RF is Everywhere - Expanding Leadership in Wireless Applications

Size: px
Start display at page:

Download "RF is Everywhere - Expanding Leadership in Wireless Applications"

Transcription

1 RF is Everywhere - Expanding Leadership in Wireless Applications FTF-IND-F0112 Leonard Pelletier Applications Support A P R TM External Use

2 Agenda Freescale RF Innovations Core Competencies Expanding Leadership into Adjacent Opportunities What You Can Expect From Freescale RF Freescale RF GaAs MMIC Applications More Web Resources Conclusions External Use 1

3 Freescale is Five Business Groups Microcontrollers Automotive MCU Digital Networking Airfast MRF Analog & Sensors RF External Use 2

4 Freescale Innovation Timeline External Use 3

5 Freescale RF Early Innovations External Use 4

6 RF Worldwide Organization Freescale Seoul Marketing, Application Freescale Tokyo Marketing, Application Freescale Chengdu Design, Applications Freescale Austin Corporate Headquarters Oak Hill Fab 8 Freescale Kuala Lumpur Final Manufacturing Freescale Shanghai Marketing, Applications RF Global Headquarters Tempe, Arizona Design, Marketing, Applications, Modeling, Systems Freescale Toulouse Design, Marketing, Modeling, Applications, Systems Freescale Tianjin Final Manufacturing External Use 5

7 Freescale RF Leadership Freescale was the 1 st to qualify a SiGe HBT BiCMOS process in 2000: 350 nm and 180 nm Freescale was the 1 st to provide multi-stage integrated RF Power Amplifiers Pioneered Plastic Packaging for LDMOS Power Amplifiers 70% of mobile calls worldwide utilize Freescale technology/products Freescale owns 60% of global RF semiconductor device market Freescale breaks 1kW barrier with 50V LDMOS technology The largest global network of Application Engineers External Use 6

8 Freescale RF Core Strengths Semiconductor Technology Device Characterization and Modeling Packaging Technology Solutions Development Supply Chain Management Product Reliability Innovations in RF performance, power density, thermal management, manufacturability, and cost. IP in sophisticated load-pull capabilities and methods IP in semiconductor and package modeling: EM & Thermal Enabling cost-effective assembly and thermal dissipation, while maintaining leadership RF performance and reliability. System Integration Circuit Optimization Partial/Fully Engineered Solutions to specific requirements Unique optimizations enabling competitive differentiation Consistently ranked as a top-tier Record of Dependability: 95% on-time delivery Regarded as an Industry Benchmark Freescale was the 1 st to support hundreds of years MTBF External Use 7

9 Expanding Leadership Beyond Cellular Infrastructure External Use 8

10 RF Power Packages Metal-Ceramic Air Cavity Package Plastic TO Packages PQFN Package PLD1.5 Package OMNI Packages External Use 9

11 Freescale RF: 2 product lines serving 8 markets RF Cellular Cellular Power Amplifiers Base Stations Repeaters From GSM to LTE Small Signal RF Picocells Pre-drivers Novel PA components ISM (Industrial, Scientific, Medical) CO2 lasers Plasma generation MRI And a lot more Commercial Aerospace RF Industrial FM VHF TV UHF TV Broadcast Land Mobile Radio Distance Measuring Transponders L- and S-band Radars Heating Microwave Ovens, commercial & consumer Industrial heating Handheld Vehicle Base stations Military & Defense US only Radar Military Comms Radio Navigation External Use 10

12 Freescale MMIC Solutions Solutions Orientated Leadership in RF Performance Unparalleled Support Quality & Responsiveness You can expect: Direct access to RF Applications Support Proven Solutions for specific requirements Complete Characterization Data Simulation Models (s-parameters / noiseparameters Sample Kits External Use 11

13 Proven Turnkey Designs Reduce Design Cycle Times Fully Optimized Fully Characterized Turnkey Designs Start Your Designs Fully Implemented Designs External Use 12

14 Freescale Solution Sets: Small-Cell Power Amplifiers Femto Indoor Pico Outdoor Pico Micro PA Output Power: PA Output Power: PA Output Power: PA Output Power: dbm Avg dbm Avg dbm Avg dbm Avg. Required Line Up Gain: Required Line Up Gain: Required Line Up Gain: Required Line Up Gain: db db db db RF Final Stage Technology: RF Final Stage Technology: RF Final Stage Technology: RF Final Stage Technology: 3-5V GaAs 5V GaAs 12V GaAs or 28V LDMOS 28 V LDMOS 5V GaAs 1-2 stages 12V GaAs 1 stage 28V LDMOS 1 stage 3-5V GaAs 2-3 Stages 5V GaAs 2-3 Stages 5V GaAs 2-3 Stages 12V GaAs / 28V LDMOS 1 Stage OR Signal Conditioning and PA Control Systems Signal Conditioning and PA Control Systems Signal Conditioning and PA Control Systems Signal Conditioning and PA Control Systems No Linearization No Linearization Linearization Optional Linearization Optional External Use 13

15 PSC9131 Reference Design Board for Femtocell External Use 14

16 Where Do Linear PAs and LNAs Live? Air Interface: LTE FDD/TDD WCDMA (HSPA+) CDMA2K TD- SCDMA WiMAX LNA Linear PA QorIQ Qonverge PSC9131/9132 B48XX B48XX External Use 15

17 Device Technologies: RF Power Amplifiers External Use 16

18 LNA Device Technologies: OIP3 vs. NF External Use 17

19 Viable LNA Process Technologies LNAs better suited to high IP3, low NF applications LNAs better suited to low power, battery powered applications External Use 18

20 Pre-Driver Portfolio (General Purpose Amplifiers) Output Power (dbm, P1dB) 33 MMG3006N, 33 dbm, MHz, 17.5 db gain, QFN 4x4 31 MMG3005N, 30 dbm, MHz, 15 db gain, PQFN 5x MMG3004N, 27 dbm, MHz, 17 db gain, PQFN 5x5 MMG20271H/H9, 27.5 dbm, MHz, 16 db gain, QFN 3x3 / SOT MMG3014N, 25 dbm, MHz, 19.5 db gain, SOT 89 MMG20241H, 24dBm, MHz, 19dB gain, SOT-89 MMG15241H, 24 dbm, MHz, 15.9 db gain, SOT 89 MMH3111N, 22.5 dbm, MHz, 12 db gain, SOT 89 MMG3H21N, 20.5 dbm, MHz, 19.3 db gain, SOT 89 MMG3015N, 20.5 dbm, MHz, 15.5 db gain, SOT 89 MMG3012N, 18.5 dbm, MHz, 19 db gain, SOT MMG3007N, 16 dbm, MHz, 19 db gain, SOT Frequency (MHz) Production Execution External Use 19

21 RFMMIC Web Content MMIC Overview Performance Performance data Links to product summary pages Access to datasheets Cross Reference Comprehensive competitive analysis Selection guides Design Support Design tools Simulation models CAD files Reference design documents Application notes Evaluation boards External Use 20

22 GaAs MMIC Designer Kit and Solutions Binder Designer Kit and GaAs Solutions Binder are available online at freescale.com/rfmmic 5-10 loose samples of each device in anti-static canisters External Use 21

23 Support Resources Data Sheets and Application Notes: S-Parameters: Solutions Brochure: Cross Reference Samples and Kits: Factory Application Support: freescale.com/rfmmic freescale.com/rfmmic > Design Support freescale.com/files/rf_if/doc/brochure/br1609.pdf freescale.com/files/rf_if/doc/quick_ref_guide/mmic GPAQRG.pdf freescale.com/rfmmic External Use 22

24 More Information For more information on our GaAs portfolio, please visit our website at External Use 23

25 In Addition to the Small Signal Device Portfolio, Freescale Also has A Complete Line-Up of Power RF Devices External Use 24

26 Agenda 50V Advancements Enhanced Ruggedness Broadcast Applications Industrial, Scientific and Medical Applications Commercial Aerospace Applications Land Mobile Products Core Advantages Conclusions External Use 25

27 Freescale RF Power Products Market Focus Broadcast Commercial Aerospace Analog & Digital FM & TV HF/VHF Communication Equipment Shortwave Radio Air Traffic Management Transponder (ADS-B), DME Weather Radar Land Mobile Public Safety: Fire, Police Dispatch Security Marine VHF Industrial, Scientific, Medical (ISM) CO 2 Laser Plasma Generation Synchrotron Magnetic Resonance Imaging (MRI) External Use 26

28 Evolution of Freescale s 50V LDMOS Technology & Broadcast Extension of Rugged Device High Product Ruggedness Line to 2GHz Wideband EVHV6 is a 50V extension to Freescale s widely accepted 50V LDMOS technology Key technology tailor-made for the Broadcast, Industrial, Scientific, Medical (ISM) & Commercial Aerospace markets Performance levels exceed those of competitive products High gain and efficiency figures Low thermal resistance simplifies cooling needed by the transmitter High Ruggedness improves reliability under adverse conditions Higher power density means more power per device... fewer devices per system! Significant cost and board space savings May 2010: Freescale s latest innovation: Introducing 50V High Ruggedness Technology November 2010: Rugged, High Output Power Products: Up to 1250 W CW, 65:1 VSWR September 2011: Rugged, High Efficiency, High power UHF TV Broadcast: 600W Peak, 125W Avg 30% η d June 2012: Rugged Wideband : Widest frequency range LDMOS part available from Freescale today: Full rated power from <1 MHz to >1500 MHz MRFE6VS25 is for both 2-30 MHz and 1300 MHz MRFE6VP100 is MHz and 1300 MHz External Use 27

29 Freescale Ruggedness Differentiator What is Ruggedness? The ability to perform reliably into extreme operating conditions Measures of Ruggedness VSWR A ratio of the impedance mismatch between the device and it s operating load Energy Absorption (EA) measure of ability to absorb energy applied to the output terminal. Who needs it? Systems where normal operation is not into a matched load Laser driver Plasma generator Broadcast Communications System External Use 28

30 The Ideal Power Amplifier DC Power In Waste Heat (Power) Out External Use 29

31 Ruggedness Concept Device Load Matched Device and Load Impedances Mismatched Device and Load Impedances Reflected Power: The amount of reflected power is proportional to the impedance mismatch. External Use 30

32 Output Power Sub-1GHz, 50V Selector Guide MRF11K25 Output power (P1dB) Power 59 MRF11K W W MRF W W 49 MRF W MRFE6VP61K25H MRFE6VP8600H MRFE6VP61K25H MRFE6VP5600H MRF6VP3450H MRFE6VP8600H MRFE6VP5600H MRF5300 MRFE6VP6300H MRFE6VP3450H MRF6VP3450H MRF5300 MRFE6VP6300H MRF5150 MRFE6VP100H MRF6VP3091N MRFE6VP100H MRF6V3090N/VP3091N MRF6VP3091N AFV13350 AFV13350 MRF V LDMOS rugged 50V LDMOS Plastic W MRFE6VS25L/N MRFE6VS25L/N Frequency (MHz) Frequency (MHz) External Use 31

33 Freescale rugged E Series A breakthrough product line for the RF Industrial market Benefits in cost savings, reliability and performance have sparked an unprecedented response in the marketplace Dominate ISM and VHF Broadcast markets Major CO2 laser OEMs converted from VMOS Parameter Rugged E series X device Next Competitors Devices Which is best? Selection & Availability 6 devices now 2 devices now (same part, different #) VSWR 65:1 guaranteed 65:1 Typ Efficiency 230 MHz 225 MHz Thermal 10% lower than XR - Stability enhancements Extended ESD range Yes Yes No Yes External Use 32

34 ISM (Industrial, Scientific, Medical) External Use 33

35 Industrial, Scientific and Medical Applications RF Heating Wood dryer CO2 Laser RF Lighting Medical Food processing Scientific Instruments Atmospheric Radar Synchrotron External Use 34

36 RF Power 2-860MHz Industrial Portfolio External Use 35

37 150 available reference designs in Industrial for faster TTM External Use 36

38 Broadcast Products Product Portfolio External Use 37

39 RF Power Broadcast Portfolio External Use 38

40 Avionics External Use 39

41 RF Power MHz Band Portfolio External Use 40

42 Landmobile Products Product Portfolio External Use 41

43 Freescale Land Mobile Values Freescale is the leader in land mobile RF power, with long record of proven performance Full line of VHF and UHF devices from 4W to 75W All devices are >60% efficient at rated power, up to 70% mid band. Gains between 13dB and 17dB 65:1 VSWR Ruggedness Capability External Use 42

44 Landmobile Device Portfolio 7.5V devices 12.5V devices AFT05MP075 TO 272-WB-4 TO-270-WB-4 MRF8P8/9300H NI-1230 AFT09MP055N TO-270-WB-4 AFT05MS031N TO-270 AFT09MS031N TO-270 AFT09MS015N TO-270 AFT09MS007N PLD-1.5 W AFT05MS004N SOT-89 External Use 43

45 AFT05MS004N Applications: Mobile Radio Systems AFT05MS004N Designed for operation MHz 7.5Voperation 4W P1dB across MHz 3W P1dB MHz 3.6Voperation 4W CW Power Ideal for handheld radios Integrated ESD protection Characterized at 7.5V & 3.6V Reference Designs available >2W Psat across MHz Gain: 16 db nominal High efficiency: >60% broadband, >75% narrowband Extreme Ruggedness 65:1VSWR capable at 10.8V and 3dB overdrive Integrated ESD Protection Cost-effective Over-molded Plastic External Use 44

46 Proposed Product Line Up - Landmobile Radios UHF 35W Performance Targets Devices GPA AFT05MS031N Totals Typical Gain 29 db 20 db 50 db 12.5/13.6 V Mobile UHF Line Up 80W CW P1dB 0.35 W 35W 35 W Drain P1dB 71% 1-10mW 0-10dBm GPA MMZ09312 AFT05MP075N 80W UHF 80W Performance Targets Devices GPA MRF9MS4030N Totals Typical Gain 29 db 19 db 48 db High gain devices eliminate stage compared to previous designs CW P1dB 1W 80W 80 W Drain P1dB 70% MHz 35W Performance Targets Devices GPA AFT09MS031N Totals Typical Gain 29 db 16 db 45 db CW P1dB 0.4 W 35 W 35 W Drain P1dB 68% External Use 45

47 Freescale Advantages RF Performance Efficiency Simplified Thermal design High gain Simplifies lineup Linearity Broadband capability Reduce number of products Comprehensive Portfolio Industry leading performance Low cost options Ruggedness & Reliability Ruggedness Enhancement VSWR survival > 65:1 under overvoltage and input overdrive condition Thermal Characteristics Significant reduction in die junction temperature Stability enhancements No compromise in performance to assure stability Design Support Dedicated Applications Support ADS and AWR CAD Models Reference Designs Loadpull measurements Characterization for linearity Thermal Modeling External Use 46

48 Conclusions Freescale is the leader in RF power devices A broad range of devices for all RF applications All devices are the RF performance leaders in their specific designs External Use 47

49 THANK YOU Be A First With Us! TM Dec 2004: Motorola spins off Semiconductor Sector into independent company st Motorola Brand Car Radio st 2-Way Radio Equipment 1940 WWII Handie-Talkie st CRT TV 1969 Neil Armstrong st Portable Telephone st Cellular Phone st Digital Cellular (GSM) st WiFi Cable Modem Gateway RF FIRSTS 1st in RF power LDMOS 1st to develop industry standards in packaging 1st in high voltage IC 1st to support hundreds of years MTTF 1st high power discrete with integrated die matching 1st to offer manufacturing in standard, high-volume CMOS fabs 1st to install ESD protection on RF devices 1st with on-line production test data availability 1st with complete and accurate ADS MET modeling characterization 1st with a 500 MHz, 1 KW CW 50V LDMOS device, MRF6VP41K 1st with a High VSWR capable device, 65:1 VSWR 1st to brand high power RF Airfast 1st with an over-molded package in standard air cavity footprints External Use 48

50 Freescale Semiconductor, Inc. External Use

Freescale RF Solutions

Freescale RF Solutions Freescale RF Solutions EUF-IND-T0977 Yan Vainter J A N. 2 0 1 5 TM External Use Freescale Overview 17,000 employees 2013 revenue $4.19b Headquartered in Austin, TX 5 Business Groups Microcontrollers Automotive

More information

Small Cell, BTS PA Driver and Control and General-Purpose RF Products

Small Cell, BTS PA Driver and Control and General-Purpose RF Products Small Cell, BTS PA Driver and Control and General-Purpose RF Products FTF-NET-F0480 Mario Bokatius Product Line Manager M A Y. 2 0 1 4 TM External Use Agenda Freescale RF Introduction Cellular & Industrial

More information

Freescale, the Freescale logo, AltiVec, C-5, CodeTEST, CodeWarrior, ColdFire, ColdFire+, C- Ware, the Energy Efficient Solutions logo, Kinetis,

Freescale, the Freescale logo, AltiVec, C-5, CodeTEST, CodeWarrior, ColdFire, ColdFire+, C- Ware, the Energy Efficient Solutions logo, Kinetis, Freescale, the Freescale logo, AltiVec, C-5, CodeTEST, CodeWarrior, ColdFire, ColdFire+, C- Ware, the Energy Efficient Solutions logo, Kinetis, mobilegt, PEG, PowerQUICC, Processor Expert, QorIQ, Qorivva,

More information

Freescale. RF Military Solutions. Worldwide leader in RF power the best choice for defense applications. Featuring New GaN Devices

Freescale. RF Military Solutions. Worldwide leader in RF power the best choice for defense applications. Featuring New GaN Devices Freescale RF Military Solutions Worldwide leader in RF power the best choice for defense applications Featuring New GaN Devices freescale.com/rfmilitary Worldwide Industry Leader Freescale s RF power transistor

More information

RF Solutions for Commercial Aerospace

RF Solutions for Commercial Aerospace RF Solutions for Commercial Aerospace freescale.com/rf RF Performance Freescale has developed an advanced portfolio of RF power solutions for use in avionics systems, L-Band radars and S-Band radars. Our

More information

FDD Solution Overview Including Airfast Gen 2 Product Introduction

FDD Solution Overview Including Airfast Gen 2 Product Introduction FDD Solution Overview Including Airfast Gen 2 Product Introduction FTF-NET-F0478 Suhail Agwani Product Line Manager, RF Cellular Products MAY.2014 TM External Use Agenda Freescale RF Introduction Airfast

More information

65 V LDMOS INTRODUCTION

65 V LDMOS INTRODUCTION 65 V LDMOS INTRODUCTION Introduction NXP is announcing a new LDMOS technology using 65 V drain voltage, focused on ease of use. Higher voltage enables a higher RF output power with no compromise. The first

More information

TD-SCDMA and TDD-LTE Solution

TD-SCDMA and TDD-LTE Solution TD-SCDMA and TDD-LTE Solution FTF-NET-F0479 Song Di China RF Application Manager Laurence Li China RF Marketing M A Y. 2 0 1 4 TM External Use Agenda TD-SCDMA and TDD-LTE Evolution Overview Solutions Recommendation

More information

Freescale Airfast Mobile Radio

Freescale Airfast Mobile Radio Freescale Airfast Mobile Radio Announcing: AFT05MS006N Previously Announced: AFT09MS007N AFT09MS015N AFT05MS031N AFT09MS031N AFT09MP055N AFT05MP075N TM M a r c h. 2 0 1 4 Freescale and the Freescale logo

More information

RF MILITARY MMRF2010N MMRF1312H MMRF1314H MMRF1317H HIGH POWER LDMOS AVIONICS DEVICES

RF MILITARY MMRF2010N MMRF1312H MMRF1314H MMRF1317H HIGH POWER LDMOS AVIONICS DEVICES RF MILITARY MMRF2010N MMRF1312H MMRF1314H MMRF1317H HIGH POWER LDMOS AVIONICS DEVICES APRIL 2016 NXP RF Military Overview NXP RF (formerly Freescale) is #1 in RF power for cellular infrastructure* Strong

More information

Announcing Second-Generation Airfast RF Power Solutions

Announcing Second-Generation Airfast RF Power Solutions Announcing Second-Generation Airfast RF Power Solutions A2T07D160W04S A2T07H310-24S A2I22D050N A2I25D012N A2T26H160-24S J u n e. 2 0 1 4 Freescale and the Freescale logo are trademarks of Freescale Semiconductor,

More information

Advanced Technologies B.U. RF Power Presentation

Advanced Technologies B.U. RF Power Presentation Advanced Technologies B.U. RF Power Presentation Front-End & Back-end Overview 4 Catania Italy ISO9001/14001/16949 & EMAS certifications 6 high volume wafer fabs - Class 10 & 100 Product Management, Marketing,

More information

MMA051PP45 Datasheet. DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier

MMA051PP45 Datasheet. DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier MMA051PP45 Datasheet DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of

More information

RF Power matters in the wireless world

RF Power matters in the wireless world Wireless Japan 2018 RF Power Innovative Integration www.innogration.net 1 One Stop RF Power Semiconductor Solution 2 Company Profile RF Power design and manufacturing house for semiconductor, device, module

More information

RF Products. Selector Guide. freescale.com/rf

RF Products. Selector Guide. freescale.com/rf RF Products Selector Guide freescale.com/rf RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the largest provider of RF power solutions for more than 30

More information

50 V RF LDMOS: An Ideal RF Power Technology for ISM, Broadcast, and Radar Applications

50 V RF LDMOS: An Ideal RF Power Technology for ISM, Broadcast, and Radar Applications White Paper 50 V RF LDMOS: An Ideal RF Power Technology for ISM, Broadcast, and Radar Applications Pierre Piel, Wayne Burger, David Burdeaux, Warren Brakensiek Freescale Semiconductor www.freescale.com/rfpower

More information

Advances in Freescale Airfast RFICs Setting New Benchmarks in LDMOS for Macrocells through Small Cells

Advances in Freescale Airfast RFICs Setting New Benchmarks in LDMOS for Macrocells through Small Cells Freescale Semiconductor White Paper AIRFASTWBFWP Rev. 0, 5/2015 Advances in Freescale Airfast RFICs Setting New Benchmarks in LDMOS for Macrocells through Small Cells By: Margaret Szymanowski and Suhail

More information

RF High Power GaN Portfolio GaN on Si and GaN on SiC

RF High Power GaN Portfolio GaN on Si and GaN on SiC GaN brochure_singles_080415_layout 1 8/4/15 6:23 PM Page 1 RF High Power GaN Portfolio GaN on Si and GaN on SiC www.macom.com www.macom.com GaN brochure_singles_080415_layout 1 8/4/15 6:23 PM Page 2 GaN

More information

Product Description. GaAs HBT GaAs MESFET InGaP HBT

Product Description. GaAs HBT GaAs MESFET InGaP HBT Direct Quadrature Modulator RFMD0014 DIRECT QUADRATURE MODULATOR Package: QFN, 24-Pin, 4mm x 4mm Features ACPR Performance: -70 dbc Typ. for 1-Carrier WCDMA Very High Linearity: +26 dbm OIP3 Very Low Noise

More information

MAGX MAGX S

MAGX MAGX S Features GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu) RoHS* Compliant +50V Typical Operation

More information

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Preliminary Data Document Number: Order from RF Marketing Rev. 1.1, 09/2018 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness device is designed

More information

Rethinking The Role Of phemt Cascode Amplifiers In RF Design

Rethinking The Role Of phemt Cascode Amplifiers In RF Design Guest Column February 10, 2014 Rethinking The Role Of phemt Cascode Amplifiers In RF Design By Alan Ake, Skyworks Solutions, Inc. I consider myself fortunate that, as a fresh-out-of-school EE, I was able

More information

USER MANUAL HIGH INTERCEPT LOW NOISE AMPLIFIER (HILNA TM ) MODEL: HILNA CX

USER MANUAL HIGH INTERCEPT LOW NOISE AMPLIFIER (HILNA TM ) MODEL: HILNA CX USER MANUAL HIGH INTERCEPT LOW NOISE AMPLIFIER (HILNA TM ) MODEL: HILNA CX RF, Wireless, and Embedded Systems Engineering NUWAVES ENGINEERING 132 EDISON DRIVE. MIDDLETOWN, OHIO 45044 PH: 513-360-0800 FAX:

More information

USER MANUAL HIGH INTERCEPT LOW NOISE AMPLIFIER (HILNA TM ) MODEL NUMBER: HILNA LS

USER MANUAL HIGH INTERCEPT LOW NOISE AMPLIFIER (HILNA TM ) MODEL NUMBER: HILNA LS USER MANUAL HIGH INTERCEPT LOW NOISE AMPLIFIER (HILNA TM ) MODEL NUMBER: HILNA LS RF, Wireless, and Embedded Systems Engineering NUWAVES ENGINEERING 132 EDISON DRIVE. MIDDLETOWN, OHIO 45044 PH: 513 360

More information

xbt The Infineon Advantage Advance LDMOS Technology Smart Discrete Package Manufacturing Rugged, Wideband Performance Leading-edge RF

xbt The Infineon Advantage Advance LDMOS Technology Smart Discrete Package Manufacturing Rugged, Wideband Performance Leading-edge RF Infineon RF Power LDMOS Product Roadmap June, 2012 The Infineon Advantage Advance LDMOS Technology Smart Discrete Package Rugged, Wideband Performance Manufacturing xbt Leading-edge RF Performance Highest

More information

RPAM0510A. 470 ~ 960 MHz Broadband Ultra Linear Power Amplifier 1. Absolute Maximum Ratings 2 : Key Features: Electrical Specifications: (at +25 o C)

RPAM0510A. 470 ~ 960 MHz Broadband Ultra Linear Power Amplifier 1. Absolute Maximum Ratings 2 : Key Features: Electrical Specifications: (at +25 o C) 47 ~ 96 MHz Broadband Ultra Linear Power Amplifier 1 RPAM51A is a broadband, high power, and high linearity amplifier. The amplifier offers exceptional +. db gain flatness, 31 db gain, 35 dbm P1dB and

More information

Outstanding Noise Figure, measured in a 50 Ohm environment without any external matching

Outstanding Noise Figure, measured in a 50 Ohm environment without any external matching Low Noise, High IP3 Monolithic Amplifier 50Ω 0.05 to 4 GHz The Big Deal Ultra Low Noise Figure, 0.8 High IP3/Low Current, ma at +5V Wideband, up to 4 GHz CASE STYLE: CA1389 Product Overview Mini-Circuits

More information

VCC1 GND IN GND LOP LON GND GND. Product Description. GaAs HBT GaAs MESFET InGaP HBT

VCC1 GND IN GND LOP LON GND GND. Product Description. GaAs HBT GaAs MESFET InGaP HBT Direct Quadrature Modulator 145MHz to 27MHz RFMD214 DIRECT QUADRATURE MODULATOR 145MHz TO 27MHz Package: QFN, 24-Pin, 4mm x 4mm VCC1 IN IP 24 23 22 21 2 19 Features ACPR Performance: -7dBc Typ. for 1-Carrier

More information

NLB-310. Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz

NLB-310. Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz NLB-310 The NLB-310 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification

More information

The Doherty Power Amplifier 1936 to the Present Day

The Doherty Power Amplifier 1936 to the Present Day TH1-E1 The Doherty Power Amplifier 1936 to the Present Day Ray Pengelly, Prism Consulting NC, LLC Hillsborough, NC 27278 USA 1 Summary Early History Broadcast Transmitters Handset Transmitters Cellular

More information

Monolithic Amplifier CMA-84+ Wideband, High Dynamic Range, Ceramic. DC to 7 GHz. The Big Deal

Monolithic Amplifier CMA-84+ Wideband, High Dynamic Range, Ceramic. DC to 7 GHz. The Big Deal Wideband, High Dynamic Range, Ceramic Monolithic Amplifier 50Ω DC to 7 GHz The Big Deal Ceramic, hermetically sealed, nitrogen filled Low profile case, 0.045 High IP3, +38 dbm High Gain, 24 db High POUT,

More information

Gallium Nitride (GaN) Technology & Product Development

Gallium Nitride (GaN) Technology & Product Development Gallium Nitride (GaN) Technology & Product Development IEEE IMS / MTT-S 2012 Montreal, Canada GaN A New Enabling Technology Five times faster, higher frequency, faster on-chip logic Five times more power,

More information

RF V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER

RF V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER 3.3V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER Package Style: SOT 5-Lead Features Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Single 2.7V to 5.0V Power Supply 0.4GHz to

More information

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications

More information

Continuous Wave SSPAs. Version 1.6

Continuous Wave SSPAs. Version 1.6 Continuous Wave SSPAs Version 1.6 Date: Jun 1, 2015 CONTENT Product Overview... 3 FACTS ON THE TECHNOLOGY... 4 SOLID-STATE POWER AMPLIFIERS... 5 ABOUT NANOWAVE... 8 RF Components and Subsystems NANOWAVE

More information

Features. = +25 C, Vdd = +10 V, Idd = 350 ma

Features. = +25 C, Vdd = +10 V, Idd = 350 ma HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High

More information

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.

More information

Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc.

Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc. February 2014 Low Noise Amplifier Design Methodology Summary By Ambarish Roy, Skyworks Solutions, Inc. Low Noise Amplifiers (LNAs) amplify weak signals received by the antenna in communication systems.

More information

MRF173. The RF MOSFET Line 80W, 175MHz, 28V. M/A-COM Products Released - Rev Product Image

MRF173. The RF MOSFET Line 80W, 175MHz, 28V. M/A-COM Products Released - Rev Product Image Designed for broadband commercial and military applications up to 200 MHz frequency range. The high power, high gain and broadband performance of this device make possible solid state transmitters for

More information

NLB-310. RoHS Compliant & Pb-Free Product. Typical Applications

NLB-310. RoHS Compliant & Pb-Free Product. Typical Applications Typical Applications Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers 0 RoHS Compliant & Pb-Free Product NLB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO

More information

Modern FM Transmission Technologies

Modern FM Transmission Technologies Modern FM Transmission Technologies An Application using Harris Flexiva Line of Solid-State FM Amplifiers March 30, 2010 Featuring GatesAir s Rich Redmond Chief Product Officer Copyright 2015 GatesAir,

More information

RLAS0510A. 500 ~ 1000 MHz Super Low Noise Amplifier 1. Key Features: Absolute Maximum Ratings 3 : Electrical Specifications: (at room temperature)

RLAS0510A. 500 ~ 1000 MHz Super Low Noise Amplifier 1. Key Features: Absolute Maximum Ratings 3 : Electrical Specifications: (at room temperature) 5 ~ MHz Super Low Noise Amplifier 1 RLAS5A is an ultra low noise figure, wideband, and unconditionally stable SMT packaged amplifier with exceptionally low input and output VSWR. The amplifier offers a

More information

T/R Modules. Version 1.0

T/R Modules. Version 1.0 T/R Modules Version 1.0 Date: Jun 1, 2015 CONTENT Product Overview... 3 FACTS ON THE TECHNOLOGY... 4 ABOUT NANOWAVE... 6 RF Components and Subsystems NANOWAVE Technologies Inc. is a privately owned Canadian

More information

SGL0363Z. 5MHz to 2000MHz Low Noise Amplifier. Germanium. Simplified Device Schematic. Vpc. Narrow-band Matching Network. Gnd

SGL0363Z. 5MHz to 2000MHz Low Noise Amplifier. Germanium. Simplified Device Schematic. Vpc. Narrow-band Matching Network. Gnd 5MHz to MHz Low Noise Amplifier Silicon Germanium 5MHz to MHz LOW NOISE AMPLIFIER SILICON GERMANIUM Package: SOT-363 Product Description RFMD s is a low power, low noise amplifier. It is designed for.7v

More information

REAL Solid State Power at VHF / UHF

REAL Solid State Power at VHF / UHF REAL Solid State Power at VHF / UHF Barry Malowanchuk VE4MA Microwave Update Conference, October 2012 1 REAL Solid State Power at VHF/ UHF New Power Transistor Technology Replacements for 2 x 4CX250 s

More information

GHz SUPER LOW NOISE PACKAGED AMPLIFIER WHM0510AE 1

GHz SUPER LOW NOISE PACKAGED AMPLIFIER WHM0510AE 1 .5-1. GHz SUPER LOW NOISE PACKAGED AMPLIFIER WHM51AE 1 WHM51AE LNA is a super low noise figure, wideband, and high linear amplifier. The amplifier offers.4 db exceptional low noise figure, 38. db gain,

More information

RF3375 GENERAL PURPOSE AMPLIFIER

RF3375 GENERAL PURPOSE AMPLIFIER Basestation Applications Broadband, Low-Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low-Power Applications High Reliability Applications RF3375General Purpose

More information

CMOS 5GHz WLAN ac RFeIC WITH PA, LNA AND SPDT

CMOS 5GHz WLAN ac RFeIC WITH PA, LNA AND SPDT CMOS 5GHz WLAN 802.11ac RFeIC WITH PA, LNA AND SPDT RX LEN 16 RXEN ANT 15 14 13 12 11 Description RFX8051 is a highly integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit) which incorporates

More information

Ultra Low Noise MMIC Amplifier

Ultra Low Noise MMIC Amplifier Ultra Low Noise MMIC Amplifier 50Ω 0.05 to 6 GHz The Big Deal Ultra Low Noise Figure, 0.6 High IP3/Low Current, 30mA Wideband, up to 6 GHz 3mm x 3mm MCLP (EIA: QFN) Pkg Product Overview Mini-Circuits is

More information

Smart Energy Solutions for the Wireless Home

Smart Energy Solutions for the Wireless Home Smart Energy Solutions for the Wireless Home Advanced Metering Infrastructure (AMI) ZigBee (IEEE 802.15.4) Wireless Local Area Networks (WLAN) Industrial and Home Control Plug-in Hybrid Electric Vehicles

More information

DC-20 GHz Distributed Driver Amplifier. Parameter Min Typ Max Min Typ Max Units

DC-20 GHz Distributed Driver Amplifier. Parameter Min Typ Max Min Typ Max Units 7-3 RF-LAMBDA DC-20 GHz Distributed Driver Amplifier Electrical Specifications, T A =25 Features Ultra wideband performance Positive gain slope High output power Low noise figure Microwave radio and VSAT

More information

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage MBD128. BGA2709 MMIC wideband amplifier. Preliminary specification 2002 Jan 31

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage MBD128. BGA2709 MMIC wideband amplifier. Preliminary specification 2002 Jan 31 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 22 Jan 31 FEATURES Internally matched to 5 Ω Very wide frequency range (3.6 GHz at 3 db bandwidth) Flat 23 db gain (DC to 2.6 GHz at 1 db flatness)

More information

MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2

MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2 MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The

More information

Dual Matched MMIC Amplifier

Dual Matched MMIC Amplifier Surface Mount Dual Matched MMIC Amplifier 50Ω DC to 5.2 GHz The Big Deal Gain, 14.1 db typ. at 2 GHz Dual matched amplifier for push-pull & balanced amplifiers High dynamic range CASE STYLE: JV2579 Product

More information

RFG1M MHZ to 1000MHZ 180W GaN RFG1M MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced

RFG1M MHZ to 1000MHZ 180W GaN RFG1M MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink

More information

DC to 30GHz Broadband MMIC Low-Power Amplifier

DC to 30GHz Broadband MMIC Low-Power Amplifier DC to 30GHz Broadband MMIC Low-Power Amplifier Features Very low power dissipation: 4.5V, 85mA (383mW) High drain efficiency (43dBm/W) Good 1.5-20GHz performance: Flat gain (11 ± 0.75dB) 16.5dBm Psat,

More information

RDA1005L DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50 MHZ TO 4000 MHZ, 6 BIT

RDA1005L DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50 MHZ TO 4000 MHZ, 6 BIT Digital Controlled Variable Gain Amplifier 50 MHz to 4000 MHz, 6 Bit RDA1005L DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50 MHZ TO 4000 MHZ, 6 BIT Package: MCM, 32-Pin, 5.2 mm x 5.2 mm Features Broadband

More information

DC to 30GHz Broadband MMIC Low-Noise Amplifier

DC to 30GHz Broadband MMIC Low-Noise Amplifier DC to 30GHz Broadband MMIC Low-Noise Amplifier Features Low noise, ultra-flat gain 6-20GHz: 2.5dB NF, 18 ± 0.3dB gain Excellent 1.5-20GHz performance: Very flat gain (17 ± 0.6dB) High Psat at 20GHz (20dBm)

More information

Gain and Return Loss vs Frequency. s22. Frequency (GHz)

Gain and Return Loss vs Frequency. s22. Frequency (GHz) SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description RFMD s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington

More information

Monolithic Amplifier CMA-103+ Ultra Linear Low Noise, Ceramic to 4 GHz

Monolithic Amplifier CMA-103+ Ultra Linear Low Noise, Ceramic to 4 GHz Ultra Linear Low Noise, Ceramic Monolithic Amplifier 50Ω 0.05 to 4 GHz The Big Deal Ceramic, hermetically sealed, nitrogen filled Low profile case, 0.045 Ultra High IP3 Broadband High Dynamic Range CASE

More information

Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 39 ma Operational Voltage

Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 39 ma Operational Voltage 60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = db at 2GHz

More information

400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324

400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FEATURES Operation from MHz to MHz Gain of 14.6 db at 21 MHz OIP of 4.1 dbm at 21 MHz P1dB of 29.1 dbm at 21 MHz Noise figure of.8 db Dynamically adjustable bias Adjustable power supply bias:.

More information

150W Solid State Broadband EMC Benchtop Power Amplifier 6-18GHz. Parameter Min Typ Max Min Typ Max Units

150W Solid State Broadband EMC Benchtop Power Amplifier 6-18GHz. Parameter Min Typ Max Min Typ Max Units 7-3 RF-LAMBDA 150W Solid State Broadband EMC Benchtop Power Amplifier 6-18GHz Electrical Specifications, T A =25 Voltage = 110v/220v AC Features High Saturated Output Power 50~52dBm. Telecom Infrastructure

More information

High Performance RF for the Most Demanding Applications

High Performance RF for the Most Demanding Applications High Performance RF for the Most Demanding Applications Infrastructure, Broadcast, Mil/Aero, Satellite, ISM About NXP in High Performance RF Our History, People and Culture You may know NXP from our roots.

More information

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX High Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz The Big Deal High Gain Broadband High Dynamic Range without external Matching Components May be used as a replacement to RFMD SBB5089Z a,b SOT-89

More information

RFVA1017 ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER

RFVA1017 ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Analog Controlled Variable Gain Amplifier RFVA1017 ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mm x 7mm VCTRL 8 Features 1425MHz to 1550MHz Operation Gain = 27dB Typical Gain Adjustment Range

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, aerospace and defense,

More information

Ultra Wide Band Low Noise Amplifier GHz. Electrical Specifications, TA = +25⁰C, With Vg= -5V, Vcc = +4V ~ +7V, 50 Ohm System

Ultra Wide Band Low Noise Amplifier GHz. Electrical Specifications, TA = +25⁰C, With Vg= -5V, Vcc = +4V ~ +7V, 50 Ohm System Ultra Wide Band Low Noise Amplifier 0.5 46GHz Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.5 20 20 46 GHz Gain 13 13 db Gain Variation Over Temperature (-45 ~ +85) ±3 ±2 db Noise Figure

More information

Mobile Communications. Edition 2009

Mobile Communications. Edition 2009 Mobile Communications Edition 2009 Solutions for Mobile Communications Solutions for Mobile Communications Your partner for connectivity solutions Your partner for connectivity solutions HUBER+SUHNER is

More information

Enhancement Mode phemt

Enhancement Mode phemt Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT--89 standard

More information

20W Solid State Power Amplifier 26.2GHz~34GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz.

20W Solid State Power Amplifier 26.2GHz~34GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz. 20W Solid State Power Amplifier 26.2GHz~34GHz Features Wideband Solid State Power Amplifier Gain: 65dB Typical Psat: +43dBm Typical Supply : +24V Electrical Specifications, T A = +25⁰C, Vcc = +24V Typical

More information

GaN Power Amplifiers for Next- Generation Wireless Communications

GaN Power Amplifiers for Next- Generation Wireless Communications GaN Power Amplifiers for Next- Generation Wireless Communications Jennifer Kitchen Arizona State University Students: Ruhul Hasin, Mahdi Javid, Soroush Moallemi, Shishir Shukla, Rick Welker Wireless Communications

More information

2-20GHz, 12.5dB Gain Low-Noise Wideband Distributed Amplifier

2-20GHz, 12.5dB Gain Low-Noise Wideband Distributed Amplifier 2-20GHz, 12.5dB Gain Low-Noise Wideband Distributed Amplifier Features >16.5dBm P 1dB with 1.9dB NF and 12.5dB gain at 10GHz

More information

EVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifier. Pin Configuration/Functional Diagram/Typical Application Circuit MAX2659 BIAS

EVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifier. Pin Configuration/Functional Diagram/Typical Application Circuit MAX2659 BIAS 19-797; Rev 4; 8/11 EVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifier General Description The high-gain, low-noise amplifier (LNA) is designed for GPS, Galileo, and GLONASS applications. Designed in

More information

HMC639ST89 / 639ST89E

HMC639ST89 / 639ST89E v3.1 HMC63ST / 63STE AMPLIFIER,.2-4. GHz Typical Applications The HMC63ST(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Features

More information

Stephen Plumb National Instruments

Stephen Plumb National Instruments RF and Microwave Test and Design Roadshow Cape Town and Midrand October 2014 Stephen Plumb National Instruments Our Mission We equip engineers and scientists with tools that accelerate productivity, innovation,

More information

NDA-310-D 4 GENERAL PURPOSE. Gain Stage or Driver Amplifiers for MWRadio/Optical Designs

NDA-310-D 4 GENERAL PURPOSE. Gain Stage or Driver Amplifiers for MWRadio/Optical Designs 7\SLFDO$SSOLFDWLRQV Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers 3URGXFW'HVFULSWLRQ The NDA-310-D GaInP/GaAs HBT MMIC distributed amplifier is a low-cost,

More information

RF Subsytems & Components.

RF Subsytems & Components. RF Subsytems & Components wwwtroncomtr Page 2/13 Tron Elektronik AS benefits from the experience gained for more than 20 years in design and production of Broadband CATV network products Tron Elektronik

More information

Parameter Min. Typ. Max. Units. Frequency Range 8-11 GHz. Saturated Output Power (Psat) 52 dbm. Input Max Power (No Damage) Psat Gain dbm

Parameter Min. Typ. Max. Units. Frequency Range 8-11 GHz. Saturated Output Power (Psat) 52 dbm. Input Max Power (No Damage) Psat Gain dbm 150W Solid State EMC Benchtop Power Amplifier 8GHz~11GHz Electrical Specifications, T A =25 Features Automatic Calibration Built in Temperature Compensation Adjustable Attenuation: 31.5dB Range, 0.5dB

More information

CMOS 5GHz WLAN ac RFeIC WITH PA, LNA AND SPDT

CMOS 5GHz WLAN ac RFeIC WITH PA, LNA AND SPDT CMOS 5GHz WLAN 802.11ac RFeIC WITH PA, LNA AND SPDT RX LEN 16 RXEN ANT 15 14 13 12 11 Description RFX8051B is a highly integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit) which

More information

RFPA2013 Application Note

RFPA2013 Application Note AN RFMD APPLICATION NOTE RFPA1 Application Note Product Description The RFPA1 is a.w QFN package power amplifier specifically designed for Wireless Infrastructure applications. The RFPA1 is a single-stage

More information

Monolithic Amplifier CMA-81+ Wideband, High Dynamic Range, Ceramic. DC to 6 GHz. The Big Deal

Monolithic Amplifier CMA-81+ Wideband, High Dynamic Range, Ceramic. DC to 6 GHz. The Big Deal Wideband, High Dynamic Range, Ceramic Monolithic Amplifier 50Ω DC to 6 GHz The Big Deal Ceramic, hermetically sealed, nitrogen filled Low profile case, 0.045 High IP3, +38 m High POUT, +19.5 m CASE STYLE:

More information

GHz Packaged HPA. GaAs Monolithic Microwave IC in SMD leadless package. Output power (dbm)

GHz Packaged HPA. GaAs Monolithic Microwave IC in SMD leadless package. Output power (dbm) Output power (dbm) G Description GaAs Monolithic Microwave IC in SMD leadless package The is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a

More information

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX Flat Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz The Big Deal Ultra Flat Gain Broadband High Dynamic Range without external Matching Components May be used as a replacement to RFMD SBB4089Z a,b

More information

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX in a single amplifier.

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX in a single amplifier. Flat Gain, Ultra-Wideband Monolithic Amplifier 50Ω 0.01 to 12 GHz The Big Deal Ultra broadband performance Excellent Gain Flatness through 8 GHz Broadband without external matching components CASE STYLE:

More information

HMC599ST89 / 599ST89E. Features. The HMC599ST89(E) is ideal for: = +25 C MHz. Gain Variation Over Temperature MHz 0.

HMC599ST89 / 599ST89E. Features. The HMC599ST89(E) is ideal for: = +25 C MHz. Gain Variation Over Temperature MHz 0. HMCST / STE Typical Applications v2.3 GaAs phemt MMIC LNA, Ohm - 1 MHz Features The HMCST(E) is ideal for: High P1 Output Power: +1 m VHF / UHF Antennas HDTV Receivers CMTS Equipment CATV, Cable Modem

More information

4W Ultra Wide Band Power Amplifier 0.1GHz~22GHz

4W Ultra Wide Band Power Amplifier 0.1GHz~22GHz 4W Ultra Wide Band Power Amplifier 0.1GHz~22GHz Features Wideband Solid State Power Amplifier Gain: 40 db Typical Psat: +37 dbm Typical Noise Figure: 3dB Typical Supply Voltage: +24V (-NP) / +36V (-WP)

More information

DC to 30GHz Broadband MMIC Low-Power Amplifier

DC to 30GHz Broadband MMIC Low-Power Amplifier DC to 30GHz Broadband MMIC Low-Power Amplifier Features Integrated LFX technology: Simplified low-cost assembly Drain bias inductor not required Broadband 45GHz performance: Good gain (10 ± 1.25dB) 14.5dBm

More information

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic MGA-853.1 GHz 3 V, 17 dbm Amplifier Data Sheet Description Avago s MGA-853 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to

More information

NOT FOR NEW DESIGNS SGA5386Z. Absolute Maximum Ratings MHz. Parameter Rating Unit. Typical Performance at Key Operating Frequencies

NOT FOR NEW DESIGNS SGA5386Z. Absolute Maximum Ratings MHz. Parameter Rating Unit. Typical Performance at Key Operating Frequencies DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration

More information

100W Wide Band Power Amplifier 6GHz~18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz Gain db

100W Wide Band Power Amplifier 6GHz~18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz Gain db 100W Wide Band Power Amplifier 6GHz~18GHz Features Wideband Solid State Power Amplifier Psat: +50dBm Gain: 75 db Typical Supply Voltage: +48V On board microprocessor driven bias controller. Electrical

More information

RF & Microwave Amplifiers to 20GHz

RF & Microwave Amplifiers to 20GHz RF & Microwave Amplifiers to 20GHz Short form Catalog EuMW 2013 Low-Noise & Small Signal Power Amplifiers High Energy Physics Wideband GaN ECM Digital TV IMD Testing General Purpose Wideband Particle Physics,

More information

40MHz to 4GHz Linear Broadband Amplifiers

40MHz to 4GHz Linear Broadband Amplifiers MAX26 MAX26 0MHz to GHz Linear Broadband Amplifiers General Description The MAX26 MAX26 is a family of high-performance broadband gain blocks designed for use as a PA predriver, low-noise amplifier, or

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC476SC7 / 476SC7E v4.814 Typical

More information

HMC480ST89 / 480ST89E

HMC480ST89 / 480ST89E v2.7 HMCST9 / ST9E Typical Applications The HMCST9 / HMCST9E is an ideal RF/IF gain block & LO or PA driver for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test

More information

HMC639ST89 / 639ST89E

HMC639ST89 / 639ST89E Typical Applications The HMC39ST9(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Functional Diagram Electrical Specifications,

More information

5W Ultra Wide Band Power Amplifier 2-18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units

5W Ultra Wide Band Power Amplifier 2-18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units 7-3 RF-LAMBDA 5W Ultra Wide Band Power Amplifier 2-18GHz Features Wideband Solid State Power Amplifier Psat: + 37dBm Gain: 35 db Supply Voltage: +24V Electrical Specifications, T A = +25⁰C, Vcc = +24V

More information

DC to 30GHz Broadband MMIC Low-Noise Amplifier

DC to 30GHz Broadband MMIC Low-Noise Amplifier DC to 30GHz Broadband MMIC Low-Noise Amplifier Features Great 0.04-30GHz performance: Flat gain (10.25 ± 0.75dB) High Psat at 30GHz (21dBm) High P1dB at 30GHz (18dBm) Excellent input / output return loss

More information

Features. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1

Features. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1 AVT-53663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-53663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair

More information

Industrial radar sensing. April 2018

Industrial radar sensing. April 2018 Industrial radar sensing April 2018 The world is getting smarter An ever increasing number of sensors assist, enable and keep us safe everyday Radar is a smart sensor, with advanced sensing capabilities

More information