xbt The Infineon Advantage Advance LDMOS Technology Smart Discrete Package Manufacturing Rugged, Wideband Performance Leading-edge RF

Transcription

1 Infineon RF Power LDMOS Product Roadmap June, 2012

2 The Infineon Advantage Advance LDMOS Technology Smart Discrete Package Rugged, Wideband Performance Manufacturing xbt Leading-edge RF Performance Highest power density Excellent efficiency Lowers the amplitude of the gain spike. Space efficient Outstanding DPD performance due to improved impedance State-of-the-art Infineon LDMOS Fab, Regensburg, Germany Excellent linearity Enhanced DPD performance at high IB Robust transistors Thin die technology Lowers BB parasitics Enables high VBW Available for these package styles: characteristics at baseband Very high IBW Rugged Fully automated assembly and test production facility in Morgan Hill, CA, USA Low thermal resistance High RF consistency High reliability 275 (PP) 288 (SE, PP) 100% DC and RF power tested Overmold assembly in multiple AP facilities June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 2

3 LD9LF Technology Generation Updated Portfolio 700MHz to 1000 MHz Doherty applications MHz Up to 360 Watts Industry Leading Performance Best in Class Ruggedness & RF Performance Gain ~19dB (class AB, at optimum tuning point) Product level PAE ~60% Enhanced IBW (xbt) Smart Discrete Package LDMOS Gen LD9 provides 2% better efficiency and 2dB gain improvements High Power Density + Innovative Pkg Technology Enable Compact Doherty Designs Increased peak power >250W in Single Ended package >400W in Push-Pull Package Further Improved Thermal Performance Enhanced ruggedness and IBW (xbt) >270W >400W For Compact Doherty June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 3

4 Power Level 700 MHz Output Transistors PTFB073608FV xbt P1dB ~ 360 W MHz H /2 PTFA072401FL (xbt) P1dB ~ 210 W MHz H PTFB072707FH P1dB ~ 270 W MHz H /2 PTFB071502FC P1dB ~ 2x75 W MHz H ES Available 1H 12 PR 2H 12 Future June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 4

5 Power Level MHz Output Transistors PTFB093608FV P1dB ~ 360 W MHz H /2 PTFB093608FV xbt P1dB ~ 360 W MHz H /2 PTFB082817FH P1dB ~ 270 W MHz H /2 PTFB092707FH P1dB ~ 270 W MHz H /2 PTFB090901EA/FA P1dB ~ 90 W MHz H-3x265-2 ES Available 1H 12 PR 2H 12 Future June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 5

6 Introducing LD10 LDMOS Portfolio 1.8 GHz to 2.6 GHz Complete Lineup for Doherty Amplifiers Full Next Generation Platform 2% higher Doherty efficiency >1.5 db higher gain than LD9 Improved robustness under fast pulse condition First Products at 2.6 GHz Power Levels up to 280 W Asymmetric 10W + 20W for small cells PTFC261402FC Broadband Sweep Enhanced IBW Smart Discrete Package Strong Development Pipeline Increased peak power >300W in Single Ended package >400W in Push-Pull Package Enhanced xbt technologies for wider signal bandwidth Further Improved Thermals >270W >300W >400W June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 6

7 Power Level MHz Output Transistors PTFB193404F P1dB ~ 320 W MHz H /2 PTFB183404F P1dB ~ 320 W MHz H /2 PTFB193408SV xbt P1dB ~ 320 W MHz H-37275G-6/2 PTFB183408SV xbt P1dB ~ 320 W MHz H-34275G-6/2 PTFB182503EL/FL P1dB ~ 210 W MHz H-3x288-4/2 PTFB192503EL/FL P1dB ~ 210 W MHz H-3x288-4/2 PTAB182002FC P1dB ~ 200W Asymmetric (80+120W) MHz H PTFB191501E/F P1dB ~ 140W MHz H-3x248-2 ES Available 1H 12 PR 2H 12 Future June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 7

8 Gain [db] Efficiency Asymmetric Transistors Transistors for Doherty Configuration PTAB182002FC Doherty Performance 1C WCDMA, 1842 MHz, 28V, Idq=0.5A, 10dB PAR Peak : ~ 120 W Main : ~ 80 W MHz Typ. Doherty Gain : 16 db Efficiency : 44% Pout: 45 dbm Avg H Po [dbm avg] Gain Eff June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 8

9 Power Level MHz Output Transistors PTFB213004F P1dB ~ 280 W MHz H PTFB212503EL/FL P1dB ~ 210 W MHz H-3x288-6 PTFB211803EL/FL P1dB ~ 160 W MHz H-3x288-6 PTFB213208FV xbt P1dB ~ 320 W MHz H /2 PTFB212507SH xbt P1dB ~ 210 W MHz H-34288G-4/2 PTFB211501E/F P1dB ~ 140 W MHz H-3x248-2 PTFB211503EL/FL P1dB ~ 140 W MHz H-3x288-6 PTFB201402FC P1dB ~ 2x70 W MHz H PTFB210801FA P1dB ~ 80W MHz H ES Available 1H 12 PR 2H 12 Future June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 9

10 Power Level GHz Output Transistors PTFC262808FV xbt P1dB ~ 4x70 W 2.6 GHz H /2 PTF241402FC P1dB ~ 2x70 W GHz H PTFC261402FC P1dB ~ 2x70 W 2.6 GHz H PTFC260402FC P1dB ~ 2x20 W 2.6 GHz H PTAC260302FC P1dB ~ 10W/20 W 2.6 GHz H PTFC260202FC P1dB ~ 2x10 W 2.6 GHz H ES Available 1H 12 PR 2H 12 Future June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 10

11 Power Level Non-Cellular 50V Output Transistors PTVA101K02EV 50V P1 db~1000 W MHz H Matched I/O PTVA035002EV P1 db~450 W MHz H Unmatched 50V PTVA123501EV 50V P1 db~350 W GHz H Matched I/O PTVA106001EC P1 db~500 W MHz H Matched I/O 50V PTVA120251EA P1 db~25 W GHz H Unmatched 50V PTVA030121EA P1 db~12 W MHz H Unmatched 50V ES Available 1H 12 PR 2H 12 Future June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 11

12 Gain [db] Innovative 30W Asymmetric Doherty Device for LTE 2.6GHz 5W Pico/Micro Base Station Asymmetric Doherty configuration Product Features Main : 14-15W (P -1dB Z opt Peak : 18-19W (P -1dB Z opt Operating Frequency GHz Linear Gain 19dB Efficiency (Main) P -3dB CW VBW >300MHz (LF gain peak) Package 248 T2PAC (pure copper flange) Based on latest LD10M technology Superior performance at high frequency Very high ruggedness Best-in-class 2.6GHz Exceeds competing devices by ~5% efficiency and ~2dB gain Push-Pull Package 20.6 x 9.8 mm Gain at Po=41.0dBm Freq [MHz] Meas Key Benefits High efficiency, high performance solution for 2.6GHz Compact 2-in-1 solution for 5W P ave Doherty final stage in pico/micro base station Smallest heatsink requirement and CTE matched to copper coin, due to pure copper flange Long-term reliability through LD10M s very high ruggedness June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 12

13 LDMOS RF Power 2-Stage Amplifiers 700 MHz to 2200 MHz Product Frequency MHz P OUT Watts Gain db Eff. % Test Signal V DD Volts Package PTMA080152M CW 28 PG-DSO-20 PTMA210152M CW 28 PG-DSO-20 PTMA080302M CW 28 PG-DSO-20 PTMA080304M x CW 28 PG-DSO-20 PTMA180402EL CDMA 28 H PTMA180402FL CDMA 28 H PTMA180402M CW 28 PG-DSO-20 PTMA210452EL WCDMA 28 H PTMA210452FL WCDMA 28 H June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 13

14 Unmatched General Purpose Transistors 700 MHz to 2200 MHz Product Frequency (MHz) P 1dB (W) Gain (db) Eff (%) Pout PEP (W) Test Signal Θjc ( C/W) VDD (V) Package PTFA220041M V T PTFA220081M V T PTFA220121M V T June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 14

15 Doherty Reference Designs MHz Assymetric Doherty - LTA Main: PTFB182503FL V1 Peak: PTFB183404F V1 58dBm P3dB 44% Efficiency at 8.5dB back off Assymetric Doherty - LTA Main: PTFB192503FL V1 Peak: PTFB193404F V1 58dBm P3dB 44% efficiency at 8.5dB back off Symmetric Doherty - LTD Target 1.8 GHz W-CDMA, GSM, and CDMA systems Smart Discrete design offers ultra-compact layout (500W) demo circuit Main & Peak: PTFB182503FL V1 P3dB >56dBm 44% efficiency at 6dB back off June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 15

16 Four new high power transistors for RADAR markets PTFB030121EA PTFB035002EV PTFB120251EA PTFB123501EC Freq Oper MHz MHz GHz GHz 1dB 12W 400W 30W 350W Efficiency 70% 74% 54% 53% Gain 24dB 19dB 16.5dB 15dB Pkg Type type type type type Ruggedness 10:1 VSWR 10:1 VSWR 10:1 VSWR 10:1 VSWR Test Cond. Pulse 12 microsec 10% duty cycle Pulse 12 microsec 10% duty cycle Pulse 100 microsec 10% duty cycle Pulse 100microsec 10% duty cycle June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 16

17 PTVA035002EV 500W, 50V, UHF Band Features: Designed for pulse applications; high voltage 50V Vdd Typical performance Class AB (Vdd=50V, 12microsec pulse width, 10% duty cycle, Pout = 500W, 450MHz) Gain: 18 db Drain Efficiency: 64% Typical performance Class B (Vdd = 50V, 12microsec pulse width, 10% duty cycle, Pout = 500W, 450MHz, Vg=2.9V) Gain = 15.5 db Drain Efficiency: 70% Capable of CW operation Capable of withstanding 13:1 load missmatch at 56dBm, 50V Excellent thermal performance Rth 0.2 degc/w June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 17

18 Appendix

19 RF Power Product Identification System PT X Y FF PPP C T O Vx (Ryyy) PTFB091607FH/1 V1 R250 Product Revision Optional: Customer Specific Product Optional Packing Type R250 - Tape & Reel 250pcs S250 Tape & Reel 250pcs Txxx Box with xxx parts Device Type: F Discrete 28V M 2-stage RFIC V Discrete 50V Open-Cavity Outlines A- 265 C- 248 H-288 V- 275 Overmolded None SON10 R - SON 12 Die Generation: No letter GM7 A GM8/LD8/LDH1 B LD9 C LD10 Frequency: ~ 2680 MHz ~ 2480 MHz ~ 2200 MHz ~ 2170 MHz ~ 1990 MHz ~ 1880 MHz ~ 1670 MHz ~ 1500 MHz ~ 960 MHz ~ 894 MHz ~ 770 MHz ~ 860 MHz Power Rating: watts watts watts etc. Package Technology: A Ceramic standard eared flange (obsolete) C Ceramic earless flange (obsolete) E Ceramic CPC eared flange (TEPAC) F Ceramic CPC earless flange (TEPAC) G Plastic open cavity eared (EPOC) H Plastic open cavity earless flange (EPOC) M Plastic over molded surface mount S Ceramic open cavity surface mount (TEPAC) Package Configuration/Auto-bias Discrete Transistors: 1 Single-Ended 2 Push-Pull 3 Four leads Smart Discrete SE 4 Four leads Smart Discrete PP 5 Four leads Smart Discrete + Autobias SE 6 Four leads Smart Discrete + Autobias PP 7 Two leads Smart Discrete SE 8 Two leads Smart Discrete PP For Hybrids/Modules - # of stages For ICs # of stages June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 19

20 June 7, 2012 Copyright Infineon Technologies All rights reserved. Page 20