Symbol SRC60R030. T: TO-247 TR: Tape & Reel

Transcription

1 General Description The Sanrise is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding efficiency. The break down voltage is 600V and it has a high rugged avalanche characteristics. The is available in TO-247 package. Features Ultra Low R DS(ON) = V GS = 10V. Ultra Low Gate Charge, Qg=225nC typ. Fast switching capability Robust design with better EAS performance Application AC/DC Power Supply EV Charger Sever / Telecom Solar Inverter Symbol Package Type Figure 1 Symbol of TO-247 Figure 2 Package Type of Ordering Information Circuit Type E: Lead Free G: Green Package Blank: Tube T: TO-247 TR: Tape & Reel Part Number Marking ID Package Packing Type Lead Free Green Lead Free Green TO-247 T-E T-G TE TG Tube

2 Absolute Maximum Ratings Parameter Symbol Rating Unit Drain-Source Voltage (Note2) V DSS 630 V Gate-Source Voltage V GSS ±30 V T C =25ºC 104 Continuous Drain Current T C =100ºC I D 65.8 A T C =125ºC 46.6 Pulsed Drain Current (Note 3) I DM 312 A Avalanche Energy, Single Pulse (Note 4) E AS 2200 mj Avalanche Energy, Repetitive (Note 3) E AR 2.3 mj Avalanche Current, Repetitive (Note 3) I AR 12 A Continuous Diode Forward Current I S 104 A Diode Pulse Current I S.PULSE 312 A MOSFET dv/dt Ruggedness, V DS <=480V dv/dt 50 V/ns Reverse Diode dv/dt, V DS <=480V, I SD <=I D dv/dt 15 V/ns Operating Junction Temperature T J 150 ºC Storage Temperature T STG -55 to 150 ºC Lead Temperature (Soldering, 10 sec) T LEAD 260 ºC Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. For Transient Voltage Spike. 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. I AS = 12A, V DD = 60V, R G = 25Ω, Starting T J = 25 C

3 Electrical Characteristics T J = 25, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Statistic Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V, I D =250uA 600 V Zero Gate Voltage Drain Current I DSS V DS =600V, V GS =0V 10 ua Gate-Body Leakage Current Forward I GSSF V GS =30V, V DS =0V 100 na Reverse I GSSR V GS =-30V, V DS =0V -1.0 ua Gate Threshold Voltage V GS(TH) V DS =V GS, I D =2.4mA V Static Drain-Source On-Resistance R DS(ON) V GS =10V, I D =33.1A mω Gate Resistance R G f=1mhz, Open Drain 1.1 Ω Dynamic Characteristics Input Capacitance C ISS 7000 V DS =50V, V GS =0V, Output Capacitance C OSS 482 f=1mhz Reverse Transfer Capacitance C RSS 10.8 pf Effective output capacitance, energy related NOTE5 C O(er) V GS =0V, V DS =0 480V Effective output capacitance, time related NOTE6 C O(tr) 1290 Turn-on Delay Time t d(on) 21 Rise Time t r V DD =400V, I D =50A 30 Turn-off Delay Time t d(off) R G =1.8Ω, V GS =10V 94 ns Fall Time t f 12 Gate Charge Characteristics Gate to Source Charge Q gs 53 Gate to Drain Charge Q gd V DD =480V, I D =50A 76 nc Gate Charge Total Q g V GS =0 to 10V 225 Gate Plateau Voltage V plateau 5.8 V Reverse Diode Characteristics Drain-Source Diode Forward Voltage V SD V GS =0V, I SD =33.1A V Reverse Recovery Time t rr 800 ns V R =100V, I F =50A Reverse Recovery Charge Q rr 25.2 uc di F /dt=100a/us Peak Reverse Recovery Current I rrm 63 A Note: 5. C O(er) is a fixed capacitance that gives the same stored energy as C OSS while V DS is rising from 0 to 480V 6. C O (tr) is a fixed capacitance that gives the same charging time as C OSS while V DS is rising from 0 to 480 V 248 pf

4 Typical Performance Characteristics Figure 3: Power Dissipation Figure 4: Max. Transient Thermal Impedance TO-247 TO-247 P tot = f(t c ) Z( thjc ) = f(t p ); parameter: D = t p /T Figure 5: Safe Operating Area Figure 6: Safe Operating Area I D = f(v DS ); T c = 25ºC; V GS >7V; parameter t p I D = f(v DS ); T c = 80ºC; V GS >7V; parameter t p

5 Figure 7: Typ. Output Characteristics Figure 8: Typ. Output Characteristics I D = f(v DS ); Tj= 25ºC; parameter: V GS I D = f(v DS ); T j = 125ºC; parameter: V GS Figure 9: Typ. Drain-Source On-State Resistance Figure 10: Typ. Drain-Source On-State Resistance R DS(ON) =f(i D ); T j =125ºC; parameter: V GS R DS(ON) =f(t j ); I D =33.1A; V GS =10V

6 Figure 11: Typ. Transfer Characteristics Figure 12: Typ. Gate Charge I D = f(v GS ); V DS = 20V V GS = f(q gate ), I D = 50A pulsed Figure 13: Drain-Source Breakdown Voltage Figure 14: Forward Characteristics of Reverse Diode V BR(DSS) =f(t j ); I D =1mA I F =f(v SD ); parameter: T j

7 Figure 15: Avalanche Energy Figure 16: Typ. Capacitances E AS =f(t j ); I D =12A; V DD =60V C=f(V DS ); V GS =0; f=1mhz Figure 17: C OSS Stored Energy E OSS =f(v DS )

8 Test Circuits 1. Gate Charge Test Circuit & Waveform 2. Switch Time Test Circuit 3. Unclaimed Inductive Switching Test Circuit & Waveforms

9 4. Test Circuit and Waveform for Diode Characteristics

10 Mechanical Dimensions TO-247 Unit: mm Symbol Dimensions(mm) Dimensions(mm) Symbol Min. Typ. Max. Min. Typ. Max. A E A E A e 5.44(BSC) b L b L b P c P D P D Q D S E T E U

11 Sanrise Technology Limited Company IMPORTANT NOTICE Sanrise Technology Limited Company reserves the right to make changes without further notice to any products or specifications herein. Sanrise Technology Limited Company does not assume any responsibility for use of any its products for any particular purpose, nor does Sanrise Technology Limited Company assume any liability arising out of the application or use of any its products or circuits. Sanrise Technology Limited Company does not convey any license under its patent rights or other rights nor the rights of others. Main Site: - Headquarter Sanrise Technology Limited Company Rm.601~603, Building B, SDG Information Port, No.2, Kefeng Road, Science & Technology Park, Nanshan District, ShenZhen, China Tel: Fax: Shanghai Office Sanrise Technology Limited Company Rm.412, Building 3, No. 1690, Cailun Road, Zhangjiang Hi-Tech Park, Shanghai, P.R.China Tel: