2N/PN/SST4391 Series. N-Channel JFETs. Vishay Siliconix 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393

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1 2N/PN/SST49 Series N-Channel JFETs 2N49 PN49 SST49 2N492 PN492 SST492 2N49 PN49 SST49 Part Number GS(off) () r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) 2N/PN/SST49 4 to 5 4 2N/PN/SST492 2 to N/PN/SST49.5 to 5 4 Low On-Resistance: 49< Fast Switching t ON : 4 ns High Off-Isolation: I D(off) with Low Leakage Low Capacitance: <.5 pf Low Insertion Loss Low Error oltage High-Speed Analog Circuit Performance Negligible Off-Error, Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally On Switches Current Limiters Commutators The 2N/PN/SST49 series features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier circuits. The 2N series hermetically-sealed TO-26AA (TO-8) can is available with processing per MIL-S-95 (see Military Information). Both the PN, TO-226AA (TO-92), and SST, TO-26 (SOT-2), series are available in tape-and-reel for automated assembly (see Packaging Information). For similar dual products, see the 2N5564/5565/5566 data sheet. S TO-26AA (TO-8) D TO-226AA (TO-92) TO-26 (SOT-2) S 2 D G D 2 G and Case G S 2 Top iew 2N49 2N492 2N49 For applications information see AN4 and AN6. Top iew PN49 PN492 PN49 Top iew SST49 (CA)* SST492 (CB)* SST49 (CC)* *Marking Code for TO-26 Document Number: 724 S-428 Rev. F, 4-Jan- 7-

2 2N/PN/SST49 Series Gate-Drain, Gate-Source oltage: (2N/PN Prefixes) (SST Prefix) Gate Current ma Lead Temperature C Storage Temperature : (2N Prefix) to 2 C (PN/SST Prefixes) to 5 C Operating Junction Temperature : (2N Prefix) to 2 C (PN/SST Prefixes) to 5 C Power Dissipation : (2N Prefix) a (T C = 25 C) 8 mw (PN/SST Prefixes) b mw Notes a. Derate mw/ C above 25 C b. Derate 2.8 mw/ C above 25 C Static Limits Parameter Symbol Test Conditions Typ a Min Max Min Max Min Max Unit Gate-Source Breakdown oltage Gate-Source Cutoff oltage (BR)GSS I G = A, DS = DS = 2 2N/PN: I D = na GS(off) DS = 5 SST: I D = na N Saturation Drain Current b I = 2, = PN ma SST GS = 2 2N/SST 5 DS = PN 5 Gate Reverse Current I GSS 2N: T A = 5 C GSS PN: T A = C na SST: Gate Operating Current I G DG = 5, I D = ma 5 DS = 2 2N: GS = 5 5 2N: GS = 7 5 2N: GS = 2 5 PN: GS = 5.5 PN: GS = 7.5 na PN: GS = 2.5 SST DS =, GS = 5 pa Drain Cutoff Current I D(off) 2N: GS = 5 2 DS = 2 2N: GS = 7 2 T A = 5 C 2N: GS = 2 2 DS = 2 T A = C DS = PN: GS = 5 2 PN: GS = 7 2 PN: GS = 2 2 SST: GS = I D = ma.25.4 Drain-Source = I D = 6 ma..4 On-oltage DS(on) GS I D = 2 ma.5.4 Drain-Source r On-Resistance DS(on) GS =, I D = ma 6 Gate-Source I 2N.7 G = ma Forward oltage GS(F) DS = PN/SST.7 pa pa na 7-2 Document Number: 724 S-428 Rev. F, 4-Jan-

3 2N/PN/SST49 Series Dynamic Limits Parameter Symbol Test Conditions Typ a Min Max Min Max Min Max Unit Forward Transconductance Output Conductance g fs 6 ms DS = 2, I D = ma, f = khz g os 25 S Drain-Source On-Resistance r DS(on) GS =, I D = ma, f = khz 6 2N C DS = 2, GS = Input Capacitance iss f = MHz PN SST 2N: GS = 5..5 Reverse Transfer C DS = rss f = MHz Capacitance Equivalent Input Noise oltage Switching Turn-On Time Turn-Off Time e n 2N: GS = N: GS = PN: GS = PN: GS = PN: GS = 2. 5 SST: GS = 5.6 SST: GS = 7.5 SST: GS = 2. DS =, I D = ma f = khz t d(on) SST 2 2N/PN N/PN t r DD = SST 2 t d(off) GS(H) = See Switching Circuit 2N/PN SST 6 t f 2N/PN 5 2 SST pf n Hz ns Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB b. Pulse test: PW s duty cycle %. Document Number: 724 S-428 Rev. F, 4-Jan- 7-

4 2N/PN/SST49 Series r DS(on) Drain-Source On-Resistance ( Ω ) On-Resistance and Drain Current vs. Gate-Source Cutoff oltage r I D = ma, GS = I DS = 2, GS = r DS I DSS I DSS Saturation Drain Current (ma) r DS(on) Drain-Source On-Resistance ( Ω ) On-Resistance vs. Drain Current GS(off) Gate-Source Cutoff oltage () r DS(on) Drain-Source On-Resistance ( Ω ) On-Resistance vs. Temperature I D = ma r DS changes X.7%/ C 4 8 Switching Time (ns) t r t I D = ma Turn-On Switching t r approximately independent of I D DD = 5, R G = 5 W GS(L) = t I D = 2 ma T A Temperature (_C) GS(off) Gate-Source Cutoff oltage () Turn-Off Switching Capacitance vs. Gate-Source oltage 24 t d(off) independent of device GS(off) DD = 5, GS(L) = 24 f = MHz DS = Switching Time (ns) 8 2 t d(off) t f Capacitance (pf) 8 2 C iss 6 GS(off) = 8 6 C rss GS Gate-Source oltage () Document Number: 724 S-428 Rev. F, 4-Jan-

5 2N/PN/SST49 Series en Noise oltage n / Hz Noise oltage vs. Frequency DS = I D = ma I D = ma g fs Forward Transconductance Forward Transconductance and Output onductance vs. Gate-Source Cutoff oltage* 5 5 g fs and g DS = 2 GS =, f = khz 4 2 g fs g os gos Output Conductance (µs) k k k f Frequency (Hz) GS(off) Gate-Source Cutoff oltage () na na Gate Leakage Current I 25 C I D = ma Common-Gate Input Admittance DG = I D = ma g ig I G Gate Leakage) pa pa ma ma ma I 25 C b ig pa. pa I I D DG Drain-Gate oltage (). 2 5 Common-Gate Forward Admittance DG = I D = ma Common-Gate Reverse Admittance DG = I D = ma g fg b fg. b rg g fg g rg +g rg Document Number: 724 S-428 Rev. F, 4-Jan- 7-5

6 2N/PN/SST49 Series Common-Gate Output Admittance DG = I D = ma b og g og g fs Forward Transconductance Transconductance vs. Drain Current 25 C 25 C DS = f = khz TA = 55 C GS(off) = 4 Output Characteristics Transfer Characteristics GS(off) = 4 DS = T A = 55 C 6 4 GS = C C DS Drain-Source oltage () GS Gate-Source oltage () DD R L OUT GS(H) GS(L) R L * 8 6 I D(on) 2 ma 6 ma ma GS(L) kω 5 Ω *Non-inductive Rise Time < ns Fall Time < ns Pulse Width ns PRF MHz Rise Time.4 ns Input Resistance M Input Capacitance.5 pf IN Scope 5 Ω See Typical Characteristics curves for changes. 7-6 Document Number: 724 S-428 Rev. F, 4-Jan-

2N3819. N-Channel JFET. Vishay Siliconix. V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I DSS Min (ma)

2N3819. N-Channel JFET. Vishay Siliconix. V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I DSS Min (ma) N9 N-Channel JFET V GS(off) (V) V (BR)GSS Min (V) g fs Min I DSS Min (ma) 5 Excellent High-Frequency Gain: Gps db @ MHz Very Low Noise: db @ MHz Very Low Distortion High ac/dc Switch Off-Isolation High