High Performance Visible-Blind Ultraviolet Photodetector Based on
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1 Supplementary Information High Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction Jingjing Yu a,b, Kashif Javaid b,c, Lingyan Liang b,*, Weihua Wu a,b, Yu Liang b, Anran Song b, Hongliang Zhang b, Wen Shi a, Ting-Chang Chang d and Hongtao Cao b,* a School of Materials Science and Engineering, Shanghai University, Baoshan District, Shanghai , China b Key Laboratory of Graphene Technologies and Applications of Zhejiang Province & Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo , People s Republic of China c Department of Physics, Government College University Faisalabad, Allama Iqbal Road, Faisalabad, Pakistan d Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan * lly@nimte.ac.cn & h_cao@nimte.ac.cn S1
2 Figure S1. The (αhν) 2 vs. photo energy (hν) spectra for the IGZO, where α is the absorption coefficient. The optical band gap of IGZO was determined to be ~ 3.5 ev. S2
3 Figure S2. (a), (b) The ohmic contact characteristics for Ag/PEDOT:PSS and ITO/IGZO. S3
4 Figure S3. The transfer characteristics of the IGZO, SnO x /IGZO, PEDOT:PSS /SnO x /IGZO, and PEDOT:PSS/IGZO transistors. Figure S3 presents the transfer curves of IGZO, SnO x /IGZO, PEDOT:PSS/SnO x /IGZO, and PEDOT:PSS/IGZO phototransistors in the dark. The gate leakage current of the IGZO TFT is approximately A, and the other decorated IGZO TFTs have the similar gate leakage current. The variations in electrical performance of the devices are listed in Table S1 in detail. The threshold voltage (V th ) was shifted negatively by 13.2 V after depositing a SnO x thin film on the back channel of the IGZO TFT, revealing the carrier aggrandizement in the channel which is in line with the previous report. 1 After further covering a PEDOT:PSS layer, however, the V th rebounded by 8.1 V, implying distinct decrease of the electron density in the n-type channel. This rebound suggests that the transfer of electrons from the n-type layer (IGZO) into the p-type one (PEDOT:PSS), 2 a hint for the formation of p-n junction in the PEDOT:PSS/SnO x /IGZO stack. In contrast, the V th of the PEDOT:PSS/IGZO TFT was shifted negatively by 1.2 V compared to the original IGZO TFT, implying no p-n junction formed between the PEDOT:PSS and IGZO layers. These results indicate that ultrathin SnO x layer plays a very important role in the formation of p-n S4
5 junction. S5
6 Figure S4. (a), (b), (c) The output characteristics for the IGZO, SnO x /IGZO and PEDOT:PSS/ SnO x /IGZO TFT. S6
7 Table S1.The device performances of IGZO, SnO x /IGZO, PEDOT:PSS/SnO x /IGZO and PEDOT:PSS/IGZO phototransistors. Annealing TFT V th (V) V on (V) I on /I off ( 10 7 ) u sat ( cm 2 /V.s) S.S (V/dec) IGZO SnO x /IGZO PEDOT:PSS/SnO x /IGZO PEDOT:PSS/IGZO a Note:V th, threshold voltage; V on, turn-on voltage; I on /I off, on-off ratio of the current; u sat, saturation carrier mobility; S.S, subthreshold swing. S7
8 Figure S5. (a), (b) The output characteristics of IGZO and PEDOT:PSS/SnO x /IGZO TFT under different wavelengths from visible to UV light with a gate voltage of 0 V. (c), (d) The output characteristics of IGZO and PEDOT:PSS/SnO x /IGZO TFT at different gate voltages under a UV light of 340 nm. Figure S5 (a), (b) present present the output characteristics under different wavelength at V g =0 V for IGZO and PEDOT:PSS/SnO x /IGZO TFT. It can be clearly seen that the photoresponse of the PEDOT:PSS/SnO x /IGZO TFT is prominently higher than that of the IGZO TFT, especially in the UV region. In particular, the maximum drain current of the IGZO TFT is about 0.2 pa at 320 nm (V DS = 20 V), while the I DS of S8
9 PEDOT:PSS/SnO x /IGZO TFT is changing from 0.77 nm to nm, at least five orders of magnitude larger than that of IGZO TFT. The output characteristics at different gate voltages under 340 nm for IGZO and PEDOT:PSS/SnO x /IGZO TFT are shown in Figure S5 (c), (d). The drain current of PEDOT:PSS/SnO x /IGZO TFT is larger than that of the IGZO TFT. At the saturation region, for example, the I DS of IGZO TFT is increased from na (V GS = -5 V) to 11.3 µa (V GS = 20 V), while that of PEDOT:PSS/SnO x /IGZO TFT is changed from 2.1 na to 58.7 µa accordingly. S9
10 Figure S6. The photocurrent as a function of time under a light pulse (350 nm, 0.5 s) at different source-drain voltage. S10
11 Figure S7. The absorption spectra of the IGZO, PEDOT:PSS, PEDOT:PSS/IGZO and PEDOT:PSS/SnO x /IGZO film. S11
12 Figure S8. The transfer characteristics of (a) IGZO and PEDOT:PSS/IGZO TFT in the dark and under UV-light illumination. (b)the photocurrent of IGZO and PEDOT:PSS/IGZO TFT in the off-current region as a function of gate voltage. It is apparent that the photocurrent of the PEDOT:PSS/IGZO TFT is lower than that of the bare IGZO TFT in the off-current region in Figure S8. It s found that the PEDOT:PSS/IGZO and PEDOT:PSS/SnO x /IGZO layers indeed have higher absorption than IGZO and PEDOT:PSS individual film in the UV region, as seen the absorption spectra measured by a spectroscopic ellipsometer in Figure S7. However, the photoresponse of the PEDOT:PSS/IGZO device with the highest UV light absorption, is even lower than that of the bare IGZO device (shown in Figure S8), revealing the enhanced absorption is not the critical factor to govern the photoresponse properties of the hybrid device. S12
13 Figure S9. The UPS spectra of (a) IGZO film (b) SnO x /IGZO film, and (c) PEDOT:PSS film. The UPS measurements were made with a He I (21.22 ev) excitation line and a reverse bias of 7.55 V was applied on the samples. Moreover the Au Fermi edge was taken as a reference. As shown in Figure S9, the position of the secondary electron cutoff of each spectrum was determined by extrapolation to the baseline of a linear fit of the middle 60% of the data points making up the cutoff region and the Fermi levels of all the films were adjusted to 21.2 ev through applying a bias voltage. Therefore the work functions of the S13
14 three different films can be obtained through the expression hυ φ = Efermi Ecutoff, 3 where hν is the energy of monochromated He (I) source radiation (21.22eV), Φ is the work function, E fermi is the Fermi levels of 21.2 ev, E cutoff is the secondary electron cutoff and the obtained work functions of IGZO, SnO x /IGZO, and PEDOT:PSS film are 4.40, 4.56 and 4.90 ev, respectively. S14
15 Figure S10. The photoresponsivity of the PEDOT:PSS/SnO x /IGZO TFT with different thicknesses of the SnO x films under UV light. The photoresponse properties of the phototransistors decorated with SnO x at different thickness was investigated in Figure S10. As we can see, the device with 8 nm SnO x interlayer shows highlighted photoresponsivity. It is speculated that, a large amount of surface states on the bare IGZO would act as electron trap, and too thin SnO x film could not cover the whole back channel surface, not enough to modify the surface states. When the SnO x interlayer is too thick, the built-in electrical field would be attenuated along the thickness, unable to result in prominent photoresponse properties. S15
16 Figure S11. The variation of photocurrent as a function of power densities of 450 nm. S16
17 References (1) Wang, M.; Liang, L. l.; Luo, H.; Zhang, S. N.; Zhang, H. L.; Javaid, K.; Cao, H. T., Threshold Voltage Tuning in a-igzo TFTs With Ultrathin SnO x Capping Layer and Application to Depletion-Load Inverter. Ieee Electron Dev. Lett. 2016, 37, (2) Zan, H.W.; Chen, W.T.; Hsueh, H.W.; Kao, S.C.; Ku, M.C.; Tsai, C.C.; Meng, H.F. Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer. Appl. Phys. Lett. 2010, 97, (3) Li, X. X.; Liang, L. Y.; Cao, H. T.; Qin, R. F.; Zhang, H. L.; Gao, J. H.; Zhuge, F. Determination of some basic physical parameters of SnO based on SnO/Si pn heterojunctions. Appl. Phys. Lett. 2015, 106, S17
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