Announcing Second-Generation Airfast RF Power Solutions
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1 Announcing Second-Generation Airfast RF Power Solutions A2T07D160W04S A2T07H310-24S A2I22D050N A2I25D012N A2T26H160-24S J u n e Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners Freescale Semiconductor, Inc.
2 RF High Power Cellular Application Areas Wireless network infrastructure markets such as: - Macrocell base stations - Small cell equipment such as femtocells, enterprise picocells, microcell base stations 2
3 Airfast Second-Generation Solutions Significant step forward in RF performance Portfolio includes VHVs (48 V LDMOS), ICs, Discretes and GaN Multi-band solutions Targeting 700 MHz to 3.5 GHz frequency band coverage Industry s best Doherty gain up to 22 db discrete gain up to 33 db IC gain Ground breaking LDMOS efficiency over 50% Packaging technology innovations higher integration, improved thermal performance Broadest portfolio of packages in air cavity and over-molded plastic 3
4 Cellular Market Space Challenges Capacity, data rates, subscribers Ever increasing need for data Smart devices increasing Internet traffic Reduce equipment size Smaller footprint to reduce installation costs Network infrastructure evolution Network infrastructure evolution from passive antennas to active antennas Reduced power consumption requirement (5G power consumption 90% less than 4G with 10x capacity) Multiple standards to support 2G/GSM/GPRS/EDGE UMTS/3G/TD-SCDMA TDD-LTE/FDD-LTE 4G / LTE-A Reduce CAPEX/OPEX Higher gain/higher efficiency Higher capacity/higher bandwidth requirement 4
5 Freescale Solutions: Airfast Second-Generation Products Features include High gain eliminates stages, reducing systems cost High efficiency allows use of smaller heatsinks and housings less heat leads to lower operational costs Multi-band solutions solutions at multiple frequency bands Packaging technology Improved isolation across the carrier and peaking side improving Doherty circuit performance Equivalent power in smaller footprint compared to previous generations Available in over-molded plastic packages and air cavity packages Enhanced customer solutions for faster time-to-market Announcing June 2014: A2T07D160W04S A2T07H310-24S A2I22D050N A2I25D012N A2T26H160-24S 5
6 RF Airfast Second-generation Product Details
7 Key Product Features: Airfast Second-Generation Discretes Designed for 28 V operation for cellular base station applications A2T07D160W04S A2T07H310-24S A2T26H160-24S 160 W dual path device 728 to 960 MHz Doherty performance: 52.5 dbm peak power 21.5 db gain 51% 7 db OBO NI-780S-4L Sampling now; Production Q W asymmetrical Doherty inpackage device 720 to 960 MHz Doherty performance: 55 dbm peak power 18.9 db gain 50% 8 db OBO NI-1230S-4L2L Sampling now; Production Q W asymmetrical Doherty inpackage device 2496 to 2690 MHz Doherty performance: 52.5 dbm peak power 15.7 db gain 47% 8 db OBO NI-780S-4L2L Sampling now; Production Q314 7
8 Key Product Features: Airfast Second-Generation ICs Designed for 28 V operation for cellular base station applications A2I22D050N/GN A2I25D012N/GN 50 W wideband integrated power amplifier 2000 to 2200 MHz Doherty performance: 49 dbm peak power 28 db gain 42% efficiency at 8 db OBO TO-270WB-15 Sampling now; production Q W wideband integrated power amplifier 2300 to 2690 MHz Doherty performance: 43.5 dbm peak power 29 db gain 41% efficiency at 8 db OBO TO-270WB-15 Sampling now; production Q314 8
9 RF RF Power Products Resources and Support Application notes Data sheets MTTF calculators,.s2p files Package index Product summary pages RF Power selector tool Models ADS and AWR compatible large-signal models in development Application Support Direct assistance available by Freescale RF applications team, via your local sales or distribution contact. Social Media Blogs & Twitter 9
10 Freescale Semiconductor, Inc. External Use
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