arxiv:cond-mat/ v1 [cond-mat.mes-hall] 25 Oct 2005

Transcription

1 Acoustic charge trasport i -i- three termial device arxiv:cod-mat/51655v1 [cod-mat.mes-hall] 25 Oct 25 Marco Cecchii, Giorgio De Simoi, Vicezo Piazza, ad Fabio Beltram NEST-INFM ad Scuola Normale Superiore, I Pisa, Italy H. E. Beere ad D. A. Ritchie Cavedish Laboratory, Uiversity of Cambridge, Cambridge CB3 HE, Uited Kigdom Abstract We preset a ucovetioal approach to realize acoustic charge trasport devices that takes advatage from a origial iput regio geometry i place of stadard Ohmic iput cotacts. Our scheme is based o a -i- lateral juctio as electro ijector, a etched itrisic chael, a stadard Ohmic output cotact ad a pair of i-plae gates. We show that surface acoustic waves are able to pick up electros from a curret flowig through the -i- juctio ad steer them toward the output cotact. Acoustic charge trasport was studied as a fuctio of the ijector curret ad bias, the SAW power ad at various temperatures. The possibility to modulate the acoustoelectric curret by meas of lateral i-plae gates is also discussed. The mai advatage of our approach relies o the possibility to drive the -i- ijector by meas of both voltage or curret sources, thus allowig to sample ad process voltage ad curret sigals as well. PACS umbers: Electroic address: m.cecchii@ss.it 1

2 The itroductio of acoustic charge trasport (ACT) devices[1] brought true digital programmability to aalog sigal processig. ACT devices are widebad, operatig up to several GHz ad ca have digital programmability of hudreds of idividual taps[2]. Moreover, these devices are based o compoud semicoductor materials (i.e. GaAs) ad ca be easily itegrated with the existig techology. ACT devices are based o the trasport of charge i a piezoelectric semicoductor by meas of surface acoustic waves (SAWs)[3]. Lattice deformatios iduced by SAWs i a piezoelectric substrate are accompaied by potetial waves which ca trap electros i their miima ad drag them alog the SAW propagatio directio resultig i a et dc curret or voltage (the acoustoelectric effect)[4, 5, 6]. I ACT devices the SAW electric field buches electros together ito packets ad trasports them through a semicoductor chael. Typically, this is depleted from charge by top ad/or back gate electrodes, while electro packets are extracted from a udepleted regio of the semicoductor located beeath a ohmic iput cotact (IC)[7, 8]. A time-varyig electrical sigal applied to the IC produces a sequece of charge packets that travel through the device toward a ohmic output cotact (OC). The amout of charge i each packet varies depedig o the iput sigal itesity, makig this sequece represet a sample ready for digital processig. The described ACT device adds a time delay to the iput sigal, depedig o the legth of the chael. Top metallic electrodes alog the SAW path allows to modify the distributio of charge i the packets ad to process the iput sigal. I this letter we itroduce a alterative approach to realize ACT devices, based o a origial iput regio geometry. The device cosists of: i) a -i- lateral juctio as a electro ijector; ii) a etched itrisic chael; iii) a pair of i-plae gates; iv) a stadard Ohmic OC. As we shall show, SAWs ca collect electros from a curret flowig through the -i- juctio ad steer them toward the OC across the itrisic chael. The mai advatage of this geometry is the possibility to drive the -i- ijector by meas of both voltage or curret, thus allowig to sample ad process voltage or curret sigals as well. The device was fabricated startig from a -type modulatio-doped Al.3 Ga.7 As/GaAs heterostructure grow by molecular-beam epitaxy, cotaiig a two dimesioal electro gas (2DEG) withi a 3-m-wide GaAs quatum well embedded 9 m below the surface. The measured electro desity ad mobility after illumiatio at 1.5 K were cm 2 ad cm 2 /Vs, respectively. The heterostructure was processed ito mesas with 2

3 aealed -type Ni/AuGe/Ni/Au (1/18/1/1 m) Ohmic cotacts by stadard optical lithography, wet chemical etchig ad thermal evaporatio. The -i- lateral-juctio was fabricated accordig to the scheme of Fig. 1 (a). Two portios of the 2DEG (amed source ad drai ) were separated by a thi itrisic spacer (which we shall call the barrier i the followig) defied by electro beam lithography ad shallow ( 3 m) etchig of the surface. We observed that a 3-m etchig leads to QW depletio allowig to create itrisic regios withi the mesa. A 7-µm log itrisic regio ( the chael i the followig) defied by the same etchig step described above separates the -i- regio from a third electro reservoir (the collector.) A pair of lateral cotrol gates cosistig of portios of 2DEG were also fabricated to allow further cotrol o the collector curret [9]. Figure 1 (b) displays a scaig electro microscope image of the ijector ad gate regio. The source-drai separatio was chose of 25 m i order to have a breakdow voltage of approximately 1 V. Figure 1(c) shows the low temperature (T = 5 K) curret-voltage characteristics betwee the differet -regios (source, drai ad collector) after illumiatio. We observed a coductio threshold betwee source ad drai cotacts of.65 V, while the source-gate coductio threshold was foud to be much higher, owig to the larger distace betwee these electrodes. As expected, is egligible withi the explored rage of voltages. The observed asymmetry of the I-V curves show i Fig.1(c) does ot affect the device operatio ad was probably due to device ihomogeeities itroduced durig the wet etchig process. SAWs propagatig alog the ( 1 1) crystal directio were geerated by meas of a iterdigital trasducer (IDT) composed of 1 pairs of 8-µm-log Al figers with 1-µm periodicity ( 3 GHz resoace frequecy o GaAs). Trasducers were fabricated at a distace of 5 µm from the -i- ijector by electro-beam lithography. The IDT resoace frequecy was determied by measurig the power reflected by the IDT as a fuctio of the excitatio frequecy. The low temperature (T = 5 K) frequecy respose displayed a dip at GHz with a full width at half maximum (FWHM) of 2 MHz, cosistetly with the periodicity of the trasducer. We moitored by meas of a low-oise curret preamplifier i the presece of SAWs while ijectig a costat source-drai curret, I SD. The gates were left floatig ad the temperature was set at T = 5 K. Figure 2 (a) shows as a fuctio of the frequecy f rf 3

4 of the sigal applied to the IDT for I SD from -.15 µa to -.3 µa. A proouced curret peak, correspodig to electros gettig to the collector through the itrisic regio, was detected at the SAW excitatio frequecy for I SD <.15 µa. The height of the peak icreases by makig I SD more egative. The electro extractio efficiecy, defied as the fractio of I SD detected at the collector, also icreases [see the iset of Fig.2 (a)], reachig the value of 25% for I SD =.3µA. To study the SAW extractio efficiecy, was measured as a fuctio of the frequecy of the IDT excitatio sigal at fixed I SD at differet SAW power levels. We observed ACT for P rf dbm, where P rf is the power of the sigal applied to the trasducer. The electro extractio efficiecy icreases with P RF, reachig approximately the value of 32% at P rf = 1 dbm. Qualitatively aalogue behavior was obtaied by fixig the -i- ijector voltage, V SD, istead of the curret, demostratig the possibility to process both voltage ad curret sigals. By ivertig the sig of V SD, i. e. by biasig oe lead of the -i- ijector with positive voltage with respect to the groud ad maitaiig the other lead grouded, o ACT was observed. Ideed, this correspods to lowerig the coductio bad bottom of the barrier with respect to the chael. I this regime the SAW potetial is ot able to drive electros from the barrier to the chael. All the measuremets described above were carried out fromt = 5 K up to roomtemperature. The behavior of the device was essetially determied by the chage of the coductio threshold of the ijector juctio. This ideed progressively icreased up to uacceptable values (> 2 V) fort 12K. Low coductio threshold was recovered by further icreasig the temperature, but o ACT was observed i this high temperature regime. Fially, we aalyzed the effect of the lateral gates o ACT. By applyig egative voltages to the gates we expect that the chael available for electro trasfer to the collector become progressively arrower ad evetually piches off. The acoustoelectric curret toward the OC is thus expected to decrease ad evetually vaish at sufficietly large egative voltage. Figure 3 demostrates the modulatio of the ACT by meas of i-plae lateral gates. The collector curret was measured as a fuctio of the frequecy of the sigal applied to the IDT for several values of the gate voltage[1] ad for a fixed ijector curret (or bias). The resoace peak was observed to decrease for gate voltages more egative tha -.5 V. As 4

5 show i the iset of Fig.3, this effect saturates at 1 V. Withi this rage of voltage the peak curret was reduced by 82%. We could ot completely suppress ACT because more egative gate voltages led to curret leakage toward the -electrodes of the ijector. Optimizatio of the gate-ijector geometry ca prevet curret leakage ad allow the use of the gates over a wider rage of voltage. I coclusio, we demostrated ACT i a origial device cosistig i a lateral -i- ijector juctio, a etched itrisic chael, a output ohmic cotact ad a pair of i-plae gates. We showed that SAWs ca extract electros from a curret flowig through the -i- ijector ad trasport them toward the output cotact. ACT was fully characterized as a fuctio of the ijector curret ad bias, the SAW power ad at various temperature from 5 K to room temperature. Fially, we demostrated the possibility to modulate the acoustoelectric curret by meas of lateral i-plae gates. This work was supported i part by the Europea Commissio through the IP SECOQC withi FP6 ad by MIUR withi FISR Naodispositivi ottici a pochi fotoi. 5

6 [1] M. J. Hoskis, H. Morkoç, ad B. J. Husiger, Appl. Phys. Lett. 41, 332 (1982). [2] F. Guediri, R. L. Marti, B. J. Husiger, ad F. M. Fliegel, Proc. IEEE Ultrasoic Symp. p. 11 (1987). [3] T. Edjeou, T. Gryba, V. Zhag, V. Sadaue, ad J. E. Lefebvre, Solid State Electro. 44, 1127 (2). [4] A. Essliger, R. W. Wikler, C. Rocke, A. Wixforth, J. P. Kotthaus, H. Nickel, W. Schlapp, ad R. Lsch, Surf. Sci. 35, 83 (1994). [5] A. Essliger, A. Wixforth, R. W. Wikler, J. P. Kotthaus, H. Nickel, W. Schlapp, ad R. Lsch, Solid State Commu. 84, 939 (1992). [6] J. W. M. Campbell, F. Guillo, M. D Iorio, M. Buchaa, ad R. J. Stoer, Solid State Commu. 84, 735 (1992). [7] R. L. Miller, C. E. Nothick, ad D. S. Bailey, Acoustic charge trasport: device techology ad applicatios (Artech House, 1992). [8] F. E. Ratolojaahary, T. Gryba, ad F. L. Razafidramisa, IEE P-Circ. Dev. Syst. 151, 322 (24). [9] K. Gloos, P. Utko, J. B. Hase, ad P. E. Lidelof, Phys. Rev. B 7, (24). [1] Both gates were always biased at the same voltage. 6

7 (a) IDT drai source gate gate i collector (b) 2 µm i I (A) (c) Source - Drai Source - Collector Source - Gate Bias (V) FIG. 1: (a) Schematic view of the device. (b) Scaig electro microscope image of the -i- ijector regio. (b) Source-drai (dashed lie), source-collector (solid lie) ad source-gate (dotted lie) curret-voltage characteristics. 7

8 (A) (A) (a) (b) 6 4 T = 5 K P rf = 8 dbm -.3 µa -.27 µa -.24 µa -.21 µa -.15 µa T = 5 K I SD = -.25 µa 1 dbm 8 dbm 6 dbm dbm (%) (%) SAW I SD i I SD (µa) P rf (dbm) Frequecy (GHz) FIG. 2: (a) Collector curret as a fuctio of the frequecy of the sigal applied to the IDT for several values of the source-drai curret at T = 5 K. The radiofrequecy power was 8 dbm. Iset: measuremet scheme ad electro extractio efficiecy as a fuctio of the source-drai curret at T = 5 K. The frequecy of sigal applied to the IDT was GHz ad its power was 8 dbm. (b) Collector curret as a fuctio of the frequecy of the sigal applied to the IDT for several values of the power of the radiofrequecy sigal at T = 5 K ad for a fixed value source-drai curret I SD = -.25 µa. Iset: electro extractio efficiecy as a fuctio of the power of the radiofrequecy sigal at T = 5 K. The frequecy of the sigal applied to the IDT ad the source-drai curret were GHz ad -.25 µa respectively. 8

9 3 T = 5 K P rf = 12 dbm Ijectio Bias = -2 V V -.56 V -.67 V -.94 V (A) 2 1 (A) V G (V) Frequecy (GHz) FIG. 3: Collector curret as a fuctio of the frequecy of the sigal applied to the IDT for several values of the gate voltage at T = 5 K. The radiofrequecy power was 12 dbm ad the -i- ijector was biased with -2 V. Iset: collector curret as a fuctio of the gate voltage at T = 5 K. The frequecy ad power of sigal applied to the IDT were GHz ad 12 dbm respectively. The ijectio bias was -2 V. 9