RF MILITARY MMRF2010N MMRF1312H MMRF1314H MMRF1317H HIGH POWER LDMOS AVIONICS DEVICES
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1 RF MILITARY MMRF2010N MMRF1312H MMRF1314H MMRF1317H HIGH POWER LDMOS AVIONICS DEVICES APRIL 2016
2 NXP RF Military Overview NXP RF (formerly Freescale) is #1 in RF power for cellular infrastructure* Strong presence in ISM, mobile radio, broadcast and avionics June 2013: Freescale RF announced new focus supporting U.S. defense industry NXP RF Military Value Proposition Products and Technology Leveraging 20 years of innovation in RF power Highest performing RF portfolio Support U.S. LDMOS fabrication and dedicated internal manufacturing NXP product longevity program (10 or 15 years) Dedicated U.S.-based applications & systems engineering support Compliance ITAR compliant, secure technical data handling *Source: ABI 2013 Report 1
3 MMRF2010N: 250 W Peak L-Band Transistor MHz 250 W Peak 50 V 1030 to 1090 MHz 250 W Peak, 50 V Gain: MHz, Drain Efficiency: 61.4% Housed in TO-270WB plastic package Ruggedness: > 10:1 VSWR Product Longevity Program: warranted availability until 2029 Typical Applications IFF and secondary radar Available Reference Circuits: MHz MHz 2
4 MMRF2010N: Featured Device Features Characterized over MHz On-chip input (50 ohm) and interstage matching Single ended Integrated ESD protection Low thermal resistance Integrated quiescent current temperature compensation with enable/disable function Competitive Advantages Suitable for use in pulse applications with large duty cycles and long pulses Device in NXP 15 year Product Longevity Program Able to replace multiple RF amplifiers with one wideband PA Application circuit support Dedicated RF Military team Availability: Device is in production as earless and gull winged. Orderable part number is MMRF2010NR1. 3
5 MMRF2010N Applications Circuit: 1030 to 1090 MHz 4
6 MMRF1312H: 1200 W Peak L-Band Transistor MHz 1200 W Peak 52 V High power 1200 W P3dB across 900 to 1215 MHz in one circuit Gain: MHz, Drain Efficiency: 54% Housed in NI-1230 air-cavity ceramic package High Ruggedness: > 20:1 VSWR Product Longevity Program: warranted availability until 2030 Typical Applications High power L-Band radar applications Avionics navigation applications Commercial aviation secondary surveillance radar Available Reference Circuits: MHz MHz 5
7 MMRF1312H: Featured Device Features Internally input and output matched for broadband operation and ease of use Device can be used in a single-ended, push-pull or quadrature configuration High ruggedness, handles > 20:1 VSWR Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing Characterized with series equivalent large-signal impedance parameters Competitive Advantages Suitable for use in pulse applications with large duty cycles and long pulses Device in NXP 15 year Product Longevity Program Able to replace multiple RF amplifiers with one wideband PA Application circuit support Dedicated RF Military team Availability: Device is in production as eared, earless and gull winged. Orderable part number is MMRF1312HR5. 6
8 MMRF1312H Applications Circuit: 900 to 1215 MHz 7
9 MMRF1312H: Gain, Efficiency and IRL versus Frequency 8
10 MMRF1312H: Gain and Efficiency versus Power 9
11 MMRF1312H: Power and Efficiency versus Frequency 10
12 MMRF1314H: 1000 W Peak L-Band Transistor MHz 1000 W Peak 52 V High power 1000 W Peak across 1200 to 1400 MHz in one circuit Gain: MHz, Drain Efficiency: 46.5% Housed in NI-1230 air-cavity ceramic package High Ruggedness: > 20:1 VSWR Product Longevity Program: warranted availability until 2030 Typical Applications High power L-Band radar applications Available Reference Circuits: MHz MHz 11
13 MMRF1314H: Featured Device Features Internally input and output matched for broadband operation and ease of use Device can be used in a single-ended, push-pull or quadrature configuration High ruggedness, handles > 20:1 VSWR Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing Characterized with series equivalent large-signal impedance parameters Competitive Advantages Device in NXP 15 year Product Longevity Program Able to replace multiple RF amplifiers with one wideband PA Application circuit support Dedicated RF Military team Availability: Device is in production as eared, earless and gull winged. Orderable part number is MMRF1314HR5. 12
14 MMRF1314H Applications Circuit: 1200 to 1400 MHz 13
15 MMRF1314H: Gain, Efficiency and IRL versus Frequency 14
16 MMRF1314H: Power and Efficiency versus Frequency 15
17 MMRF1314H: Gain and Efficiency versus Power 16
18 MMRF1317H: 1500 W Peak IFF Transistor MHz 1500 W Peak 50 V High power 1500 W P3dB Gain: MHz, Drain Efficiency: 56% Housed in NI-1230 air-cavity ceramic package High Ruggedness: > 10:1 VSWR Product Longevity Program: warranted availability until 2030 Typical Applications Defense and commercial pulse applications, such as IFF and secondary surveillance radars Available Reference Circuit: to 1090 MHz 17
19 MMRF1317H: Featured Device Features Internally input and output matched for broadband operation and ease of use Device can be used in a single-ended, push-pull or quadrature configuration High ruggedness, handles > 10:1 VSWR Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing Characterized with series equivalent large-signal impedance parameters Competitive Advantages Device in NXP 15 year Product Longevity Program Able to replace multiple RF amplifiers with one wideband PA Application circuit support Dedicated RF Military team Availability: Device is in production as eared, earless and gull winged. Orderable part number is MMRF1317HR5. 18
20 MMRF1317H Applications Circuit: 1030 to 1090 MHz 19
21 MMRF1317H: Gain and Efficiency versus Power 20
22
Freescale. RF Military Solutions. Worldwide leader in RF power the best choice for defense applications. Featuring New GaN Devices
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Announcing Second-Generation Airfast RF Power Solutions A2T07D160W04S A2T07H310-24S A2I22D050N A2I25D012N A2T26H160-24S J u n e. 2 0 1 4 Freescale and the Freescale logo are trademarks of Freescale Semiconductor,
Characteristic Symbol Value (2,3) Unit. Test Methodology
Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on--chip matching that makes it usable from 2110--2170 MHz.
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical
Watts W/ C Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C. Test Conditions
SEMICONDUCTOR TECHNICAL DATA The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 895 MHz band.
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz Suitable
NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V4P. Features. Functional Schematic.
Features GaN on Si HEMT D-Mode Transistor Suitable for Linear and Saturated Applications Tunable From 48 V Operation 16 db Gain @ 2.5 GHz 56 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Lead-Free 3x6 mm
BLC9G20LS-160PV. 160 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 2000 MHz.
Rev. 3 24 May 2017 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to