50A, 600V Hyperfast Rectifier
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1 RHRG56F85 5A, 6V Hyperfast Rectifier Features High Speed Switching ( t rr I F =5A ) Low Forward Voltage( V F I F =5A ) Avalanche Energy Rated AECQ Qualified Applicatio Switching Power Supply Power Switching Circuits General Purpose Max Ratings (6V, 5A) The RHRG56F85 is an Hyperfast diode with soft recovery characteristics (trr < 45). It has half the recovery time of ultrafast diode and is of silicon nitride passivated ionimplanted epitaxial planar cotruction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of automotive switching power supplies and other power switching automotive applicatio. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching traistors. RHRG56F85 5A, 6V Hyperfast Rectifier Automotive and General Purpose Pin Assignments TO2472L. Cathode 2. Anode 2. Cathode 2. Anode Absolute Maximum Ratings = 25 C unless otherwise noted Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage 6 V V RWM Working Peak Reverse Voltage 6 V V R DC Blocking Voltage 6 V I F(AV) Average Rectified Forward = 25 C 5 A I FSM Nonrepetitive Peak Surge Current (Halfwave Phase 5Hz) 5 A E AVL Avalanche Energy (.4A, 4mH) 4 mj T J, T STG Operating Junction and Storage Temperature 55 to +75 C Thermal Characteristics = 25 C unless otherwise noted Symbol Parameter Max Units R θjc Maximum Thermal Resistance, Junction to Case.42 C/W R θja Maximum Thermal Resistance, Junction to Ambient 45 C/W Package Marking and Ordering Information Device Marking Device Package Tube Quantity RHRG56 RHRG56F85 TO Semiconductor Components Industries, LLC. September27, Rev. 3 Publication Order Number: RHRG56F85/D
2 Electrical Characteristics = 25 C unless otherwise noted Symbol Parameter Conditio Min. Typ. Max Units I R Itantaneous Reverse Current V R = 6V = 25 C 25 ua = 75 C.5 ma V FM Itantaneous Forward Voltage I F = 5A = 25 C = 75 C 2 t rr Reverse Recovery Time I F =A, di/dt = A/μs, V CC = 39V t a t b Q rr Reverse Recovery Time Reverse Recovery Charge Notes:. Pulse : Test Pulse width = 3μs, Duty Cycle = 2% 2. Guaranteed by design Test Circuit and Waveforms I F =5A, di/dt = A/μs, V CC = 39V I F =5A, di/dt = A/μs, V CC = 39V V V = 25 C = 25 C = 75 C = 25 C nc RHRG56F85 5A, 6V Hyperfast Rectifier 2
3 Typical Performance Characteristics Figure. Typical Forward Voltage Drop vs. Forward Current Forward Current, I F [A] = 75 o C = 25 o C Forward Voltage, V F [V] Figure 3.Typical Junction Capacitance Capacitances, Cj [pf] = 25 o C Typical Capacitance at V = 54pF Figure 2. Typical Reverse Current vs. Reverse Voltage Reverse Current, I R [μa].. E3 = 75 o C = 25 o C = 25 o C E Reverse Voltage, V R [V] Figure 4. Typical Reverse Recovery Time vs. di/dt Reverse Recovery Time, t rr [] = 25 o C = 25 o C = 75 o C I F = 5A RHRG56F85 5A, 6V Hyperfast Rectifier. Reverse Voltage, V R [V] Figure 5. Typical Reverse Recovery Current vs. di/dt Reverse Recovery Current, I rr [A] I F = 5A = 75 o C = 25 o C = 25 o C di/dt [A/μs] di/dt [A/μs] Figure 6. Forward Current Derating Curve Average Forward Current, I F(AV) [A] Case temperature, [ o C] 3
4 Typical Performance Characteristics (Continued) Reverse Recovery Charge, Q rr [nc] Figure 7. Reverse Recovery Charge I F = 5A = 75 o C = 25 o C = 25 o C di/dt [A/μs] Figure 8. Traient Thermal Respoe Curve RHRG56F85 5A, 6V Hyperfast Rectifier Z thjc (t), Thermal Respoe D= P DM t t 2 * Notes :. Z (t) =.42 o C/W Typ. thjc Duty Factor, D=t /t 2 single pulse 3. T T = P * Z (t) JM C DM thjc t, Square Wave Pulse Duration [sec] 4
5 Mechanical Dimeio TO2472L RHRG56F85 5A, 6V Hyperfast Rectifier Dimeio in Millimeters 5
6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor ow the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, coequential or incidental damages. Buyer is respoible for its products and applicatio using ON Semiconductor products, including compliance with all laws, regulatio and safety requirements or standards, regardless of any support or applicatio information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any licee under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@oemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
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