Datasheet. 200mΩ, 600V, Super Junction N-Channel Power MOSFET. General Description. Symbol. Package Type. Features. Application. Ordering Information
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1 General Description The Sanrise is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding efficiency. The break down voltage is 600V and it has a high rugged avalanche characteristics. The is available in TO-252, TO-263-2, TO-220F, TO-220C and TO-247 packages. Features Ultra Low R DS(ON) = V GS = 10V. Ultra Low Gate Charge, Qg=25.3nC typ. Fast switching capability Robust design with better EAS performance EMI Improved Application LED Lighting Power TV Power High Power AC/DC Power Supply Symbol Figure 1 Symbol of Package Type TO-252 TO TO-220F TO-220C TO-247 Figure 2 Package Types of Ordering Information Circuit Type E: Lead Free G: Green Package Blank: Tube D: TO-252 TR: Tape & Reel S2: TO TF: TO-220F TC: TO-220C T: TO-247 Package Part Number Marking ID Packing Lead Free Green Lead Free Green Type TO-252 DTR-E DTR-G DE DG Tape & Reel TO S2TR-E S2TR-G S2E S2G Tape & Reel TO-220F TF-E TF-G TFE TFG Tube TO-220C TC-E TC-G TCE TCG Tube TO-247 T-E T-G TE TG Tube
2 Absolute Maximum Ratings Parameter Symbol Rating Unit Drain-Source Voltage (Note2) V DSS 630 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current T C =25ºC 14.0 I T D C =125ºC 7.1 A Pulsed Drain Current (Note 3) I DM 43 A Avalanche Energy, Single Pulse (Note 4) E AS 190 mj Avalanche Energy, Repetitive (Note 3) E AR 0.2 mj Avalanche Current, Repetitive (Note 3) I AR 4.0 A Continuous Diode Forward Current I S 16.0 A Diode Pulse Current I S.PULSE 43 A MOSFET dv/dt Ruggedness, V DS <=480V dv/dt 50 V/ns Reverse Diode dv/dt, V DS <=480V, I SD <=I D dv/dt 15 V/ns Operating Junction Temperature T J 150 ºC Storage Temperature T STG -55 to 150 ºC Lead Temperature (Soldering, 10 sec) T LEAD 260 ºC Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. For Transient Voltage Spike. 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. I AS = 4.0A, V DD = 60V, R G = 25Ω, Starting T J = 25 C
3 Electrical Characteristics T J = 25, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Statistic Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V, I D =250uA 600 V Zero Gate Voltage Drain Current I DSS V DS =600V, V GS =0V 1 ua Gate-Body Leakage Current Forward I GSSF V GS =30V, V DS =0V 100 Reverse I GSSR V GS =-30V, V DS =0V -100 na Gate Threshold Voltage V GS(TH) V DS =V GS, I D =250uA V Static Drain-Source On-Resistance R DS(ON) V GS =10V, I D =9.0A mω Gate Resistance R G f=1mhz, Open Drain 2.0 Ω Dynamic Characteristics Input Capacitance C ISS 1093 V DS =50V, V GS =0V, Output Capacitance C OSS 86.4 f=1mhz Reverse Transfer Capacitance C RSS 10 pf Effective output capacitance, energy related NOTE5 C O(er) V GS =0V, V DS =0 480V Effective output capacitance, time related NOTE6 C O(tr) Turn-on Delay Time t d(on) 12 Rise Time t r V DD =400V, I D =7.0A 20 Turn-off Delay Time t d(off) R G =10Ω, V GS =10V 24 ns Fall Time t f 50 Gate Charge Characteristics Gate to Source Charge Q gs 7.2 Gate to Drain Charge Q gd V DD =480V, I D =7.0A 8.1 nc Gate Charge Total Q g V GS =0 to 10V 25.3 Gate Plateau Voltage V plateau 5.4 V Reverse Diode Characteristics Drain-Source Diode Forward Voltage V SD V GS =0V, I SD =7.0A V Reverse Recovery Time t rr ns V R =400V, I F =7.0A Reverse Recovery Charge Q rr 1.7 uc di F /dt=100a/us Peak Reverse Recovery Current I rrm 16.1 A Note: 5. C O(er) is a fixed capacitance that gives the same stored energy as C OSS while V DS is rising from 0 to 480V 6. C O (tr) is a fixed capacitance that gives the same charging time as C OSS while V DS is rising from 0 to 480 V 51.2 pf
4 Typical Performance Characteristics Figure 3: Power Dissipation Figure 4: Max. Transient Thermal Impedance TO-247 TO-247 P tot = f(t c ) Z( thjc ) = f(t p ); parameter: D = t p /T Figure 5: Safe Operating Area Figure 6: Safe Operating Area I D = f(v DS ); T c = 25ºC; V GS >7V; parameter t p I D = f(v DS ); T c = 80ºC; V GS >7V; parameter t p
5 Figure 7: Typ. Output Characteristics Figure 8: Typ. Output Characteristics I D = f(v DS ); Tj= 25ºC; parameter: V GS I D = f(v DS ); T j = 125ºC; parameter: V GS Figure 9: Typ. Drain-Source On-State Resistance Figure 10: Typ. Drain-Source On-State Resistance R DS(ON) =f(i D ); T j =125ºC; parameter: V GS R DS(ON) =f(t j ); I D =9.0A; V GS =10V
6 Figure 11: Typ. Transfer Characteristics Figure 12: Typ. Gate Charge I D = f(v GS ); V DS = 20V V GS = f(q gate ), I D = 7A pulsed Figure 13: Drain-Source Breakdown Voltage Figure 14: Forward Characteristics of Reverse Diode V BR(DSS) =f(t j ); I D =1mA I F =f(v SD ); parameter: T j
7 Figure 15: Avalanche Energy Figure 16: Typ. Capacitances E AS =f(t j ); I D =4.0A; V DD =60V C=f(V DS ); V GS =0; f=1mhz Figure 17: C OSS Stored Energy E OSS =f(v DS )
8 Test Circuits 1. Gate Charge Test Circuit & Waveform 2. Switch Time Test Circuit 3. Unclaimed Inductive Switching Test Circuit & Waveforms
9 4. Test Circuit and Waveform for Diode Characteristics
10 Mechanical Dimensions TO-252 Unit: mm Symbol Dimensions(mm) Min. Typ. Max. A A A b b b c D D E E e 2.286(BSC) H L L L L L L L θ 0-8
11 Mechanical Dimensions (Continued) TO Unit: mm Symbol Dimensions(mm) Min. Typ. Max. A A A b b c c D D E E E e 2.54(BSC) H L L L L θ 0-8
12 Mechanical Dimensions (Continued) TO-220F Unit: mm Dimensions(mm) Symbol Min. Typ. Max. A A A A b b c D D E E e 2.54(BSC) H (H1) - (0.81) - L L ΦP Q
13 Mechanical Dimensions (Continued) TO-220C Unit: mm Symbol Dimensions(mm) Min. Typ. Max. A A A b b c D D E e 2.54(BSC) L L ΦP Q
14 Mechanical Dimensions (Continued) TO-247 Unit: mm Symbol Dimensions(mm) Dimensions(mm) Symbol Min. Typ. Max. Min. Typ. Max. A E A E A e 5.44(BSC) b L b L b P c P D P D Q D S E T E U
15 Sanrise Technology Limited Company IMPORTANT NOTICE Sanrise Technology Limited Company reserves the right to make changes without further notice to any products or specifications herein. Sanrise Technology Limited Company does not assume any responsibility for use of any its products for any particular purpose, nor does Sanrise Technology Limited Company assume any liability arising out of the application or use of any its products or circuits. Sanrise Technology Limited Company does not convey any license under its patent rights or other rights nor the rights of others. Main Site: - Headquarter Sanrise Technology Limited Company Rm.601~603, Building B, SDG Information Port, No.2, Kefeng Road, Science & Technology Park, Nanshan District, ShenZhen, P.R.China Tel: Fax: Shanghai Office Sanrise Technology Limited Company Rm.412, Building 3, No. 1690, Cailun Road, Zhangjiang Hi-Tech Park, Shanghai, P.R.China Tel:
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UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
More informationTO-220SF. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW MN 12N65DA SW12N65DA TO-220SF TUBE. Symbol Parameter Value Unit
Features High ruggedness Low R DS(ON) (Typ 0.75Ω)@V GS =10V Low Gate Charge (Typ 43nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, Charge, PC Power Order Codes Absolute maximum ratings
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UNISONIC TECHNOLOGIES CO., LTD 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
More informationUNISONIC TECHNOLOGIES CO., LTD UTT52N15H
UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
More informationValue TO220 TO220F TO251N TO252 TO262 TO220SF V DSS Drain to source voltage 650 V
Features High ruggedness Low R DS(ON) (Typ 0.36Ω)@V GS =10V Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, Charge, PC Power Order Codes Absolute maximum ratings
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UNISONIC TECHNOLOGIES CO., LTD 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS
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UNISONIC TECHNOLOGIES CO., LTD 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,
More informationProduct Summary. BV DSS typ. 84 V R DS(ON) max. 8.0 mω I D 80 A
SIAI N-Channel Enhancement Mode Power MOSFET General Description The S75NF75 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use
More informationFeatures. Information I-PAK G D S. Marking. Part Number. Package. I-PAK (Short Lead) SMK0160. Unit. V Gate-source voltage T c =25 C I D I DM
Features SWITCHING REGULATO OR APPLICATION Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g = 3.9nC (Typ.) Low drain-source On resistance: R DS(on) =11.5Ω (Max.) 100% avalanche
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UNISONIC TECHNOLOGIES CO., LTD 7A, 700V N-CHANNEL POWER MOSFET TO-220 TO-220F DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
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UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More informationT C =25 unless otherwise specified
WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
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UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced
More informationGP1M018A020CG GP1M018A020PG
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP1M18A2CG N-channel MOSFET BS R DS(on) MAX 2V 18A
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
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TSP13N50M / TSF13N50M 600V N-Channel MOSFET General Description This Power MOSFET is produced using True semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More informationPFP15T140 / PFB15T140
FEATURES 1% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower R DS(ON) : 6. mω (Typ.) @ =1V 15V N-Channel
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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UNISONIC TECHNOLOGIES CO., LTD 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More informationSMK1360FD Advanced N-Ch Power MOSFET
Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features BV DDS =600V (Min.) Low gate charge: Q g =41nC (Typ.) Low drain-source On resistance: R DS(on) =0.65Ω (Max.) 100% avalanche tested RoHS
More informationUNISONIC TECHNOLOGIES CO., LTD 02NM60 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 02NM60 Preliminary Power MOSFET 0.2A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 02NM60 is an Super Junction MOSFET Structure and is designed to have better
More informationFeatures. Information SOT-223. Part Number. Marking. Package SOT-223 SNN01Z60. Unit. V Gate-source voltage A A I DM T c =25 C I D.
Logic Level Gate Drive Application SNN01Z60Q Logic Level N-Ch Power MOSFET Features Logic levell gate drive Max. R DS(ON N) = 135mΩ at V GS = 10V, I D = 0.5A Low R DS(on) provides higher efficiency ESD
More informationUNISONIC TECHNOLOGIES CO., LTD 3N80
UNISONIC TECHNOLOGIES CO., LTD 3N8 3. Amps, 8Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N8 provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable
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STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packages Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT TO-220FP
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Lonten N-channel 650V, 11A, 0.38Ω TM Power MOSFET Description TM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially
More informationTSF18N60MR TSF18N60MR. 600V N-Channel MOSFET. Features. Absolute Maximum Ratings. Thermal Resistance Characteristics
600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state
More information200V N-Channel MOSFET
2V N-Channel MOSFET TMA18N2H,TMP18N2H FEATURES Fast switching 1% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor
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