MC74HC4046B. Phase-Locked Loop. High Performance Silicon Gate CMOS
|
|
- Melvyn McKinney
- 5 years ago
- Views:
Transcription
1 MC74HC446B Phase-Locked Loop High Performance Silicon Gate CMOS The MC74HC446B is similar in function to the MC446 Metal gate CMOS device. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The HC446B phase locked loop contai three phase comparators, a voltage controlled oscillator (CO) and unity gain op amp DEM OUT. The comparators have two common signal inputs,, and. Input and can be used directly coupled to large voltage signals, or indirectly coupled (with a series capacitor to small voltage signals). The self bias circuit adjusts small voltage signals in the linear region of the amplifier. Phase comparator (an exclusive OR gate) provides a digital error signal PC OUT and maintai 9 degrees phase shift at the center frequency between and signals (both at % duty cycle). Phase comparator 2 (with leading edge seing logic) provides digital error signals PC2 OUT and PCP OUT and maintai a degree phase shift between and signals (duty cycle is immaterial). The linear CO produces an output signal CO OUT whose frequency is determined by the voltage of input CO IN signal and the capacitor and resistors connected to pi CA, CB, R and R2. The unity gain op amp output DEM OUT with an external resistor is used where the CO IN signal is needed but no loading can be tolerated. The inhibit input, when high, disables the CO and all op amps to minimize standby power coumption. Applicatio include FM and FSK modulation and demodulation, frequency synthesis and multiplication, frequency discrimination, tone decoding, data synchronization and conditioning, voltage to frequency conversion and motor speed control. Features Output Drive Capability: LSTTL Loads Low Power Coumption Characteristic of CMOS Devices Operating Speeds Similar to LSTTL Wide Operating oltage Range for CO: to Low Input Current:. A Maximum (except and ) In Compliance with the Requirements Defined by JEDEC Standard No. 7 A Low Quiescent Current: 8 A Maximum (CO disabled) High Noise Immunity Characteristic of CMOS Devices Diode Protection on All Inputs Chip Complexity: 279 FETs or 7 Equivalent Gates NL Prefix for Automotive and Other Applicatio Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable These Devices are Pb Free, Halogen Free and are RoHS Compliant SOIC 6 D SUFFIX CASE 7B PCP out PC out COMP in CO out PIN ASSIGNMENT INH CA CB TSSOP 6 DT SUFFIX CASE 948F MARKING DIAGRAMS HC446BG AWLYWW SOIC 6 6 HC4 46B ALYW TSSOP 6 A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G or = Pb Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page of this data sheet PC3 out SIG in PC2 out R2 R DEM out CO in Semiconductor Components Industries, LLC, 28 May, 28 Rev. Publication Order Number: MC74HC446B/D
2 MC74HC446B Pin No. Symbol Name and Function PCP OUT PC OUT CO OUT INH CA CB CO IN DEM OUT R R2 PC2 OUT PC3 OUT Phase Comparator Pulse Output Phase Comparator Output Comparator Input CO Output Inhibit Input Capacitor C Connection A Capacitor C Connection B Ground ( ) SS CO Input Demodulator Output Resistor R Connection Resistor R2 Connection Phase Comparator 2 Output Signal Input Phase Comparator 3 Output Positive Supply oltage MAXIMUM RATINGS Symbol Parameter alue Unit DC Supply oltage (Referenced to ). to +7. in DC Input oltage (Referenced to ). to +. out DC Output oltage (Referenced to ). to +. I in DC Input Current, per Pin ±2 ma I out DC Output Current, per Pin ±2 ma I CC DC Supply Current, and Pi ± ma P D Power Dissipation in Still Air SOIC Package mw T stg Storage Temperature 6 to + C T L Lead Temperature, mm from Case for Seconds SOIC Package 26 C This device contai protection circuitry to guard agait damage due to high static voltages or electric fields. However, precautio must be taken to avoid applicatio of any voltage higher than maximum rated voltages to this high impedance circuit. For proper operation, in and out should be cotrained to the range ( in or out ). Unused inputs must always be tied to an appropriate logic voltage level (e.g., either or ). Unused outputs must be left open. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating: SOIC Package: 7 mw/ C from 6 to 2 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit DC Supply oltage (Referenced to ) DC Supply oltage (Referenced to ) NON CO 2. in, out DC Input oltage, Output oltage (Referenced to ) T A Operating Temperature, All Package Types +2 C t r, t f Input Rise and Fall Time = 2. (Pin ) = = Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 4 2
3 MC74HC446B [Phase Comparator Section] DC ELECTRICAL CHARACTERISTICS (oltages Referenced to ) Symbol Parameter Test Conditio Guaranteed Limit to 2 C 8 C 2 C Unit IH Minimum High Level Input oltage DC Coupled, out = or I out 2 A IL Maximum Low Level Input oltage DC Coupled, out = or I out 2 A OH Minimum High Level Output oltage PCP OUT, PCn OUT in = IH or IL I out 2 A in = IH or IL I out 4. ma I out.2 ma OL Maximum Low Level Output oltage Qa Qh PCP OUT, PCn OUT out = or I out 2 A 2. I in I OZ I CC in = IH or IL I out 4. ma I out.2 ma Maximum Input Leakage Current, in = or 2. Maximum Three State Leakage Current PC2 OUT Maximum Quiescent Supply Current (per Package) (CO disabled) Pi 3, and 4 at Pin 9 at ; Input Leakage at Pi 3 and 4 to be excluded Output in High Impedance State in = IH or IL out = or in = or I out = A.26.3 ± ±8. ±24 ± ±4. ±9. ±24 ±8.4.4 ±. ±. ±27. ±8 A ±. ±. ± A A [Phase Comparator Section] AC ELECTRICAL CHARACTERISTICS (C L = pf, Input t r = t f = ) Symbol Parameter Guaranteed Limit to 2 C 8 C 2 C Unit t PLH, t PHL Maximum Propagation Delay, / to PC OUT (Figure ) t PLH, t PHL Maximum Propagation Delay, / to PCP OUT (Figure ) t PLH, t PHL Maximum Propagation Delay, / to PC3 OUT (Figure ) t PLZ, t PHZ Maximum Propagation Delay, / Output Disable Time to PC2 OUT (Figures 2 and 3) t PZH, t PZL Maximum Propagation Delay, / Output Enable Time to PC2 OUT (Figures 2 and 3) t TLH, t THL Maximum Output Traition Time (Figure )
4 MC74HC446B [CO Section] DC ELECTRICAL CHARACTERISTICS (oltages Referenced to ) Symbol Parameter Test Conditio IH Minimum High Level Input oltage INH out = or I out 2 A Guaranteed Limit to 2 C 8 C 2 C Unit IL Maximum Low Level Input oltage INH out = or I out 2 A OH Minimum High Level Output oltage CO OUT in = IH or IL I out 2 A in = IH or IL I out 4. ma I out.2 ma OL Maximum Low Level Output oltage CO OUT out = or I out 2 A I in CO IN in = IH or IL I out 4. ma I out.2 ma Maximum Input Leakage in = or.. A Current INH, CO IN Operating oltage Range at CO IN over the range specified for R; For linearity see Fig. 3A, Parallel value of R and R2 should be > 2.7 k INH = IL R Resistor Range R2 C Capacitor Range Min Max Min Max Min Max No Limit k pf [CO Section] AC ELECTRICAL CHARACTERISTICS (C L = pf, Input t r = t f = ) Symbol f/t fo Parameter Frequency Stability with Temperature Changes (Figures A, B, C) CO Center Frequency (Duty Factor = %, R = 3 k, C = 39 pf, R2 = infinity) (See Figures 2A, B, C, D for other conditio) fco CO Frequency Linearity CO Duty Factor at CO OUT Guaranteed Limit to 2 C 8 C 2 C Min Max Min Max Min Max 3 3 Unit %/K MHz See Figures 3A, B % Typical % % 4
5 MC74HC446B [Demodulator Section] DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditio RS Resistor Range At RS > k the Leakage Current can Influence DEM OUT OFF RD Offset oltage i = CO IN = /2 ; CO IN to DEM OUT alues taken over RS Range. Dynamic Output DEM OUT = /2 Resistance at DEM OUT Guaranteed Limit to 2 C 8 C 2 C Min Max Min Max Min Max See Figure Typical 2 Unit k m SWITCHING WAEFORMS, INPUTS % INPUT % PCP OUT, PC OUT PC3 OUT OUTPUTS t THL t PHL 9% % % t PLH t TLH INPUT PC2 OUT OUTPUT t PZH % % t PHZ 9% OH HIGH IMPEDANCE Figure. Figure 2. INPUT INPUT PC2 OUT OUTPUT % t PZL % % t PLZ % HIGH IMPEDANCE OL DEICE UNDER TEST OUTPUT TEST POINT C L * *INCLUDES ALL PROBE AND JIG CAPACITANCE Figure 3. Figure 4. Test Circuit
6 MC74HC446B DETAILED CIRCUIT DESCRIPTION oltage Controlled Oscillator/Demodulator Output The CO requires two or three external components to operate. These are R, R2, C. Resistor R and Capacitor C are selected to determine the center frequency of the CO (see typical performance curves Figure 2). R2 can be used to set the offset frequency with volts at CO input. For example, if R2 is decreased, the offset frequency is increased. If R2 is omitted the CO range is from Hz. By increasing the value of R2 the lock range of the PLL is increased and the gain (volts/hz) is decreased. Thus, for a narrow lock range, large swings on the CO input will cause less frequency variation. Internally, the resistors set a current in a current mirror, as shown in Figure. The mirrored current drives one side of the capacitor. Once the voltage across the capacitor charges up to ref of the comparators, the oscillator logic flips the capacitor which causes the mirror to charge the opposite side of the capacitor. The output from the internal logic is then taken to CO output (Pin 4). The input to the CO is a very high impedance CMOS input and thus will not load down the loop filter, easing the filter design. In order to make signals at the CO input accessible without degrading the loop performance, the CO input voltage is buffered through a unity gain Op amp to Demod Output. This Op amp can drive loads of K ohms or more and provides no loading effects to the CO input voltage (see Figure ). An inhibit input is provided to allow disabling of the CO and all Op amps (see Figure ). This is useful if the internal CO is not being used. A logic high on inhibit disables the CO and all Op amps, minimizing standby power coumption. 2 REF + _ I R 2 CURRENT MIRROR I + I 2 = I 3 CO IN 9 + _ I 2 4 CO OUT R I 3 DEMOD OUT + _ C (EXTERNAL) 6 7 ref + + INH Figure. Logic Diagram for CO 6
7 MC74HC446B The output of the CO is a standard high speed CMOS output with an equivalent LS TTL fan out of. The CO output is approximately a square wave. This output can either directly feed the of the phase comparators or feed external prescalers (counters) to enable frequency synthesis. Phase Comparators All three phase comparators have two inputs, and. The and have a special DC bias network that enables AC coupling of input signals. If the signals are not AC coupled, standard 74HC input levels are required. Both input structures are shown in Figure 6. The outputs of these comparators are essentially standard 74HC outputs (comparator 2 is TRI STATEABLE). In normal operation and ground voltage levels are fed to the loop filter. This differs from some phase detectors which supply a current to the loop filter and should be coidered in the design. (The MC446 also provides a voltage). 4 PC2 OUT 3 3 PCP OUT PC3 OUT PC OUT 2 Figure 6. Logic Diagram for Phase Comparators Phase Comparator This comparator is a simple XOR gate similar to the 74HC86. Its operation is similar to an overdriven balanced modulator. To maximize lock range the input frequencies must have a % duty cycle. Typical input and output waveforms are shown in Figure 7. The output of the phase detector feeds the loop filter which averages the output voltage. The frequency range upon which the PLL will lock onto if initially out of lock is defined as the capture range. The capture range for phase detector is dependent on the loop filter design. The capture range can be as large as the lock range, which is equal to the CO frequency range. To see how the detector operates, refer to Figure 7. When two square wave signals are applied to this comparator, an output waveform (whose duty cycle is dependent on the phase difference between the two signals) results. As the phase difference increases, the output duty cycle increases and the voltage after the loop filter increases. In order to achieve lock when the PLL input frequency increases, the CO input voltage must increase and the phase difference between and will increase. At an input frequency equal to f min, the CO input is at. This requires the phase detector output to be grounded; hence, the two input signals must be in phase. When the input frequency is f max, the CO input must be and the phase detector inputs must be 8 degrees out of phase. PC OUT CO IN Figure 7. Typical Waveforms for PLL Using Phase Comparator The XOR is more susceptible to locking onto harmonics of the than the digital phase detector 2. For itance, 7
8 MC74HC446B a signal 2 times the CO frequency results in the same output duty cycle as a signal equal to the CO frequency. The difference is that the output frequency of the 2f example is twice that of the other example. The loop filter and CO range should be designed to prevent locking on to harmonics. Phase Comparator 2 This detector is a digital memory network. It coists of four flip flops and some gating logic, a three state output and a phase pulse output as shown in Figure 6. This comparator acts only on the positive edges of the input signals and is independent of duty cycle. Phase comparator 2 operates in such a way as to force the PLL into lock with phase difference between the CO output and the signal input positive waveform edges. Figure 8 shows some typical loop waveforms. First assume that is leading the. This mea that the CO s frequency must be increased to bring its leading edge into proper phase alignment. Thus the phase detector 2 output is set high. This will cause the loop filter to charge up the CO input, increasing the CO frequency. Once the leading edge of the is detected, the output goes TRI STATE holding the CO input at the loop filter voltage. If the CO still lags the then the phase detector will again charge up the CO input for the time between the leading edges of both waveforms. If the CO leads the then when the leading edge of the CO is seen; the output of the phase comparator goes low. This discharges the loop filter until the leading edge of the is detected at which time the output disables itself again. This has the effect of slowing down the CO to again make the rising edges of both waveforms coincidental. When the PLL is out of lock, the CO will be running either slower or faster than the. If it is running slower the phase detector will see more rising edges and so the output of the phase comparator will be high a majority of the time, raising the CO s frequency. Conversely, if the CO is running faster than the, the output of the detector will be low most of the time and the CO s output frequency will be decreased. As one can see, when the PLL is locked, the output of phase comparator 2 will be disabled except for minor correctio at the leading edge of the waveforms. When PC 2 is TRI STATED, the PCP output is high. This output can be used to determine when the PLL is in the locked condition. This detector has several interesting characteristics. Over the entire CO frequency range there is no phase difference between the and the. The lock range of the PLL is the same as the capture range. Minimal power was coumed in the loop filter since in lock the detector output is a high impedance. When no is present, the detector will see only CO leading edges, so the comparator output will stay low, forcing the CO to f min. Phase comparator 2 is more susceptible to noise, causing the PLL to unlock. If a noise pulse is seen on the, the comparator treats it as another positive edge of the and will cause the output to go high until the CO leading edge is seen, potentially for an entire period. This would cause the CO to speed up during that time. When using PC, the output of that phase detector would be disturbed for only the short duration of the noise spike and would cause less upset. Phase Comparator 3 This is a positive edge triggered sequential phase detector using an RS flip flop as shown in Figure 6. When the PLL is using this comparator, the loop is controlled by positive signal traitio and the duty factors of and are not important. It has some similar characteristics to the edge seitive comparator. To see how this detector works, assume input pulses are applied to the and s as shown in Figure 9. When the leads the, the flop is set. This will charge the loop filter and cause the CO to speed up, bringing the comparator into phase with the. The phase angle between and varies from to 36 and is 8 at f o. The voltage swing for PC 3 is greater than for PC 2 but coequently has more ripple in the signal to the CO. When no is present the CO will be forced to f max as opposed to f min when PC 2 is used. The operating characteristics of all three phase comparators should be compared to the requirements of the system design and the appropriate one should be used. PC2 OUT CO IN PCP OUT PC3 OUT CO IN HIGH IMPEDANCE OFF-STATE Figure 8. Typical Waveforms for PLL Using Phase Comparator 2 Figure 9. Typical Waveform for PLL Using Phase Comparator 3 CC 8
9 MC74HC446B TYPICAL CHARACTERISTICS Y AXIS LABEL (UNIT) =, R S = k =, R S = k =, R S = k =, R S = k X AXIS LABEL (UNIT) Figure. Offset oltage at Demodulator Output as a Function of CO IN and R S =, R S = k =, R S = k FREQUENCY STABILITY (%) 2 2 =, C = pf; R2 = ; COin = /3 T A, AMBIENT TEMPERATURE ( C) Figure A. Frequency Stability vs. Ambient Temperature: = R = 3 k R = k R = k FREQUENCY STABILITY (%) 2 2 =, C = pf; R2 = ; COin = /2 R = 3 k T A, AMBIENT TEMPERATURE ( C) R = k R = k Figure B. Frequency Stability vs. Ambient Temperature: = FREQUENCY STABILITY (%) 2 2 =, C = pf; R2 = ; COin = /2 T A, AMBIENT TEMPERATURE ( C) Figure C. Frequency Stability vs. Ambient Temperature: = R = 3 k R = k R = k 9
10 MC74HC446B TYPICAL CHARACTERISTICS = 6 = f CO (MHz) = = f CO (khz) = = R = k C = 39 pf R = k C = F COIN () COIN () Figure 2A. CO Frequency (f CO ) as a Function of the CO Input oltage ( COIN ) Figure 2B. CO Frequency (f CO ) as a Function of the CO Input oltage ( COIN ) f CO (MHz) =. = = R = k C = 39 pf f CO (khz) =.. = = R = k C = F COIN () COIN () Figure 2C. CO Frequency (f CO ) as a Function of the CO Input oltage ( COIN ) Figure 2D. CO Frequency (f CO ) as a Function of the CO Input oltage ( COIN ) 8 = C = F R2 = =. =. over the Range: for CO Linearity f = (f + f 2 ) / 2 Linearity = (f f ) / (f ) x % f CO (%) = C = F = C = 39 pf = C = F = C = 39 pf f 2 f f f 2 = C = 39 pf R (k ) MIN /2 cc Figure 3A. Frequency Linearity vs. Figure 3B. Definition of CO Frequency R, C and Linearity MAX
11 MC74HC446B ORDERING INFORMATION MC74HC446BDG Device Package Shipping SOIC 6 (Pb Free) 48 Units / Rail MC74HC446BDR2G NL74HC446ADR2G* MC74HC446BDTG SOIC 6 (Pb Free) SOIC 6 (Pb Free) TSSOP 6 (Pb Free) 2 Units / Reel 2 Units / Reel 96 Units / Rail MC74HC446BDTR2G TSSOP 6 (Pb Free) 2 Units / Reel For information on tape and reel specificatio, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specificatio Brochure, BRD8/D. *NL Prefix for Automotive and Other Applicatio Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable.
12 MC74HC446B (.6) T (.6) T (.4) T SEATING PLANE L U PIN IDENT. U D S S 2X L/2 C 6X K REF A G PACKAGE DIMENSIONS (.4) M T U S S B U TSSOP 6 CASE 948F ISSUE B H J N N J F DETAIL E DETAIL E K K ÇÇÇ ÉÉÉ ÇÇÇ SECTION N N.2 (.) M W NOTES:. DIMENSIONING AND TOLERANCING PER ANSI YM, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED (.6) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED.2 (.) PER SIDE.. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.8 (.3) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE W. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C.2.47 D..2.6 F G.6 BSC.26 BSC H J J K K L 6.4 BSC.22 BSC M 8 8 SOLDERING FOOTPRINT* PITCH 6X.36 6X.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 2
13 MC74HC446B PACKAGE DIMENSIONS A B SOIC 6 CASE 7B ISSUE K P 8 PL.2 (.) M B S NOTES:. DIMENSIONING AND TOLERANCING PER ANSI YM, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION (.6) PER SIDE.. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 27 (.) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F G.27 BSC. BSC J K M 7 7 P R T SEATING PLANE G D 6 PL.2 (.) M T B S A S K C M R X 4 J F SOLDERING FOOTPRINT* 8X 6.4 6X.2 6 6X.8.27 PITCH 8 9 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor ow the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, coequential or incidental damages. Buyer is respoible for its products and applicatio using ON Semiconductor products, including compliance with all laws, regulatio and safety requirements or standards, regardless of any support or applicatio information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any licee under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 92 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@oemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MC74HC446B/D
Phase-Locked Loop High-Performance Silicon-Gate CMOS
TECHNICAL DATA Phase-Locked Loop High-Performance Silicon-Gate CMOS The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs. The IN74HC4046A
More informationMC14532B. 8-Bit Priority Encoder
MC4532B 8-Bit Priority Encoder The MC4532B is cotructed with complementary MOS (CMOS) enhancement mode devices. The primary function of a priority encoder is to provide a binary address for the active
More informationMC74HC4046A. Phase Locked Loop. High Performance Silicon Gate CMOS
Phase Locked Loop High Performance Silicon Gate CMOS The MC74HC446A is similar in function to the MC446 Metal gate CMOS device. The device inputs are compatible with standard CMOS outputs; with pullup
More informationMM74HC04 Hex Inverter
MM74HC04 Hex Inverter Features Typical propagation delay: 8ns Fan out of 10 LS-TTL loads Quiescent power consumption: 10µW maximum at room temperature Low input current: 1µA maximum General Description
More informationMM74HC14 Hex Inverting Schmitt Trigger
MM74HC14 Hex Inverting Schmitt Trigger Features Typical propagation delay: 13ns Wide power supply range: 2V 6V Low quiescent current: 20µA maximum (74HC Series) Low input current: 1µA maximum Fanout of
More information7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.
2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power
More informationMC14514B, MC14515B. 4-Bit Transparent Latch / 4-to-16 Line Decoder
MC14514B, MC145B 4-Bit Traparent Latch / 4-to-16 Line Decoder The MC14514B and MC145B are two output optio of a 4 to 16 line decoder with latched inputs. The MC14514B (output active high option) presents
More informationNCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output
Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output
More informationMUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
MUN224, MMUN224L, MUN524, DTC4YE, DTC4YM, NSBC4YF Digital Transistors (BRT) R = 0 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
More informationMUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3. Digital Transistors (BRT) R1 = 47 k, R2 = 47 k
MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF Digital Transistors (BRT) R = 47 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
More informationMC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B
MC4B Series B Suffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure
More information74VHC4046 CMOS Phase Lock Loop
74VHC4046 CMOS Phase Lock Loop General Description The 74VHC4046 is a low power phase lock loop utilizing advanced silicon-gate CMOS technology to obtain high frequency operation both in the phase comparator
More informationMUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k
MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF Digital Transistors (BRT) R = 4.7 k, R = 4.7 k PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
More informationPCS2I2309NZ. 3.3 V 1:9 Clock Buffer
. V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The
More informationP2I2305NZ. 3.3V 1:5 Clock Buffer
3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
More information74VHC14 Hex Schmitt Inverter
74HC14 Hex Schmitt Inverter Features High Speed: t PD = 5.5 ns (Typ.) at CC = 5 Low Power Dissipation: I CC = 2 μa (Max.) at T A = 25 C High Noise Immunity: NIH = NIL = 28% CC (Min.) Power down protection
More information74HCT157. Quad 2 Input Data Selectors / Multiplexers. High Performance Silicon Gate CMOS
74HCT57 Quad 2 Input Data Selectors / Multiplexers High Performance Silicon Gate CMOS The 74HCT57 is identical in pinout to the S57. The device inputs are compatible with standard CMOS outputs; with pullup
More informationMC3488A. Dual EIA 423/EIA 232D Line Driver
Dual EIA423/EIA232D Line Driver The MC34A dual is singleended line driver has been designed to satisfy the requirements of EIA standards EIA423 and EIA232D, as well as CCITT X.26, X.2 and Federal Standard
More informationMJD31 (NPN), MJD32 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3 (NPN), MJD3 (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
More informationMUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
More informationNC7S14 TinyLogic HS Inverter with Schmitt Trigger Input
NC7S14 TinyLogic HS Inverter with Schmitt Trigger Input General Description The NC7S14 is a single high performance CMOS Inverter with Schmitt Trigger input. The circuit design provides hysteresis between
More informationNC7S00 TinyLogic HS 2-Input NAND Gate
NC7S00 TinyLogic HS 2-Input NAND Gate General Description The NC7S00 is a single 2-Input high performance CMOS NAND Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit
More informationPIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
More informationHigh Performance Silicon Gate CMOS
High Performance Silicon Gate CMOS The MC74CA is identical in pinout to the standard CMOS MC. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with
More informationMUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
More informationBAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
More informationMC14066B. Quad Analog Switch/Quad Multiplexer
Quad Analog Switch/Quad Multiplexer The MC4066B consists of four independent switches capable of controlling either digital or analog signals. This quad bilateral switch is useful in signal gating, chopper,
More informationMC14066B. Quad Analog Switch/Quad Multiplexer
Quad Analog Switch/Quad Multiplexer The MC4066B consists of four independent switches capable of controlling either digital or analog signals. This quad bilateral switch is useful in signal gating, chopper,
More informationNSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNC7SZ175 TinyLogic UHS D-Type Flip-Flop with Asynchronous Clear
NC7SZ175 TinyLogic UHS D-Type Flip-Flop with Asynchronous Clear General Description The NC7SZ175 is a single positive edge-triggered D-type CMOS Flip-Flop with Asynchronous Clear from ON Semiconductor
More informationNTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL
NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
More informationNCP57302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator
NCP5732, NC5732 3. A, ery Low-Dropout (LDO) Fast Transient Response Regulator The NCP5732 is a high precision, very low dropout (LDO), low minimum input voltage and low ground current positive voltage
More informationMJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationLM339, LM239, LM2901, LM2901V, NCV2901, MC3302. Single Supply Quad Comparators
LM339, LM239, LM290, LM290V, NCV290, MC3302 Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer, automotive,
More informationLM339S, LM2901S. Single Supply Quad Comparators
LM339S, LM290S Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer and industrial electronic applications. Features
More informationMC14001B Series. B-Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B
MC4B Series B-Suffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure
More informationMC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B
MC4B Series BSuffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationMC14016B. Quad Analog Switch/ Quad Multiplexer
Quad Analog Switch/ Quad Multiplexer The MC406B quad bilateral switch is constructed with MOS Pchannel and Nchannel enhancement mode devices in a single monolithic structure. Each MC406B consists of four
More information50A, 600V Hyperfast Rectifier
RHRG56F85 5A, 6V Hyperfast Rectifier Features High Speed Switching ( t rr =45(Typ.) @ I F =5A ) Low Forward Voltage( V F =.67V(Typ.) @ I F =5A ) Avalanche Energy Rated AECQ Qualified Applicatio Switching
More informationNTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
More informationNVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
More informationBAV ma 70 V High Conductance Ultra-Fast Switching Diode
BAV99 200 ma 70 V High Conductance Ultra-Fast Switching Diode Features High Conductance: I F = 200 ma Fast Switching Speed: t rr < 6 ns Maximum Small Plastic SOT-2 Package Series-Pair Configuration Applications
More informationNL27WZ07. Dual Buffer with Open Drain Outputs
Dual Buffer with Open Drain Outputs The N27WZ07 is a high performance dual buffer with open drain outputs operating from a.5 to 5.5 V supply. The internal circuit is composed of multiple stages, including
More informationNTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23
NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
More informationNTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
More informationP3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device
3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device Functional Description P3P85R0A is a versatile, 3.3 V, LVCMOS, wide frequency range, TIMING SAFE Peak EMI reduction device. TIMING SAFE
More informationMC74LVXT4066. Quad Analog Switch/ Multiplexer/Demultiplexer. High Performance Silicon Gate CMOS
MC4LVXT466 Quad Analog Switch/ Multiplexer/Demultiplexer High Performance Silicon Gate CMOS The MC4LVXT466 utilizes silicon gate CMOS technology to achieve fast propagation delays, low resistances, and
More informationNTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationBC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon
BC87-6L, SBC87-6L, BC87-25L, SBC87-25L, BC87-4L, SBC87-4L General Purpose Transistors NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change
More informationNTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
More informationNSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNCP59302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series
NCP5932, NCV5932 3. A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series The NCP5932 is a high precision, very low dropout (VLDO), low ground current positive voltage regulator that is capable
More informationMJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
More informationNTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
More informationNB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier
4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference
More informationNVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
More informationNB2879A. Low Power, Reduced EMI Clock Synthesizer
Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic
More informationNTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
More informationMBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
More informationMC10H352. Quad CMOS to PECL* Translator
Quad CMOS to PECL* Translator Description The MC10H352 is a quad translator for interfacing data between a CMOS logic section and the PECL section of digital systems when only a +5.0 Vdc power supply is
More informationMMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
More informationNTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
More informationMRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package
MRA43T3G Series, NRVA43T3G Series Surface Mount Standard Recovery Power Rectifier Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive
More informationNVMFD5C478NL. Power MOSFET. 40 V, 14.5 m, 29 A, Dual N Channel
NVMFDC478NL Power MOSFET 4 V, 4. m, 29 A, Dual N Channel Features Small Footprint ( x 6 mm) for Compact Design Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFDC478NLWF
More informationMUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers
MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.
More informationMMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
More informationMC74HCT4066A. Quad Analog Switch/ Multiplexer/Demultiplexer with LSTTL Compatible Inputs. High Performance Silicon Gate CMOS
MC4HCT4066A Quad Analog Switch/ Multiplexer/Demultiplexer with LSTTL Compatible Inputs High Performance Silicon Gate CMOS The MC4HCT4066A utilizes silicon gate CMOS technology to achieve fast propagation
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationMC10EP57, MC100EP V / 5V ECL 4:1 Differential Multiplexer
3.3V / 5V ECL 4:1 Differential Multiplexer Description The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open (pulled LOW via the input pulldown resistors) the device can
More informationMMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
More informationNCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier
NCS, NCSA. MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier The NCS operational amplifier provides rail to rail output operation. The output can swing within 7 mv to the positive rail and mv
More informationNSVF4017SG4. RF Transistor for Low Noise Amplifier. 12 V, 100 ma, f T = 10 GHz typ.
RF Transistor for Low Noise Amplifier 1 V, 0 ma, f T = GHz typ. This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
More informationMMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
More informationNTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
More informationLM321. Single Channel Operational Amplifier
Single Channel Operational Amplifier LM32 is a general purpose, single channel op amp with internal compensation and a true differential input stage. This op amp features a wide supply voltage ranging
More informationMMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
More informationMC74HC4066A. Quad Analog Switch/ Multiplexer/Demultiplexer. High Performance Silicon Gate CMOS
MC4HC466A Quad Analog Switch/ Multiplexer/Demultiplexer High Performance Silicon Gate CMOS The MC4HC466A utilizes silicon gate CMOS technology to achieve fast propagation delays, low ON resistances, and
More informationHigh Performance Silicon Gate CMOS
High Performance Silicon Gate CMOS The MC74HC4316A utilizes silicon gate CMOS technology to achieve fast propagation delays, low ON resistances, and low OFF channel leakage current. This bilateral switch/multiplexer/
More informationMJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
More informationFDS6986AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET
FDS9AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description The FDS9AS is designed to replace two single SO- MOSFETs and Schottky diode in synchronous DC:DC power supplies that
More informationNTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
More informationMBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction
More informationNTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
More informationNTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
More informationNCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
More informationNTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
More informationMBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
More informationMMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
More informationLM431SA, LM431SB, LM431SC. Programmable Shunt Regulator
A, B, C Programmable Shunt Regulator Description The A / B / C are three terminal the output adjustable regulators with thermal stability over operating temperature range. The output voltage can be set
More informationMMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
More informationLM393, LM293, LM2903, LM2903V, NCV2903, NCV2903V. Low Offset Voltage Dual Comparators
, LM293, LM293, LM293V, NCV293, NCV293V Low Offset Voltage Dual Comparators The series are dual independent precision voltage comparators capable of single or split supply operation. These devices are
More information