MC14066B. Quad Analog Switch/Quad Multiplexer
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1 Quad Analog Switch/Quad Multiplexer The MC4066B consists of four independent switches capable of controlling either digital or analog signals. This quad bilateral switch is useful in signal gating, chopper, modulator, demodulator and CMOS logic implementation. The MC4066B is designed to be pinforpin compatible with the MC406B, but has much lower ON resistance. Input voltage swings as large as the full supply voltage can be controlled via each independent control input. Features Triple Diode Protection on All Control Inputs Supply oltage Range = 3.0 dc to 8 dc Linearized Transfer Characteristics Low Noise 2 n/ Cycle, f.0 khz typical PinforPin Replacement for CD406, CD406, MC406B For Lower R ON, Use The HC4066 HighSpeed CMOS Device PbFree Packages are Available MAXIMUM RATINGS (oltages Referenced to ) Symbol Parameter alue Unit DC Supply oltage Range 0.5 to +8.0 in, out I in Input or Output oltage Range (DC or Transient) Input Current (DC or Transient) per Control Pin 0.5 to ± 0 ma I SW Switch Through Current ± 25 ma P D Power Dissipation, per Package (Note ) 500 mw T A Ambient Temperature Range 55 to +25 C T stg Storage Temperature Range 65 to +50 C T L Lead Temperature (8Second Soldering) 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Temperature Derating: Plastic P and D/DW Packages: 7.0 mw/ C From 65 C To 25 C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this highimpedance circuit. For proper operation, in and out should be constrained to the range ( in or out ). Unused inputs must always be tied to an appropriate logic voltage level (e.g., either or ). Unused outputs must be left open. PDIP4 P SUFFIX CASE 646 SOIC4 D SUFFIX CASE 75A TSSOP4 DT SUFFIX CASE 948G SOEIAJ4 F SUFFIX CASE MARKING DIAGRAMS MC4066BCP AWLYYWWG BG AWLYWW 4 066B ALYW A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week G or = PbFree Package (Note: Microdot may be in either location) MC4066B ALYWG ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2006 October, 2006 Rev. 7 Publication Order Number: MC4066B/D
2 PIN ASSIGNMENT IN 4 OUT 2 3 CONTROL OUT CONTROL 4 IN 2 4 IN 4 CONTROL OUT 4 CONTROL OUT IN 3 3 CONTROL IN 5 CONTROL 2 4 IN 2 6 CONTROL 3 8 IN 3 2 CONTROL 4 BLOCK DIAGRAM IN 4 2 OUT 3 OUT 2 9 OUT 3 0 OUT 4 = PIN 4 = PIN 7 LOGIC DIAGRAM AND TRUTH TABLE (/4 OF DEICE SHOWN) IN/OUT CONTROL Control Switch 0= OFF = ON OUT/IN Logic Diagram Restrictions in out CIRCUIT SCHEMATIC (/4 OF CIRCUIT SHOWN) CMOS INPUT 300 2
3 Î ELECTRICAL CHARACTERISTICS 55 C 25 C Î 25 C Characteristic Symbol Test Conditions Min Max Min Typ (2) Max Min Max Unit Î SUPPLY REQUIREMENTS (oltages Referenced to EE ) Power Supply oltage Î Range Î Quiescent Current Per I Package DD 5.0 Control Inputs: A 0 in = or, Switch I/O: I/O DD, and switch 500 m (3) Total Supply Current I D(A) 5.0 T A = 25 C only The A (0.07 A/kHz) f + I (Dynamic Plus Quiescent, Î 0 channel component, DD Typical (0.20 A/kHz) f + I Per Package 5 ( in out )/R on, is DD not included.) (0.36 A/kHz) f + I DD Î CONTROL INPUTS (oltages Referenced to ) LowLevel Input oltage IL 5.0 R on = per spec, 0 I off = per spec HighLevel Input oltage IH 5.0 R 0 on = per spec, I off = per spec Î Input Leakage Current I in 5 in = 0 or ± 0. ± ± 0. ±.0 A Input Capacitance C in Î pf Î SWITCHES IN AND OUT (oltages Referenced to ) Recommended Peakto I/O Peak oltage Into or Out of the Switch Î Channel On or Off 0 Î 0 0 DD p p Recommended Static or switch Channel On m Dynamic oltage Across Î the Switch (3) (Figure ) Output Offset oltage OO in = 0, No Load 0 ON Resistance R on 5.0 switch 500 m 0 (3), in = IL or IH (Control), and in = to (Switch) ON Resistance Between R on Any Two Channels Î 5.0 0Î in the Same Package Î OffChannel Leakage I Current (Figure 6) off 5 in = IL or IH ±00 ± 0.05 ±00 ± 000 na (Control) Channel to Channel or Any One Channel Î Capacitance, Switch I/O C I/O Switch Off 0 5 pf Î Capacitance, Feedthrough C I/O 0.47 pf (Switch Off) 2. Data labeled Typ is not to be used for design purposes, but is intended as an indication of the IC s potential performance. 3. For voltage drops across the switch ( switch ) > 600 m ( > 300 m at high temperature), excessive current may be drawn; i.e. the current out of the switch may contain both and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded. (See first page of this data sheet.) 3
4 Î ELECTRICAL CHARACTERISTICS (Note 4) (C L = 50 pf, T A = 25 C unless otherwise noted.) Characteristic Symbol dc Min Typ (5) Max Unit Î Propagation Delay Times SS = 0 dc t Input to Output (R L = 0 k ) PLH, t PHL ns t PLH, t PHL = (0.7 ns/pf) C L ns t PLH, t PHL = (0.08 ns/pf) C L ns t PLH, t PHL = (0.06 ns/pf) C L ns Control to Output (R L = k ) (Figure 2) t PHZ ns Output to High Impedance Output 0 to High Impedance t PLZ ns Î High Impedance to Output t PZH ns High Impedance to Output 0 t PZL ns Second Harmonic Distortion = 5 dc ( in =.77 dc, RMS 0.0 dc, R L % = 0 k, f =.0 khz) Bandwidth (Switch ON) (Figure 3) SS = 5 dc (R L = k, 20 Log ( out / in ) = 3 db, C L = 50 pf, MHz in = 5 pp ) Feedthrough Attenuation (Switch OFF) SS = 5 dc ( in = 5 pp, R L = k, f in db =.0 MHz) (Figure 3) Channel Separation (Figure 4) SS = 5 dc ( in = 5 pp, R L = k, f in = 8.0 MHz) db (Switch A ON, Switch B OFF) Î Crosstalk, Control Input to Signal Output (Figure 5) = 5 dc (R = k, R L = 0 k, Control t TLH = t THL = 20 ns) m pp 4. The formulas given are for the typical characteristics only at 25 C. 5. Data labelled Typ is not to be used for design purposes but is intended as an indication of the IC s potential performance. 4
5 ORDERING INFORMATION MC4066BCP MC4066BCPG MC4066BD MC4066BDG MC4066BDR2 MC4066BDR2G MC4066BDTR2 MC4066BDTR2G MC4066BF MC4066BFG MC4066BFEL Device Package Shipping PDIP4 PDIP4 (PbFree) SOIC4 SOIC4 (PbFree) SOIC4 SOIC4 (PbFree) TSSOP4* TSSOP4* SOEIAJ4 SOEIAJ4 (PbFree) SOEIAJ4 25 Units / Rail 55 Units / Rail 2500 / Tape & Reel 50 Units / Rail MC4066BFELG SOEIAJ4 (PbFree) 2000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. *This package is inherently PbFree. 5
6 TEST CIRCUITS out ON SWITCH C R L C L CONTROL SECTION OF IC SOURCE LOAD C out out 20 ns t PZH 0% t PZL 90% in x 90% DD 50% 0% tphz 90% in = t PLZ x = in = 0% x = Figure. Across Switch Figure 2. TurnOn Delay Time Test Circuit and Waveforms C = FOR BANDWIDTH TEST C = FOR FEEDTHROUGH TEST 2 2 in R L C L in out R L C L C R L C L Figure 3. Bandwidth and Feedthrough Attenuation Figure 4. Channel Separation OFF CHANNEL UNDER TEST k in R L 0 k out C L = 50 pf CONTROL SECTION OF IC A C = 5.0 TO SWING Figure 5. Crosstalk, Control to Output Figure 6. Off Channel Leakage 6
7 0 k KEITHLEY 60 DIGITAL MULTIMETER k RANGE XY PLOTTER Figure 7. Channel Resistance (R ON ) Test Circuit TYPICAL RESISTANCE CHARACTERISTICS R ON, ON" RESISTANCE (OHMS) T A = 25 C 25 C 55 C R ON, ON" RESISTANCE (OHMS) T A = 25 C 25 C 55 C in, INPUT OLTAGE (OLTS) Figure 8. = 7.5, = in, INPUT OLTAGE (OLTS) Figure 9. = 5.0, = 5.0 R ON, ON" RESISTANCE (OHMS) T A = 25 C 25 C 55 C R ON, ON" RESISTANCE (OHMS) T A = 25 C = in, INPUT OLTAGE (OLTS) Figure 0. = 2.5, = in, INPUT OLTAGE (OLTS) Figure. Comparison at 25 C, = 7
8 APPLICATIONS INFORMATION Figure A illustrates use of the Analog Switch. The 0to5 digital control signal is used to directly control a 5 peaktopeak analog signal. The digital control logic levels are determined by and. The voltage is the logic high voltage, the voltage is logic low. For the example, = + 5 = logic high at the control inputs; = GND = 0 = logic low. The maximum analog signal level is determined by and. The analog voltage must not swing higher than or lower than. The example shows a 5 peaktopeak signal which allows no margin at either peak. If voltage transients above and/or below are anticipated on the analog channels, external diodes (D x ) are recommended as shown in Figure B. These diodes should be small signal types able to absorb the maximum anticipated current surges during clipping. The absolute maximum potential difference between and is 8. Most parameters are specified up to 5 which is the recommended maximum difference between and pp ANALOG SIGNAL SWITCH IN SWITCH OUT 5 pp ANALOG SIGNAL GND EXTERNAL CMOS DIGITAL CIRCUITRY 0TO5 DIGITAL CONTROL SIGNALS MC4066B Figure A. Application Example D X D X SWITCH IN SWITCH OUT D X D X Figure B. External Germanium or Schottky Clipping Diodes 8
9 PACKAGE DIMENSIONS PDIP4 CASE ISSUE P B NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. T N SEATING PLANE A INCHES MILLIMETERS DIM MIN MAX MIN MAX A B F L C D C F G 0.00 BSC 2.54 BSC H J K K J L M 0 0 H G D 4 PL M N (0.005) M 9
10 PACKAGE DIMENSIONS SOIC4 CASE 75A03 ISSUE H T SEATING PLANE G A 4 8 D 4 PL 7 B K P 7 PL C 0.25 (0.00) M T B S A S 0.25 (0.00) M B M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.5 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.27 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS INCHES R X 45 F DIM MIN MAX MIN MAX A B C D M J F G.27 BSC BSC J K M P R SOLDERING FOOTPRINT* 4X X X PITCH DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0
11 PACKAGE DIMENSIONS TSSOP4 CASE 948G0 ISSUE B 0.5 (0.006) T 0.5 (0.006) T L 0.0 (0.004) T SEATING PLANE U U S 2X L/2 PIN IDENT. S D C 4 4X K REF 0.0 (0.004) M T U S S N (0.00) M B U 7 A G H N J J F DETAIL E K K ÇÇÇ ÉÉÉ SECTION NN DETAIL E W NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.5 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.00) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE W. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F G 0.65 BSC BSC H J J K K L 6.40 BSC BSC M SOLDERING FOOTPRINT* PITCH 4X X.26 DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
12 PACKAGE DIMENSIONS SOEIAJ4 CASE 9650 ISSUE A L E 4 8 Q E H E M 7 L Z DETAIL P D IEW P e A c b A 0.3 (0.005) M 0.0 (0.004) NOTES: М. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. М 2. CONTROLLING DIMENSION: MILLIMETER. М 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.5 (0.006) PER SIDE. М 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. М 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.08). MILLIMETERS INCHES DIM MIN MAX MIN MAX A A b c D E e.27 BSC BSC H E L E M Q Z ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 8027 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MC4066B/D
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NS5S1153. DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability
DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NS5S1153 is a DPDT switch for combined true ground audio and USB 2.0 high speed data applications. It allows portable systems to
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.
LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions.
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
NLAS7222B, NLAS7222C. High-Speed USB 2.0 (480 Mbps) DPDT Switches
High-Speed USB 2.0 (480 Mbps) DPDT Switches ON Semiconductor s NLAS7222B and NLAS7222C are part of a series of analog switch circuits that are produced using the company s advanced sub micron CMOS technology,
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NUF8001MUT2G. 8-Channel EMI Filter with Integrated ESD Protection
8-Channel EMI Filter with Integrated ESD Protection The NUF8MU is a eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = and C = 2 pf deliver
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
MC14040B. MARKING DIAGRAMS. MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.) ORDERING INFORMATION PDIP 16 P SUFFIX CASE 648
The MC14040B 12 stage binary counter is cotructed with MOS P channel and N channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
TCA0372, TCA0372B. 1.0 A Output Current, Dual Power Operational Amplifiers
.0 A Output Current, Dual Power Operational Amplifiers The TCA0372 is a monolithic circuit intended for use as a power operational amplifier in a wide range of applications, including servo amplifiers
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NB2879A. Low Power, Reduced EMI Clock Synthesizer
Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic
MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
NLAS323. Dual SPST Analog Switch, Low Voltage, Single Supply A4 D
Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS323 is a dual SPST (Single Pole, Single Throw) switch, similar to /2 a standard 466. The device permits the independent selection of 2 analog/digital
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
NUF6105FCT1G. 6-Channel EMI Filter with Integrated ESD Protection
6-Channel EMI Filter with Integrated ESD Protection The NUF615FC is a six channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 27 pf deliver
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection
8-Channel EMI Filter with Integrated ESD Protection The NUF841MN is an eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 12 pf
NLAS7213. High-Speed USB 2.0 (480 Mbps) DPST Switch
High-Speed USB 2.0 (480 Mbps) DPST Switch The NLAS723 is a DPST switch optimized for high speed USB 2.0 applications within portable systems. It features ultra low off capacitance, C OFF = 3.0 pf (typ),
MM74HC04 Hex Inverter
MM74HC04 Hex Inverter Features Typical propagation delay: 8ns Fan out of 10 LS-TTL loads Quiescent power consumption: 10µW maximum at room temperature Low input current: 1µA maximum General Description
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device
3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device Functional Description P3P85R0A is a versatile, 3.3 V, LVCMOS, wide frequency range, TIMING SAFE Peak EMI reduction device. TIMING SAFE
NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD, MJDC (NPN), MJD, MJDC (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
1N5908RL4G Watt Mosorb Zener Transient Voltage Suppressors. Unidirectional*
Preferred Device 5 Watt Mosorb Zener Transient oltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
NLAS4051. Analog Multiplexer/ Demultiplexer. TTL Compatible, Single Pole, 8 Position Plus Common Off
NLAS4 Analog Multiplexer/ Demultiplexer TTL Compatible, SinglePole, 8Position Plus Common Off The NLAS4 is an improved version of the MC4 and MC74HC4 fabricated in submicron Silicon Gate CMOS technology
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features
NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current