Index. l l-czochralski approach, 69

Transcription

1 Index l l-czochralski approach, D interconnection routing, 68 2-D microcantilevers, 327 2G strained Si MOSFET, D integration, 68 3D integration of Nanowires, D MEMS, D microbeams, D microcantilevers, 377 3D structure, 142 3D Volmer-Weber type growth, T-SRAM, 145 A Accumulation-mode pi-gate transistor, 180 Acoustic phonon confinement, 172 Acoustic phonon-dominated scattering, 309 Ambipolar transport, 224 Anodization process, 51 Anti-reflection coating, 363 B Back bias, 164 Ballistic mobility, 314 Ballistic mobility, 242 Ballistic transport, 227, 230 Ballisticity, 125, 128 Beyond-CMOS devices, 123 Biaxially strained devices, 283 Biaxially strained triple gate devices, 278 Bio particles, 319 Biochip, 351 Bioliquid cell, 351 Biosensors, 347 Bolometers, 383 Boltzmann transport equation, 219 Bovine serum albumin, 352 C Capacitance plateau, 325 Capacitor-less 1T-DRAM, 134 Carbon nanotube field-effect transistors, 216 Carbon nanotubes, 216 Centroid of the inversion charge, 158 Channel doping, 156 Charge centroid, 329, 332 CMOS circuits, 111 CMOS ICs, 1 CMOS technologies, 92 CMOS technology, 4 CMOS-MEMS, 357 CNT structures, 133 Coaxially-gated CNTFET, 221 Compliance approach, 48 Confinement effective mass, 170 Contact etch-stop layer, 165 Coulomb, 283 blockade, 253 blockade oscillations, 254 blockade phenomena, 252 Coulomb scattering,

2 444 Index C (cont.) Coupled MOS-SET, 257 CPW line, 106, 113 CPW transmission line, 106 Cut-off frequencies, 105 Cut-off frequency, 99 D Deep Reactive Ion Etching, 356 Density of state, 202 Deoxidation, 60 DG mode, 332 DG-FinDRAMs, 134 DG-MOSFET, 229 DGSOI, 174 DGSOI devices, 178 DIBL, 190 Digital substrate noise, 110, 111 Discretized Hamiltonian depends, 178 Dopant fluctuations, 169 Double etch scheme, 147 Double gate transistors, 417 Double-gate MOSFET, 128 Drain Induced Barrier Lowering, 158 DRAM, 327 DRIE, 356 Drift-diffusion mobility, 315 Dynamic performance, 161 Dynamic Threshold MOS, 271 E Effective mobility, 328 Effective oxide thickness, 25, 287 Electron conduction band tunneling, 221 Electron-phonon interaction, 239 Electrostatic Integrity, 191 Electrostatics, 156, 162 Epitaxial lateral overgrowth, 21 Equivalent oxide thickness, 324 EVB tunneling, 295 Excimer laser crystallization, 69 Extrinsic diffusivity coefficient, 10 Extrinsic transconductance, 98 F Fast Coupled Mode Space, 203 FD SOI MOSFET, 324 FD-SOI devices, 311 FD-SOI MOSFET, 269 FDSOI transistor, 159 Fermi Golden Rule, 182 Ferro-electric FET, 202 Film thickness, 159, 163 FinFET, 19, 96, 99, 134, 299 tri-gate, 274 FinFlash, 135 Finite element analysis simulations, 367 FinTFTs, 69 Flash lamp annealing, 10 Floating body cells, 134 Floating body effects, 256 Front-gate split C-V measurements, 325 Full potential of SOI technology, 169 Fully Depleted, 268 Fully-depleted SOI MOSFET, 323 G GAA transistors, 308 GAA-Gate All Around, 128 Gate induced floating body effect, 273 Gate workfunction, 157, 158 Gate-to-channel split, 308 Gate-to-channel tunneling current, 333 GeOI photodetectors, 18 GeOI substrates, 11 Germanium on Quartz, 22 Germanium on sapphire, 22 Germanium-on-insulator, 1 GHz range, 92 Global effective mobility, 319 Global straining technique, 303 GR fluctuations, 288 Graded-Channel SOI MOSFET, 270 Graphene, 194 Ground-plane, 154 H Hafnium dioxide, 6 Harmonic distortion, 113 High resistivity silicon, 92 High-k, 311 High-k gate dielectric, 92 High-k gate stack, 311 High-k layer, 304 Hole mobility, 178 I I-MOS, 202 Inelastic scattering, 246 Interlayer dielectrics, 68 Intra-subband acoustic phonons, 219 Inversion-layer centroid, 331

3 Index 445 Inversion-mode pi-gate MOSFET, 189 Ion beam induced epitaxial crystallisation, 8 Irreversible plastic, 49 J Junctionless gated resistor, 186 Junctionless pi-gate device, 189 Junctionless transistor, 186 Model of Gibson and Ashby, 50 Modulated Barrier Resonant Tunneling effect, 202 MOS-SET, 257 Multi-bridge-channel MOSFET, 128 Multi-channel thin film MOSFET, 123 Multi-gate MOSFET, 126 Multiple Gate Field Effect Transistors, 277 Multi-Users Multi-Chips, 357 K Kubo-Greenwood formula, 170 L Lab-on-chip, 351 Lateral crystallisation proceeds, 20 Lattice mismatches, 47 Lectron backscattered diffraction, 76 Lift-off process, 72 Lightly doped drain, 95 Lim-Fossum model, 326 Line edge roughness, 147 Line width roughness, 147 Linear kink effect, 273 Longitudinal confinement, 207 Lorentzian fluctuations Back-Gate-Induced, 287 Linear Kink Effect, 287 Low Schottky barrier contacts, 96 Low-field mobility mobility, 247 Low-temperature direct wafer bonding, 32 LPCVD, 72 LPCVD-deposition, 108 LPE germanium, 18 M Mathiessen rule, 318 Matthiessen-rule-like expression, 314 Meier-Wingreen formalism, 240 Metal-induced lateral crystallization, 68 Metallic SET, 257 Metal-Oxide-Semiconductor Field-Effect-Transistors, 287 Metal-Oxide-Semiconductor Single Electron Transistor, 251 Metamorphic growth, 48 Micro-Electro-Mechanical Systems, 356 Microfluidic biochips, 345 Microheater, 371 Midgap interface state density, 5 MOCVD, 10 N Nano-biosensors, 361 Nanochip, 344 Nano-interdigitated arrays, 358 Nanoribbons, 70, 76, 195 Nanotubes armchair-type, 218 zigzag-type, 218 Nanowire, 251, 252, 343 Nanowire FET, 238 Nanowire field effect transistors, 251 Nanowire-nFET, 124 NEMS, 377 nida capacitance sensors, 358 nida-gate, 359 nida-gate MOSFET, 358 Nitrogen radical activated samples, 35 Noise Generation-Recombination, 288 McWhorter, 291 Nyquist, 288 Non volatile SRAM, 136 Non-equilibrium Green s function, 217 Non-translational invariant movement, 207 Nuclear Reaction Analysis, 8 Null transverse field condition, 157 NW FET, 343, 345 NW sensors, 344 O Orientation effects, 175 Oswald Ripening Mechanism, 40 P Paramorphic approach, 48 Partially Depleted, 268 PECVD, 17 Performance, 173 PH-limited, 247 Phonon scattering, 193 Phonon scattering, 172, 173

4 446 Index P (cont.) Phonon scattering rate, 173 Piezoresistor, 385 PIN diode, 363 Plasma Enhanced Chemical Vapor Deposition, 365 Polysilicon microheater, 369 Porosification, 52, 56 Porous silicon oxidation, 49 Protein BSA molecules, 344 PS heterostructures, 54 Pseudomorphic growth, 48 Pseudo-MOSFET, 82 Pseudosubstrate, 49, 60 Q QG-Quadruple Gate, 128 QM darkspace, 328 QM effect, 326, 327 QM effective gate dielectric thickening, 327 QM modes, 326 Quantum confinement, 157 Quantum effects, 170 Quantum-mechanical effects, 324 R Radio frequency, 92 Random Dopant Fluctuation, 163 Reactive Ion Etching, 360 Remote Coulomb scattering, 311, 314 Remote-charge scattering, 237 Resonant tunneling effect, 209 Resonant tunneling -FET, 202 Reversible elastic, 49 RF applications, 112 RF FinFET, 101 RF performance, 99, 100 RMS roughness, 24 Roughness RMS, 242 S Scalability, 162 SCE, 97 Schottky barrier, 202 Schottky barrier MOSFET, 97, 98 Schottky barrier CNTFET, 222 Schottky contacts, 126 Schottky-like source and drain contacts, 216 Screen printing, 367 Self-aligned tungsten gate process, 6 Self-assembled nanoporous materials, 69 Self-consistent Born approximation, 5 Self-consistent three-dimensional Non-Equilibrium Green Function quantum simulator, 202 Semiconductor nanowires, 69 Series resistance, 159 SG mode, 332 SG MOSFET, 105 Short channel effect, 141 Short channel effects, 158, 169, 253, 307 Short time anneal, 4, 38 Short-Channel Effect, 190 Short-channel effects, 99, 134, 191, 323 Silicon nanowire, 25, 138 Silicon SET, 239, 257, 245 Silicon-on-Nothing, 364 Silicon-on-sapphire, 22 Single dopant, 251, 261 Single dopant effects, 252 Single electron effects, 255 Single gate SOI, 127 Single gate transistor, 134 Single particle Monte Carlo method, 170 SiOC hard mask, 147 Six-band k p model, 170 Small slope switches, 132 Smart-cut process, 23 Smart-Cut SOI, 85 SOI and Germanium on Insulator substrates, 38 SOI fully depleted, 308 SOI Gate-all-Around, 211 SOI MOSFET, 262 SOI nanowire transistor, 344 SOI NW FET, 344 SOI PIN photodetector, 363 SOI RF-MEMS, 357 SOI-CMOS-MEMS, 356 SOI-nanowires transistors, 345 Solid-phase crystallization, 67, 68 SONOS, 136 Source/drain engineering, 133 S-parameters, 102 Spin-on-dopant, 10 Spreading Resistance analysis, 13 SR scattering, 174 SRAM, 123, 146, 150 SR-limited, 238, 247 SR-limited mobility, 243 Stability diagram, 257 Static noise margin, 163 Sticking/unsticking, 52 Strained MOSFET, 96

5 Index 447 Strained silicon on insulator, 123 Strained-SOI, 166 Stress memorization technique, 166 Subband modulation, 170 Subband modulation effect, 174 Subband spatial fluctuations, 248 Subthreshold slope, 196, 272 Super lateral growth, 69 Super-cell, 30 Supersaturation, 70 Surface roughness, 109, 172 Surface-roughness scattering, 238 Suspended-Gate FET, 202 System-on-a-chip, 357 System-on-chip, 91, 92 Systems-on-chip, 110 T TCAD simulations, 320 TeraHertz sensors, 356 Thermal coefficients of expansion, 11 Thermally induced decomposition, 75 Threshold voltage, 143, 155 Thru-Line-Reflect method, 107 Top-down approach, 343 Transconductance, 198, 216, 267 Transferred germanium layer, 44 Transferred layer, 13 Transport anisotropy, 177 Transport boosters, 164 Trigate MOSFET, 196 Tunnel barriers, 253 Tunnel FET, 133 Tunnel-FET, 202 U Ultrashallow junctions, 187 Ultra-thin body, 96 Ultrathin buried oxide, 155 Ultra-thin FDSOI, 125 Ultrathin SOI, 170, 178 Ultra-thin SOI devices, 172 Uncooled infrared, 356 Uncooled IR sensors, 356 Underlap geometry, 356 Uniaxially strained devices, 252, 259 UTB SOI, 283 UTB SOI MOSFET, 324, 336, 327 V Vapor-liquid-solid catalytic growth, 67, 69 Variability, 163 VLS growth, 79 Voltage Controlled Oscillators, 371 Voltage-Doping Transformation, 190 Volume inversion, 170 W Wavefunction confinement, 180 Wheatstone bridge, 374 Wheatstone structure, 387 Wigner current, 231 Wigner Monte Carlo simulation, 217 Wigner-Boltzmann equation, 220