Freescale. RF Military Solutions. Worldwide leader in RF power the best choice for defense applications. Featuring New GaN Devices
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1 Freescale RF Military Solutions Worldwide leader in RF power the best choice for defense applications Featuring New GaN Devices freescale.com/rfmilitary
2 Worldwide Industry Leader Freescale s RF power transistor products enable the majority of the world s cellular voice and data traffic every day, in the harshest environments on earth, making Freescale the world s largest and most-deployed supplier of RF power technology. RF Solutions for Military Freescale offers diverse technologies such as industry-leading LDMOS, GaAs and GaN on SiC to provide the best technological solution for each customer application. Dedicated Military s Team This team draws on Freescale s wealth of RF technology, design and applications experience to offer optimum RF solutions for defense applications such as radar, communications and electronic warfare. Freescale Advantages More than 20 years of RF industry leadership with the largest, most experienced RF engineering team in the world Freescale owned and operated high-volume manufacturing U.S.-based company with U.S. LDMOS fab Dedicated, specialized RF packaging R&D team that has produced the industry s highest performance packaging solutions 2 Document Title Goes Here
3 Benefits of Choosing Freescale RF for Your Defense Electronics Needs Broad line of COTS products repurposed and enabled for optimum performance in military systems, including radar, communications and electronic warfare Dedicated team of experts in military systems, applications, marketing and program management who support military customer applications Broadest line of RF technologies and products, including LDMOS, GaN and GaAs Domestic source of LDMOS and GaN technology Security of supply with product longevity guarantee of 10 or 15 years ITAR-compliant applications support and secure technical data handling Freescale RF Technology Advantages Highest RF ruggedness in the industry with > 65:1 sustained VSWR Highest gain and efficiency with LDMOS technology Broadest lines of packages, including high thermal efficiency over-molded plastic packages and low thermal resistance air cavity ceramic packages Integrated ESD protection with greater negative gate-source voltage range for improved Class C performance GaN: A New Industry-Leading Line Freescale s new best-in-class GaN products offer superior broadband performance, thermal efficiency, innovative packaging, and CW and long pulse performance that defense customers have been asking for. Contact your dedicated Freescale RF Military team to request samples or early access to new products. Freescale, the Worldwide Leader in RF Power the Best Choice for Defense Applications Questions? A new defense program challenge? A SWaP problem to solve? Contact Freescale s dedicated RF military team at RFMIL@freescale.com for the best support and to enable your innovative solutions. freescale.com 3
4 Freescale RF Military Solutions RF Military Power LDMOS Transistors: General Purpose, Radar and Communications General Purpose Driver ICs /Freq. db/ MMRF2005NR1 I/O AVG / TO-270WB-16 MMRF2005GNR1 I/O AVG / TO-270WBG-16 MMRF2006NT1 I AVG / PQFN 8 8 MMRF2004NBR1 I/O AVG / TO-272WB-16 MMRF2007NR1 I/O AVG / TO-270WBL-16 MMRF2007GNR1 I/O AVG / TO-270WBLG-16 General Purpose Driver Transistors 28 Volt LDMOS /Freq. db/ MMRF1014NT1 U AVG 28 18/ PLD-1.5 MMRF1015NR1 U AVG 28 18/ TO MMRF1015GNR1 U AVG 28 18/ TO-270G-2 MMRF1004NR1 I PEP / TO MMRF1004GNR1 I PEP / TO-270G-2 MMRF1315NR1 I/O CW / TO MMRF1017NR3 I/O AVG / OM-780-2L 50 Volt LDMOS MMRF1012NR1 U CW / TO MMRF1304LR5 U To Peak / NI MMRF1304NR1 U To CW / TO MMRF1304GNR1 U To CW / TO-270G-2 MMRF1305HR5 U To CW / NI-780H-4L 4
5 Freescale RF Military Solutions General Purpose Driver Transistors (continued) /Freq. db/ MMRF1305HSR5 U To CW / NI-780S-4L MMRF1316NR1 I/O CW 50 25/ TO-270WB-4 MMRF1318NR1 U CW 50 22/ TO-270WB-4 Radar HF, VHF and UHF Radar /Freq. db/ MMRF1012NR1 U CW / TO MMRF1304LR5 U To Peak / NI MMRF1304NR1 U To CW / TO MMRF1304GNR1 U To CW / TO-270G-2 MMRF1315NR1 I/O CW / TO MMRF1305HR5 U To CW / NI-780H-4L MMRF1305HSR5 U To CW / NI-780S-4L MMRF NR3 I AVG / OM-780-4L MMRF GNR3 I AVG / OM-780G-4L MMRF1310HR5 U To CW / NI-780H-4L MMRF1310HSR5 U To CW / NI-780S-4L MMRF1316NR1 I/O CW 50 25/ TO-270WB-4 MMRF1318NR1 U CW 50 22/ TO-270WB-4 MMRF1016HR5 U To Peak 50 25/ NI-1230H-4S MMRF1308HR5 U To CW / NI-1230H-4S MMRF1308HSR5 U To CW / NI-1230S-4S MMRF1311H* I AVG 50 20/ NI-1230H-4S MMRF1006HR5 U Peak 50 20/ NI-1230H-4S MMRF1006HSR5 U Peak 50 20/ NI-1230S-4S MMRF1306HR5 U CW / NI-1230H-4S MMRF1306HSR5 U CW / NI-1230S-4S * Preliminary VHF/UHF Radar Lineup Example 1 mw (0 dbm) 50 mw (17 dbm) 16 W (42 dbm) 1000 W (60 dbm) +18 db +25 db +18 db Pre-driver: MMG3014N Driver: MMRF1304N Final Stage 4 MMRF1306H Key Parameters Frequency: narrowband Unmatched for narrow or wideband operation Rugged > 65:1 VSWR 50 V LDMOS Integrated ESD protection
6 Freescale RF Military Solutions RF Military Power LDMOS Transistors: General Purpose, Radar and Communications Radar (continued) L-Band Radar /Freq. db/ MMRF1019NR4 I/O Peak 50 25/ PLD-1.5 MMRF1304LR5 U To Peak / NI MMRF1304NR1 U To CW / TO MMRF1304GNR1 U To CW / TO-270G-2 MMRF1305HR5 U To CW / NI-780H-4L MMRF1305HSR5 U To CW / NI-780S-4L MMRF1005HR5 I Peak / NI-780H-2L MMRF1005HSR5 I Peak / NI-780S-2L MMRF1008HR5 I/O Peak / NI-780H-2L MMRF1008HSR5 I/O Peak / NI-780S-2L MMRF1011HR5 I/O Peak 50 18/ NI-780H-2L MMRF1011HSR5 I/O Peak 50 18/ NI-780S-2L MMRF1009HR5 I/O Peak / NI-780H-2L MMRF1009HSR5 I/O Peak / NI-780S-2L MMRF1007HR5 I Peak 50 20/ NI-1230H-4S MMRF1007HSR5 I Peak 50 20/ NI-1230S-4S MMRF1317H* U Peak 50 18/ NI-1230H-4S MMRF1317HS* U Peak 50 18/ NI-1230S-4S S-Band Radar MMRF1013HR5 I/O Peak / NI-1230H-4S MMRF1013HSR5 I/O Peak / NI-1230S-4S * Preliminary L-Band Radar Lineup Example Key Parameters 1 mw (0 dbm) Pre-driver: MMG3014N 65 mw (18 dbm) +18 db +24 db Driver: MMRF1304N 20 W (43 dbm) +20 db Final Stage 4 MMRF1011H 1200 W (61 dbm) Frequency: GHz ( GHz more common) Power: Several kw required (high path loss compared to transponder operation) Pulse: Rise and fall time must be short, controlled and equal. Reduced droop of pulse amplitude. Transponder/Secondary Radar Lineup Example Key Parameters 2 mw (3 dbm) Pre-driver: MMG3014N 80 mw (19 dbm) +18 db +25 db Driver: MMRF1304N 25 W (44 dbm) Final Stage MMRF1317H +17 db 1300 W (61 dbm) Frequency: High Power: 1300 W P1dB Pulse: Rise and fall time must be short, controlled and equal. Reduced droop of pulse amplitude. 6
7 Freescale RF Military Solutions Radio Communications 28 Volt GaN /Freq. db/ MMRF5011N* I CW 28 13/ OM Volt GaN MMRF5014HR5 I CW 50 16/ NI-360H-2SB MMRF5015N* I CW 50 16/ OM Volt LDMOS MMRF1021NT1 U CW / PLD-1.5W 28 Volt LDMOS MMRF1024HS* I/O AVG / NI-1230S-4L2L MMRF1022HS* I/O AVG / NI-1230S-4L2L MMRF1023HS* I/O AVG / NI-1230S-4L2L MMRF1315NR1 I/O CW / TO Volt LDMOS MMRF1012NR1 U CW / TO MMRF1304LR5 U To Peak / NI MMRF1304NR1 U To CW / TO MMRF1304GNR1 U To CW / TO-270G-2 MMRF1305HR5 U To CW / NI-780H-4L MMRF1305HSR5 U To CW / NI-780S-4L MMRF1320N U CW / TO-270WB-4 MMRF1316NR1 I/O CW / TO-270WB-4 MMRF1310HR5 U To CW / NI-780H-4L MMRF1318NR1 U CW 50 22/ TO-270WB-4 MMRF1310HSR5 U To CW / NI-780S-4L MMRF1016HR5 U To Peak 50 25/ NI-1230H-4S MMRF1308HR5 U To CW / NI-1230H-4S MMRF1308HSR5 U To CW / NI-1230S-4S MMRF1306HR5 U CW / NI-1230H-4S MMRF1306HSR5 U CW / NI-1230S-4S * Preliminary Radio Communications Lineup Example Key Parameters 1 W (30 dbm) 10 W (40 dbm) 100 W (50 dbm) Frequency: Up to 2500 wideband Power: 100 W CW across multi-octave +10 db +12 db bandwidth, 200 to 2500 Driver: MMRF5011N Final Stage: MMRF5015N Thermal Resistance: The OM plastic package enables improved thermal resistance. freescale.com 7
8 Freescale RF Military Solutions RF Military Power LDMOS Transistors: General Purpose, Radar and Communications Radio Communications (continued) /Freq. db/ 50 Volt LDMOS MMRF1304LR5 U To Peak / NI MMRF1304NR1 U To CW / TO MMRF1304GNR1 U To CW / TO-270G-2 MMRF1018NR1 I CW / TO-270WB-4 MMRF1018NBR1 I CW / TO-272WB-4 MMRF1305HR5 U To CW / NI-780H-4L MMRF1305HSR5 U To CW / NI-780S-4L MMRF NR3 I AVG / OM-780-4L MMRF GNR3 I AVG / OM-780G-4L 8
9 Freescale RF Military Solutions RF Military Power Portfolio Power 1 kw MMRF1306H MMRF1006H MMRF1007H MMRF1317H Legend 28 V GaN 50 V GaN 50 V Rugged LDMOS 500 W MMRF1308H MMRF1009H 50 V LDMOS 28 or 32 V LDMOS 7.5 or 12.5 V LDMOS 250 W 100 W MMRF1310H MMRF5014H MMRF5015N MMRF1320N MMRF1318N MMRF1316N MMRF1305H MMRF1011H MMRF1008H MMRF1005H MMRF1311H MMRF N MMRF1022H MMRF1013H MMRF1023H MMRF1024H MMRF1315N MMRF1018N MMRF1017N MMRF2007N MMRF1304L/N MMRF2006N MMRF1012N MMRF1015N MMRF1019N MMRF1004N MMRF5011N MMRF1021N MMRF1014N MMRF2005N MMRF2004NB GHz 2 GHz 3 GHz Frequency Industry-Leading RF Military Power Packages Thermal performance leadership Package design Freescale s JEDEC-registered TO series is the only over-molded plastic package series specifically designed for high-power RF applications NI-1230H-4S NI-780S-4L OM Bolt down, clamp down and solder reflow mounting options Low thermal resistance flange material 225 C T J maximum operating temperature Power dissipation capabilities >1 kw In-package impedance matching Low Au solderable finish for improved reliability Plastic package with a larger contact area for optimal thermal performance NI-1230S-4S OM Manufacturing Automated high-volume assembly and test Multiple manufacturing locations Materials RoHS compliant Not to scale TO-270WB-4 OM freescale.com 9
10 Why Choose Freescale? Best-in-class RF performance Industry-leading package designs Consistent and repeatable RF performance Consistent high quality Proven long-term reliability High-volume manufacturing capability Assured long-term supply Comprehensive U.S. and Eurozone sales and design support Design Support For information on design support for RF military products, visit freescale.com/rfmilitary. Application-specific reference designs Test and evaluation fixtures Fully validated RF high-power models for Keysight ADS and AWR Microwave Office MTTF calculation programs 50 V RF LDMOS white paper and mounting application notes Thermal management application notes Sample/Buy For ordering and availability, contact your local Freescale sales office or Freescale authorized distributor.
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12 For more information, visit freescale.com/rfmilitary Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners Freescale Semiconductor, Inc. Document Number: BR1611 REV 3 5/2015
13 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Freescale Semiconductor: MMRF2005NR1 MMRF2007NR1
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280W GaN WIDE- BAND PULSED POWER AMPLI- FIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology
RF LDMOS Wideband Integrated Power Amplifiers
Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MMRF2010N is a 2--stage RFIC designed for IFF transponder applications operating from 10 to 1090 MHz. These devices are suitable for use
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 75 to
350 W, MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems. = 25 C) of Demonstration Amplifier
CGHV5935 35 W, 52-59 MHz, 5-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Cree s CGHV5935 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high
QPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.
Product Description The is a discrete GaN on SiC HEMT which operates from 3.4 3.8 GHz. The device is a single stage matched power amplifier transistor. The can be used in Doherty architecture for the final
MR2006C LDMOS TRANSISTOR
24W, 12.5V High Power RF LDMOS FETs Description The MR2006C is a 24-watt, Push-Pull configuration, unmatched LDMOS FETs, designed for ISM and Mobile radio applications with frequencies under 2GHz. It can
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Preliminary Data Document Number: Order from RF Marketing Rev. 1.0, 09/2017 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial,
RF Power GaN Transistor
Technical Data Document Number: A2G26H281--04S Rev. 0, 9/2016 RF Power GaN Transistor This 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring
RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace
RF Power GaN Transistor
Technical Data Document Number: A2G22S190--01S Rev. 0, 09/2018 RF Power GaN Transistor This 36 W RF power GaN transistor is designed for cellular base station applications covering the frequency range
Test Methodology. Characteristic Symbol Min Typ Max Unit. V GS(th) Vdc. V GS(Q) Vdc. V DS(on)
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from185 MHz to 1995 MHz.
QPA GHz 50 Watt GaN Amplifier
QPA1 2.8 3.2 GHz Watt GaN Amplifier Product Description Qorvo s QPA1 is a high-power, S-band amplifier fabricated on Qorvo s QGaN.um GaN on SiC production process. Covering 2.8-3.2 GHz, the QPA1 typically
Characteristic Symbol Value (2) Unit R JC 92.0 C/W
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input and output
Features. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
T1G FS 30W, 28V, DC 6 GHz, GaN RF Power Transistor
Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power
MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2
MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The
= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain
CMPA625F 25 W, 2 MHz-6 MHz, GaN MMIC Power Amplifier Cree s CMPA625F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally prematched and designed for a broad range
RF LDMOS Wideband Integrated Power Amplifiers
Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 96 MHz. This multi-stage structure
CGH80030D. 30 W, 8.0 GHz, GaN HEMT Die. 2-Way Private Radio. Broadband Amplifiers. Cellular Infrastructure. Test Instrumentation
CGH80030D 30 W, 8.0 GHz, GaN HEMT Die Cree s CGH80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT), based on Cree s 28V, 0.25um GaN-on-SiC process technology. GaN has superior properties
60 W, DC MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications. = 25 C) of Demonstration Amplifier
CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic
1011GN-1200V 1200 Watts 50 Volts 32us, 2% L-Band Avionics 1030/1090 MHz
GENERAL DESCRIPTION The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 db gain, 1200 Watts of pulsed RF output power at 32us,
TD-SCDMA and TDD-LTE Solution
TD-SCDMA and TDD-LTE Solution FTF-NET-F0479 Song Di China RF Application Manager Laurence Li China RF Marketing M A Y. 2 0 1 4 TM External Use Agenda TD-SCDMA and TDD-LTE Evolution Overview Solutions Recommendation
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers
QPD W, 48 V GHz GaN RF Power Transistor
Applications W-CDMA / LTE Macrocell Base Station, Band 1 and Band 3 Active Antenna General Purpose Applications 2 Lead NI400 Package Product Features Functional Block Diagram Operating Frequency Range:
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data Document Number: A2T27S2N Rev. 1, 1/218 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 2.5 W RF power LDMOS transistors are designed for cellular base station
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Typical Applications Low noise wideband
RF LDMOS Wideband Integrated Power Amplifiers
Technical Data Document Number: A2I09VD050N Rev. 0, 09/2018 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD050N wideband integrated circuit is designed with on--chip matching that makes it usable
transistor is available in a flange and pill package. Package Types: & PN s: CGH40045F & CGH40045P
Rev 4.0 - May 2015 CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail,
= 25 C) Note: Measured in CGHV96100F2-TB (838179) under 100 µs pulse width, 10% duty, Pin 42.0 dbm (16 W) Applications. Marine Radar.
CGHV96100F2 100 W, 8.4-9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN
CMOS 2.4GHZ ZIGBEE/ISM TRANSMIT/RECEIVE RFeIC
CMOS 2.4GHZ ZIGBEE/ISM TRANSMIT/RECEIVE RFeIC Description 17 1 2 3 4 TXRX VDD VDD D 16 15 14 13 12 11 10 ANT 9 The RFX2401C is a fully integrated, single-chip, single-die RFeIC (RF Front-end Integrated
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace
= 25 C), 50 V. Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units. Saturated Output Power W
CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide
RF LDMOS Wideband 2-Stage Power Amplifiers
Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance
Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier
RF LDMOS Wideband Integrated Power Amplifiers
Technical Data Document Number: A3I35D012WN Rev. 0, 11/2018 RF LDMOS Wideband Integrated Power Amplifiers The A3I35D012WN wideband integrated circuit is designed for cellular base station applications
Gate. Order codes Package Packing. November 2012 Doc ID Rev 1 1/18
RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet preliminary data Features Operating frequencies from 1 MHz to 1000 MHz P OUT > 50W with 12dB gain @ 870
= 25 C) Note: Measured at -30 dbc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.
CGHV965F1 5 W, 7.9-9.6 GHz, 5-ohm, Input/Output Matched GaN HEMT Cree s CGHV965F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz Suitable
= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain
CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).