! Review: MOS IV Curves and Switch Model. ! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. !
|
|
- Prosper Stafford
- 5 years ago
- Views:
Transcription
1 ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 3: January 21, 2016 MOS Fabrication pt. 2: Design Rules and Layout Lecture Outline! Review: MOS IV Curves and Switch Model! MOS Device Layout! Inverter Layout! Gate Layout and Stick Diagrams! Design Rules! Standard Cells! Linear Elements Penn ESE 570 Spring 2016 Khanna Adapted from GATech ESE3060 Slides 2 MOSFET MOSFET IV Characteristics 50 V DS! Metal Oxide Semiconductor Field Effect Transistor " Primary active component for the term " Three terminal device V GS = V G - V S V DS = V D - V S " Voltage at gate controls conduction between two other terminals (source, drain) 3 I DS Drain current [arbitrary unit] Gate to source voltage [V] V GS Define: V th = Threshold Voltage 4 MOSFET IV Characteristics MOSFET IV Characteristics V DS <V GS -V TH V GS -V th V GS -V th I DS I DS V DS V GS -V TH V DS 5 V DS 6 1
2 MOSFET Zeroeth Order Model MOSFET Zeroeth Order Model I DS! Ideal Switch V GS > V th # switch is closed, conducts V GS < V th # switch is open, does not conduct! Gate draws no current from input " Loads input capacitively (gate capacitance) V GS 7 8 MOSFET N-Type, P-Type Symmetry! N negative carriers " electrons! Switch turned on positive V GS! P positive carriers " holes! Switch turned on negative V GS! NMOS: " Electrons are carriers " Electrons flow from source-to-drain " From lowest voltage#highest " Drain is most positive terminal " Current flows from drain-tosource V th,n > 0 V GS > V th,n to conduct V th,p < 0 V GS < V th,p to conduct 9! Symmetric Device " Like a resistor, doesn t know difference between two ends " Drain and source are defined by circuit connections 10 Symmetry MOSFET N-Type, P-Type! PMOS: " Holes are carriers " positively " Holes flow from source#drain " Flow from highest voltage#lowest " Drain is most negative terminal " Current flows from source-todrain! N negative carriers " electrons! Switch turned on positive V GS! P positive carriers " holes! Switch turned on negative V GS! Symmetric Device " Like a resistor, doesn t know difference between two ends " Drain and source are defined by circuit connections 11 V th,n > 0 V GS > V th,n to conduct V th,p < 0 V GS < V th,p to conduct 12 2
3 Typical N-Well CMOS Process Typical N-Well CMOS Process Interconnect Cross Section CMOS Layers! Standard n-well Process " Active (Diffusion) (Drain/Source regions) " Polysilicon (Gate Terminals) " Metal 1, Metal 2, Metal3 " Poly Contact (connects metal 1 to polysilicon) " Active Contact (connects metal 1 to active) " Via (connects metal 2 to metal 1) " nwell (PMOS bulk region) " n Select (used with active to create n-type diffusion) " p Select (used with active to create p-type diffusion) ITRS NMOS vs PMOS MOS Layout Well, Active, Select! NMOS built on p substrate! PMOS built on n substrate " Needs an N-well
4 MOS Layout Poly Gate CMOS Layers! Standard n-well Process " Active (Diffusion) (Drain/Source regions) " Polysilicon (Gate Terminals) " Metal 1, Metal 2, Metal3 " Poly Contact (connects metal 1 to polysilicon) " Active Contact (connects metal 1 to active) " Via (connects metal 2 to metal 1) " nwell (PMOS bulk region) " n Select (used with active to create n-type diffusion) " p Select (used with active to create p-type diffusion) Wiring and Contact Layout Substrate and Well Contacts! Properties " Set Well and Substrate Voltages to Vdd and Gnd " Prevent Forward Biasing and Latch-Up " Must Be at Least One per Well " Should Be Placed Regularly Diffusion (Active) Contact Poly Contact Via (metal1-metal2) Layout Example: CMOS Inverter Layout Example: CMOS Inverter! Set Pitch (place well and power/ground busses)! Add Transistors (active, select and poly)
5 Layout Example: CMOS Inverter Layout Example: CMOS Inverter! Make Connections (poly, metal, and contacts)! Add Substrate and Well Contacts Layout Example: CMOS Inverter Example: Mystery Gate! Add External Wiring and Resize Example: NAND Gate Example: NAND Gate (Horizontal)
6 Symbolic Layout Layout Design Rules! Stick diagrams capture spatial relationships, but abstract away design rules (coming up next )! What gate is this? " How many NMOS? PMOS? D/S connections?! Physical Layer " Design Rules are a set of process-specific geometric rules for preparing layout artwork to enable the layout to be manufacturable, i.e. preserve all of the circuit structures and feature geometries intended by the chip designers! Purpose " Realize fabricated chips that are die area efficient and manufacturable by balancing the conflicting objectives to minimize die area and maximize yield! Design Rule Waiver " Explicit permission granted by the fabrication organization to the design organization to violate certain design rules or to allow certain design rule errors on a given design Design Rules Scalable CMOS Rules! Minimum Separation [A] " Intralayer (all layers) " Interlayer (active to poly/well/select) " From Transistor! Minimum Width (all layers) [B]! Minimum Overlap [C] " Past Transistor (poly, active) " Around Contact Cut (all contacted layers) " Around Active (well, select)! Exact Size (contact cuts) [D]! Definition " Design Rules Based on a Unitless Parameter (λ) " λ Scales with Process Feature Size " λ = 0.5*L min " Example: λ = 0.6 in a 1.2mm Process! Advantages " Simplifies Design - Requires Learning Only One Set of Design Rules " Facilitates Translating Designs between Processes Width/Spacing Design Rules Contact Design Rules
7 Potential Consequences of Design Rule Violations Potential Consequences of Design Rule Violations! Inter-Layer Design Rule Origins Intended Transistor Intended Unrelated Poly & Diffusion Catastrophic Error Unintended misalignment cause Source-Drain short circuit Catastrophic Error Unintended overlap cause fabrication of a parasitic Transistor! Inter-Layer Design Rule Origins Both Metal 1 & Diffusion Intended Contact Alignment Contact and Via Masks M1 contact to n-diffusion M1 contact to p-diffusion M1 contact to poly Mn contact to Mn-1 for n = 2, 3,.. -> Contact Mask -> Via Mask Both Metal 1 & Diffusion Mask misalignment Error Unintended misalignment cause poor contact Design Capture Tools Rules Checking! Hardware Description Languages (HDL) & " capture a textual hierarchical description of design at abstraction ranging from gate or even transistor level up to a behavioral description (eg. VHDL, Verilog)! Schematic capture " capture a structural, hierarchical graphical representation of the design netlist (eg. Cadence Composer)! Layout " capture a hierarchical view of the physical geometric aspect of a design. The units of hierarchy are called cells, and have physical extent (size). In general, good design requires that only one cell contain the design info for a particular area of the chip (eg. Cadence Virtuoso)! Complex designs invariably suffer design and design entry errors. There are a number of tools and methodologies to detect and correct " Physical Design Rules Checking (DRC) checks for design rule violations such as minimum spacing etc. DRC checking is complicated by hierarchy and overlap between cells " Electrical Rule Checking (ERC) checks for violations such as shorts between Vdd and GND, opens, and so on " Layout vs. Schematic (LVS) checks for a one-to-one correspondence between transistor schematic and the layout! Formal verification is used to show that the design satisfies a formal description of what it should do! Simulation is used to show that the design is functional on some well selected set of input vectors! Timing analysis is used to predict design performance Circuit Extraction Standard Cells! Circuit extraction extracts a schematic representation of a layout, including transistors, wires, and possibly wire and device resistance and capacitance.! Lay out gates so that heights match " Rows of adjacent cells " Standardized sizes! Motivation: automated place and route " EDA tools convert HDL to layout! Circuit extraction is used for LVS, and for spice simu- lation of layouts
8 Standard Cell Area Standard Cell Layout Example All cells uniform height inv nand3 Cell area Width of channel determined by routing 43 CMOS Process Enhancements 44 CMOS Poly-Poly Capacitors W L C. Bipolar Transistors 45 Resistors 46 Big Idea! Layouts are physical realization of circuit " Geometry tradeoff " "! 47 Can decrease spacing at the cost of yield Design rules Can go from circuit to layout or layout to circuit by inspection 48 8
9 Admin! HW 1 should be submitted! HW 2 due next week 1/28 " Posted tonight after class! Office hours updated on Course website 49 9
ESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 3: January 21, 2016 MOS Fabrication pt. 2: Design Rules and Layout Penn ESE 570 Spring 2016 Khanna Adapted from GATech ESE3060 Slides Lecture
More information! Review: MOS IV Curves and Switch Model. ! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. !
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 3: January 21, 2017 MOS Fabrication pt. 2: Design Rules and Layout Lecture Outline! Review: MOS IV Curves and Switch Model! MOS Device Layout!
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 3: January 24, 2019 MOS Fabrication pt. 2: Design Rules and Layout Penn ESE 570 Spring 2019 Khanna Jack Keil Wolf Lecture http://www.ese.upenn.edu/about-ese/events/wolf.php
More informationJack Keil Wolf Lecture. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Lecture Outline. MOSFET N-Type, P-Type.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Jack Keil Wolf Lecture Lec 3: January 24, 2019 MOS Fabrication pt. 2: Design Rules and Layout http://www.ese.upenn.edu/about-ese/events/wolf.php
More information! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. ! Standard Cells. ! CMOS Process Enhancements
EE 570: igital Integrated Circuits and VLI Fundamentals Lec 3: January 18, 2018 MO Fabrication pt. 2: esign Rules and Layout Lecture Outline! MO evice Layout! Inverter Layout! Gate Layout and tick iagrams!
More informationESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems. Today. Variation. Variation. Process Corners.
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 13: October 3, 2012 Layout and Area Today Coping with Variation (from last time) Layout Transistors Gates Design rules Standard
More informationSticks Diagram & Layout. Part II
Sticks Diagram & Layout Part II Well and Substrate Taps Substrate must be tied to GND and n-well to V DD Metal to lightly-doped semiconductor forms poor connection called Shottky Diode Use heavily doped
More informationBasic Fabrication Steps
Basic Fabrication Steps and Layout Somayyeh Koohi Department of Computer Engineering Adapted with modifications from lecture notes prepared by author Outline Fabrication steps Transistor structures Transistor
More informationConduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor
Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,
More informationTopic 2. Basic MOS theory & SPICE simulation
Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris, Ch 2 & 5.1-5.3 Rabaey, Ch 3) URL: www.ee.ic.ac.uk/pcheung/
More informationConduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor
Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,
More informationCMOS VLSI IC Design. A decent understanding of all tasks required to design and fabricate a chip takes years of experience
CMOS VLSI IC Design A decent understanding of all tasks required to design and fabricate a chip takes years of experience 1 Commonly used keywords INTEGRATED CIRCUIT (IC) many transistors on one chip VERY
More informationECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha
ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor
More information+1 (479)
Introduction to VLSI Design http://csce.uark.edu +1 (479) 575-6043 yrpeng@uark.edu Invention of the Transistor Vacuum tubes ruled in first half of 20th century Large, expensive, power-hungry, unreliable
More informationECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices
ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices Christopher Batten School of Electrical and Computer Engineering Cornell University http://www.csl.cornell.edu/courses/ece5950 Simple Transistor
More informationCS/ECE 5710/6710. Composite Layout
CS/ECE 5710/6710 Introduction to Layout Inverter Layout Example Layout Design Rules Composite Layout Drawing the mask layers that will be used by the fabrication folks to make the devices Very different
More informationECE/CoE 0132: FETs and Gates
ECE/CoE 0132: FETs and Gates Kartik Mohanram September 6, 2017 1 Physical properties of gates Over the next 2 lectures, we will discuss some of the physical characteristics of integrated circuits. We will
More informationDesign Rules, Technology File, DRC / LVS
Design Rules, Technology File, DRC / LVS Prof. Dr. Peter Fischer VLSI Design: Design Rules P. Fischer, TI, Uni Mannheim, Seite 1 DESIGN RULES Rules in one Layer Caused by manufacturing limits (lithography,
More informationPHYSICAL STRUCTURE OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag
PHYSICAL STRUCTURE OF CMOS INTEGRATED CIRCUITS Dr. Mohammed M. Farag Outline Integrated Circuit Layers MOSFETs CMOS Layers Designing FET Arrays EE 432 VLSI Modeling and Design 2 Integrated Circuit Layers
More informationTopic 3. CMOS Fabrication Process
Topic 3 CMOS Fabrication Process Peter Cheung Department of Electrical & Electronic Engineering Imperial College London URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk Lecture 3-1 Layout of a Inverter
More informationDepletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET
Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage
More informationFundamentals of Integrated Circuit Design
1. Definitions Integrated circuits Fundamentals of Integrated Circuit Design An integrated circuit (IC) is formed by components and interconnections that are fabricated on a single silicon piece of semiconductor,
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 23: April 12, 2016 VLSI Design and Variation Penn ESE 570 Spring 2016 Khanna Lecture Outline! Design Methodologies " Hierarchy, Modularity,
More informationLayout of a Inverter. Topic 3. CMOS Fabrication Process. The CMOS Process - photolithography (2) The CMOS Process - photolithography (1) v o.
Layout of a Inverter Topic 3 CMOS Fabrication Process V DD Q p Peter Cheung Department of Electrical & Electronic Engineering Imperial College London v i v o Q n URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk
More information420 Intro to VLSI Design
Dept of Electrical and Computer Engineering 420 Intro to VLSI Design Lecture 0: Course Introduction and Overview Valencia M. Joyner Spring 2005 Getting Started Syllabus About the Instructor Labs, Problem
More informationMicroelectronics, BSc course
Microelectronics, BSc course MOS circuits: CMOS circuits, construction http://www.eet.bme.hu/~poppe/miel/en/14-cmos.pptx http://www.eet.bme.hu The abstraction level of our study: SYSTEM + MODULE GATE CIRCUIT
More informationEE 330 Lecture 7. Design Rules
EE 330 Lecture 7 Design Rules Last time: Response time of logic gates A Y C L t R C HL SWn L t R C LH SWp L C L proportional to #gates driven to avg input cap of gates R SW proportional length/width Last
More informationCS/EE 181a 2010/11 Lecture 1
CS/EE 181a 2010/11 Lecture 1 CS/EE 181 is about designing digital CMOS systems. Functional Specification Approximate domain of CS181 Circuit Specification Simulation Architectural Specification Abstract
More informationIC Layout Design of 4-bit Universal Shift Register using Electric VLSI Design System
IC Layout Design of 4-bit Universal Shift Register using Electric VLSI Design System 1 Raj Kumar Mistri, 2 Rahul Ranjan, 1,2 Assistant Professor, RTC Institute of Technology, Anandi, Ranchi, Jharkhand,
More informationDIGITAL VLSI LAB ASSIGNMENT 1
DIGITAL VLSI LAB ASSIGNMENT 1 Problem 1: NMOS and PMOS plots using Cadence. In this exercise, you are required to generate both NMOS and PMOS I-V device characteristics (I/P and O/P) using Cadence (Use
More information2009 Spring CS211 Digital Systems & Lab 1 CHAPTER 3: TECHNOLOGY (PART 2)
1 CHAPTER 3: IMPLEMENTATION TECHNOLOGY (PART 2) Whatwillwelearninthischapter? we learn in this 2 How transistors operate and form simple switches CMOS logic gates IC technology FPGAs and other PLDs Basic
More informationDesign cycle for MEMS
Design cycle for MEMS Design cycle for ICs IC Process Selection nmos CMOS BiCMOS ECL for logic for I/O and driver circuit for critical high speed parts of the system The Real Estate of a Wafer MOS Transistor
More informationImproved Inverter: Current-Source Pull-Up. MOS Inverter with Current-Source Pull-Up. What else could be connected between the drain and V DD?
Improved Inverter: Current-Source Pull-Up MOS Inverter with Current-Source Pull-Up What else could be connected between the drain and? Replace resistor with current source I SUP roc i D v IN v OUT Find
More informationTechnology, Jabalpur, India 1 2
1181 LAYOUT DESIGNING AND OPTIMIZATION TECHNIQUES USED FOR DIFFERENT FULL ADDER TOPOLOGIES ARPAN SINGH RAJPUT 1, RAJESH PARASHAR 2 1 M.Tech. Scholar, 2 Assistant professor, Department of Electronics and
More informationFABRICATION OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag
FABRICATION OF CMOS INTEGRATED CIRCUITS Dr. Mohammed M. Farag Outline Overview of CMOS Fabrication Processes The CMOS Fabrication Process Flow Design Rules Reference: Uyemura, John P. "Introduction to
More informationEE 434 ASIC and Digital Systems. Prof. Dae Hyun Kim School of Electrical Engineering and Computer Science Washington State University.
EE 434 ASIC and Digital Systems Prof. Dae Hyun Kim School of Electrical Engineering and Computer Science Washington State University Preliminaries VLSI Design System Specification Functional Design RTL
More informationLecture 0: Introduction
Lecture 0: Introduction Introduction Integrated circuits: many transistors on one chip. Very Large Scale Integration (VLSI): bucketloads! Complementary Metal Oxide Semiconductor Fast, cheap, low power
More informationEE241 - Spring 2013 Advanced Digital Integrated Circuits. Projects. Groups of 3 Proposals in two weeks (2/20) Topics: Lecture 5: Transistor Models
EE241 - Spring 2013 Advanced Digital Integrated Circuits Lecture 5: Transistor Models Projects Groups of 3 Proposals in two weeks (2/20) Topics: Soft errors in datapaths Soft errors in memory Integration
More informationLayout - Line of Diffusion. Where are we? Line of Diffusion in General. Line of Diffusion in General. Stick Diagrams. Line of Diffusion in General
Where are we? Lots of Layout issues Line of diffusion style Power pitch it-slice pitch Routing strategies Transistor sizing Wire sizing Layout - Line of Diffusion Very common layout method Start with a
More informationFUNDAMENTALS OF MODERN VLSI DEVICES
19-13- FUNDAMENTALS OF MODERN VLSI DEVICES YUAN TAUR TAK H. MING CAMBRIDGE UNIVERSITY PRESS Physical Constants and Unit Conversions List of Symbols Preface page xi xiii xxi 1 INTRODUCTION I 1.1 Evolution
More informationEMT 251 Introduction to IC Design
EMT 251 Introduction to IC Design (Pengantar Rekabentuk Litar Terkamir) Semester II 2011/2012 Introduction to IC design and Transistor Fundamental Some Keywords! Very-large-scale-integration (VLSI) is
More informationLecture 9: Cell Design Issues
Lecture 9: Cell Design Issues MAH, AEN EE271 Lecture 9 1 Overview Reading W&E 6.3 to 6.3.6 - FPGA, Gate Array, and Std Cell design W&E 5.3 - Cell design Introduction This lecture will look at some of the
More informationChapter 1. Introduction
EECS3611 Analog Integrated Circuit esign Chapter 1 Introduction EECS3611 Analog Integrated Circuit esign Instructor: Prof. Ebrahim Ghafar-Zadeh, Prof. Peter Lian email: egz@cse.yorku.ca peterlian@cse.yorku.ca
More information6.776 High Speed Communication Circuits Lecture 6 MOS Transistors, Passive Components, Gain- Bandwidth Issue for Broadband Amplifiers
6.776 High Speed Communication Circuits Lecture 6 MOS Transistors, Passive Components, Gain- Bandwidth Issue for Broadband Amplifiers Massachusetts Institute of Technology February 17, 2005 Copyright 2005
More informationDesigning Information Devices and Systems II Fall 2017 Note 1
EECS 16B Designing Information Devices and Systems II Fall 2017 Note 1 1 Digital Information Processing Electrical circuits manipulate voltages (V ) and currents (I) in order to: 1. Process information
More informationSolid State Devices- Part- II. Module- IV
Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the
More informationIntroduction to CMOS VLSI Design (E158) Lecture 9: Cell Design
Harris Introduction to CMOS VLSI Design (E158) Lecture 9: Cell Design David Harris Harvey Mudd College David_Harris@hmc.edu Based on EE271 developed by Mark Horowitz, Stanford University MAH E158 Lecture
More informationUNIT III VLSI CIRCUIT DESIGN PROCESSES. In this chapter we will be studying how to get the schematic into stick diagrams or layouts.
UNIT III VLSI CIRCUIT DESIGN PROCESSES In this chapter we will be studying how to get the schematic into stick diagrams or layouts. MOS circuits are formed on four basic layers: N-diffusion P-diffusion
More informationEC 1354-Principles of VLSI Design
EC 1354-Principles of VLSI Design UNIT I MOS TRANSISTOR THEORY AND PROCESS TECHNOLOGY PART-A 1. What are the four generations of integrated circuits? 2. Give the advantages of IC. 3. Give the variety of
More informationINTRODUCTION TO MOS TECHNOLOGY
INTRODUCTION TO MOS TECHNOLOGY 1. The MOS transistor The most basic element in the design of a large scale integrated circuit is the transistor. For the processes we will discuss, the type of transistor
More informationReview: CMOS Logic Gates
Review: CMOS Logic Gates INV Schematic NOR Schematic NAND Schematic + Vsg - pmos x x Vin Vout = Vin y + Vgs - nmos CMOS inverts functions CMOS Combinational Logic x g(x,y) = x + y use DeMorgan relations
More informationLecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1
Lecture 16 Complementary metal oxide semiconductor (CMOS) CMOS 1-1 Outline Complementary metal oxide semiconductor (CMOS) Inverting circuit Properties Operating points Propagation delay Power dissipation
More informationIntroduction to VLSI design using Cadence Electronic Design Automation Tools
Bangladesh University of Engineering & Technology Department of Electrical & Electronic Engineering Introduction to VLSI design using Cadence Electronic Design Automation Tools Laboratory Module 4: Layout
More informationEE 434 Lecture 2. Basic Concepts
EE 434 Lecture 2 Basic Concepts Review from Last Time Semiconductor Industry is One of the Largest Sectors in the World Economy and Growing All Initiatives Driven by Economic Opportunities and Limitations
More informationCMOS Transistor and Circuits. Jan 2015 CMOS Transistor 1
CMOS Transistor and Circuits Jan 2015 CMOS Transistor 1 Latchup in CMOS Circuits Jan 2015 CMOS Transistor 2 Parasitic bipolar transistors are formed by substrate and source / drain devices Latchup occurs
More informationCHAPTER 6 DIGITAL CIRCUIT DESIGN USING SINGLE ELECTRON TRANSISTOR LOGIC
94 CHAPTER 6 DIGITAL CIRCUIT DESIGN USING SINGLE ELECTRON TRANSISTOR LOGIC 6.1 INTRODUCTION The semiconductor digital circuits began with the Resistor Diode Logic (RDL) which was smaller in size, faster
More informationEE301 Electronics I , Fall
EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials
More information444 Index. F Fermi potential, 146 FGMOS transistor, 20 23, 57, 83, 84, 98, 205, 208, 213, 215, 216, 241, 242, 251, 280, 311, 318, 332, 354, 407
Index A Accuracy active resistor structures, 46, 323, 328, 329, 341, 344, 360 computational circuits, 171 differential amplifiers, 30, 31 exponential circuits, 285, 291, 292 multifunctional structures,
More informationEE 330 Lecture 7. Design Rules. IC Fabrication Technology Part 1
EE 330 Lecture 7 Design Rules IC Fabrication Technology Part 1 Review from Last Time Technology Files Provide Information About Process Process Flow (Fabrication Technology) Model Parameters Design Rules
More information8. Characteristics of Field Effect Transistor (MOSFET)
1 8. Characteristics of Field Effect Transistor (MOSFET) 8.1. Objectives The purpose of this experiment is to measure input and output characteristics of n-channel and p- channel field effect transistors
More informationUNIT-III POWER ESTIMATION AND ANALYSIS
UNIT-III POWER ESTIMATION AND ANALYSIS In VLSI design implementation simulation software operating at various levels of design abstraction. In general simulation at a lower-level design abstraction offers
More informationECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits
Faculty of Engineering ECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits CMOS Technology Complementary MOS, or CMOS, needs both PMOS and NMOS FET devices for their logic gates to be realized
More informationdue to power supply and technology. Process specifications were obtained from the MOSIS
design number 85739 VLSI Design Chromatic Instrument Tuner For the design of the operational amplifier, we have to take into consideration the constraints due to power supply and technology. Process specifications
More informationReading. Lecture 17: MOS transistors digital. Context. Digital techniques:
Reading Lecture 17: MOS transistors digital Today we are going to look at the analog characteristics of simple digital devices, 5. 5.4 And following the midterm, we will cover PN diodes again in forward
More informationECE 2300 Digital Logic & Computer Organization
ECE 2300 Digital Logic & Computer Organization Spring 2018 CMOS Logic Lecture 4: 1 NAND Logic Gate X Y (X Y) = NAND Using De Morgan s Law: (X Y) = X +Y X X X +Y = Y Y Also a NAND We can build circuits
More informationSession 10: Solid State Physics MOSFET
Session 10: Solid State Physics MOSFET 1 Outline A B C D E F G H I J 2 MOSCap MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor: Al (metal) SiO2 (oxide) High k ~0.1 ~5 A SiO2 A n+ n+ p-type Si (bulk)
More information2. (2 pts) What is the major reason static CMOS NAND gates are often preferred over static CMOS NOR gates?
EE 330 Final Exam Spring 05 Name Instructions: Students may bring 3 pages of notes (3 front + 3 back) to this exam. There are 0 questions and 8 problems. There are two points allocated to each question.
More informationModule-3: Metal Oxide Semiconductor (MOS) & Emitter coupled logic (ECL) families
1 Module-3: Metal Oxide Semiconductor (MOS) & Emitter coupled logic (ECL) families 1. Introduction 2. Metal Oxide Semiconductor (MOS) logic 2.1. Enhancement and depletion mode 2.2. NMOS and PMOS inverter
More informationESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems. Today. MOSFET Ids vs. Vgs, Vds MOSFET. Preclass. MOSFET I vs.
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 2: September 7, 2012 Transistor Introduction Today MOSFET Capacitive and resistive loads Zero-th order transistor model
More informationECE380 Digital Logic. Logic values as voltage levels
ECE380 Digital Logic Implementation Technology: NMOS and PMOS Transistors, CMOS logic gates Dr. D. J. Jackson Lecture 13-1 Logic values as voltage levels V ss is the minimum voltage that can exist in the
More informationLecture 020 ECE4430 Review II (1/5/04) Page 020-1
Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 LECTURE 020 ECE 4430 REVIEW II (READING: GHLM - Chap. 2) Objective The objective of this presentation is: 1.) Identify the prerequisite material as taught
More informationLecture 020 ECE4430 Review II (1/5/04) Page 020-1
Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 LECTURE 020 ECE 4430 REVIEW II (READING: GHLM - Chap. 2) Objective The objective of this presentation is: 1.) Identify the prerequisite material as taught
More informationCMOS synchronous Buck switching power supply Raheel Sadiq November 28, 2016
CMOS synchronous Buck switching power supply Raheel Sadiq November 28, 2016 Part 1: This part of the project is to lay out a bandgap. We previously built our bandgap in HW #13 which supplied a constant
More informationDigital Systems Design
Digital Systems Design Digital Systems Design and Test Dr. D. J. Jackson Lecture 1-1 Introduction Traditional digital design Manual process of designing and capturing circuits Schematic entry System-level
More informationWiring Parasitics. Contact Resistance Measurement and Rules
Wiring Parasitics Contact Resistance Measurement and Rules Connections between metal layers and nonmetal layers are called contacts. Connections between metal layers are called vias. For non-critical design,
More informationShorthand Notation for NMOS and PMOS Transistors
Shorthand Notation for NMOS and PMOS Transistors Terminal Voltages Mode of operation depends on V g, V d, V s V gs = V g V s V gd = V g V d V ds = V d V s = V gs - V gd Source and drain are symmetric diffusion
More informationLecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and
Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body
More informationDisseny físic. Disseny en Standard Cells. Enric Pastor Rosa M. Badia Ramon Canal DM Tardor DM, Tardor
Disseny físic Disseny en Standard Cells Enric Pastor Rosa M. Badia Ramon Canal DM Tardor 2005 DM, Tardor 2005 1 Design domains (Gajski) Structural Processor, memory ALU, registers Cell Device, gate Transistor
More informationZero Steady State Current Power-on-Reset Circuit with Brown-Out Detector
Zero Steady State Current Power-on-Reset Circuit with Brown-Out Detector Sanjay Kumar Wadhwa 1, G.K. Siddhartha 2, Anand Gaurav 3 Freescale Semiconductor India Pvt. Ltd. 1 sanjay.wadhwa@freescale.com,
More informationField-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
More informationDevice Technologies. Yau - 1
Device Technologies Yau - 1 Objectives After studying the material in this chapter, you will be able to: 1. Identify differences between analog and digital devices and passive and active components. Explain
More information3-2-1 Contact: An Experimental Approach to the Analysis of Contacts in 45 nm and Below. Rasit Onur Topaloglu, Ph.D.
3-2-1 Contact: An Experimental Approach to the Analysis of Contacts in 45 nm and Below Rasit Onur Topaloglu, Ph.D. Outline Introduction and Motivation Impact of Contact Resistance Test Structures for Contact
More informationLecture 19 Real Semiconductor Switches and the Evolution of Power MOSFETS A.. Real Switches: I(D) through the switch and V(D) across the switch
Lecture 19 Real Semiconductor Switches and the Evolution of Power MOSFETS 1 A.. Real Switches: I(D) through the switch and V(D) across the switch 1. Two quadrant switch implementation and device choice
More informationDigital Electronics Part II - Circuits
Digital Electronics Part II - Circuits Dr. I. J. Wassell Gates from Transistors 1 Introduction Logic circuits are non-linear, consequently we will introduce a graphical technique for analysing such circuits
More informationBASIC PHYSICAL DESIGN AN OVERVIEW The VLSI design flow for any IC design is as follows
Unit 3 BASIC PHYSICAL DESIGN AN OVERVIEW The VLSI design flow for any IC design is as follows 1.Specification (problem definition) 2.Schematic(gate level design) (equivalence check) 3.Layout (equivalence
More informationDigital Design and System Implementation. Overview of Physical Implementations
Digital Design and System Implementation Overview of Physical Implementations CMOS devices CMOS transistor circuit functional behavior Basic logic gates Transmission gates Tri-state buffers Flip-flops
More information! Sequential Logic. ! Timing Hazards. ! Dynamic Logic. ! Add state elements (registers, latches) ! Compute. " From state elements
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 19: April 2, 2019 Sequential Logic, Timing Hazards and Dynamic Logic Lecture Outline! Sequential Logic! Timing Hazards! Dynamic Logic 4 Sequential
More informationEE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017
EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017 Objective: The objective of this laboratory experiment is to become more familiar with the operation of
More information! Is it feasible? ! How do we decompose the problem? ! Vdd. ! Topology. " Gate choice, logical optimization. " Fanin, fanout, Serial vs.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Design Space Exploration Lec 18: March 28, 2017 Design Space Exploration, Synchronous MOS Logic, Timing Hazards 3 Design Problem Problem Solvable!
More informationEE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng
EE4800 CMOS Digital IC Design & Analysis Lecture 1 Introduction Zhuo Feng 1.1 Prof. Zhuo Feng Office: EERC 730 Phone: 487-3116 Email: zhuofeng@mtu.edu Class Website http://www.ece.mtu.edu/~zhuofeng/ee4800fall2010.html
More informationLecture 190 CMOS Technology, Compatible Devices (10/28/01) Page 190-1
Lecture 190 CMOS Technology, Compatible Devices (10/28/01) Page 190-1 LECTURE 190 CMOS TECHNOLOGY-COMPATIBLE DEVICES (READING: Text-Sec. 2.9) INTRODUCTION Objective The objective of this presentation is
More informationDevice Technology( Part 2 ): CMOS IC Technologies
1 Device Technology( Part 2 ): CMOS IC Technologies Chapter 3 : Semiconductor Manufacturing Technology by M. Quirk & J. Serda Saroj Kumar Patra, Department of Electronics and Telecommunication, Norwegian
More informationLecture #29. Moore s Law
Lecture #29 ANNOUNCEMENTS HW#15 will be for extra credit Quiz #6 (Thursday 5/8) will include MOSFET C-V No late Projects will be accepted after Thursday 5/8 The last Coffee Hour will be held this Thursday
More informationEE 434 ASIC & Digital Systems
EE 434 ASIC & Digital Systems Dae Hyun Kim EECS Washington State University Spring 2017 Course Website http://eecs.wsu.edu/~ee434 Themes Study how to design, analyze, and test a complex applicationspecific
More informationEC0306 INTRODUCTION TO VLSI DESIGN
EC0306 INTRODUCTION TO VLSI DESIGN UNIT I INTRODUCTION TO MOS CIRCUITS Why VLSI? Integration improves the design: o lower parasitics = higher speed; o lower power; o physically smaller. Integration reduces
More informationECE 410: VLSI Design Course Lecture Notes (Uyemura textbook)
ECE 410: VLSI Design Course Lecture Notes (Uyemura tetbook) Professor Fathi Salem Michigan State University We will be updating the notes this Semester. Lecture Notes Page 2.1 Electronics Revolution Age
More informationCMOS: Fabrication principles and design rules
CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29 Topics 1 Overview of the CMOS fabrication process 2 Geometric design rules João Canas
More informationMOS Transistor Theory
MOS Transistor Theory So far, we have viewed a MOS transistor as an ideal switch (digital operation) Reality: less than ideal EE 261 Krish Chakrabarty 1 MOS Transistor Theory Study conducting channel between
More informationLow-Voltage Wide Linear Range Tunable Operational Transconductance Amplifier
Low-Voltage Wide Linear Range Tunable Operational Transconductance Amplifier A dissertation submitted in partial fulfillment of the requirement for the award of degree of Master of Technology in VLSI Design
More informationTransistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced.
Unit 1 Basic MOS Technology Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced. Levels of Integration:- i) SSI:-
More information