MOSFET SI4558DY (KI4558DY)

Transcription

1 Features SOP- N-Channel:VDS=3V ID=A RDS(ON) < 4mΩ (VGS = V) RDS(ON) < mω (VGS = 4.5V) P-Channel:VDS=-3V ID=-A.5.5 RDS(ON) < 4mΩ (VGS =-V) RDS(ON) < 7mΩ (VGS =-4.5V) Source Gate 3 Source 4 Gate 5 Drain Drain 7 Drain Drain D S S Absolute Maximum Ratings Ta = 5 G G Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TJ=5 (Note.) Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-ambient (Note.) Junction Temperature Storage Temperature Range Symbol N-Channel P-Channel Unit VDS 3-3 VGS Ta = 5 - Ta = Ta = 5 Ta = 7 ID IDM PD RthJA TJ Tstg ± to 5 V A W /W Note.:Surface Mounted on FR4 Board, t sec. Marking Marking 455 KA****

2 Electrical Characteristics Ta = 5 Parameter Symbol Test Conditions Type Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=5μA, VGS=V N-CH 3 V ID=-5μA, VGS=V P-CH -3 Zero Gate Voltage Drain Current VDS=3V, VGS=V N-CH VDS=-3V, VGS=V P-CH - VDS=V, VGS=V,TJ=7 N-CH 5 VDS=-V, VGS=V,TJ=7 P-CH -5 Gate-Body Leakage Current IGSS VDS=V, VGS=±V ± na Gate Threshold Voltage VGS(th) VDS=VGS, ID=5μA N-CH V VDS=VGS, ID=-5μA P-CH - Static Drain-Source On-Resistance (Note.) VGS=V, ID=A N-CH 3 4 VGS=4.5V, ID=4.A 45 VGS=-V, ID=-A P-CH 3 4 VGS=-4.5V, ID=-4.4A 5 7 VDS=5V, VGS=V N-CH 3 On-State drain Current (Note.) ID(On) VDS=-5V, VGS=-V P-CH -3 A VDS=5V, VGS=4.5V N-CH Forward Transconductance (Note.) Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Maximum Body-Diode Continuous Current Diode Forward Voltage (Note.) IDSS RDS(On) gfs Qg Qgs Qgd td(on) tr td(off) VSD Note.: Pulse test; pulse width 3 us, duty cycle %. tf trr IS VDS=-5V, VGS=-4.5V P-CH - VDS=5V, ID=A N-CH 3 VDS=-5V, ID=-A P-CH. N-CH 3 N-Channel: P-CH 35 VGS=V, VDS=5V, ID=A N-CH 3.4 P-Channel: P-CH 5.4 VGS=-V, VDS=-5V, ID=-A N-CH.3 P-CH 3. N-CH 5 N-Channel: P-CH 5 VGS=V, VDS=5V, ID=A, RG=Ω N-CH 5 RL=5Ω P-CH 5 P-Channel: N-CH 7 55 VGS=-V, VDS=-5V, ID=-A, RG=Ω P-CH 3 55 RL=5Ω N-CH 5 P-CH 5 5 IF=A, di/dt=a/μs N-CH 45 IF=-A, di/dt=a/μs P-CH 5 N-CH P-CH - IS=A,VGS=V N-CH.77. IS=-A,VGS=V P-CH V μa mω S nc ns A

3 N- Typical Characterisitics 3 Output Characteristics 3 Transfer Characteristics V GS =, 9,, 7,, 5 V 4 V 3 V T C = 5 C 5 C 55 C On-Resistance vs. Drain Current 5 Capacitance rds(on) On-Resistance ( ) V DS = 5 V = A V GS = 4.5 V Gate Charge V GS = V C Capacitance (pf) rds(on) On-Resistance ( ) (Normalized) C rss C oss C iss On-Resistance vs. Junction Temperature V GS = V = A 4 Q g Total Gate Charge (nc) T J Junction Temperature ( C) 3

4 N- Typical Characterisitics 3 Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage Source Current (A) I S T J = 5 C T J = 5 C rds(on) On-Resistance ( )...4. = A V SD Source-to-Drain Voltage (V) VGS Gate-to-Source Voltage (V).4 Threshold Voltage 4 Single Pulse Power. = 5 A 3 VGS(th)Variance (V)...4 Power (W) T J Temperature ( C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = Single Pulse 3 3 Square Wave Pulse Duration (sec) Notes: P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = 5C/W 3. T JM T A = P DM Z (t) thja 4. Surface Mounted 4

5 P- Typical Characterisitics 3 Output Characteristics V GS =, 9,, 7,, 5 V 3 Transfer Characteristics T C = 55 C 5 C 4 V 5 C 3 V On-Resistance vs. Drain Current Capacitance rds(on) On-Resistance ( ) V DS = 5 V = A V GS = 4.5 V Gate Charge Q g Total Gate Charge (nc) V GS = V C Capacitance (pf) rds(on) On-Resistance ( ) (Normalized) C rss C oss C iss On-Resistance vs. Junction Temperature V GS = V = A T J Junction Temperature ( C) 5

6 P- Typical Characterisitics 3 Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage Source Current (A) I S T J = 5 C T J = 5 C rds(on) On-Resistance ( )...4. = A V SD Source-to-Drain Voltage (V) VGS Gate-to-Source Voltage (V). Threshold Voltage 4 Single Pulse Power VGS(th)Variance (V) = 5 A Power (W) T J Temperature ( C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance.. 4 Duty Cycle = Single Pulse 3 3 Square Wave Pulse Duration (sec) Notes: P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = 5 C/W 3. T JM T A = P DM Z (t) thja 4. Surface Mounted