arxiv: v2 [cond-mat.mes-hall] 10 Oct 2017

Transcription

1 On local sensing of spin Hall effec in ungsen films by using STM based measuremens Ting Xie, 1, Michael Dreyer, 2 David Bowen, 3 Dan Hinkel, 3 R. E. Buera, 3 Charles Kraff, 3 and Isaak Mayergoyz 1 arxiv: v2 [cond-ma.mes-hall] 1 Oc Deparmen of Elecrical and Compuer Engineering, Universiy of Maryland, College Park, Maryland 2742, USA 2 Deparmen of Physics, Universiy of Maryland, College Park, Maryland 2742, USA 3 Laboraory for Physical Sciences, College Park, Maryland, 274, USA (Daed: Ocober 11, 217) Absrac The spin Hall effec in ungsen films has been experimenally sudied by using STM-based measuremens. These measuremens have been performed by using ungsen and iron coaed ungsen ips. In he case of ungsen ips, i has been observed ha he curren flow hrough he ungsen film resuls in an appreciable asymmery in he unneling curren wih respec o he change in he polariy of he unneling volage. I is reasoned ha he cause of his asymmery is he accumulaion of spin polarized elecrons on he ungsen film surface due o he spin Hall effec. This asymmery is no affeced by he change of he direcion of he bias curren hrough he film. However, in he case of iron coaed ungsen ips, i has been observed ha a change in he direcion of he bias curren does lead o an addiional asymmery in he unneling curren. I is hus experimenally demonsraed ha his asymmery is caused by he SHE and spin-dependen densiy of saes of iron-coaed ips. 1

2 I. INTRODUCTION The spin Hall effec (SHE) has recenly araced much aenion due o is general heoreical ineres as well as is poenial echnological applicaions in he field of spinronics 1. The manifesaion of he SHE is he accumulaion of spin-polarized elecrons a he boundaries of curren-carrying samples 2,3. The srengh of he SHE is characerized by he spin Hall angle (SHA), which has been repored o be large in meals such as plainum, analum and ungsen 4. The surface accumulaion of spin-polarized elecrons may cause (hrough diffusion) he injecion of spin curren wihou he injecion of charge flow ino adjacen meallic layers. This promises he use of he SHE for he developmen of novel spinronic devices. In he lieraure, experimenal sudies of he SHE in semiconducors and meals have been performed by using opical measuremens 5,6 as well as spin-orque phenomena 7 9. In his paper, we demonsrae for he firs ime he sensing of spin dependen elecron unneling arising from he SHE in ungsen films by using scanning unneling microscopy (STM) based measuremens. The local sensiiviy of he nanomeer-scale STM unneling juncion and he abiliy o deec he accumulaion of spin polarized elecrons on he surface offers he possibiliy of idenifying spaial variaions in he srengh of he SHE in curren-carrying samples a he nanoscale. This may lead o a beer undersanding of he SHE. We performed he STM based measuremens of he SHE wih convenional ungsen ips as well as iron-coaed ungsen ips. In he case of ungsen ips, we observed an asymmery in he unneling currens for opposie polariy, bu idenical magniude, of he unneling volage in he presence of a bias curren flow hrough ungsen films. By precluding oher possible causes of he asymmery such as hermal expansion and hermionic emission, i is argued ha his asymmery in he unneling currens is caused by he asymmery in he unneling process. The laer is due o he presence of spin-polarized elecrons a he ungsen film surface induced by he SHE. The accumulaion of spin-polarized elecrons produced by bias currens is furher demonsraed by using an iron-coaed ungsen ip. In his case, we have observed an addiional unneling curren asymmery caused by a change in he direcion of he bias curren flow hrough ungsen films. This asymmery reflecs he change of he orienaion of he elecron spin polarizaion a he ungsen surface as well as he spin dependen densiy of sae of iron-coaed ips. Thus, he obained resuls clearly demonsrae he presence of bias-curren-induced spin-polarized elecrons a he ungsen 2

3 film surface, which is he unique manifesaion of he SHE. II. EXPERIMENTAL DETAILS A. Tungsen film preparaion and characerizaion We used a wo-chamber Omicron ulra-high vacuum (UHV) sysem o fabricae and analyze ungsen films in-siu. The ungsen films were deposied on 12 mm 4 mm.4 mm sapphire subsraes by using a DC magneron spuering echnique a a base pressure below Torr. Gold pads (4 mm 4 mm 1 µm) were pre-paerned hrough a shadow mask ono each end of he subsraes o ensure good elecrical conac before he ungsen films were deposied. During he ungsen deposiion process, he argon spuering pressure and he spuering power were mainained a 3. mtorr and 6 W, respecively. These parameers were chosen in accordance wih prior repors 8,1 o achieve he β-phase of ungsen films which exhibis a pronounced SHE. The lengh (i.e. disance beween he gold pads) and he widh of he ungsen films were 4 mm each (see Fig. 1). We sudied he SHE in four ungsen film samples (see Table I). The hickness of each ungsen film was conrolled by he deposiion ime a a pre-calibraed deposiion rae of.95 nm/min. The ungsen films were hen ransferred o he STM chamber for opographic characerizaion and for he subsequen STM sudy of he SHE. STM images of he fabricaed ungsen films can be found in he Supplemenal Maerial Fig. S1 11. The film resisiviies were measured o be 25 ± 3 µω cm. These resisiviies agree well wih hose repored for -phase ungsen films in he lieraure 8,1. We used elecrochemically-eched ungsen ips which were e-beam heaed under UHV condiions o remove he naive oxides before loading hem ino he STM sage. Iron-coaed ungsen ips (wih iron layer hickness of 18 nm) were produced using an e-beam deposiion echnique in UHV afer he oxide removal. During all unneling measuremens he sysem pressure was kep below Torr. TABLE I. The hickness of fabricaed ungsen films. Sample F1 F2 F3 F4 Thickness (nm)

4 FIG. 1. Schemaic of fabricaed ungsen sample and he elecrical connecions of he experimenal seup. B. Experimenal seup for local sensing of he SHE To perform he local sudy of he SHE, we modified he Omicron STM sysem in order o mainain a consan unneling volage in he presence of a bias curren flow hrough he ungsen film as shown in Fig. 1. The ungsen film sample is conneced o a curren source and a volage source a is lef and righ elecrical conacs, respecively. The conrollable curren source provides he desired bias curren hrough he sample while he volage source is used o apply a desired unneling volage V g beween he STM ip and he sample. The bias curren creaes a volage drop along he resisive ungsen film which affecs he unneling volage. To resolve his issue, we developed a poeniomery echnique o properly compensae he bias-curren-induced volage V (x, y) beween he unneling locaion and he 4

5 righ erminal of he sample 12. This echnique can be briefly described as follows. The biascurren-induced surface poenial V (x, y) is deermined by applying Kirchhoffs volage law (KVL) o he loop formed by he ground, volage source, par of he conducing sample, unneling gap, ip, pre-amplifier and ground (his loop is indicaed by he blue dashed line in he Supplemenary Maerial Fig. S2a 11 ). Since he STM ip is virually grounded by he pre-amplifier, he KVL equaion for he above loop can be wrien as follows V s + V (x, y) = V g + I R ip, (1) where V s is he source volage, V g is he unneling volage, I is he unneling curren, while R ip is he STM ip resisance. I is apparen ha zero unneling curren corresponds o zero unneling volage. Therefore, he righ-hand side of Eq. 1 is equal o zero when I =. In his case, he surface poenial V (x, y) = V s (), where V s () is he volage value a which I =. Thus, his value can be found by locaing he inersecion of he I V s curve wih he I = line. Typical I V s curves and he corresponding values of V (x, y) obained a = ma,.2 ma and -.1 ma are shown in Supplemenal Maerial Fig. S2b. In he STM sudy of he SHE, i is very imporan o mainain a desired unneling volage beween he ip and he conducing film in he presence of curren flow hrough he film. This can be achieved by neglecing he very small erm I R ip ( nv) in Eq. 1 and by seing he source volage V s = V g V (x, y). By using his echnique, he unneling volage can be direcly conrolled by he volage source for any value of he bias curren hrough he film. Namely, one can apply a desired volage across he unneling gap a any posiion of he ip wih respec o he film and for any value and direcion of he bias curren. III. RESULTS Figure 2a presens a ypical measuremen of he unneling curren as a funcion of he unneling volage beween film F1 and a ungsen ip in he absence of a bias curren flow hrough he film. During he measuremen, he feedback conrol of he STM was kep off. The red and black symbols represen he magniude of he unneling curren measured a posiive and negaive polariies of he unneling volage, respecively, and he lower graph reveals heir difference. I can be concluded from his figure ha he magniude of he unneling curren is nearly (even) symmeric wih respec o a change in he polariy of he 5

6 (a) Absolue of I (na) Diff. (na) Posiive polariy of V g Negive polariy of V g Absolue of V g (V) (b) V g (V) I (na) (ma) Tunneling volage Bias curren pulses Tunneling curren Time (ms) FIG. 2. (a) Magniude of unneling curren vs. magniude of unneling volage wih no bias curren applied. The lower graph shows he difference in he magniude of unneling currens measured a opposie polariies of he unneling volage. (b) Time variaions of unneling volage, bias curren and unneling curren in STM based SHE measuremens wih he STM feedback conrol urned off. I is apparen ha here is an asymmery in he unneling curren during he bias curren pulses wih respec o he change in polariy of he unneling volage (see red and blue shaded areas). unneling volage, which is o be expeced for a ungsen-ungsen unneling juncion. Then an exensive sudy of unneling currens in he presence of bias currens hrough film F1 a differen polariies of unneling volages were conduced while sill using a ungsen ip. The bias-curren-induced volage drop in he ungsen film was compensaed by using he above described poeniomery mehod o mainain a desired volage across he unneling gap while changing he bias curren hrough he film. Figure 2b shows ime evoluions of he unneling volage, he bias curren, and he unneling curren obained from one SHE measuremen on sample F1. In he SHE experimen, in order o esablish a desired 6

7 unneling gap, a measuremen sars by sabilizing he ip a a given unneling curren and unneling volage polariy. Then, he ime evoluion of he unneling curren is measured while applying a curren pulse hrough he film. Here, bias curren pulses of 1 ms in duraion were used o minimize Joule heaing effecs which are discussed below. The choice of his pulse duraion was due o bandwidh limiaions of he STM elecronics. Afer some ime inerval, he unneling volage polariy is changed and he ime evoluion of he unneling curren is measured again wih an idenical curren pulse hrough he film. During he enire measuremen, he feedback of he STM piezo was urned off. In he measuremen demonsraed in Fig. 2b, he unneling volage was swiched beween -.5 V and.5 V and he ampliude of he bias curren pulses were kep a 7 ma. The volage polariy and he corresponding elecron unneling direcion are indicaed in he inse of Fig. 2b. I is eviden from Fig. 2b ha he measured unneling curren exhibis spikes a he edges of he bias curren pulses. These spikes can be aribued o displacemen currens caused by fas ransien variaion in he unneling volage across he capaciive ip-sample juncion a pulse edges. The widhs and ampliudes of he spikes can be conrolled by he ramping rae of he curren pulses (see Supplemenal Maerial Fig. S3 11 ). During he bias curren pulse, wo effecs were observed: a monoonic increase of he unneling curren in ime, and an appreciable asymmery in he unneling curren wih respec o he change in unneling volage polariy. The emporal increase in he unneling curren can be aribued o a reducion of he ip-sample disance caused by hermal expansion of he sample during he bias curren pulse. In fac, his reducion was confirmed by an aomic force microscopy sudy performed on he ungsen film under he same condiions (see Supplemenal Maerial Fig. S4 for more explanaion 11 ). The unneling curren asymmery is remarkable because i conrass wih he pracically symmeric naure of he unneling curren in he absence of he bias curren flow hrough he film (see Fig. 2a). To more clearly illusrae he asymmery due o he unneling volage polariy change, he normalized difference beween he unneling currens a corresponding insances of ime wih respec o rising edges of he bias curren pulses (7 ma, 5 ma, and ma) are ploed in Fig. 3a. The normalizaion was performed by dividing he differences in he unneling currens by heir mean values. As a resul of his normalizaion, he effecs of he emporal increases in he unnel curren due o he ip-sample disance changes are eliminaed. Remarkably, he normalized asymmery values remain pracically consan hroughou he 7

8 (a) Asymmery (%) = 7 ma = 5 ma = ma (-.5 V) (.5 V) I - I (-.5 V) (.5 V).5*( I + I ) x1% (b) Asymmery (%) (-.5 V) <I (-.5 V) (.5 V) > - <I (.5 V).5*(<I > + <I > x1% > Time (ms) (ma) (c) 15 Asymmery (%) V g (mv) FIG. 3. (a) Asymmery of unneling currens measured a.5 V and -.5 V unneling volages in he presence of bias curren pulses wih respec o ime. The asymmery is calculaed by he equaion shown in he figure, where I (.5V ) and I (.5V ) are he magniudes of unneling currens measured a unneling volages of -.5 V and.5 V, respecively. (b) and (c) Measured unneling curren asymmery (ime-averaged over he bias curren pulse period) as a funcion of he magniude of bias curren and unneling volage, respecively. Error bars represen deviaions observed for muliple measuremens under he same condiions. duraion of he bias curren pulse. In he absence of a bias curren (see blue riangles in Fig. 3a), he normalized asymmery was near zero, which agrees wih Fig. 2a. In conras, in he case of 5 ma and 7 ma bias curren pulses, subsanial asymmeries in he unneling currens for opposie polariies of he unneling volage were observed (see red circles and black squares in Fig. 3a). Muliple measuremens a various values of bias curren for film 8

9 F1 were performed o reveal he dependence of he unneling curren asymmery on he bias curren ampliude. As shown in Fig. 3b, he asymmery increases wih he bias curren from 4 ma o 7 ma. Several possible sources of he unneling curren asymmery were considered, including hermal expansion of he sample, hermionic emission from he film, as well as he accumulaion of spin-polarized elecrons a he film surface due o he SHE. We deermined ha hermal expansion canno resul in he observed unneling curren asymmery because he curren pulses are idenical for he wo unneling volage polariies, herefore he hermal effec would be idenical. Addiionally, he asymmery remained when he sequence of he unneling volage polariy was changed (see Supplemenal Maerial Fig. S5a 11 ). This implies ha any possible asymmery due o a change in he unneling gap resuling from a residual hermal expansion is precluded. As far as he hermionic emission is concerned, calculaions show ha he emission curren from he ungsen film is negligible ( 1 17 A/cm 2 ). 13 By precluding oher possibiliies, i can be hen reasoned ha he measured unneling curren asymmery is caused by he accumulaion of spin-polarized elecrons (due o he SHE). The laer alers he elecron unneling process wih respec o he polariy change of he unneling volage. Indeed, here is asymmery in he unneling process. Tunneling from he ungsen ip o he ungsen film involves non-spin polarized elecrons, while changing he unneling volage polariy, unneling of spin-polarized elecrons from he ungsen film o he ungsen ip is realized. I is worhwhile o noe ha spin-dependen unneling hrough poenial barriers in semiconducors were heoreically sudied in he lieraure 14 16, where i was demonsraed ha he spin polarizaion of elecrons may appreciably affec he unneling process hrough he barrier due o he spin-orbi coupling (SOC). The SHE as a cause of he asymmery is consisen wih is increase wih he increase in he bias curren as shown in Fig. 3b. This is because he accumulaion of spin-polarized elecrons is proporional o he oal number of injeced elecrons 4. I was also observed ha he asymmery may change is magniude a differen locaions (see Supplemenal Maerial Fig. S5b 11 ). Rarely, a some locaions, he asymmery was reduced o zero and even changed is sign. However, a hese locaions no relaionship beween he negaive asymmery and he magniude of he bias curren was observed. The variaions in he asymmery may be aribued o highly non-uniform (on he nanoscale) disribuion of he bias curren densiy due o he nanoscale granular surface srucure of fabricaed ungsen films. We also sudied 9

10 Asymmery (%) 6 F2 5nm F3 7 nm F4 4 nm Au conac of F (ma) FIG. 4. Tunneling curren asymmery as a funcion of he bias curren for ungsen films F2, F3, and F4, respecively, as well as he asymmery measured a he gold conac of F2. he unneling curren asymmery as a funcion of he unneling volage magniude. The resuls, as presened in Fig. 3c, reveal a nearly consan asymmery for a unneling volage variaion beween 15 mv and 5 mv. For comparison purposes, he asymmery measuremens were repeaed on hree oher ungsen film samples, as well as on he gold conacs of sample F2. The resuls of hese measuremens are presened in Fig. 4. I is clear from his figure ha for he same bias currens he unneling curren asymmery decreases as he film hickness increases. This can be explained by he reducion of he applied elecric field in hicker ungsen films, which resuls in he reducion of he SOC 17 in films and consequenly he SOC induced SHE 18. A similar argumen is applicable o he gold conac area which has a much higher conduciviy and hickness han he ungsen films and hus exhibis a significanly reduced elecric field. The measuremen on he gold conac of he sample F2 works as a good conrol experimen, and he disappearance of he asymmery in he gold area precludes any possible experimenal flaws as causes of he measured asymmery a he ungsen area of he same sample F2. 1

11 (a) 2 Iron coaed ungsen ip on sample F2 (b).4 = -7 ma = 7 ma.2 Asymmery (%) I - I -.5*( I + I - ) x1% Absolue of (ma) I (na) Diff. (na) I (7 ma) - I (-7 ma) V g (V) (c) 2.5 = 7 ma = -7 ma 2. di/dv (a.u.) Diff. (a.u.).5. di/dv(7 ma) - di/dv(-7 ma) V g (V) FIG. 5. (a) Tunneling curren asymmery wih respec o differen direcions of he bias curren measured wih an iron-coaed ip on ungsen film F2 as a funcion of he bias curren magniude. The asymmery was calculaed by using he equaion shown in he figure, where I (Ibias) and I ( Ibias) are he magniudes of unneling currens measured a posiive and negaive direcions of he bias curren, respecively. The applied unneling volage is -.5 V in hese measuremens. (b) and (c) I V g and di/dv curves measured wih he iron-coaed ip for differen direcions of a 7 ma bias curren, respecively. By furher measuremens wih iron-coaed ips, we confirmed he presence of spinpolarized elecrons on he surface of he curren-carrying ungsen film, as would be expeced due o he SHE. A change in he bias curren direcion resuls in a change in he direcion of elecron spin-polarizaion induced by he SHE a he ungsen film surface. In he experimens wih ungsen ips, no asymmery in he unneling curren wih respec o 11

12 a change in he direcion of he bias curren flow hrough he ungsen film was observed (see Supplemenal Maerial Fig. S6 11 ). This is consisen wih he fac ha ungsen ips do no possess a spin-dependen densiy of saes (DOS). To sense he effec caused by a change in he direcion of he bias curren, iron-coaed (spin-polarized) STM ips were used. These ips were prepared by deposiing a hin layer of iron ( 18 nm) ono ungsen ips in-siu. Remarkably, he STM experimens wih spin-polarized ips reveal ha, when elecrons unnel from he film o he ip, here occurs a clear and pronounced asymmery in unneling currens caused by he reversal of he bias curren direcion hrough he film. This is illusraed in Fig. 5a which also shows his asymmery as a funcion of bias curren magniude. The observed asymmery is based on he spin-dependen DOS of he iron-coaed ungsen ip. To reveal he spin-dependen DOS of he iron-coaed ungsen ip, STM based di/dv -measuremens were carried ou by using a lock-in amplifier o experimenally differeniae he simulaneously measured I V signal. The use of bias curren pulses was found o be derimenal o I V and di/dv -measuremens due o he displacemen currens and he change in he ip-sample separaion. To circumven his problem, we performed he measuremens afer hermal equilibrium was reached. This was achieved by subjecing he ungsen film o a desired bias curren flow for 6 8 hours. The resuls are presened in Fig. 5b and 5c. I is clear from hese figures ha for a negaive unneling volage when elecrons unnel from film o ip, here are asymmeries in he I V and di/dv signals upon changing he bias curren direcion. The asymmery in I V curves shows ha he magniude of he unneling curren is larger wih a posiive bias curren, which agrees wih he pulsed bias curren measuremen shown in Fig. 5a. The asymmery in di/dv signals reveals he spin-dependen DOS of he iron-coaed ip. Again, hese resuls demonsrae ha he unneling curren asymmery wih respec o opposie direcions of he bias curren can be aribued o a change in he direcion of he SHE-induced spin-polarizaion deeced by using a spin selecive ip. The Fig. 5b also reveals he unneling volage polariy dependen asymmery consisen wih Fig. 4a. IV. CONCLUSION The repored experimenal resuls reveal he abiliy of using STM for local sensing of spin-polarized elecron accumulaion due o he SHE in curren-carrying ungsen samples. 12

13 Two differen ypes of SHE-induced unneling curren asymmeries were observed by using spin-polarized and non-spin polarized ips upon reversing he bias curren direcion and unneling volage polariy, respecively. These wo asymmeries resul from differen physical origins bu boh reveal he presence of spin-polarized elecrons a he ungsen surface. I is demonsraed ha due o he ulra-high sensiiviy of he STM o changes in unneling condiions, he SHE can be sensed by using much smaller bias curren densiies han hose used wih oher analysis mehods 8. ingxie@erpmail.umd.edu 1 J. Sinova and T. Jungwirh, Physics Today 7, 38 (217), hp://dx.doi.org/1.163/pt M. Dyakonov and V. Perel, Physics Leers A 35, 459 (1971), hp:// 3 J. E. Hirsch, Phys. Rev. Le. 83, 1834 (1999), hps://link.aps.org/doi/1.113/physrevle A. Hoffmann, IEEE Transacions on Magneics 49, 5172 (213), hp://ieeexplore.ieee.org/absrac/documen/65164/. 5 Y. K. Kao, R. C. Myers, A. C. Gossard, and D. D. Awschalom, Science 36, 191 (24), hp://science.sciencemag.org/conen/36/573/191.full.pdf. 6 O. M. J. van Erve, A. T. Hanbicki, K. M. McCreary, C. H. Li, and B. T. Jonker, Applied Physics Leers 14, (214), hp://dx.doi.org/1.163/ L. Liu, C.-F. Pai, Y. Li, H. W. Tseng, D. C. Ralph, and R. A. Buhrman, Science 336, 555 (212), hp://science.sciencemag.org/conen/336/681/555.full.pdf. 8 C.-F. Pai, L. Liu, Y. Li, H. W. Tseng, D. C. Ralph, and R. A. Buhrman, Applied Physics Leers 11, (212), hp://dx.doi.org/1.163/ K.-U. Demasius, T. Phung, W. Zhang, B. P. Hughes, S.-H. Yang, A. Kellock, W. Han, A. Pushp, and S. S. Parkin, Naure communicaions 7, 1644 (216), hps:// 1 Q. Hao, W. Chen, and G. Xiao, Applied Physics Leers 16, (215), hp://dx.doi.org/1.163/ See Supplemanal Maerial a [] for deailed informaion. 13

14 12 T. Xie, M. Dreyer, D. Bowen, D. Hinkel, R. Buera, C. Kraff, and I. Mayergoyz, arxiv preprin arxiv: (217), hps://arxiv.org/fp/arxiv/papers/176/ pdf. 13 E. L. Murphy and R. H. Good, Phys. Rev. 12, 1464 (1956), hps://link.aps.org/doi/1.113/physrev V. I. Perel, S. A. Tarasenko, I. N. Yassievich, S. D. Ganichev, V. V. Bel kov, and W. Prel, Phys. Rev. B 67, 2134 (23), hps://link.aps.org/doi/1.113/physrevb S. A. Tarasenko, V. I. Perel, and I. N. Yassievich, Phys. Rev. Le. 93, 5661 (24), hps://link.aps.org/doi/1.113/physrevle L. G. Wang, W. Yang, K. Chang, and K. S. Chan, Phys. Rev. B 72, (25), hps://link.aps.org/doi/1.113/physrevb G. Dresselhaus, Phys. Rev. 1, 58 (1955), hps://link.aps.org/doi/1.113/physrev J. Sinova, S. O. Valenzuela, J. Wunderlich, C. H. Back, and T. Jungwirh, Rev. Mod. Phys. 87, 1213 (215), hps://link.aps.org/doi/1.113/revmodphys

15 Supplemenary Maerial 1: Scanning unneling microscopy (STM) images of he fabricaed ungsen films Represenaive STM images obained on he fabricaed ungsen films wih ungsen ips and iron coaed ungsen ips are presened in Fig. S1a-f. The surface morphologies of sample F1, F2 and F3 are similar. Sample F4 shows a much larger grain size han he oher hree ungsen samples, which is due o is much higher film hickness. Fig. S1f shows he opography of he pre-paerned 1 m hick gold conacs. Hisograms of he grain areas for he samples F1 and F2 are presened in Fig. S1g. The similariy of hese hisograms indicaes good conrol over he film deposiion process. Supplemenary Maerial 2: I V s curves measured from he poeniomery mehod o deermine he bias-curren-induced V (x, y) In order o compensae he bias-curren-induced gap volage offse V (x, y), a scanning unneling microscopy (STM) based poeniomery echnique was developed and implemened as shown in Fig. S2a and he measured I V s curves by using he poeniomery echnique are shown in Fig. S2b. The poeniomery measuremen sared by parking he STM ip a he desired locaion (x, y). Then, he feedback loop of he STM sysem was urned off o freeze he sample and ip a heir curren posiions, i.e. no more mechanical movemens. In he meanime, he unneling curren I was being measured wih respec o he change of he source volage Vs. Noe, in his experimen we used he erminal of he sample which is conneced o he volage source as he reference poin for he surface poenial. Supplemenary Maerial 3: Displacemen curren observed a he edge of a bias curren pulse The shape and ampliude of he spikes in he unneling curren a he edges of he bias curren pulse depend on he edge slope as shown in Fig. S3. This indicaes ha he observed spikes are due o he displacemen currens caused by he edge of he bias curren pulse and he resuling ransien in he unneling volage due o he finie response ime of he volage compensaion circui. Supplemenary Maerial 4: Tip-sample disance change due o he bias curren Figure S4a shows he measured unneling curren in he presence of 1 ms bias curren pulses wih ampliudes from 5 o 1 ma. I is clear from his figure ha he unneling curren increases in ime. Furhermore, his increase is found o be exponenially dependen on he ampliude of he bias curren pulse, as revealed by he inse logarihm plo of he 15

16 unneling curren as a funcion of he bias curren. The observed increase in he unneling curren can be aribued o a reducion in he ip-sample separaion. An aomic force microscopy (AFM) sudy was performed on ungsen film in-siu o confirm he change in he ip-sample disance in he presence of he bias curren pulses. The feedback was urned off during he AFM measuremen as in he STM experimens. The resuls are presened in Fig. S4b. In his figure, he measured resonance frequency of he AFM canilever shows a clear downward shif (negaive df) in he presence of he bias curren pulse. Since he AFM ip was sabilized on he aracive par of he force-disance curve, his shif reflecs an increase in he aracive force gradien acing on he ip, which is evidence for he ipsample disance reducion in he presence of bias curren. Supplemenary Maerial 5: Asymmery as a funcion of bias curren measured wih a ungsen ip Figure S5a shows he measured asymmery as a funcion of bias curren wih reversed sequences of he unneling volage polariy measured on sample F1 wih a ungsen ip. For he sequence 1, he applied unneling volage was firs negaive and hen swiched o posiive as also shown in Fig. 2b. The sequence of he unneling volage polariy was reversed in sequence 2, i.e. posiive polariy for he firs bias curren pulse and negaive polariy for he second pulse. The observed asymmery as a funcion of he bias curren is pracically he same for eiher sequence. This resul implies ha any possible change in he unneling gap due o a residual hermal expansion of he sample can be precluded as a cause of he observed unneling curren asymmery. Figure S5b shows asymmeries measured a differen locaions on he sample F1. The locaions exhibi a similar sauraion paern a a bias curren around 7 ma. The variaion in he asymmery may be aribued o he non-uniformiy in he local expression of he SHE due o he local surface srucure of he fabricaed ungsen film. Supplemenary Maerial 6: Tunneling curren measured wih respec o a change in he direcion of he bias curren using a ungsen ip The unneling curren shows no noiceable difference wih respec o a change in he direcion of he bias curren when measured wih a ungsen ip. 16

17 (g) 1 Sample F1 Sample F2 8 Coun Area (nm 2 ) Figure S1. STM images obained wih ungsen ips on (a) sample F1, (b) sample F2, (d) Sample F3, (e) Sample F4, and (f) gold conac of sample F2. (c) STM image of sample F2 obained wih an iron coaed ungsen ip. (g) Grain area hisograms of STM images (a) and (b). 17

18 I (na) (b) = ma =.2 ma = -.1 ma V () s = -5 mv V () s = 25 mv V s (mv) Figure S2. (a) Schemaic diagram for he experimenal seup wih he indicaed Kirchhoffs volage law (KVL) loop for poeniomery measuremens. (b) Typical I V s curves and he corresponding values of V (x, y) obained a various. (ma) Pulse edge ime 75 us 15 us 3 us 6 us 6 4 I (na) Time (ms) Figure S3. Tunneling curren measured in he presence of 7 ma bias curren pulses wih varying pulse edge imes. 18

19 I (na) (a) Log(I ) (na) 1 1 Time insance.1 ms.28 ms.46 ms.64 ms.82 ms (ma) 1 ma 9 ma 8 ma 7 ma 6 ma 5 ma Time (ms) (b) df (Hz) Bias curren pulse Time (ms) 1 ma 9 ma 8 ma 7 ma 6 ma 5 ma Figure S4. (a) Tunneling currens in he presence of varying magniudes of bias currens. The inse shows he unneling curren as a funcion of he bias curren measured a various ime insances. (b) Aomic force microscopy measuremens on he ungsen film in he presence of varying bias curren pulses. (a) Asymmery (%) Sample F1 -V g -> +V g +V g -> -V g (ma) (b) Asymmery (%) Sample F1 Locaion 1 Locaion 2 Locaion 3 <I(-.5 V)> - <I(.5V)>.5*(<I(-.5 V)> + <I(.5V)>) x1% (ma) Figure S5. (a) Asymmery in unneling currens as a funcion of bias curren measured by opposie sequences of he polariy of he applied unneling volage. (b) Asymmery as a funcion of bias curren measured a hree differen locaions on sample F1 by using a ungsen ip. 19

20 Asymmery (%) 1-1 Tungsen ip = 7 ma = -7 ma I (na) (ma) Time (ms) Figure S6. Tunneling currens as a funcion of ime wih respec o differen direcions of a 7 ma bias curren measured by using a ungsen STM ip. Inse: he normalized unneling curren asymmery wih respec o differen direcions of he bias curren measured in he ungsen ip-ungsen film sysem as a funcion of he bias curren magniude. 2