Datasheet. 230mΩ, 700V, Super Junction N-Channel Power MOSFET. General Description. Symbol. Package Type. Features. Application. Ordering Information

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1 General Description The Sanrise is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding efficiency. The break down voltage is 700V and it has a high rugged avalanche characteristics. The is available in TO-220F, TO- 220C and TO-247 packages. Symbol Package Type Figure 1 Symbol of Features Ultra Low R DS(ON) = V GS = 10V. Ultra Low Gate Charge, Qg=38nC typ. Fast switching capability Robust design with better EAS performance EMI Improved TO-220F TO-220C Application UPS, Inverter, etc Solar TV Power High Power AC/DC Power Supply TO-247 Figure 2 Package Types of Ordering Information Circuit Type Package TF: TO-220F TC: TO-220C T: TO-247 E: Lead Free G: Green Blank: Tube TR: Tape & Reel Part Number Marking ID Package Packing Type Lead Free Green Lead Free Green TO-220F TF-E TF-G TFE TFG Tube TO-220C TC-E TC-G TCE TCG Tube TO-247 T-E T-G TE TG Tube

2 Absolute Maximum Ratings Parameter Symbol Rating Unit Drain-Source Voltage V DSS 730 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current T C =25ºC 18.3 I T D C =125ºC 8.3 A Pulsed Drain Current (Note 2) I DM 55 A Avalanche Energy, Single Pulse (Note 3) E AS 500 mj Avalanche Energy, Repetitive (Note 2) E AR 0.7 mj Avalanche Current, Repetitive (Note 2) I AR 3.6 A Continuous Diode Forward Current I S 18.3 A Diode Pulse Current I S.PULSE 55 A Operating Junction Temperature T J 150 ºC Storage Temperature T STG -55 to 150 ºC Lead Temperature (Soldering, 10 sec) T LEAD 300 ºC Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. I AS = 3.6A, V DD = 60V, R G = 25Ω, Starting T J = 25 C

3 Electrical Characteristics T J = 25 ºC, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS V GS =0V, I D =250uA 700 V Zero Gate Voltage Drain Current I DSS V DS =700V, V GS =0V 1 ua Gate-Body Leakage Current Forward I GSSF V GS =30V, V DS =0V 100 na Reverse I GSSR V GS =-30V, V DS =0V -1.0 ua Gate Threshold Voltage V GS(TH) V DS =V GS, I D =250uA V Static Drain-Source On-Resistance R DS(ON) V GS =10V, I D =8.0A mω Gate Resistance R G f=1mhz, Open Drain 1.7 Ω Dynamic Characteristics Input Capacitance C ISS 1650 V DS =50V, V GS =0V, Output Capacitance C OSS 170 f=1mhz Reverse Transfer Capacitance C RSS 18 pf Effective output capacitance, energy related NOTE4 C O(er) V GS =0V, 88 Effective output capacitance, time V DS =0 480V related NOTE5 C O(tr) 263 pf Turn-on Delay Time t d(on) 11 Rise Time t r V DD =400V, I D =8.0A 10 Turn-off Delay Time t d(off) R G =3.4Ω, V GS =10V 76 ns Fall Time t f 8 Gate Charge Characteristics Gate to Source Charge Q gs 10.6 Gate to Drain Charge Q gd V DD =480V, I D =8.0A 12.2 nc Gate Charge Total Q g V GS =0 to 10V 38 Gate Plateau Voltage V plateau 5.5 V Reverse Diode Characteristics Drain-Source Diode Forward Voltage V SD V GS =0V, I SD =8.0A V Reverse Recovery Time t rr 330 ns V R =400V, I F =8.0A Reverse Recovery Charge Q rr 4.5 uc di F /dt=100.0a/us Peak Reverse Recovery Current I rrm 27 A Note: 4. C O(er) is a fixed capacitance that gives the same stored energy as C OSS while V DS is rising from 0 to 480V 5. C O (tr) is a fixed capacitance that gives the same charging time as C OSS while V DS is rising from 0 to 480 V

4 Typical Performance Characteristics Figure 1: Power Dissipation Figure 2: Max. Transient Thermal Impedance TO-247 TO-247 P tot = f(t c ) Z( thjc ) = f(t p ); parameter: D = t p /T Figure 3: Safe Operating Area Figure 4: Safe Operating Area I D = f(v DS ); T c = 25ºC; V GS >7V; parameter t p I D = f(v DS ); T c = 80ºC; V GS >7V; parameter t p

5 Figure 5: Typ. Output Characteristics Figure 6: Typ. Output Characteristics I D = f(v DS ); Tj= 25ºC; parameter: V GS I D = f(v DS ); T j = 125ºC; parameter: V GS Figure 7: Typ. Drain-Source On-State Resistance Figure 8: Typ. Drain-Source On-State Resistance R DS(ON) =f(i D ); T j =125ºC; parameter: V GS R DS(ON) =f(t j ); I D =8A; V GS =10V

6 Figure 9: Typ. Transfer Characteristics Figure 10: Typ. Gate Charge I D = f(v GS ); V DS = 20V V GS = f(q gate ), I D = 8A pulsed Figure 11: Drain-Source Breakdown Voltage Figure 12: Forward Characteristics of Reverse Diode V BR(DSS) =f(t j ); I D =1mA I F =f(v SD ); parameter: T j

7 Figure 13: Avalanche Energy Figure 14: Typ. Capacitances E AS =f(t j ); I D =3.6A; V DD =60V C=f(V DS ); V GS =0; f=1mhz Figure 15: C OSS Stored Energy E OSS =f(v DS )

8 Test Circuits 1. Gate Charge Test Circuit & Waveform 2. Switch Time Test Circuit 3. Unclaimed Inductive Switching Test Circuit & Waveforms

9 4. Test Circuit and Waveform for Diode Characteristics

10 Mechanical Dimensions TO-220F Unit: mm Symbol Dimensions(mm) Min. Typ. Max. A A A A b b c D D E E e 2.54(BSC) H (H1) - (0.81) - L L ΦP Q

11 Mechanical Dimensions (Continued) TO-220C Unit: mm Symbol Dimensions(mm) Min. Typ. Max. A A A b b c D D E e 2.54(BSC) L L ΦP Q

12 Mechanical Dimensions (Continued) TO-247 Unit: mm Symbol Dimensions(mm) Dimensions(mm) Symbol Min. Typ. Max. Min. Typ. Max. A E A E A e 5.44(BSC) b L b L b P c P D P D Q D S E T E U

13 Sanrise Technology Limited Company IMPORTANT NOTICE Sanrise Technology Limited Company reserves the right to make changes without further notice to any products or specifications herein. Sanrise Technology Limited Company does not assume any responsibility for use of any its products for any particular purpose, nor does Sanrise Technology Limited Company assume any liability arising out of the application or use of any its products or circuits. Sanrise Technology Limited Company does not convey any license under its patent rights or other rights nor the rights of others. Main Site: - Headquarter Sanrise Technology Limited Company Rm.601~603, Building B, SDG Information Port, No.2, Kefeng Road, Science & Technology Park, Nanshan District, ShenZhen, China Tel: Fax: Shanghai Office Sanrise Technology Limited Company No. 1159, Cailun Road, Zhangjiang HiTech Park, Pudong District, Shanghai, China Tel: