ST W, 28 V RF Power LDMOS transistor from HF to 1.6 GHz. Datasheet. Features. Applications. Description

Transcription

1 Datasheet 10 W, 28 V RF Power LDMOS transistor from HF to 1.6 GHz Features Order code F REQ V DD P OUT (typ.) Gain N D ST MHz 28 V 12 W 21 db 63% MM High efficiency and linear gain operations Integrated ESD protection Large positive and negative gate / source voltage range In compliance with the 2002/95/EC European directive Applications Telecom and wideband communication Industrial, scientific and medical Avionics Description The ST16010 is a 10 W, 28 V LDMOS transistor designed for wideband radio, Avionics and ISM applications at frequencies up to 1.6 GHz. Product status link ST16010 Product summary Order code Marking Package ST16010 ST16010 MM DS Rev 2 - October 2018 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit BV DSS Drain-source voltage 90 V V GS Gate-source voltage -8 / +10 V V DD Drain voltage operating voltage 32 V T STG Storage temperature range -65 to +150 C T J Junction temperature +200 C Table 2. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case, T J = +200 C, DC test 3 C/W Table 3. ESD protection Symbol Parameter Class HBM Human body model (per JESD22-A114) 2 DS Rev 2 page 2/10

3 Electrical characteristics 2 Electrical characteristics (T C = 25 C unless otherwise specified). Table 4. Static (per side) Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero-gate voltage drain current V GS = 0 V, I D = 1 ma 90 V V GS = 0 V, V DS = 75 V 1 µa I GSS Gate-body leakage current V DS = 0 V, V GS = 10 V 250 na V GS(th) Gate threshold voltage V DS = 10 V, I D = 50 µa 2.1 V V DS(on) Static drain-source onresistance V GS = 1 V, I D = 0.1 A 0.11 V G fs Transconductance V DS = 10 V, I D = 1 A 1 S C iss Common source input capacitance 15 C oss Common source output capacitance V GS = 0 V, V DD = 28 V, F REQ = 1 MHz 5.7 pf C rss Common source feedback capacitance 0.4 Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit P OUT Output power V DD = 28 V, I DQ = 0.1 A, W Gain Efficiency Power gain Drain efficiency F REQ = 930 MHz, P in = W, PW = 10 µs, DC = 10% db % IMD3 3 rd order intermodulation - TBD - dbc VSWR Load P OUT = 10 W all phases - 20:1 - Table 6. Dynamic Frequency (MHz) Input impedance Z IN Drain load impedance Z DL TBD TBD DS Rev 2 page 3/10

4 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power gain and efficiency versus output power (f =930MHz, V DD = 28V, I DQ = 0.1A) Gain (db) GADG P Efficiency (%) 10 P TOT (W) Figure 2. Capacitances versus drain - source voltage C GIPG CVR (pf) C ISS C OSS 6 f = 1 MHz 4 2 C RSS V DS (V) Figure 3. Drain - source current versus gate - source voltage (V DS = 10V) I D (A) 3.5 GADG RID V GS (V) DS Rev 2 page 4/10

5 Test circuits 3 Test circuits Figure 4. Circuit layout DS Rev 2 page 5/10

6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark x0.16 2L gull wing MM package information Figure x0.16 2L gull wing MM package outline _A DS Rev 2 page 6/10

7 0.2x0.16 2L gull wing MM package information Table x0.16 2L gull wing MM package mechanical data Dim. mm Min. Typ. Max. A B C D E F G H I CH CH DS Rev 2 page 7/10

8 Revision history Table 8. Document revision history Date Version Changes 22-Jun Initial release. 11-Oct Updated features in cover page. DS Rev 2 page 8/10

9 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information x L gull wing MM package information...6 Revision history...8 DS Rev 2 page 9/10

10 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DS Rev 2 page 10/10