RF Solutions for Commercial Aerospace
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- Rudolf Conley
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1 RF Solutions for Commercial Aerospace freescale.com/rf
2 RF Performance Freescale has developed an advanced portfolio of RF power solutions for use in avionics systems, L-Band radars and S-Band radars. Our latest-generation Airfast products for commercial aerospace pack more RF power in less space, reducing size and weight, and have better reliability and integration all of which help improve air traffic control and next-generation aircraft-to-aircraft communications. Recommended Solutions for Transponders and Secondary Radars Lineup for 2 W transponder (1090 MHz) 3 mw (4.6 dbm) 175 mw (22.4 dbm) db +32 db Pre-Driver: MMG20241H (24.5 dbm) Driver + Final Stage: AFIC10275N 275 W (54.4 dbm) Leveraging LDMOS LDMOS transistors provide higher thermal capabilities, gain and ruggedness than bipolar solutions. LDMOS enables more cost-effective systems than gallium nitride (GaN) while delivering similar performance in L-Band. As an example, the AFV121KH RF power transistor has more than 1 kw of power across the full DME MHz band. New Level of Integration The avionics industry s first RF power integrated circuit for 1090 MHz, AFIC10275N, integrates two amplification stages. The device also embeds RF sensing and temperature sensing capabilities, reducing the need for external components. This device is designed to work specifically with TCAS systems, ADS-B transponders and Mode S ELM interrogators. Worldwide Industry Leader Freescale s RF power transistor products enable the majority of the world s cellular voice and data traffic every day, in the harshest environments on earth, making Freescale the world s largest and most-deployed supplier of RF power technology. Lineup for 0 W transponder (1090 MHz) or DME ( MHz) 0.3 mw (-5 dbm) 20 mw (13 dbm) 5 W (37 dbm) +18 db +24 db +20 db Pre-Driver: MMG3H21N (19.3 dbm) Driver: MRF6V10010N (10 W) Final Stage: MRF6V120H 0 W (57 dbm) Lineup for 1 kw secondary radar (1030 MHz) or DME ( MHz) Typical Block Diagram 10 mw (9.8 dbm) 600 mw (27.8 dbm) 24 W (43.8 dbm) 1.2 kw (60.8 dbm) +18 db +16 db +17 db Receiver Pre-Driver: MMG3005N (30 dbm) Driver: MRFE6VS25GN (30 W) Final Stage: AFV121KH Pulse Modulation Duplexer Power Amplifier RF Source
3 Featured Product: AFIC10275N: 2 W, MHz AFIC10275N is a dual-stage integrated circuit with integrated sensors enabling much smaller and lighter power amplifiers for avionics transponders Featured Product: AFV121KH: > 1 kw MHz AFV121KH high power device for air traffic control higher power enables reduction of the number of transistors per system, reducing size and cost., POWER GAIN (db) 1090 MHz V DD = Vdc, Pulse 128 μsec, 10% Duty Cycle Output Power Gain (db) 2nd Stage Drain Efficiency (%) P in = 25 W V DD = Vdc, f = 1090 MHz I DQ1 = 80 ma, I DQ2 = 1 ma Pulse Width = 128 μsec Duty Cycle = 10% P in, INPUT POWER (WATTS) PEAK Power Gain, Drain Efficiency and Output Power versus Input Power , DRAIN EFFICIENCY (%), OUTPUT POWER (WATTS) PEAK, POWER GAIN (db) Typical wideband performance: V DD = Vdc, P in = 25 W, Pulse 128 μsec, 5% Duty Cycle Output Power Gain (db) Drain Efficiency (%) P in = 25 W 10 f, FREQUENCY V DD = Vdc Pulse Width = 128 μsec(on) Duty Cycle = 5% , DRAIN EFFICIENCY (%), OUTPUT POWER (WATTS) Power Gain, Drain Efficiency and Output Power versus Size: 1.97 x 2.76 (5.0 cm x 7.0 cm) Size: 3 x 4 (7.6 cm x 10.2 cm)
4 Recommended Products RF Power LDMOS Transistors Available Reference Circuits Product P1dB Freq. V DD (V) Package Options VSWR Warranted Minimum Longevity (1) Board Freq. Typical Application Pulse Gain (db) Eff. (%) Size Suggested Driver AFV121KH NEW* NI-1230H-4S NI-1230S-4S NI-1230GS-4L 20: DME ( cm) MRFE6VS25GN 1030 ADS-B ( cm) MRF6V120H : ADS-B or DME ( cm) MRF6V10010N or MRFE6VS25GN ADS-B or DME ( cm) 1030 ADS-B ( cm) MRF6V122H : ADS-B or DME ( cm) MRF6V10010N or MRFE6VS25GN ADS-B or DME ( cm) AFIC10275N NEW input matched TO-270WB-14 TO-270WBG-14 10: ADS-B x 2.76 (5.0 x 7.0 cm) MMG20241H MRF6V14300H : L-Band Radar x 6 (10.2 x 15 cm) MRFE6VS25GN MRF8P29300H NI-1230H-4S NI-1230S-4S 10: S-Band Radar ( cm) S-Band Radar (5.1 x 7.6 cm) A2I25D025N MRF6V3090N 90 MRFE6VS25L MRFE6VS25N/GN 25 MRF6V10010N input matched unmatched TO-270WB-4 TO-272WB-4 NI-360H-2L TO TO-270G-2 10: Wideband DME Driver (5.1 x 7.6 cm) MMG3006N 65: Wideband DME Driver ( cm) MMG3005N PLD Narrowband Driver ( cm) MMG3H21N 1. Freescale warranties the manufacturing availability of this product until the year indicated. After indicated year, the product will continue to be available until demand falls (Freescale Product Longevity Program). For VHF applications, refer to Freescale BR1593 ISM brochure. * Preliminary For additional information and orderable part numbers, refer to Freescale s RF Product selector guide: Output Power MRF6V120H H = Ceramic N = Plastic 6
5 RF Power Commercial Aerospace Portfolio Pulse Power RF Power Commercial Aerospace Packages Air Cavity Ceramic 1,000 MRFE6VP61K25N AFV121KH Legend V LDMOS Rugged NI-1230H-4S NI-1230S-4S NI-1230GS-4L V LDMOS V LDMOS MRFE6VP6600N MRF6V120H Plastic AFV121KH MRF8P29300H AFV121KHS MRF8P29300HS AFV121KGS 300 MRFE6VP5300N MRF6V122H MRF6V14300H MRF8P29300H NI-360H-2L MRFE6VP51N For VHF applications, refer to Freescale BR1593 ISM brochure. VOR VHF Radio AFIC10275N MRFE6VP100H MRF6V3090N MRFE6VS25L/25N MRF6V10010N Transponders MHz DME MHz L-Band Radar MHz S-Band Radar MHz MRF6V122H MRF6V120H MRF6V14300H MRF6V122HS MRF6V120HS MRF6V14300HS MRFE6VS25L Over-Molded Plastic TO-270WB-14 TO-270WBG-14 TO-270WB-4 TO-272WB-4 AFIC10275N AFIC10275GN MRF6V3090N MRF6V3090NB TO TO-270G-2 PLD-1.5 MRFE6VS25N MRFE6VS25GN MRF6V10010N Not to scale freescale.com 9
6 Reference Circuit Boards Notes AFIC10275N MHz MRF6V122H MHz 1.97 x 2.76 (5.0 cm x 7.0 cm) 2 x 3 (5.1 cm x 7.6 cm) MRF6V120H MHz AFV121KH MHz 2.2 x 3.2 (5.6 cm x 8.1 cm) 3 x 4 (7.6 cm x 10.2 cm) MRF6V14300H MHz MRF8P29300H MHz 4 x 6 (10.2 cm x 15 cm) 2 x 3 (5.1 cm x 7.6 cm) 10
7 For more information, visit freescale.com/rf Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners Freescale Semiconductor, Inc. Document Number: BR1608A4 REV 2 9/2015
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CMPA5259025F 25 W, 5200-5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers Cree s CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated
1011GN-1200V 1200 Watts 50 Volts 32us, 2% L-Band Avionics 1030/1090 MHz
GENERAL DESCRIPTION The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 db gain, 1200 Watts of pulsed RF output power at 32us,
RF Power GaN Transistor
Freescale Semiconductor Technical Data Document Number: A2G22S25--S Rev., 5/26 RF ower GaN Transistor This 48 W RF power GaN transistor is designed for cellular base station applications covering the frequency
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data Document Number: A2T8S6W3S Rev., 5/25 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 32 W RF power LDMOS transistors are designed for
ST W, 28 V RF Power LDMOS transistor from HF to 1.6 GHz. Datasheet. Features. Applications. Description
Datasheet 10 W, 28 V RF Power LDMOS transistor from HF to 1.6 GHz Features Order code F REQ V DD P OUT (typ.) Gain N D ST16060 930 MHz 28 V 12 W 21 db 63% MM High efficiency and linear gain operations
RF Power GaN Transistor
Technical Data Document Number: A2G22S190--01S Rev. 0, 09/2018 RF Power GaN Transistor This 36 W RF power GaN transistor is designed for cellular base station applications covering the frequency range
PRELIMINARY. Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units. Small Signal Gain db
CGH49PP 9 W, RF Power GaN HEMT PRELIMINARY Cree s CGH49PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH49PP, operating from a 28 volt rail, offers a general purpose,
Enhancement Mode phemt
Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT--89 standard
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data Document Number: AFT2S240--2S Rev. 0, 4/204 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 55 W RF power LDMOS transistor is designed for
1011GN-1600VG 1600 Watts 50/52 Volts 32us, 2% L-Band Avionics 1030/1090 MHz
GENERAL DESCRIPTION The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output
RF Power GaN Transistor
Technical Data Document Number: A2G26H281--04S Rev. 0, 9/2016 RF Power GaN Transistor This 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring
RF LDMOS Wideband Integrated Power Amplifiers
Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 96 MHz. This multi-stage structure
MR2006C LDMOS TRANSISTOR
24W, 12.5V High Power RF LDMOS FETs Description The MR2006C is a 24-watt, Push-Pull configuration, unmatched LDMOS FETs, designed for ISM and Mobile radio applications with frequencies under 2GHz. It can
0912GN-50LE/LEL/LEP 50 Watts 50 Volts 32us, 2% & MIDS MHz
E Class Earless Driver GaN Transistor Key Features 960-1215MHz 50W Pulsed Output Power 32µS-2% and MIDS Pulsing Common Source Class AB 50V Bias Voltage >60% Efficiency Across the Frequency Band under MIDS
Introducing the High Voltage Vertical Technology for High Power Applications
Introducing the High Voltage Vertical Technology for High Power Applications Brian D. Battaglia Applications Engineering HVVi Semiconductors Phoenix, AZ Page 1 AGENDA Background Device Overview Packaging
MAGX MAGX S
Features GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu) RoHS* Compliant +50V Typical Operation
RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs
Freescale Semiconductor Technical Data Document Number: AFT9H3 3S Rev., 9/23 RF ower LDMOS Transistors N Channel nhancement Mode Lateral MOSFTs These 56 watt asymmetrical Doherty RF power LDMOS transistors