MC14001B Series. B-Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B
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1 MC4B Series B-Suffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features Supply Voltage Range =. Vdc to Vdc All Outputs Buffered Capable of Driving Two Lowpower TTL Loads or One Lowpower Schottky TTL Load Over the Rated Temperature Range. Double Diode Protection on All Inputs Except: Triple Diode Protection on MC4B and MC4B PinforPin Replacements for Corresponding CD4 Series B Suffix Devices PbFree Packages are Available MAXIMUM RATINGS (Voltages Referenced to ) Symbol Parameter Value Unit DC Supply Voltage Range. to +. V V in, V out I in, I out P D Input or Output Voltage Range (DC or Transient) Input or Output Current (DC or Transient) per Pin Power Dissipation, per Package (Note ). to +. V ± ma mw T A Ambient Temperature Range to + C T stg Storage Temperature Range 6 to + C T L V ESD Lead Temperature (Second Soldering) ESD Withstand Voltage Human Body Model Machine Model Charged Device Model 6 C > > N/A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Temperature Derating: Plastic P and D/DW Packages:. mw/ C From 6 C To C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this highimpedance circuit. For proper operation, V in and V out should be constrained to the range (V in or V out ). Unused inputs must always be tied to an appropriate logic voltage level (e.g., either or ). Unused outputs must be left open. V Device MC4B MC4B MC4B MC4B MC4B PDIP4 P SUFFIX CASE 646 D SUFFIX CASE A TSSOP4 DT SUFFIX CASE 94G SOEIAJ4 F SUFFIX CASE 96 4 DEVICE INFORMATION Description Quad Input NOR Gate Quad Input NAND Gate Triple Input NAND Gate 4 Triple Input NOR Gate Quad Input OR Gate MARKING DIAGRAMS MC4xxBCP AWLYYWWG 4 4 4xxBG AWLYWW 4 xxb ALYW xx = Specific Device Code A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week G or = PbFree Package (Note: Microdot may be in either location) MC4B MC4B MC4B Triple Input AND Gate Quad Input AND Gate Dual 4Input AND Gate MC4xxB ALYWG ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, September, Rev. Publication Order Number: MC4B/D
2 MC4B Series LOGIC DIAGRAMS NOR NAND OR AND MC4B Quad Input NOR Gate MC4B Quad Input NAND Gate MC4B Quad Input OR Gate MC4B Quad Input AND Gate INPUT MC4B Triple Input NOR Gate MC4B Triple Input NAND Gate MC4B Triple Input AND Gate MC4B Dual 4Input AND Gate INPUT MC4B Quad Input NOR Gate MC4B Quad Input NAND Gate PIN ASSIGNMENTS MC4B Triple Input NAND Gate 4 9 = PIN 4 = PIN FOR ALL DEVICES NC = 6, MC4B Triple Input NOR Gate IN A IN A 4 IN D IN A IN A 4 IN D IN A IN A 4 IN C IN A IN A 4 OUT A IN D OUT A IN D IN B IN C IN B OUT B 4 OUT D OUT B 4 OUT D IN B 4 IN C IN B 4 IN B OUT C IN B OUT C IN B OUT C IN B IN B 6 9 IN C IN B 6 9 IN C OUT B 6 9 OUT A OUT B 6 9 IN C IN C IN A IN C IN C IN C OUT C OUT A IN A MC4B Quad Input OR Gate MC4B Triple Input AND Gate MC4B Quad Input AND Gate MC4B Dual 4Input AND Gate IN A IN A 4 IN D IN A IN A 4 IN C IN A IN A 4 IN D OUT A IN A 4 OUT A IN D IN B IN C OUT A IN D IN A OUT B 4 OUT D IN B 4 IN C OUT B 4 OUT D IN A 4 IN B OUT C IN B OUT C IN B OUT C IN 4 A IN B 6 9 IN C OUT B 6 9 OUT A IN B 6 9 IN C NC 6 9 IN C IN A IN C OUT B IN 4 B IN B IN B IN B NC NC = NO CONNECTION
3 MC4B Series ELECTRICAL CHARACTERISTICS (Voltages Referenced to ) ÎÎ C C ÎÎ C Î Characteristic Î Symbol Vdc Min MaxÎ Min Typ () Î Max Min Max Unit Î Output Voltage Level Î V OL..Î Î.. Vdc V Î in = or Î Level V OH ÎÎ. 4.9 Î V in = or Î Î 9.9 Vdc Input Voltage Level V Î (V O = 4. or. Vdc) Î IL Vdc. Î (V O = 9. or. Vdc)..Î.. 4.Î... (V O =. or. Vdc) Level V Î (V O =. or 4. Vdc) Î IH Vdc. Î (V O =. or 9. Vdc)... Î...Î.. (V O =. or. Vdc). Output Drive Current I Î (V OH =. Vdc) Source Î OH madc.. Î.4 4.Î. Î (V OH = 4.6 Vdc)..64 Î...6 (V Î OH = 9. Vdc) (V OH =. Vdc) 4..4.Î.4 Î (V OL =.4 Vdc) Sink Î I OL..64 Î (V OL =. Vdc).6. Î...6ÎÎ.Î.9 madc (V OL =. Vdc) Input Current I in ±. ±. ±. ±. Adc ÎÎ Input Capacitance C Î (V in = ) Î in.î. pf Î Quiescent Current Î I DD. Î (Per Package).. Î..Î. Î.. Adc... Total Supply Current () (4) I Î (Dynamic plus Quiescent, Î T. I ÎÎ T = (. A/kHz) f + I DD /N Adc I T = (.6 A/kHz) f + I DD /N Per Gate, C Î L = pf) I Î T = (.9 A/kHz) f + I DD /N. Data labelled Typ is not to be used for design purposes but is intended as an indication of the IC s potential performance.. The formulas given are for the typical characteristics only at C. 4. To calculate total supply current at loads other than pf: I T (C L ) = I T ( pf) + (C L ) Vfk where: I T is in A (per package), C L in pf, V = ( ) in volts, f in khz is input frequency, and k =. x the number of exercised gates per package.
4 MC4B Series BSERIES GATE SWITCHING TIMES SWITCHING CHARACTERISTICS () (C L = pf, T A = C) V Characteristic ÎÎ Symbol Î DD Vdc Î Min Î Typ Î (6) Max Unit Output Rise Time, All BSeries Gates ÎÎ t TLH Î Î Î ns t TLH = (. ns/pf) C L + ns ÎÎ. Î Î Î t TLH = (.6 ns/pf) C L + ns t TLH = (.4 ns/pf) C L + ns Î 4 Î Output Fall Time, All BSeries Gates t THL Î Î Î ns t THL = (. ns/pf) C L + ns ÎÎ. Î Î Î t THL = (.6 ns/pf) C L + ns t THL = (.4 ns/pf) C L ÎÎ Î Î Î + ns 4 Propagation Delay Time t MC4B, MC4B only ÎÎ PLH, t PHL ns Î Î Î t PLH, t PHL = (.9 ns/pf) C L + ns ÎÎ. Î Î Î t PLH, t PHL = (.6 ns/pf) C L + ns t PLH, t PHL = (.6 ns/pf) C L + ns ÎÎ Î Î 4 Î All Other,, and 4 Input Gates t PLH, t PHL = (.9 ns/pf) C L Î + ns. 6 t PLH, t PHL = (.6 ns/pf) C L + 4 ns ÎÎ Î Î 6 Î t PLH, t PHL = (.6 ns/pf) C L + ns Î Input Gates (MC46B, MC4B) t PLH, t PHL = (.9 ns/pf) C L + ns ÎÎ. Î Î Î t PLH, t PHL = (.6 ns/pf) C L + 6 ns Î t PLH, t PHL = (.6 ns/pf) C L + 4 ns. The formulas given are for the typical characteristics only at C. 6. Data labelled Typ is not to be used for design purposes but is intended as an indication of the IC s potential performance. 6 PULSE GENERATOR INPUT * 4 C L OUTPUT *All unused inputs of AND, NAND gates must be connected to. All unused inputs of OR, NOR gates must be connected to. ns ns INPUT 9% % % t PHL t PLH OUTPUT INVERTING OUTPUT NON-INVERTING t THL t PLH t TLH V 9% V OH % % V OL t TLH t PHL V OH 9% % % V OL t THL Figure. Switching Time Test Circuit and Waveforms 4
5 MC4B Series CIRCUIT SCHEMATIC NOR, OR GATES MC4B, MC4B One of Four Gates Shown MC4B One of Three Gates Shown, 6,, 4,,,, 9, *, 4,, 4,, 4 * *Inverter omitted in MC4B 9, 6,,, *Inverter omitted in MC4B CIRCUIT SCHEMATIC NAND, AND GATES MC4B, MC4B One of Three Gates Shown MC4B, MC4B One of Four Gates Shown * 4, 4,,, 4, 4,, 9,,, *, 6,, *Inverter omitted in MC4B,, 9, 6, *Inverter omitted in MC4B
6 MC4B Series TYPICAL BSERIES GATE CHARACTERISTICS NCHANNEL DRAIN CURRENT (SINK) PCHANNEL DRAIN CURRENT (SOURCE) I D, DRAIN CURRENT (ma) T A = - C + C - 4 C + C + C I D, DRAIN CURRENT (ma) T A = - C + C - 4 C + C + C V DS, DRAIN-TO-SOURCE VOLTAGE (Vdc) V DS, DRAIN-TO-SOURCE VOLTAGE (Vdc) Figure. V GS =. Vdc Figure. V GS =. Vdc - I D, DRAIN CURRENT (ma) T A = - C - 4 C + C + C + C I D, DRAIN CURRENT (ma) T A = - C - 4 C + C + C + C V DS, DRAIN-TO-SOURCE VOLTAGE (Vdc) V DS, DRAIN-TO-SOURCE VOLTAGE (Vdc) Figure 4. V GS = Vdc Figure. V GS = Vdc I D, DRAIN CURRENT (ma) T A = - C - 4 C + C + C + C I D, DRAIN CURRENT (ma) T A = - C - 4 C + C + C + C V DS, DRAIN-TO-SOURCE VOLTAGE (Vdc) Figure 6. V GS = Vdc V DS, DRAIN-TO-SOURCE VOLTAGE (Vdc) Figure. V GS = Vdc These typical curves are not guarantees, but are design aids. Caution: The maximum rating for output current is ma per pin. 6
7 MC4B Series TYPICAL BSERIES GATE CHARACTERISTICS (cont d) VOLTAGE TRANSFER CHARACTERISTICS V out, OUTPUT VOLTAGE (Vdc) SINGLE INPUT NAND, AND MULTIPLE INPUT NOR, OR SINGLE INPUT NOR, OR MULTIPLE INPUT NAND, AND V out, OUTPUT VOLTAGE (Vdc) SINGLE INPUT NAND, AND MULTIPLE INPUT NOR, OR SINGLE INPUT NOR, OR MULTIPLE INPUT NAND, AND V in, INPUT VOLTAGE (Vdc) V in, INPUT VOLTAGE (Vdc) Figure. =. Vdc Figure 9. = Vdc V out, OUTPUT VOLTAGE (Vdc) SINGLE INPUT NAND, AND MULTIPLE INPUT NOR, OR SINGLE INPUT NOR, OR MULTIPLE INPUT NAND, AND DC NOISE MARGIN The DC noise margin is defined as the input voltage range from an ideal or input level which does not produce output state change(s). The typical and guaranteed limit values of the input values V IL and V IH for the output(s) to be at a fixed voltage V O are given in the Electrical Characteristics table. V IL and V IH are presented graphically in Figure. Guaranteed minimum noise margins for both the and levels =. V with a. V supply V in, INPUT VOLTAGE (Vdc). V with a. V supply. V with a. V supply Figure. = Vdc V out V out V O V O V O V O V in V in V IL V IH (a) Inverting Function V IL V IH = VOLTS DC (b) NonInverting Function Figure. DC Noise Immunity
8 MC4B Series ORDERING INFORMATION MC4BCP MC4BCPG Device Package Shipping PDIP4 PDIP4 Units / Rail MC4BD MC4BDG MC4BDR MC4BDRG MC4BDTR MC4BDTRG MC4BFEL MC4BFELG TSSOP4* TSSOP4* SOEIAJ4 SOEIAJ4 Units / Rail Units / Tape & Reel Units / Tape & Reel MC4BCP MC4BCPG MC4BD MC4BDG MC4BDR MC4BDRG MC4BDTR MC4BDTRG MC4BF MC4BFG MC4BFEL MC4BFELG PDIP4 PDIP4 TSSOP4* TSSOP4* SOEIAJ4 SOEIAJ4 SOEIAJ4 SOEIAJ4 Units / Rail Units / Rail Units / Tape & Reel Units / Rail Units / Tape & Reel MC4BCP MC4BCPG MC4BD MC4BDG MC4BDR MC4BDRG MC4BFEL MC4BFELG PDIP4 PDIP4 SOEIAJ4 SOEIAJ4 Units / Rail Units / Rail Units / Tape & Reel Units / Tape & Reel
9 MC4B Series ORDERING INFORMATION MC4BCP MC4BCPG Device Package Shipping PDIP4 PDIP4 Units / Rail MC4BD MC4BDG MC4BDR MC4BDRG MC4BFEL MC4BFELG SOEIAJ4 SOEIAJ4 Units / Rail Units / Tape & Reel Units / Tape & Reel MC4BCP MC4BCPG MC4BD MC4BDG MC4BDR MC4BDRG MC4BDT MC4BDTG MC4BDTR MC4BDTRG MC4BFEL MC4BFELG PDIP4 PDIP4 TSSOP4* TSSOP4* TSSOP4* TSSOP4* SOEIAJ4 SOEIAJ4 Units / Rail Units / Rail Units / Tape & Reel 96 Units per Rail Units / Tape & Reel Units / Tape & Reel MC4BCP MC4BCPG MC4BD MC4BDG MC4BDR MC4BDRG MC4BFEL MC4BFELG PDIP4 PDIP4 SOEIAJ4 SOEIAJ4 Units / Rail Units / Rail Units / Tape & Reel Units / Tape & Reel 9
10 MC4B Series ORDERING INFORMATION MC4BCP MC4BCPG Device Package Shipping PDIP4 PDIP4 Units / Rail MC4BD MC4BDG MC4BDR MC4BDRG MC4BDTR MC4BDTRG MC4BFEL MC4BFELG TSSOP4* TSSOP4* SOEIAJ4 SOEIAJ4 Units / Rail Units / Tape & Reel Units / Tape & Reel MC4BCP MC4BCPG MC4BD MC4BDG PDIP4 PDIP4 Units / Box Units / Rail MC4BDR MC4BDRG Units / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D. *This package is inherently PbFree.
11 MC4B Series PACKAGE DIMENSIONS PDIP4 CASE 6466 ISSUE P 4 B NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 9.. CONTROLLING DIMENSION: INCH.. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.. ROUNDED CORNERS OPTIONAL. T N SEATING PLANE A INCHES MILLIMETERS DIM MIN MAX MIN MAX A B F L C D.... C F.4... G. BSC.4 BSC H J.... K K J L.9... M H G D 4 PL M N (.) M
12 MC4B Series PACKAGE DIMENSIONS CASE A ISSUE H T SEATING PLANE G A 4 D 4 PL B K P PL C. (.) M T B S A S. (.) M B M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 9.. CONTROLLING DIMENSION: MILLIMETER.. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION. (.6) PER SIDE.. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE. (.) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS INCHES R X 4 F DIM MIN MAX MIN MAX A B C D M J F G. BSC. BSC J K M P R....9 SOLDERING FOOTPRINT* 4X. X.4 4X.. PITCH DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
13 MC4B Series PACKAGE DIMENSIONS TSSOP4 CASE 94G ISSUE B. (.6) T. (.6) T L. (.4) T SEATING PLANE U U S X L/ PIN IDENT. S D C 4 4X K REF. (.4) M T U S V S N. (.) M B U A V G H N J J F DETAIL E K K ÇÇÇ ÉÉÉ SECTION NN DETAIL E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 9.. CONTROLLING DIMENSION: MILLIMETER.. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED. (.6) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED. (.) PER SIDE.. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE. (.) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE W. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C..4 D....6 F.... G.6 BSC.6 BSC H J J W K.9... K.9... L 6.4 BSC. BSC M SOLDERING FOOTPRINT*.6.6 PITCH 4X.6 4X.6 DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
14 MC4B Series PACKAGE DIMENSIONS SOEIAJ4 CASE 96 ISSUE A L E 4 Q E H E M L Z DETAIL P D VIEW P e A c b A. (.) M. (.4) NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 9.. CONTROLLING DIMENSION: MILLIMETER.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED. (.6) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE. (.) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE.46 (.). MILLIMETERS INCHES DIM MIN MAX MIN MAX A A.... b...4. c...4. D E..4.. e. BSC. BSC H E L E M Q..9.. Z ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado USA Phone: 6 or 446 Toll Free USA/Canada Fax: 66 or 446 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: 9 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: 4 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MC4B/D
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UMC2NT1, UMC3NT1, UMC5NT1
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NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
MARKING DIAGRAMS MAXIMUM RATINGS (Note 1.) ORDERING INFORMATION PDIP 16 P SUFFIX CASE 648 MC140xxBCP AWLYYWW
The MC14051B, MC14052B, and MC14053B analog multiplexers are digitally controlled analog switches. The MC14051B effectively implements an SP8T solid state switch, the MC14052B a DP4T, and the MC14053B
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
NTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package
NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection
Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
LM339, LM239, LM2901, LM2901V, NCV2901, MC3302. Single Supply Quad Comparators
LM339, LM239, LM290, LM290V, NCV290, MC3302 Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer, automotive,
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD, MJDC (NPN), MJD, MJDC (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
Symbol Parameter Value Unit V DD DC Supply Voltage Range 0.5 to V
MC4046B Phase Locked Loop The MC4046B phase locked loop contains two phase comparators, a voltagecontrolled oscillator (VCO), source follower, and zener diode. The comparators have two common signal inputs,
MM74HC04 Hex Inverter
MM74HC04 Hex Inverter Features Typical propagation delay: 8ns Fan out of 10 LS-TTL loads Quiescent power consumption: 10µW maximum at room temperature Low input current: 1µA maximum General Description
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.
LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions.
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23
NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
BS107, BS107A. Small Signal MOSFET 250 mamps, 200 Volts N Channel TO ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.
Preferred Device Small Signal MOSFET 250 mamps, 200 Volts NChannel Features PbFree Package is Available* 250 ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.4 (BS107A) MAXIMUM RATINGS Rating Symbol Value
MC14538B. MARKING DIAGRAMS. MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 2.) ORDERING INFORMATION
The MC14538B is a dual, retriggerable, resettable monostable multivibrator. It may be triggered from either edge of an input pulse, and produces an accurate output pulse over a wide range of widths, the
NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
NUD3124, SZNUD3124. Automotive Inductive Load Driver
Automotive Inductive Load Driver This microintegrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a freewheeling
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications
MJD9, NJVMJD9T4G (PNP) MJD3, NJVMJD3T4G (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed
NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD () MJD7 () Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
Adc. W W/ C T J, T stg 65 to C
Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =
MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89
NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
NTMD4820NR2G. Power MOSFET 30 V, 8 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET V, A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC
NTLUF4189NZ Power MOSFET and Schottky Diode
NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
SM05T1G Series, SZSM05T1G. Transient Voltage Suppressor Diode Array. SOT 23 Dual Common Anode Diodes for ESD Protection
, SZ Transient Voltage Suppressor Diode Array Dual Common Anode Diodes for ESD Protection These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features
NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single