Announcing Second-Generation Airfast RF Power Solutions

Size: px
Start display at page:

Download "Announcing Second-Generation Airfast RF Power Solutions"

Transcription

1 Announcing Second-Generation Airfast RF Power Solutions A2T07D160W04S A2T07H310-24S A2I22D050N A2I25D012N A2T26H160-24S J u n e Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners Freescale Semiconductor, Inc.

2 RF High Power Cellular Application Areas Wireless network infrastructure markets such as: - Macrocell base stations - Small cell equipment such as femtocells, enterprise picocells, microcell base stations 2

3 Airfast Second-Generation Solutions Significant step forward in RF performance Portfolio includes VHVs (48 V LDMOS), ICs, Discretes and GaN Multi-band solutions Targeting 700 MHz to 3.5 GHz frequency band coverage Industry s best Doherty gain up to 22 db discrete gain up to 33 db IC gain Ground breaking LDMOS efficiency over 50% Packaging technology innovations higher integration, improved thermal performance Broadest portfolio of packages in air cavity and over-molded plastic 3

4 Cellular Market Space Challenges Capacity, data rates, subscribers Ever increasing need for data Smart devices increasing Internet traffic Reduce equipment size Smaller footprint to reduce installation costs Network infrastructure evolution Network infrastructure evolution from passive antennas to active antennas Reduced power consumption requirement (5G power consumption 90% less than 4G with 10x capacity) Multiple standards to support 2G/GSM/GPRS/EDGE UMTS/3G/TD-SCDMA TDD-LTE/FDD-LTE 4G / LTE-A Reduce CAPEX/OPEX Higher gain/higher efficiency Higher capacity/higher bandwidth requirement 4

5 Freescale Solutions: Airfast Second-Generation Products Features include High gain eliminates stages, reducing systems cost High efficiency allows use of smaller heatsinks and housings less heat leads to lower operational costs Multi-band solutions solutions at multiple frequency bands Packaging technology Improved isolation across the carrier and peaking side improving Doherty circuit performance Equivalent power in smaller footprint compared to previous generations Available in over-molded plastic packages and air cavity packages Enhanced customer solutions for faster time-to-market Announcing June 2014: A2T07D160W04S A2T07H310-24S A2I22D050N A2I25D012N A2T26H160-24S 5

6 RF Airfast Second-generation Product Details

7 Key Product Features: Airfast Second-Generation Discretes Designed for 28 V operation for cellular base station applications A2T07D160W04S A2T07H310-24S A2T26H160-24S 160 W dual path device 728 to 960 MHz Doherty performance: 52.5 dbm peak power 21.5 db gain 51% 7 db OBO NI-780S-4L Sampling now; Production Q W asymmetrical Doherty inpackage device 720 to 960 MHz Doherty performance: 55 dbm peak power 18.9 db gain 50% 8 db OBO NI-1230S-4L2L Sampling now; Production Q W asymmetrical Doherty inpackage device 2496 to 2690 MHz Doherty performance: 52.5 dbm peak power 15.7 db gain 47% 8 db OBO NI-780S-4L2L Sampling now; Production Q314 7

8 Key Product Features: Airfast Second-Generation ICs Designed for 28 V operation for cellular base station applications A2I22D050N/GN A2I25D012N/GN 50 W wideband integrated power amplifier 2000 to 2200 MHz Doherty performance: 49 dbm peak power 28 db gain 42% efficiency at 8 db OBO TO-270WB-15 Sampling now; production Q W wideband integrated power amplifier 2300 to 2690 MHz Doherty performance: 43.5 dbm peak power 29 db gain 41% efficiency at 8 db OBO TO-270WB-15 Sampling now; production Q314 8

9 RF RF Power Products Resources and Support Application notes Data sheets MTTF calculators,.s2p files Package index Product summary pages RF Power selector tool Models ADS and AWR compatible large-signal models in development Application Support Direct assistance available by Freescale RF applications team, via your local sales or distribution contact. Social Media Blogs & Twitter 9

10 Freescale Semiconductor, Inc. External Use

Freescale Airfast Mobile Radio

Freescale Airfast Mobile Radio Freescale Airfast Mobile Radio Announcing: AFT05MS006N Previously Announced: AFT09MS007N AFT09MS015N AFT05MS031N AFT09MS031N AFT09MP055N AFT05MP075N TM M a r c h. 2 0 1 4 Freescale and the Freescale logo

More information

Advances in Freescale Airfast RFICs Setting New Benchmarks in LDMOS for Macrocells through Small Cells

Advances in Freescale Airfast RFICs Setting New Benchmarks in LDMOS for Macrocells through Small Cells Freescale Semiconductor White Paper AIRFASTWBFWP Rev. 0, 5/2015 Advances in Freescale Airfast RFICs Setting New Benchmarks in LDMOS for Macrocells through Small Cells By: Margaret Szymanowski and Suhail

More information

FDD Solution Overview Including Airfast Gen 2 Product Introduction

FDD Solution Overview Including Airfast Gen 2 Product Introduction FDD Solution Overview Including Airfast Gen 2 Product Introduction FTF-NET-F0478 Suhail Agwani Product Line Manager, RF Cellular Products MAY.2014 TM External Use Agenda Freescale RF Introduction Airfast

More information

Freescale RF Solutions

Freescale RF Solutions Freescale RF Solutions EUF-IND-T0977 Yan Vainter J A N. 2 0 1 5 TM External Use Freescale Overview 17,000 employees 2013 revenue $4.19b Headquartered in Austin, TX 5 Business Groups Microcontrollers Automotive

More information

RF Solutions for Commercial Aerospace

RF Solutions for Commercial Aerospace RF Solutions for Commercial Aerospace freescale.com/rf RF Performance Freescale has developed an advanced portfolio of RF power solutions for use in avionics systems, L-Band radars and S-Band radars. Our

More information

Freescale. RF Military Solutions. Worldwide leader in RF power the best choice for defense applications. Featuring New GaN Devices

Freescale. RF Military Solutions. Worldwide leader in RF power the best choice for defense applications. Featuring New GaN Devices Freescale RF Military Solutions Worldwide leader in RF power the best choice for defense applications Featuring New GaN Devices freescale.com/rfmilitary Worldwide Industry Leader Freescale s RF power transistor

More information

TD-SCDMA and TDD-LTE Solution

TD-SCDMA and TDD-LTE Solution TD-SCDMA and TDD-LTE Solution FTF-NET-F0479 Song Di China RF Application Manager Laurence Li China RF Marketing M A Y. 2 0 1 4 TM External Use Agenda TD-SCDMA and TDD-LTE Evolution Overview Solutions Recommendation

More information

Freescale, the Freescale logo, AltiVec, C-5, CodeTEST, CodeWarrior, ColdFire, ColdFire+, C- Ware, the Energy Efficient Solutions logo, Kinetis,

Freescale, the Freescale logo, AltiVec, C-5, CodeTEST, CodeWarrior, ColdFire, ColdFire+, C- Ware, the Energy Efficient Solutions logo, Kinetis, Freescale, the Freescale logo, AltiVec, C-5, CodeTEST, CodeWarrior, ColdFire, ColdFire+, C- Ware, the Energy Efficient Solutions logo, Kinetis, mobilegt, PEG, PowerQUICC, Processor Expert, QorIQ, Qorivva,

More information

Small Cell, BTS PA Driver and Control and General-Purpose RF Products

Small Cell, BTS PA Driver and Control and General-Purpose RF Products Small Cell, BTS PA Driver and Control and General-Purpose RF Products FTF-NET-F0480 Mario Bokatius Product Line Manager M A Y. 2 0 1 4 TM External Use Agenda Freescale RF Introduction Cellular & Industrial

More information

RF is Everywhere - Expanding Leadership in Wireless Applications

RF is Everywhere - Expanding Leadership in Wireless Applications RF is Everywhere - Expanding Leadership in Wireless Applications FTF-IND-F0112 Leonard Pelletier Applications Support A P R. 2 0 1 4 TM External Use Agenda Freescale RF Innovations Core Competencies Expanding

More information

RF MILITARY MMRF2010N MMRF1312H MMRF1314H MMRF1317H HIGH POWER LDMOS AVIONICS DEVICES

RF MILITARY MMRF2010N MMRF1312H MMRF1314H MMRF1317H HIGH POWER LDMOS AVIONICS DEVICES RF MILITARY MMRF2010N MMRF1312H MMRF1314H MMRF1317H HIGH POWER LDMOS AVIONICS DEVICES APRIL 2016 NXP RF Military Overview NXP RF (formerly Freescale) is #1 in RF power for cellular infrastructure* Strong

More information

Prestta TM Standard Octa-Band Cellular Embedded Antenna 700/750/850/900/1800/1900/2100/2700 MHz

Prestta TM Standard Octa-Band Cellular Embedded Antenna 700/750/850/900/1800/1900/2100/2700 MHz PRODUCT: Cellular LTE Antenna Part No. 1002292 Prestta TM Standard Octa-Band Cellular Embedded Antenna 700/750/850/900/1800/1900/2100/2700 MHz KEY BENEFITS Ethertronics Prestta series of Isolated Magnetic

More information

The Doherty Power Amplifier 1936 to the Present Day

The Doherty Power Amplifier 1936 to the Present Day TH1-E1 The Doherty Power Amplifier 1936 to the Present Day Ray Pengelly, Prism Consulting NC, LLC Hillsborough, NC 27278 USA 1 Summary Early History Broadcast Transmitters Handset Transmitters Cellular

More information

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ9332B is a 2--stage, high linearity InGaP HBT broadband amplifier

More information

RF Power GaN Transistor

RF Power GaN Transistor Freescale Semiconductor Technical Data Document Number: A2G35S2--1S Rev., 5/216 RF Power GaN Transistor This 4 W RF power GaN transistor is designed for cellular base station applications requiring very

More information

Enhancement Mode phemt

Enhancement Mode phemt Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT--89 standard

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: A2V09H300--04N Rev. 0, 2/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 79 W asymmetrical Doherty RF power LDMOS

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: AFT2S15N Rev. 1, 11/213 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed

More information

5G deployment below 6 GHz

5G deployment below 6 GHz 5G deployment below 6 GHz Ubiquitous coverage for critical communication and massive IoT White Paper There has been much attention on the ability of new 5G radio to make use of high frequency spectrum,

More information

2020: The Ubiquitous Heterogeneous Network - Beyond 4G

2020: The Ubiquitous Heterogeneous Network - Beyond 4G 2020: The Ubiquitous Heterogeneous Network - Beyond 4G Rufus Andrew Managing Director: Nokia Siemens Networks SA ITU Kaleidoscope 2011 Cape Town, South Africa 1 Nokia Siemens Networks What will the world

More information

QPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.

QPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram. Product Description The is a discrete GaN on SiC HEMT which operates from 3.4 3.8 GHz. The device is a single stage matched power amplifier transistor. The can be used in Doherty architecture for the final

More information

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA312BV is a 2--stage high efficiency, Class AB InGaP HBT amplifier

More information

AirLink Antenna: 6-in-1 SharkFin

AirLink Antenna: 6-in-1 SharkFin AirLink Antenna Datasheet Sierra Wireless AirLink Antenna: 6-in-1 SharkFin EMBEDDED MODULES HL SERIES AirLink Antenna: 6-in-1 SharkFin Tested and certified to operate with AirLink routers and gateways,

More information

xbt The Infineon Advantage Advance LDMOS Technology Smart Discrete Package Manufacturing Rugged, Wideband Performance Leading-edge RF

xbt The Infineon Advantage Advance LDMOS Technology Smart Discrete Package Manufacturing Rugged, Wideband Performance Leading-edge RF Infineon RF Power LDMOS Product Roadmap June, 2012 The Infineon Advantage Advance LDMOS Technology Smart Discrete Package Rugged, Wideband Performance Manufacturing xbt Leading-edge RF Performance Highest

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: A2T18H16--24S Rev., 11/215 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 28 W asymmetrical Doherty RF power LDMOS transistor

More information

RF Power GaN Transistor

RF Power GaN Transistor Technical Data Document Number: A2G26H281--04S Rev. 0, 9/2016 RF Power GaN Transistor This 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: A2T26H300--24S Rev. 0, 9/2015 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 60 W asymmetrical Doherty RF power LDMOS transistor

More information

Infineon Supports LTE-A LNA Customers With Band-Specific Application Notes Generated With NI AWR Software

Infineon Supports LTE-A LNA Customers With Band-Specific Application Notes Generated With NI AWR Software Success Story Infineon Supports LTE-A LNA Customers With Band-Specific Application Notes Generated With NI AWR Software Company Profile Infineon Technologies AG is a German semiconductor manufacturer spin

More information

Enhancement Mode phemt

Enhancement Mode phemt Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) Low Noise Amplifier The MML25231H is a single--stage low noise amplifier (LNA) with active bias and high isolation for

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: A2T18H410--24S Rev. 0, 5/2015 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 71 W asymmetrical Doherty RF power LDMOS transistor

More information

International Microwave Symposium June 2013

International Microwave Symposium June 2013 International Microwave Symposium June 2013 1 1500+ customers 190+ products 50 countries 2 UltraCMOS Peregrine Semiconductor Unveils STeP8 UltraCMOS Process Technology Leadership Position in SOI Technology

More information

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers Technical Data Document Number: A2I09VD050N Rev. 0, 09/2018 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD050N wideband integrated circuit is designed with on--chip matching that makes it usable

More information

RF Power matters in the wireless world

RF Power matters in the wireless world Wireless Japan 2018 RF Power Innovative Integration www.innogration.net 1 One Stop RF Power Semiconductor Solution 2 Company Profile RF Power design and manufacturing house for semiconductor, device, module

More information

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor Technical Data Document Number: A2I2D4N Rev., 4/216 RF LDMOS Wideband Integrated ower Amplifiers The A2I2D4N wideband integrated circuit is designed with on--chip matching that

More information

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor Technical Data Document Number: A2I25D25N Rev., 3/215 RF LDMOS Wideband Integrated ower Amplifiers The A2I25D25N wideband integrated circuit is designed with on--chip matching that

More information

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 75 to

More information

A Product Development Flow for 5G/LTE Envelope Tracking Power Amplifiers, Part 2

A Product Development Flow for 5G/LTE Envelope Tracking Power Amplifiers, Part 2 Test & Measurement A Product Development Flow for 5G/LTE Envelope Tracking Power Amplifiers, Part 2 ET and DPD Enhance Efficiency and Linearity Figure 12: Simulated AM-AM and AM-PM response plots for a

More information

433MHz front-end with the SA601 or SA620

433MHz front-end with the SA601 or SA620 433MHz front-end with the SA60 or SA620 AN9502 Author: Rob Bouwer ABSTRACT Although designed for GHz, the SA60 and SA620 can also be used in the 433MHz ISM band. The SA60 performs amplification of the

More information

Testing Carrier Aggregation in LTE-Advanced Network Infrastructure

Testing Carrier Aggregation in LTE-Advanced Network Infrastructure TM500 Family White Paper December 2015 Testing Carrier Aggregation in LTE-Advanced Network Infrastructure Contents Introduction... Error! Bookmark not defined. Evolution to LTE-Advanced... 3 Bandwidths...

More information

Enhancement Mode phemt

Enhancement Mode phemt Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) Low Noise Amplifier The MML09212H is a 2--stage low noise amplifier (LNA) with active bias and high isolation for use

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: A2T2S6--2S Rev., 8/25 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 38 W RF power LDMOS transistor is designed for cellular

More information

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers Technical Data Document Number: A3I35D012WN Rev. 0, 11/2018 RF LDMOS Wideband Integrated Power Amplifiers The A3I35D012WN wideband integrated circuit is designed for cellular base station applications

More information

Enhancement Mode phemt

Enhancement Mode phemt Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) Low Noise Amplifier The MML09231H is a single--stage low noise amplifier (LNA) with active bias and high isolation for

More information

The EARTH Energy Efficiency Evaluation Framework (E 3 F):

The EARTH Energy Efficiency Evaluation Framework (E 3 F): The EARTH Energy Efficiency Evaluation Framework (E 3 F): A methodology to evaluate radio network energy efficiency at system level 1st ETSI TC EE workshop 20-21 June,, Genoa, Italy Magnus Olsson, Ericsson

More information

Test Methodology. Characteristic Symbol Min Typ Max Unit. V GS(th) Vdc. V GS(Q) Vdc. V DS(on)

Test Methodology. Characteristic Symbol Min Typ Max Unit. V GS(th) Vdc. V GS(Q) Vdc. V DS(on) Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from185 MHz to 1995 MHz.

More information

AirLink Antenna: High Gain Directional

AirLink Antenna: High Gain Directional AirLink Antenna Datasheet Sierra Wireless AirLink Antenna: High Gain Directional EMBEDDED MODULES HL SERIES AirLink Antenna: High Gain Directional Tested and certified to operate with AirLink routers and

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz.

More information

RF Products. Selector Guide. freescale.com/rf

RF Products. Selector Guide. freescale.com/rf RF Products Selector Guide freescale.com/rf RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the largest provider of RF power solutions for more than 30

More information

AirLink Antenna: 4-in-1 SharkFin

AirLink Antenna: 4-in-1 SharkFin AirLink Antenna Datasheet Sierra Wireless AirLink Antenna: 4-in-1 SharkFin EMBEDDED MODULES HL SERIES AirLink Antenna: 4-in-1 SharkFin Tested and certified to operate with AirLink routers and gateways,

More information

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MMRF2004NB wideband integrated circuit is designed with on--chip matching that makes it usable from 2300 to 2700

More information

Operated by Los Alamos National Security, LLC for the U.S. Department of Energy's NNSA

Operated by Los Alamos National Security, LLC for the U.S. Department of Energy's NNSA Operated by Los Alamos National Security, LLC for the U.S. Department of Energy's NNSA Distributed Architecture Brings Cellular Service to Hungry Customers This presentation will explore various solutions

More information

LTE Walk Test Measurements Using Consultix WTX-610 ILLuminator & Test Phones

LTE Walk Test Measurements Using Consultix WTX-610 ILLuminator & Test Phones LTE Walk Test Measurements Using Consultix WTX-610 ILLuminator & Test Phones Ultimate wireless coverage indoors is becoming a fundamental requirement of inbuilding infrastructure whether it s WiFi, cellular,

More information

Transcom Instruments. Product Brochure TRANSCOM INSTRUMENTS. Product Brochure

Transcom Instruments. Product Brochure TRANSCOM INSTRUMENTS. Product Brochure TRANSCOM INSTRUMENTS Product Brochure Transcom Instruments Product Brochure Micro-Tx Vector Signal Generator Module Overview Micro-Tx vector signal generator module is a high performance vector signal

More information

TD-SCDMA/TD-LTE RF PA Solutions

TD-SCDMA/TD-LTE RF PA Solutions August, 2009 TD-SCDMA/TD-LTE RF PA Solutions Scott Li ( 李成进 ) Agenda TD-SCDMA system and PA specification introduction TD-SCDMA PA market trend Freescale TD-SCDMA roadmap and solutions Typical TD PA solution

More information

RF LDMOS Wideband Integrated Power Amplifiers

RF LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated ower Amplifiers The A2I22D050N wideband integrated circuit is designed with on--chip matching that makes it usable from 1800 to 2200

More information

RF Power GaN Transistor

RF Power GaN Transistor Freescale Semiconductor Technical Data Document Number: AGS16--1S Rev., 5/15 RF ower GaN Transistor This 3 W RF power GaN transistor is designed for cellular base station applications covering the frequency

More information

2-20GHz, 12.5dB Gain Low-Noise Wideband Distributed Amplifier

2-20GHz, 12.5dB Gain Low-Noise Wideband Distributed Amplifier 2-20GHz, 12.5dB Gain Low-Noise Wideband Distributed Amplifier Features >16.5dBm P 1dB with 1.9dB NF and 12.5dB gain at 10GHz

More information

RF High Power GaN Portfolio GaN on Si and GaN on SiC

RF High Power GaN Portfolio GaN on Si and GaN on SiC GaN brochure_singles_080415_layout 1 8/4/15 6:23 PM Page 1 RF High Power GaN Portfolio GaN on Si and GaN on SiC www.macom.com www.macom.com GaN brochure_singles_080415_layout 1 8/4/15 6:23 PM Page 2 GaN

More information

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC22N wideband integrated circuit is designed with on--chip matching that makes it usable from 185 to 217 MHz.

More information

DC-22GHz, 16dB Gain Low-Noise Wideband Distributed Amplifier

DC-22GHz, 16dB Gain Low-Noise Wideband Distributed Amplifier DC-22GHz, 16dB Gain Low-Noise Wideband Distributed Amplifier Features Excellent combination of wide bandwidth, low noise and high associated gain 1.7dB NF with >15.5dB gain at 10GHz Output IP3 ~26-29dBm

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: AFT2S240--2S Rev. 0, 4/204 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 55 W RF power LDMOS transistor is designed for

More information

RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs

RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: AFT23S160W02S Rev. 0, 11/2013 RF ower LDMOS Transistors N Channel nhancement Mode Lateral MOSFTs These 45 watt RF power LDMOS transistors are designed

More information

RF1 RF2 RF3 RF4. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS

RF1 RF2 RF3 RF4. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS BROADBAND HIGH POWER SP4T SWITCH Package Style: QFN, 12-pin, 2.5mmx2.5mm Features 2kV HBM ESD Protection on All Ports Low Frequency to >2.7GHz Operation Low Insertion Loss: 0.4dB at 1GHz Very High Isolation:

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device

More information

SMALL CELL ANTENNA SOLUTIONS

SMALL CELL ANTENNA SOLUTIONS SMALL CELL ANTENNA SOLUTIONS YOUR INTRODUCTION TO PULSELARSEN PAYMENT TERMINAL ANTENNAS. Want to learn more? Visit our website at pulselarsenantennas.com Small Cell Solutions Pulse Electronics antenna

More information

Data and Computer Communications. Tenth Edition by William Stallings

Data and Computer Communications. Tenth Edition by William Stallings Data and Computer Communications Tenth Edition by William Stallings Data and Computer Communications, Tenth Edition by William Stallings, (c) Pearson Education - 2013 CHAPTER 10 Cellular Wireless Network

More information

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier

More information

65 V LDMOS INTRODUCTION

65 V LDMOS INTRODUCTION 65 V LDMOS INTRODUCTION Introduction NXP is announcing a new LDMOS technology using 65 V drain voltage, focused on ease of use. Higher voltage enables a higher RF output power with no compromise. The first

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: AFT21S220W02S Rev. 0, 2/2014 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 50 W RF power LDMOS transistors are designed

More information

Driver or Pre -driver General Purpose Amplifier

Driver or Pre -driver General Purpose Amplifier Freescale Semiconductor Technical Data Driver or Pre -driver General Purpose Amplifier The MMG30271B is a 1/2 W, Class AB, high gain amplifier designed as a driver or pre--driver for cellular base station

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: AFT3H16--5S Rev., 11/15 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 3 W asymmetrical Doherty RF power LDMOS transistor

More information

SEN366 (SEN374) (Introduction to) Computer Networks

SEN366 (SEN374) (Introduction to) Computer Networks SEN366 (SEN374) (Introduction to) Computer Networks Prof. Dr. Hasan Hüseyin BALIK (8 th Week) Cellular Wireless Network 8.Outline Principles of Cellular Networks Cellular Network Generations LTE-Advanced

More information

RF Power GaN Transistor

RF Power GaN Transistor Freescale Semiconductor Technical Data Document Number: A2G22S25--S Rev., 5/26 RF ower GaN Transistor This 48 W RF power GaN transistor is designed for cellular base station applications covering the frequency

More information

RF Power LDMOS Transistor N Channel Enhancement Mode Lateral MOSFET

RF Power LDMOS Transistor N Channel Enhancement Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: AFT23S170 13S Rev. 0, 6/2013 RF ower LDMOS Transistor N Channel nhancement Mode Lateral MOSFT This 45 watt RF power LDMOS transistor is designed

More information

RF Power GaN Transistor

RF Power GaN Transistor Technical Data Document Number: A2G22S190--01S Rev. 0, 09/2018 RF Power GaN Transistor This 36 W RF power GaN transistor is designed for cellular base station applications covering the frequency range

More information

Dynamic Dual Mode for ASTRO 25 Systems:

Dynamic Dual Mode for ASTRO 25 Systems: SOLUTION PAPER Dynamic Dual Mode for ASTRO 25 Systems: Greater Capacity and Seamless Interoperability with Project 25 Phase 1 New technology promises to boost the capacity of your radio communications

More information

UNIT- 3. Introduction. The cellular advantage. Cellular hierarchy

UNIT- 3. Introduction. The cellular advantage. Cellular hierarchy UNIT- 3 Introduction Capacity expansion techniques include the splitting or sectoring of cells and the overlay of smaller cell clusters over larger clusters as demand and technology increases. The cellular

More information

Characteristic Symbol Value (2) Unit R JC 92.0 C/W

Characteristic Symbol Value (2) Unit R JC 92.0 C/W Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input and output

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: A2T8S6W3S Rev., 5/25 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 32 W RF power LDMOS transistors are designed for

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: AFT21H35W3S Rev., 9/213 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 63 watt asymmetrical Doherty RF power LDMOS transistors

More information

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 136

More information

RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs

RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: AFT9H3 3S Rev., 9/23 RF ower LDMOS Transistors N Channel nhancement Mode Lateral MOSFTs These 56 watt asymmetrical Doherty RF power LDMOS transistors

More information

Data Sheet. ALM GHz GHz 50 Watt High Power SPDT Switch with LNA Module. Features. Description. Specifications.

Data Sheet. ALM GHz GHz 50 Watt High Power SPDT Switch with LNA Module. Features. Description. Specifications. ALM-12124 1.88 GHz 2.025 GHz 50 Watt High Power SPDT Switch with LNA Module Data Sheet Description Avago Technologies ALM-12124 is a multi-chip integrated module that comprise of a 50 Watt CW high power

More information

RF LDMOS Wideband Integrated Power Amplifier

RF LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor Technical Data Document Number: Rev. 0, 1/2016 RF LDMOS Wideband Integrated Power Amplifier The is a 2--stage, high gain amplifier designed to provide a high level of flexibility

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 50 W RF power LDMOS transistors are designed

More information

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: AFT26H160S4 Rev. 1, 11/2013 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 32 W asymmetrical Doherty RF power LDMOS transistor

More information

Low-power shared access to spectrum for mobile broadband Modelling parameters and assumptions Real Wireless Real Wireless Ltd.

Low-power shared access to spectrum for mobile broadband Modelling parameters and assumptions Real Wireless Real Wireless Ltd. Low-power shared access to spectrum for mobile broadband Modelling parameters and assumptions Real Wireless 2011 Real Wireless Ltd. Device parameters LTE UE Max Transmit Power dbm 23 Antenna Gain dbi 0

More information

RF1136 BROADBAND LOW POWER SP3T SWITCH

RF1136 BROADBAND LOW POWER SP3T SWITCH BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 db PCS Band 0.30 db High Isolation:

More information

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ9312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier

More information

Characteristic Symbol Value (2,3) Unit. Test Methodology

Characteristic Symbol Value (2,3) Unit. Test Methodology Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on--chip matching that makes it usable from 2110--2170 MHz.

More information

Datasheet. 5 GHz Carrier Backhaul Radio. Model: AF-5X. Up to 500+ Mbps Real Throughput, Up to 200+ km Range. Full-Band Certification including DFS

Datasheet. 5 GHz Carrier Backhaul Radio. Model: AF-5X. Up to 500+ Mbps Real Throughput, Up to 200+ km Range. Full-Band Certification including DFS 5 GHz Carrier Backhaul Radio Model: AF-5X Up to 500+ Mbps Real Throughput, Up to 200+ km Range Full-Band Certification including DFS Ubiquiti s INVICTUS Custom Silicon Overview Ubiquiti Networks continues

More information

Characteristic Symbol Value (2) Unit R JC 57 C/W

Characteristic Symbol Value (2) Unit R JC 57 C/W Freescale Semiconductor Technical Data BTS Driver Broadband Amplifier The is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal,

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: AFT26HW5S Rev. 2, 7/213 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 9 watt asymmetrical Doherty RF power LDMOS transistors

More information

RF8889A SP10T ANTENNA SWITCH MODULE

RF8889A SP10T ANTENNA SWITCH MODULE SP10T ANTENNA SWITCH MOD- ULE RF8889A SP10T ANTENNA SWITCH MODULE Package: QFN, 3.0mmx3.8mmx0.85mm GSM Rx1 RF8889A GSM Rx2 Features Broadband Performance Suitable for all Cellular Modulation Schemes up

More information

Silicon-Carbide High Efficiency 145 MHz Amplifier for Space Applications

Silicon-Carbide High Efficiency 145 MHz Amplifier for Space Applications Silicon-Carbide High Efficiency 145 MHz Amplifier for Space Applications By Marc Franco, N2UO 1 Introduction This paper describes a W high efficiency 145 MHz amplifier to be used in a spacecraft like AMSAT

More information

RFPA2013 Application Note

RFPA2013 Application Note AN RFMD APPLICATION NOTE RFPA1 Application Note Product Description The RFPA1 is a.w QFN package power amplifier specifically designed for Wireless Infrastructure applications. The RFPA1 is a single-stage

More information

Ericsson Radio Dot System

Ericsson Radio Dot System Ericsson Radio Dot System Redefining In-Building Small Cells As enterprises pursue mobile strategies and consumers depend more heavily on their mobile devices, cellular networks are becoming mission critical

More information

Affordable Design Techniques for Broadband DAS Expansion. Rand Skopas Dir. of Field Sales

Affordable Design Techniques for Broadband DAS Expansion. Rand Skopas Dir. of Field Sales Affordable Design Techniques for Broadband DAS Expansion Rand Skopas Dir. of Field Sales Agenda Challenges of frequency expansion in DAS systems Directional couplers and signal tappers DAS applications

More information

DC to 30GHz Broadband MMIC Low-Noise Amplifier

DC to 30GHz Broadband MMIC Low-Noise Amplifier DC to 30GHz Broadband MMIC Low-Noise Amplifier Features Low noise, ultra-flat gain 6-20GHz: 2.5dB NF, 18 ± 0.3dB gain Excellent 1.5-20GHz performance: Very flat gain (17 ± 0.6dB) High Psat at 20GHz (20dBm)

More information