J/SST/U308 Series. N-Channel JFETs. Vishay Siliconix J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS

Transcription

1 J/SST/U8 Series N-Channel JFETs J8 SST8 U9 J9 SST9 U J SST PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I DSS Min (ma) J8 to J9 to 25 J 2 to SST8 to SST9 to 25 SST 2 to U9 to 25 U 2.5 to 25 2 FEATURES BENEFITS APPLICATIONS Excellent High Frequency Gain: Gps.5 5 MHz Very Low Noise: MHz Very Low Distortion High ac/dc Switch Off-Isolation Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The J/SST/U8 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 5 MHz, this series offers high power gain at low noise. Low-cost J series TO-22AA (TO-92) packaging supports automated assembly with tape-and-reel options. The SST series TO-2 (SOT-2) package provides surface-mount capabilities and is available with tape-and-reel options. The U series hermetically-sealed TO-2AC (TO-52) package supports full military processing. (See Military and Packaging Information for further details.) For similar dual products packaged in the TO-78, see the U/ data sheet. TO-22AA (TO-92) TO-2 (SOT-2) TO-2AC (TO-52) D S 2 D S 2 G S G Top View J8 J9 J Top View SST8 (Z8)* SST9 (Z9)* SST (Z)* *Marking Code for TO-2 D 2 Top View U9 U G and Case For applications information see AN. Document Number: 727 S-59 Rev. H, 2-Jan-5

2 J/SST/U8 Series ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage V Gate Current : (J/SST Prefixes) ma (U Prefix) ma Lead Temperature ( / from case for sec.) C Storage Temperature : (J/SST Prefixes) to 5 C (U Prefix) to 75 C Operating Junction Temperature to 5 C Power Dissipation : (J/SST Prefixes) a mw (U Prefix) b mw Notes a. Derate 2.8 mw/ C above b. Derate mw/ C above SPECIFICATIONS FOR J/SST8, J/SST9 AND J/SST (T A = UNLESS NOTED) Static Gate-Source Breakdown Voltage Limits J/SST8 J/SST9 J/SST Parameter Symbol Test Conditions Typ a Min Max Min Max Min Max Unit V (BR)GSS I G = A, V DS = V V Gate-Source Cutoff Voltage V GS(off) V DS = V, I D = na V Saturation Drain Current b I DSS V DS = V, V GS = V 2 ma Gate Reverse Current I GSS T A = 5 C. A V GS = 5 V, V DS = V.2 na Gate Operating Current I G V DG = 9 V, I D = ma 5 pa Drain-Source On-Resistance r DS(on) V GS = V, I D = ma 5 Gate-Source Forward Voltage V GS(F) I G = ma V DS = V Dynamic Forward Transconductance Output Conductance Input Capacitance Reverse Transfer Capacitance Equivalent Input Noise Voltage High Frequency Common-Gate Forward Transconductance g fs g os V DS = V, I D = ma f = khz J.7 V 8 8 ms S C iss V DS = V SST J C rss V GS = V f = MHz J SST.9 e n V DS = V, I D = ma f = Hz g fg f = 5 MHz f = 5 MHz Common-Gate f = 5 MHz. g Output Conductance og V f = 5 MHz.55 DS = V I D = ma f = 5 MHz Common-Gate Power Gain c G pg f = 5 MHz.5 Noise Figure NF f = 5 MHz.5 f = 5 MHz 2.7 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZB b. Pulse test: PW s duty cycle %. c. Gain (G pg ) measured at optimum input noise match. pf nv Hz ms db 2 Document Number: 727 S-59 Rev. H, 2-Jan-5

3 J/SST/U8 Series SPECIFICATIONS FOR U9 AND U (T A = UNLESS NOTED) Limits U9 U Parameter Symbol Test Conditions Typ a Min Max Min Max Unit Static Gate-Source Breakdown Voltage V (BR)GSS I G = A, V DS = V V Gate-Source Cutoff Voltage V GS(off) V DS = V, I D = na 2.5 V Saturation Drain Current b I DSS V DS = V, V GS = V 2 ma Gate Reverse Current I GSS T A = 5 C..5.5 A V GS = 5 V, V DS = V na Gate Operating Current I G V DG = 9 V, I D = ma 5 pa Drain-Source On-Resistance r DS(on) V GS = V, I D = ma 5 Gate-Source Forward Voltage V GS(F) I G = ma, V DS = V.7 V Dynamic Forward Transconductance Output Conductance g fs g os V DS = V, I D = ma f = khz ms S Input Capacitance Reverse Transfer Capacitance C iss C rss V DS = V, V GS = V f = MHz pf Equivalent Input Noise Voltage e n V DS = V, I D = ma f = Hz High Frequency nv Hz f = 5 MHz Common-Gate g Forward Transconductance fg f = 5 MHz f = 5 MHz. Common-Gate g Output Conductance og f = 5 MHz.55 V DS = V I D = ma f = 5 MHz Common Gate Power Gain c, d G Common-Gate Power Gain c, d G pg f = 5 MHz.5 ms Noise Figure d NF f = 5 MHz f = 5 MHz db Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZB b. Pulse test: PW s duty cycle %. c. Gain (G pg ) measured at optimum input noise match. d. Not a production test. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 727 S-59 Rev. H, 2-Jan-5

4 J/SST/U8 Series TYPICAL CHARACTERISTICS (T A = UNLESS OTHERWISE NOTED) I DSS Saturation Drain Current (ma) 8 2 Drain Current and Transconductance vs. Gate-Source Cutoff Voltage I V DS = V, V GS = V g V DS = V, V GS = V f = khz g fs I DSS 5 2 g fs Forward Transconductance (ms) I G Gate Leakage na na pa pa pa Gate Leakage Current G I D = ma 2 ma T A = 5 C I 5 C 2 ma ma T A = I 2 5. pa 9 5 V GS(off) Gate-Source Cutoff Voltage (V) V DG Drain-Gate Voltage (V) r DS(on) Drain-Source On-Resistance ( Ω ) 8 2 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage r I D = ma, V GS = V g V DS = V, V GS = V, f = khz r DS 2 g os g os Output Conductance ( S) g fs Forward Transconductance (ms) 2 8 Forward Transconductance vs. Drain Current 5 C V DS = V f = khz. V GS(off) Gate-Source Cutoff Voltage (V) 5 V GS(off) =.5 V Output Characteristics V GS = V 2 Output Characteristics V GS = V 9.2 V. V. V 8. V.8 V.2 V. V.8 V 2. V. V V V DS Drain-Source Voltage (V) V DS Drain-Source Voltage (V) Document Number: 727 S-59 Rev. H, 2-Jan-5

5 J/SST/U8 Series TYPICAL CHARACTERISTICS (T A = UNLESS OTHERWISE NOTED) g fs Forward Transconductance (ms) V GS(off) =.5 V V GS(off) =.5 V Transfer Characteristics 5 C Transconductance vs. Gate-Source Voltage V GS(off) =.5 V 5 C Output Characteristics V GS = V V DS Drain-Source Voltage (V).2 V. V. V.8 V. V 2 8 V DS = V V DS = V f = khz g fs Forward Transconductance (ms) Output Characteristics C V DS Drain-Source Voltage (V) Transfer Characteristics V GS = V. V.8 V.2 V. V 2. V 2. V Transconductance vs. Gate-Source Voltage 5 C V DS = V V DS = V f = khz Document Number: 727 S-59 Rev. H, 2-Jan-5 5

6 J/SST/U8 Series TYPICAL CHARACTERISTICS (T A = UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current r DS(on) Drain-Source On-Resistance ( Ω ) 8 2 V GS(off) =.5 V A V Voltage Gain 8 2 g fs R L A V R L g os Assume V DD = 5 V, V DS = 5 V R L V I D V GS(off) =.5 V. 5 Input Capacitance vs. Gate-Source Voltage Reverse Feedback Capacitance vs. Gate-Source Voltage f = MHz f = MHz C iss Input Capacitance (pf) 9 V DS = V V DS = 5 V 8 2 C rss Reverse Feedback Capacitance (pf) 8 2 V DS = V V DS = 5 V 8 2 Input Admittance vs. Frequency Forward Admittance vs. Frequency g ig g fg (ms) b ig (ms) b fg T A = V DG = V I D = ma Common Gate T A = V DG = V I D = ma Common Gate f Frequency (MHz) f Frequency (MHz) Document Number: 727 S-59 Rev. H, 2-Jan-5

7 J/SST/U8 Series TYPICAL CHARACTERISTICS (T A = UNLESS OTHERWISE NOTED) Reverse Admittance vs. Frequency T A = V DG = V I D = ma Common Gate Output Admittance vs. Frequency T A = V DG = V I D = ma Common Gate b og (ms) b rg +g rg (ms). g rg g og f Frequency (MHz) f Frequency (MHz) 2 Equivalent Input Noise Voltage vs. Frequency 5 Output Conductance vs. Drain Current en Noise Voltage nv / Hz 8 V DS = V I D = ma I D = ma gos Output Conductance (µs) 9 V DS = V f = khz 5 C k k k f Frequency (Hz). Document Number: 727 S-59 Rev. H, 2-Jan-5 7

8 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8