall
- 6 years ago
- Views:
Transcription
1 , M0 Single Supply Quad Operational Amplifiers The is a low cost, quad operational amplifier with true differential inputs. The device has electrical characteristics similar to the popular M7. However, the has several distinct advantages over standard operational amplifier types in single supply applications. The quad amplifier can operate at supply voltages as low as.0 V or as high as 6 V with quiescent currents about one third of those associated with the M7 (on a per amplifier basis). The common mode input range includes the negative supply, thereby eliminating the necessity for external biasing components in many applications. The output voltage range also includes the negative power supply voltage. Features Short ircuit Protected Outputs lass AB Output Stage for Minimal rossover Distortion True Differential Input Stage Single Supply Operation:.0 V to 6 V Split Supply Operation: ±.5 V to ±8 V Low Input Bias urrents: 500 na Max Four Amplifiers Per Package Internally ompensated Similar Performance to Popular M7 Industry Standard Pinouts ESD Diodes Added for Increased uggedness PbFree Packages are Available SOI D SUFFIX ASE 75A PDIP P SUFFIX ASE 66 x = or A = Assembly Location WL = Wafer Lot YY, Y = Year WW = Work Week G = PbFree Package MAKING DIAGAMS Mx0DG AWLYWW Mx0P AWLYYWWG PIN ONNETIONS Single Supply.0 V to 6 V V EE, GND Split Supplies.5 V to 8 V.5 V to 8 V V EE Out Inputs Inputs Out Inputs V EE /GND Inputs Out 7 8 Out (Top View) ODEING INFOMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor omponents Industries, LL, 0 January, 0 ev. Publication Order Number: /D
2 , M0 ODEING INFOMATION M0D M0DG Device Package Shipping SOI SOI (PbFree) 55 Units / ail M0D M0DG M0P M0PG D DG D DG SOI SOI (PbFree) PDIP PDIP (PbFree) SOI SOI (PbFree) SOI SOI (PbFree) 500 Tape & eel 5 Units / ail 55 Units / ail 500 Tape & eel P PG PDIP PDIP (PbFree) 5 Units / ail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and eel Packaging Specifications Brochure, BD80/D. MAXIMUM ATINGS ating Symbol Value Unit Power Supply Voltages Single Supply Split Supplies 6, V EE ±8 Vdc Input Differential Voltage ange (Note ) V ID ±6 Vdc Input ommon Mode Voltage ange (Notes and ) V I ±8 Vdc Storage Temperature ange T stg 55 to 5 Operating Ambient Temperature ange M0 T A 0 to 85 0 to 70 Junction Temperature T J 50 Stresses exceeding Maximum atings may damage the device. Maximum atings are stress ratings only. Functional operation above the ecommended Operating onditions is not implied. Extended exposure to stresses above the ecommended Operating onditions may affect device reliability.. Split power supplies.. For supply voltages less than ±8 V, the absolute maximum input voltage is equal to the supply voltage.
3 , M0 ELETIAL HAATEISTIS ( = 5 V, V EE = 5 V for ; = V, V EE = GND for M0 T A = 5, unless otherwise noted.) M0 haracteristic Symbol Min Typ Max Min Typ Max Unit Input Offset Voltage T A = T high to T low (Note ) V IO mv Input Offset urrent I IO T A = T high to T low na Large Signal Open Loop Voltage Gain = ±0 V, L =.0 k T A = T high to T low A VOL V/mV Input Bias urrent I IB T A = T high to T low na Output Impedance f = 0 Hz z o Input Impedance f = 0 Hz z i M Output Voltage ange L = 0 k L =.0 k L =.0 k, T A = T high to T low ± ±0 ±0 Input ommon Mode Voltage ange V I V V EE ±.5 ± 0 0 V V V EE V EE.5 V.5 V V V EE ommon Mode ejection S 0 k M db Power Supply urrent ( = 0) L = I, I EE ma Individual Output Shortircuit urrent (Note ) I S ±0 ±0 ±5 ±0 ±0 ±5 ma Positive Power Supply ejection atio PS V/V Negative Power Supply ejection atio PS V/V Average Temperature oefficient of Input Offset urrent T A = T high to T low Average Temperature oefficient of Input Offset Voltage T A = T high to T low Power Bandwidth A V =, L = 0 k = 0 V(pp), THD = 5% SmallSignal Bandwidth A V =, L = 0 k = 50 mv I IO / T pa/ V IO / T 0 0 V/ BWp khz BW.0.0 MHz Slew ate A V =, V i = 0 V to 0 V S V/ s ise Time A V =, L = 0 k = 50 mv t TLH s Fall Time A V =, L = 0 k = 50 mv t TLH s Overshoot A V =, L = 0 k = 50 mv os 0 0 % Phase Margin A V =, L =.0 k, = 00 pf m rossover Distortion (V in = 0 mvpp,v out =.0 Vpp, f = 0 khz). M0: T low = 0, T high = 85, : T low = 0, T high = 70. Not to exceed maximum package power dissipation..0.0 %
4 , M0 ELETIAL HAATEISTIS ( = 5.0 V, V EE = GND, T A = 5, unless otherwise noted.) haracteristic Symbol M0 Min Typ Max Min Typ Max Input Offset Voltage V IO mv Input Offset urrent I IO na Input Bias urrent I IB na Large Signal Open Loop Voltage Gain L =.0 k Unit A VOL V/mV Power Supply ejection atio PS V/V Output Voltage ange (Note 5) V pp L = 0 k, = 5.0 V L = 0 k, V Power Supply urrent I ma hannel Separation f =.0 khz to 0 khz (Input eferenced) 5. Output will swing to ground with a 0 k pull down resistor. S 0 0 db Output Bias ircuitry ommon to Four Amplifiers Q0 Q9 Q8 Q7 Q6 Q7 Q 5.0 pf k 0 k Q8 Q9 Q Q5 Inputs Q Q.0 k Q9 Q 5 Q Q5 Q6 7 k Q Q Q0 Q Q Q Q5 60 k Q7 Q8 Q0. k V EE (GND) Figure. epresentative Schematic Diagram (/ of ircuit Shown)
5 , M0 IUIT DESIPTION 5.0 V/DIV 0 s/div Figure. Inverter Pulse esponse The /0 is made using four internally compensated, twostage operational amplifiers. The first stage of each consists of differential input device Q and Q with input buffer transistors Q5 and Q and the differential to single ended converter Q and Q. The first stage performs not only the first stage gain function but also performs the level shifting and Transconductance reduction functions. By reducing the Transconductance, a smaller compensation capacitor (only 5.0 pf) can be employed, thus saving chip area. The Transconductance reduction is accomplished by splitting the collectors of Q and Q. Another feature of this input stage is that the input common mode range can include the negative supply or ground, in single supply operation, without saturating either the input devices or the differential to singleended converter. The second stage consists of a standard current source load amplifier stage. The output stage is unique because it allows the output to swing to ground in single supply operation and yet does not exhibit any crossover distortion in split supply operation. This is possible because lass AB operation is utilized. Each amplifier is biased from an internal voltage regulator which has a low temperature coefficient, thus giving each amplifier good temperature characteristics as well as excellent power supply rejection. 50 mv/div 0.5 V/DIV A V = 00 *Note lass A B output stage produces distortion less sinewave. 50 s/div A VOL, LAGE SIGNAL OPEN LOOP VOLTAGE GAIN (db) = 5 V V EE = 5 V T A = k 0 k 00 k.0 M f, FEQUENY (Hz) Figure. Sine Wave esponse Figure. Open Loop Frequency esponse, OUTPUT VOLTAGE (V pp ) T A = k 0 k 00 k.0 M f, FEQUENY (Hz) 5 V 5 V 0 k, OUTPUT VOLTAGE ANGE (V pp) T A = AND (V EE ), POWE SUPPLY VOLTAGES (V) Figure 5. Power Bandwidth Figure 6. Output Swing versus Supply Voltage 5
6 , M0 IIB, INPUT BIAS UENT (na) = 5 V V EE = 5 V T A = 5 I IB, INPUT BIAS UENT (na) T, TEMPEATUE ( ) Figure 7. Input Bias urrent versus Temperature AND (V EE ), POWE SUPPLY VOLTAGES (V) Figure 8. Input Bias urrent versus Supply Voltage 0 k 0 k / = = 0 k 50 k 5.0 k N9 / f = V o = N9 For: f o =.0 khz = 6 k = 0.0 F Figure 9. Voltage eference Figure 0. Wien Bridge Oscillator e e / a b / e o = ( a b) (e e ) / e o V in V inl = V inh = V h = / (L ) (H ) (H L ) Hysteresis H L V inl V inh Figure. High Impedance Differential Amplifier Figure. omparator with Hysteresis 6
7 , M0 00 k f o = V in / / 00 k / = Q = T BP = T N = 0 = = 60 k = 0.00 F =.6 M =.6 M =.6 M For: f oq T BP T N =.0 khz = 0 = = Where: T BP T N Bandpass Output = center frequency gain = passband notch gain / Figure. BiQuad Filter Notch Output = Triangle Wave Output 00 k / 75 k / 00 k V ref f = f f if = Figure. Function Generator Square Wave Output V in / Given: f o = center frequency A(f o ) = gain at center frequency hoose value f o, = Then: = Q = = f o A(f o ) Figure 5. Multiple Feedback Bandpass Filter O O = 0 5 Q 5 O For less than 0% error from operational amplifier o f o < 0. BW where f o and BW are expressed in Hz. If source impedance varies, filter may be preceded with voltage follower buffer to stabilize filter parameters. 7
8 , M0 PAKAGE DIMENSIONS SOI ASE 75A0 ISSUE H T SEATING PLANE G A 8 D PL 7 B K P 7 PL 0.5 (0.00) M T B S A S 0.5 (0.00) M B M NOTES:. DIMENSIONING AND TOLEANING PE ANSI Y.5M, 98.. ONTOLLING DIMENSION: MILLIMETE.. DIMENSIONS A AND B DO NOT INLUDE MOLD POTUSION.. MAXIMUM MOLD POTUSION 0.5 (0.006) PE SIDE. 5. DIMENSION D DOES NOT INLUDE DAMBA POTUSION. ALLOWABLE DAMBA POTUSION SHALL BE 0.7 (0.005) TOTAL IN EXESS OF THE D DIMENSION AT MAXIMUM MATEIAL ONDITION. MILLIMETES INHES X 5 F DIM MIN MAX MIN MAX A B D M J F G.7 BS BS J K M P SOLDEING FOOTPINT* X X 7.0 X.5.7 PITH DIMENSIONS: MILLIMETES *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques eference Manual, SOLDEM/D. 8
9 , M0 PAKAGE DIMENSIONS PDIP ASE 6606 ISSUE P 8 7 B NOTES:. DIMENSIONING AND TOLEANING PE ANSI Y.5M, 98.. ONTOLLING DIMENSION: INH.. DIMENSION L TO ENTE OF LEADS WHEN FOMED PAALLEL.. DIMENSION B DOES NOT INLUDE MOLD FLASH. 5. OUNDED ONES OPTIONAL. T N SEATING PLANE A INHES MILLIMETES DIM MIN MAX MIN MAX A B F L D F G 0.00 BS.5 BS H J K K J L M 0 0 H G D PL M N (0.005) M ON Semiconductor and are registered trademarks of Semiconductor omponents Industries, LL (SILL). SILL reserves the right to make changes without further notice to any products herein. SILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SILL does not convey any license under its patent rights nor the rights of others. SILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SILL product could create a situation where personal injury or death may occur. Should Buyer purchase or use SILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold SILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SILL was negligent regarding the design or manufacture of the part. SILL is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIATION ODEING INFOMATION LITEATUE FULFILLMENT: Literature Distribution enter for ON Semiconductor P.O. Box 56, Denver, olorado 807 USA Phone: or Toll Free USA/anada Fax: or Toll Free USA/anada orderlit@onsemi.com N. American Technical Support: Toll Free USA/anada Europe, Middle East and Africa Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales epresentative /D
MC3403, MC3303. Single Supply Quad Operational Amplifiers
, M3303 Single Supply Quad Operational Amplifiers The is a low cost, quad operational amplifier with true differential inputs. The device has electrical characteristics similar to the popular M74. However,
More informationLM358S, LM2904S. Single Supply Dual Operational Amplifiers
, LM904S Single Supply Dual Operational Amplifiers Utilizing the circuit designs perfected for Quad Operational Amplifiers, these dual operational amplifiers feature low power drain, a common mode input
More informationMARKING DIAGRAMS Split Supplies Single Supply PIN CONNECTIONS MAXIMUM RATINGS ORDERING INFORMATION SO 14 D SUFFIX CASE 751A
The MC3403 is a low cost, quad operational amplifier with true differential inputs. The device has electrical characteristics similar to the popular MC1741C. However, the MC3403 has several distinct advantages
More informationQUAD DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS
Order this document by /D The series are lowcost, quad operational amplifiers with true differential inputs. They have several distinct advantages over standard operational amplifier types in single supply
More informationMC GHz Low Power Prescaler With Stand-By Mode
2.5 GHz Low Power Prescaler With Stand-By Mode Description The M1295 is a single modulus prescaler for low power frequency division of a 2.5 GHz high frequency input signal. MOSAI V technology is utilized
More informationDUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS
Order this document by /D Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature ) low power drain, ) a common mode input
More informationMC3403, MC3303. Single Supply Quad Operational Amplifiers
MC0, MC0 Single Supply Quad Operational Amplifiers The MC0 is a low cost, quad operational amplifier with true differential inputs. The device has electrical characteristics similar to the popular MC7C.
More informationMARKING DIAGRAMS PIN CONNECTIONS ORDERING INFORMATION MC3x58P1 AWL YYWW PDIP 8 P1 SUFFIX CASE 626 SO 8 D SUFFIX CASE 751 3x58 ALYW
Utilizing the circuit designs perfected for the quad operational amplifiers, these dual operational amplifiers feature: low power drain, a common mode input voltage range extending to ground/v EE, and
More informationMM3Z2V4T1 SERIES. Zener Voltage Regulators. 200 mw SOD 323 Surface Mount
Zener Voltage Regulators mw Surface Mount This series of Zener diodes is packaged in a surface mount package that has a power dissipation of mw. They are designed to provide voltage regulation protection
More informationP SUFFIX CASE 646 Single Supply Split Supplies SO-14 D SUFFIX CASE 751A PIN CONNECTIONS
Dual Operational Amplifier and Dual Comparator The MC05 contains two differential-input operational amplifiers and two comparators, each set capable of single supply operation. This operational amplifier-comparator
More informationMAXIMUM RATINGS (T A = +25 C, unless otherwise noted.) PIN CONNECTIONS
The LM324 series are low cost, quad operational amplifiers with true differential inputs. They have several distinct advantages over standard operational amplifier types in single supply applications.
More informationMARKING DIAGRAMS ORDERING INFORMATION Figure 1. Representative Schematic Diagram (Each Amplifier) DUAL MC33078P
The MC33078/9 series is a family of high quality monolithic amplifiers employing Bipolar technology with innovative high performance concepts for quality audio and data signal processing applications.
More informationPIN CONNECTIONS
Utilizing the circuit designs perfected for Quad Operational Amplifiers, these dual operational amplifiers feature low power drain, a common mode input voltage range extending to ground/v EE, and single
More informationMARKING DIAGRAMS ORDERING INFORMATION DUAL MC33272AP AWL YYWW PDIP 8 P SUFFIX CASE 626 SO 8 D SUFFIX CASE ALYWA QUAD
The MC33272/74 series of monolithic operational amplifiers are quality fabricated with innovative Bipolar design concepts. This dual and quad operational amplifier series incorporates Bipolar inputs along
More informationLM339S, LM2901S. Single Supply Quad Comparators
LM339S, LM290S Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer and industrial electronic applications. Features
More informationMC Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier
MC3334 Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier The MC3334 is a monolithic bipolar operational amplifier. This low voltage rail to rail amplifier has both a rail to rail input and output
More informationTCA0372, TCA0372B. 1.0 A Output Current, Dual Power Operational Amplifiers
.0 A Output Current, Dual Power Operational Amplifiers The TCA0372 is a monolithic circuit intended for use as a power operational amplifier in a wide range of applications, including servo amplifiers
More informationMC33078, MC MARKING DIAGRAMS. Features
MC337, MC3379 Low Noise Dual/Quad Operational Amplifiers The MC337/9 series is a family of high quality monolithic amplifiers employing Bipolar technology with innovative high performance concepts for
More informationLM321. Single Channel Operational Amplifier
Single Channel Operational Amplifier LM32 is a general purpose, single channel op amp with internal compensation and a true differential input stage. This op amp features a wide supply voltage ranging
More informationNSS20601CF8T1G 20 V, 8.0 A, Low V CE(sat) NPN Transistor
NSSF8TG V, 8. A, Low V E(sat) NPN Transistor ON Semiconductor's e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and
More informationMBRM110ET3G NRVBM110ET1G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package
MBM11ET1G, NVBM11ET1G Surface Mount Schottky Power ectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces
More informationNUF4211MNT1G. 4-Channel EMI Filter with Integrated ESD Protection
4-hannel EMI Filter with Integrated ESD Protection The NUF4211MN is a four channel ( R ) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 100 and = 8.5 pf deliver
More informationPIN CONNECTIONS ORDERING INFORMATION PIN CONNECTIONS P SUFFIX PLASTIC PACKAGE CASE 626 D SUFFIX PLASTIC PACKAGE CASE 751 (SO 8) Inputs P SUFFIX
Quality bipolar fabrication with innovative design concepts are employed for the MC33181/2/4, MC34181/2/4 series of monolithic operational amplifiers. This JFET input series of operational amplifiers operates
More informationMC Micropower Undervoltage Sensing Circuits MICROPOWER UNDERVOLTAGE SENSING CIRCUITS SEMICONDUCTOR TECHNICAL DATA
Micropower Undervoltage Sensing ircuits The M33464 series are micropower undervoltage sensing circuits that are specifically designed for use with battery powered microprocessor based systems, where extended
More informationORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet.
The MC3320/2/4 family of operational amplifiers provide railtorail operation on both the input and output. The inputs can be driven as high as 200 mv beyond the supply rails without phase reversal on the
More informationNCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier
NCS, NCSA. MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier The NCS operational amplifier provides rail to rail output operation. The output can swing within 7 mv to the positive rail and mv
More informationNSS40500UW3T2G. 40 V, 6.0 A, Low V CE(sat) PNP Transistor. 40 VOLTS 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 65 m
4, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current
More informationMC1455, MC1455B, NCV1455B. Timers
M, MB, NVB Timers The M monolithic timing circuit is a highly stable controller capable of producing accurate time delays or oscillation. Additional terminals are provided for triggering or resetting if
More informationNCP5504, NCV ma Dual Output Low Dropout Linear Regulator
25 ma Dual Output Low Dropout Linear Regulator The NCP554/NCV554 are dual output low dropout linear regulators with 2.% accuracy over the operating temperature range. They feature a fixed output voltage
More informationBD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
More informationMJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
More informationLOW POWER JFET INPUT OPERATIONAL AMPLIFIERS
These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow
More informationNCN1154. DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability
DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable systems
More informationMJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
More informationLA6324N. Overview. Features. Specitications. Monolithic Linear IC High-Performance Quad Operational Amplifier
Ordering number : ENN274 L6324N Monolithic Linear I HighPerformance Quad Operational mplifier http://onsemi.com Overview The L6324 consists of four independent, highperformance, internally phase compensated
More information12 VOLTS, 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 45 m. MAXIMUM RATINGS (T A = 25 C) MARKING DIAGRAM
NSS16F8T1G 1, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high
More informationBC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
More informationNCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output
Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output
More informationMC3488A. Dual EIA 423/EIA 232D Line Driver
Dual EIA423/EIA232D Line Driver The MC34A dual is singleended line driver has been designed to satisfy the requirements of EIA standards EIA423 and EIA232D, as well as CCITT X.26, X.2 and Federal Standard
More informationNCN1154. USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability
USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable
More informationMJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationNSS35200CF8T1G. 35 V, 7 A, Low V CE(sat) PNP Transistor. 35 VOLTS 7.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 78 m
NSSF8T1G V, 7 A, Low V E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and
More informationPZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
More informationNCS MHz Voltage Feedback Op Amp
75 MHz Voltage Feedback Op Amp NCS255 is a 75 MHz voltage feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The voltage feedback architecture
More informationMMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
More informationMMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
More informationNCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3
4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,
More informationMUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
More informationAudio Equipment Instrumentation and Control Circuits Telephone Channel Amplifiers Medical Equipment. Features PIN CONNECTIONS
NE3, SA3, SE3, NE3A, SA3A, SE3A Single Low Noise Operational Amplifier The NE/SA/SE3/3A are single high-performance low noise operational amplifiers. Compared to other operational amplifiers, such as TL3,
More informationBC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
More informationCS8183. Dual Micropower 200 ma Low Dropout Tracking Regulator/Line Driver
Dual Micropower ma Low Dropout Tracking Regulator/Line Driver The is a dual low dropout tracking regulator designed to provide adjustable buffered output voltages that closely track (±1 mv) the reference
More informationNCS2211. Low Distortion Audio Power Amplifier with Differential Output and Shutdown Mode
NS22 Low Distortion Audio Power Amplifier with Differential Output and Shutdown Mode Product Description The NS22 is a high performance, low distortion lass A/B audio amplifier. It is capable of delivering
More informationMMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
More informationNCP304A. Voltage Detector Series
Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where
More informationMBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
More informationNTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
More informationMPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
More informationMMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
More informationNCP A, Low Dropout Linear Regulator with Enhanced ESD Protection
3.0 A, Low Dropout Linear Regulator with Enhanced ESD Protection The NCP5667 is a high performance, low dropout linear regulator designed for high power applications that require up to 3.0 A current. A
More informationMPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45
More informationBC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
More informationNSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
More informationNTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
More informationP2I2305NZ. 3.3V 1:5 Clock Buffer
3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
More informationUMC2NT1, UMC3NT1, UMC5NT1
UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor
More informationMC34085BP HIGH PERFORMANCE JFET INPUT OPERATIONAL AMPLIFIERS
These devices are a new generation of high speed JFET input monolithic operational amplifiers. Innovative design concepts along with JFET technology provide wide gain bandwidth product and high slew rate.
More informationNGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
More informationMJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
More informationNTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
More informationMUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
More informationLOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS
Order this document by TL7/D These low noise JFET input operational amplifiers combine two stateoftheart analog technologies on a single monolithic integrated circuit. Each internally compensated operational
More informationMMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
More informationNVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
More informationNTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
More informationAdc. W W/ C T J, T stg 65 to C
Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =
More informationMBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
More informationMBRS1540T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.5 AMPERES, 40 VOLTS
MBS154T3 Surface Mount Schottky Power ectifier Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with
More informationMJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationBC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.
More informationBC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage
More informationDistributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
More informationNCP ma, 10 V, Low Dropout Regulator
15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage
More informationPCS2I2309NZ. 3.3 V 1:9 Clock Buffer
. V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The
More information2N4403 / MMBT4403 PNP General-Purpose Amplifier
2N443 / MMBT443 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 5 ma. EB TO-92 SOT-23 Mark:2T B E Figure. 2N443
More informationBC846, BC847, BC848. General Purpose Transistors. NPN Silicon
General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.
More informationMMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
More informationMUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
More informationNDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
More informationBC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon
BC856BWT1, SBC856BWT1, BC857BWT1, SBC857BWT1, BC858AWT1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2
More informationP3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device
3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device Functional Description P3P85R0A is a versatile, 3.3 V, LVCMOS, wide frequency range, TIMING SAFE Peak EMI reduction device. TIMING SAFE
More informationLM339, LM239, LM2901, LM2901V, NCV2901, MC3302. Single Supply Quad Comparators
LM339, LM239, LM290, LM290V, NCV290, MC3302 Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer, automotive,
More informationMJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ295G - PNP MJ296G - NPN Silicon Power Transistors The MJ295G and MJ296G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear
More informationNTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
More informationNTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
More informationNTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
More informationNGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
More informationNSTB1002DXV5T1G, NSTB1002DXV5T5G
NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
More informationMJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD () MJD7 () Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
More informationMJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
More informationMJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More information