Description TO-3PN D S. Symbol Parameter FDA18N50 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

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1 FDA18N50 N-Channel UniFET TM MOSFET 500 V, 19 A, 265 m Features R DS(on) = 265 m = 10 V, ID = 9.5 A Low Gate Charge (Typ. 45 nc) Low C rss (Typ. 25 pf) 100% Avalanche Tested Applications PDP TV Uninterruptible Power Supply AC-DC Power Supply Description UniFET TM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G D S Absolute Maximum Ratings TO-3PN G S Symbol Parameter FDA18N50 Unit S Drain-Source Voltage 500 V Drain Current - Continuous (T C = 25 C) - Continuous (T C = 100 C) M Drain Current - Pulsed (Note 1) 76 A S Gate-Source voltage 30 V E AS Single Pulsed Avalanche Energy (Note 2) 945 mj I AR Avalanche Current (Note 1) 19 A E AR Repetitive Avalanche Energy (Note 1) 23 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) - Derate above 25 C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDA18N50 Unit R JC Thermal Resistance, Junction-to-Case, Max R JA Thermal Resistance, Junction-to-Ambient, Max. 40 A A W W/ C C/W

2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDA18N50 FDA18N50 TO-3PN Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Conditions Min. Typ. Max Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0V, = 250 A 500 V BS Breakdown Voltage Temperature I / T J Coefficient D = 250 A, Referenced to 25 C 0.5 V/ C SS Zero Gate Voltage Drain Current = 500V, = 0V = 400V, T C = 125 C I GSSF Gate-Body Leakage Current, Forward = 30V, = 0V 100 na I GSSR Gate-Body Leakage Current, Reverse = -30V, = 0V -100 na On Characteristics (th) Gate Threshold Voltage =, = 250 A V R DS(on) Static Drain-Source On-Resistance = 10V, = 9.5A g FS Forward Transconductance = 40V, = 9.5A 25 S Dynamic Characteristics C iss Input Capacitance = 25V, = 0V, pf C oss Output Capacitance f = 1.0MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 250V, = 19A ns t r Turn-On Rise Time R G = ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4) ns Q g Total Gate Charge = 400V, = 19A nc Q gs Gate-Source Charge = 10V 12.5 nc Q gd Gate-Drain Charge (Note 4) 19 nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current 19 A I SM Maximum Pulsed Drain-Source Diode Forward Current 76 A V SD Drain-Source Diode Forward Voltage = 0V, I S = 19A 1.4 V t rr Reverse Recovery Time = 0V, I S = 19A 500 ns Q rr Reverse Recovery Charge di F /dt =100A/ s 5.4 C 1 10 A A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 4.7mH, I AS = 19A, V DD = 50V, R G = 25, Starting T J = 25 C 3. I SD 19A, di/dt 200A/ s, V DD BS, Starting T J = 25 C 4. Essentially Independent of Operating Temperature Typical Characteristics 2

3 Typical Performance Characteristics Figure 1. On-Region Characteristics V 10 2 GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V , Drain-Source Voltage [V] s Pulse Test 2. T C = 25 o C Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 2 Figure 2. Transfer Characteristics 25 o C 150 o C -55 o C , Gate-Source Voltage [V] 1. = 40V s Pulse Test Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue R DS(ON) [ ], Drain-Source On-Resistance = 10V = 20V * Note : T J = 25 o C R, Reverse Drain Current [A] o C 25 o C V SD, Source-Drain voltage [V] 1. = 0V s Pulse Test Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Capacitances [pf] C oss C iss C rss , Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd * Note : 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] = 100V = 250V = 400V * Note : = 18A Q G, Total Gate Charge [nc] 3

4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature BS, (Normalized) Drain-Source Breakdown Voltage T J, Junction Temperature [ o C] 1. = 0 V 2. = 250 A R DS(ON), (Normalized) Drain-Source On-Resistance = 10 V 2. = 9.5 A T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Operation in This Area is Limited by R DS(on) 10 2, Drain-Source Voltage [V] 1 ms 10 ms 100 ms DC 100 s 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 10 s T C, Case Temperature [ o C] Figure 11. Transient Thermal Response Curve Z JC (t), Thermal Response D= single pulse P DM t 1 t 2 * N otes : 1. Z JC (t) = 0.52 o C/W Max. 2. D uty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z JC (t) t 1, Square W ave Pulse Duration [sec] 4

5 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5

6 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6

7 Mechanical Dimensions TO-3PN Dimensions in Millimeters 7