IXZ631DF12N100 RF Power MOSFET & Driver 1000 V 12 A
|
|
- Meghan Barton
- 6 years ago
- Views:
Transcription
1 DE75-N MOSFET and IXRFD6 Gate Driver Module Features Isolated substrate High isolation voltage (>5 V) Excellent thermal transfer Increased temperature and power cycling capability Low R DS(ON) Very low insertion inductance No Beryllium Oxide (BeO) or other hazardous materials Latch-up protected Low quiescent supply current RoHS compliant Advantages Optimized for RF and high speed Easy to mount, no insulators needed High power density Single package reduces size and heat sink area IXZ6DFN V A Ω Applications Class D or E switching generators Switch mode power supplies (SMPS) Pulse generators Transducer driver Description The IXZ6DFN is a CMOS high-speed, high-current gate driver and MOSFET combination module specifically designed for Class D, E, HF, and RF applications at up to 7 MHz, as well as other applications. The IXZ6DFN in pulse mode can provide 7 A of peak current while producing voltage rise and fall times of less than 5 ns, and minimum pulse widths of 8 ns. The input of the driver is fully immune to latch-up over the entire operating range. Designed with small internal delays, the IXZ6DFN is suitable for higher power operation where combiners are used. Its features and wide safety margin in operating voltage and power make the IXZ6DFN unmatched in performance and value. The IXZ6DFN is packaged in IXYSRF s low-inductance RF package incorporating layout techniques to minimize stray lead inductances for optimum switching performance. The IXZ6DFN is a surface-mountable device. Figure Functional diagram
2 Device Specifications Device Performance IXZ6DFN Parameter Value Maximum junction temperature 5 C Operating temperature range - 4 C to 85 C Weight 5.5 g Symbol Test Conditions Maximum Ratings fmax ID =.5 IDM5 A 7 MHz VDSS V VCC V IDSS VDS =.8 VDSS TJ = 5 C 5 ua VGS = V TJ = 5 C ma IDM5 TC = 5 C A IDM TC = 5 C, pulse limited by TJM 7 A IAR TC = 5 C A PT (MOSFET and Driver) TC = 5 C 65 W RthJC RthJHS Symbol Test Condition Minimum Typical Maximum RDS(ON) V CC = 5 V, I D =.5I DM5 A Pulse t µs, Duty Cycle % VCC 8 V 5 V V IN (Signal Input) - 5 V VCC +. V VIH (High Input Voltage) V CC = 5 V Ω.5 V V. C/W.4 C/W VIL (Low Input Voltage).8 V.8 V VHYS Input hysteresis. V ZIN f = MHz 9-j796 Ω Cstray COSS tondly toffdly tr tf f = MHz any one pin to the back plane metal V IN (V GS ) = V, V DS =.8 V DSS(max) f = MHz T C = 5 C V CC = 5 V µs pulse, I D = 6 A 46 pf pf 5 ns 8 ns.4 ns.55 ns
3 Propagation Delay (ns) Rise Time (ns) Fig. Input Threshold (V) Input Threshold vs. Vcc Voltage V IH V IL 5 5 Vcc Supply Voltage (V) Vcc Current (A) Fig IXZ6DFN Vcc Current vs. Frequency Vcc = V Frequency (MHz) Vcc = 5V Vcc = 8V Vcc = 8V Vcc = V Fig. 4 Fig. 5 Vcc Current (A) Vcc Current vs. Vcc Voltage 7 MHz MHz 5 MHz MHz Propagation Delay (ns) t ONDLY Propagation Delay vs. V CC Voltage 85 C 5 C - 4 C Vcc Supply Voltage (V) 5 5 Fig. 6 Fig. 7 t OFFDLY Propagation Delay vs. V CC Voltage C 4 5 C 5-4 C t R Rise Time vs. Vcc Voltage C.4 5 C. -4 C
4 Coss (pf) Fig. 8 Fig. 9 Fall Time (ns) Drain Current (A) Fig. Fig t F Fall Time vs. Vcc Voltage C OSS Ouput Capacitance vs. V DS RDSON (Ω) Drain Current (A) C IXZ6DFN 85 C 5 C R DSON vs. Vcc Voltage 5 5 Typical Ouput Characteristics Vcc = Vcc V to = 8-8V V Vcc = 8V V DS Drain to Source Voltage (V) V DS Drain to Source Voltage (V) Fig. Fig. Extended Ouput Characteristics 45 Vcc = V to 8 V Vcc =-8V Vcc = 8V V DS Drain to Source Voltage (V) Normalized RDS(ON) Normalized R DS(ON) vs. Temperature Temperature ( C)
5 IXZ6DFN Lead description SYMBOL FUNCTION DESCRIPTION Drain MOSFET drain Drain of power MOSFET. S/DGND MOSFET source Source of power MOSFET. This connection is common to DGND. Vcc Driver section supply voltage Power supply input for the logic input and driver output sections. IN Input Input signal. DGND Driver power ground The driver ground leads. Internally connected to all circuitry, these leads provide ground reference for the driver. These leads should be connected to a low-noise analog ground plane for optimum performance. None No connection to this lead. Figure 4 Package drawing
6 IXZ6DFN Figure 5 Test circuit S/DGND MOSFET & Driver Module S/DGND *Choke A common-mode choke is optional and can be used to help stabilize the threshold level due to ground bounce and to minimize false triggering. C BULK - Bulk capacitance helps to stabilize both the high voltage V DS for the drain circuit and low voltage Vcc for the driver circuit. Actual values vary according to load and operating conditions. For the driver section, tantalum capacitors are recommended for their fast energy delivery. C BYPASS - Ideally, the benefits realized through bypass capacitance increase as more is used by way of overlapping impedance curves, lowering the overall broadband impedance to ground. Typically a range of. µf,. µf,. µf capacitors in sufficient quantities give good results. Circuit board layout should be carefully considered to optimize operation. Each of the Vcc leads on the driver section should be treated as its own power supply lead. Bulk and bypass capacitors attached between drain and source leads should be placed symmetrically between the leads. Excessive parasitic inductance can result in V = L di/dt inductive voltage drops, causing unpredictable operation.
7 IXZ6DFN Figure 6 IXZ6DFN package outline REV October 4 IXYS RF An IXYS Company 69 Oakridge Dr., Suite Fort Collins, CO USA Fax: sales@ixyscolorado.com Web: IXYSRF reserves the right to change limits, test conditions, and dimensions without notice.
IXZ421DF12N100 RF Power MOSFET & DRIVER
Driver / MOSFET Combination DEIC421 Driver combined with a DE37-12N12A MOSFET Gate driver matched to MOSFET Features Isolated Substrate high isolation voltage (>V) excellent thermal transfer Increased
More informationIXZ4DF18N50 RF Power MOSFET & DRIVER
Driver / MOSFET Combination DEIC-55 Driver combined with IXZ38N50 MOSFET Gate driver matched to MOSFET Features Isolated substrate high isolation voltage (>500V) excellent thermal transfer Increased temperature
More information15 A Low-Side RF MOSFET Driver IXRFD615
Features High Peak Output Current Low Output Impedance Low Quiescent Supply Current Low Propagation Delay High Capacitive Load Drive Capability Wide Operating Voltage Range Applications RF MOSFET Driver
More information30 A Low-Side RF MOSFET Driver IXRFD631
A Low-Side RF MOSFET Driver IXRFD Features High Peak Output Current Low Output Impedance Low Quiescent Supply Current Low Propagation Delay High Capacitive Load Drive Capability Wide Operating Voltage
More informationIXRFSM18N50 Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings V DSS T
More informationDEIC Ampere Low-Side Ultrafast RF MOSFET Driver
DEIC Ampere Low-Side Ultrafast RF MOSFET Driver Features Built using the advantages and compatibility of CMOS and IXYS HDMOS TM processes Latch-Up Protected High Peak Output Current: A Peak Wide Operating
More information600 V 10 A. IXRFFB60110 Silicon Carbide Full Wave Bridge Rectifier. Description. Figure 1 Functional Diagram
IXRFFB611 Features Silicon carbide Schottky diodes No reverse recovery for soft turn-off Temperature independent switching behavior Low leakage current Easy to mount, no insulators needed High power density
More informationDE N09A RF Power MOSFET
N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings V DSS T J = C to 15 C 2 V V DGR T J = C to 15 C;
More informationDE N10A RF Power MOSFET
DE37-2NA N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings V DSS T J = 2 C to 1 C V V DGR T J = 2
More informationDE N21A RF Power MOSFET
DE375-51N21A N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching 5MHz Maximum Frequency Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to C 5 V V DGR T J = 25 C to C; R
More informationDE N12A RF Power MOSFET
N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching MHz Maximum Frequency Symbol Test Conditions Maximum Ratings V DSS T J = C to C V V DGR T J = C to C; R GS = 1 MΩ V V GS Continuous
More informationDE N44A RF Power MOSFET
DE475-51N44A Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 15 C 5 V V DGR T J = 25 C to 15 C; R GS = 1 MΩ 5 V V GS Continuous ±2 V V GSM Transient ±3 V I D25 T c = 25 C 48 A I DM T c = 25
More informationDE N21A RF Power MOSFET
Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 15 C 1 V V DGR T J = 25 C to 15 C; R GS = 1 MΩ 1 V V GS Continuous ±2 V V GSM Transient ±3 V I D25 T c = 25 C 24 A I DM T c = 25 C, pulse width
More informationDE N20A RF Power MOSFET
DE475-2N2A N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 15 C V V DGR T J = 25 C to 15 C; R GS = 1 MΩ V V GS Continuous
More informationDE N16A RF Power MOSFET
N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 5 C 5 V V DGR T J = 25 C to
More informationDE N15A RF Power MOSFET
N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching 5MHz Maximum Frequency Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 5 C V V DGR T J = 25 C to 5 C; R GS = MΩ V V
More informationDE N04A RF Power MOSFET
DE15-51NA N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings V DSS T J = 5 C to 15 C 5 V V DGR T J = 5 C to 15 C; R GS = 1 MΩ 5 V V GS Continuous
More informationDE N09A RF Power MOSFET
N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings V DSS T J = 2 C to 1 C V V DGR T J = 2 C to 1 C;
More informationIXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI 14 Ampere Low-Side Ultrafast MOSFET and IGBTDrivers. General Description
Ampere Low-Side Ultrafast MOSFET and IGBTDrivers Features Built using the advantages and compatibility of CMOS and IXYS HDMOS TM processes Latch-Up Protected Over Entire Operating Range High Peak Output
More informationP-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2
Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68
More informationMOSFET Full Bridge Hybrid
PRELIMINARY 500V, 25A, 13MHz MOSFET Full Bridge Hybrid The DRF1510 is a full bridge hybrid containing four high power gate drivers and four power MOSFETs. It was designed to provide the system designer
More informationSMD Type. P-Channel MOSFET SI2333DS-HF (KI2333DS-HF) Features. Absolute Maximum Ratings Ta = 25
P-Channel SOT-.9 -.. -. Unit: mm Features VDS (V) =-V ID =-5. A (VGS =-.5V) RDS(ON) < mω (VGS =-.5V) RDS(ON) < mω (VGS =-.5V). -..95 -..9 -.. -..55.. -. +.5 RDS(ON) < 59mΩ (VGS =-.V) Pb Free Package May
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube
N-channel 600 V, 0.045 Ω typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW56N60M2-4 650 V 0.055 Ω 52 A Excellent switching
More informationD AB Z DETAIL "B" DETAIL "A"
QJD1211 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Split Dual SiC MOSFET Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q P Q U B
More informationN-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage
N-Channel IRLML (KRLML) SOT-2 2.9 -. +..4 -. +. Unit: mm Features VDS (V) = V ID =.6A (VGS = V) RDS(ON) < 22mΩ (VGS = V) RDS(ON) < 25mΩ (VGS = 4.5V) G 2.4 -. +. 2.95 -. +..9 -. +.. -. +. 5.4. -. +.5 S
More informationSX3439K. Main Product Characteristics I D. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified)
Main Product Characteristics V (BR)DSS 20V -20V 380mΩ@ 4.5V 520mΩ@-4.5V R DS(on) 450mΩ@2.5V 700mΩ@-2.5V 800mΩ@1.8V 950mΩ(TYP)@-1.8V 0.75A -0.66A SOT-563 Schematic Diagram Features and Benefits Advanced
More informationIXDD415SI Dual 15 Ampere Low-Side Ultrafast MOSFET Driver
Dual 15 Ampere Low-Side Ultrafast MOSFET Driver Features Built using the advantages and compatibility of CMOS and IXYS HDMOS TM processes Latch-Up Protected High Peak Output Current: Dual 15A Peak Wide
More informationN-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID STFU13N65M2 650 V 0.43 Ω 10A 1 2 3
More informationIXDI509 / IXDN Ampere Low-Side Ultrafast MOSFET Drivers. Package
Features Built using the advantages and compatibility of CMOS and IXYS HMOS TM processes Latch-Up protected up to 9 Amps High 9A peak output current Wide operating range:.v to V - C to + C extended operating
More informationN & P-Channel 100-V (D-S) MOSFET
N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives
More information2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings
PD-9732 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2N7624U3 IRHLNJ79734 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ79734 K Rads (Si).72Ω
More informationn Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International
More information2N7606U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL TECHNOLOGY. Absolute Maximum Ratings
PD-973B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ7734 K Rads (Si).35Ω 22A* IRHLNJ7334 3K Rads (Si).35Ω 22A* 2N766U3
More informationN-channel 600 V, Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages. Features STW42N60M2-EP.
N-channel 600 V, 0.076 Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP D²PAK
More informationPFP15T140 / PFB15T140
FEATURES 1% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower R DS(ON) : 6. mω (Typ.) @ =1V 15V N-Channel
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFH18N60M2 18N60M2 TO-220FP wide creepage Tube
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STFH18N60M2 650 V 0.28 Ω 13 A Extremely
More informationN-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package. Features. Description.
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STFH10N60M2 650 V 0.60 Ω 7.5 A
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STF5N60M2 5N60M2 TO-220FP Tube
N-channel 600 V, 1.3 Ω typ., 3.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@ TJmax RDS(on) max. ID STF5N60M2 650 V 1.4 Ω 3.5 A Extremely low gate
More informationIRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary
PD-9797C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67234 K Rads (Si).2Ω 2.4A JANSR2N7593U3 IRHNJ63234 3K Rads (Si).2Ω
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STW48N60M2-4 48N60M2 TO247-4 Tube
N-channel 600 V, 0.06 Ω typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V DS @ T Jmax. R DS(on)max. I D STW48N60M2-4 650 V 0.07 Ω 42 A Excellent switching
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STF24N60DM2 24N60DM2 TO-220FP Tube
N-channel 600 V, 0.175 Ω typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID 650 V 0.200 Ω 18 A TO-220FP Fast-recovery body
More informationN-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID 650 V 0.38 Ω 11 A Figure 1:
More informationIRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching
PD-9586D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ673 JANSR2N7587U3 V, N-CHANNEL REF: MIL-PRF-95/746 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number
More informationSMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) Features. Absolute Maximum Ratings Ta = 25
P-Channel Enhancement Features VDS (V) =-V ID =-5.A (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.8V). -. SOT-.95 -..9 -.. -..9 -.. -..55. Unit: mm. -. +.5 G S
More informationSTB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
STB20N95K5, STF20N95K5, STP20N95K5, N-channel 950 V, 0.275 Ω typ., 17.5 A MDmesh K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 Datasheet packages - production data Features Order code V DS R DS(on)
More informationFeatures. Table 1: Device summary Order code Marking Package Packing STW75NF30 75NF30 TO-247 Tube
N-channel 300 V, 35 mω typ., 60 A STripFET II Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW75NF30 300 V 45 mω 60 A 320 W TO-247 1 2 3 Exceptional
More informationPreliminary Technical Information IXDI514 / IXDN Ampere Low-Side Ultrafast MOSFET Drivers
Preliminary Technical Information IXI / IXN Ampere Low-Side Ultrafast MOSFET rivers Features Built using the advantages and compatibility of CMOS and IXYS HMOS TM processes Latch-Up Protected over entire
More informationIRHF57034 THRU-HOLE (TO-39) REF: MIL-PRF-19500/701. Absolute Maximum Ratings PD-93791D
PD-9379D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF5734 K Rads (Si).48Ω 2A* JANSR2N7492T2 IRHF5334 3K Rads (Si).48Ω 2A*
More informationSURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary
PD-9454A HEXFET POWER MOSFET SURFACE MOUNT (SMD-) IRF5N52 V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N52 -V.6Ω -3A Fifth Generation HEXFET power MOSFETs from International Rectifier
More information2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary
PD-9736 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) 2N763M2 IRHLA797Z4 6V, Quad P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLA797Z4 K Rads
More informationVGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A
PD-9726A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) ID IRHLQ7724 K Rads (Si).Ω 2.6A IRHLQ7324 3K Rads (Si).Ω 2.6A International
More informationHEXFET MOSFET TECHNOLOGY
PD-90712C POWER MOSFET THRU-HOLE (TO-254) IRFM360 400V, N-CHNNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23 HEXFET MOSFET technology is the key to International Rectifier
More informationPOWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C
PD-94236C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-) IRHN5725SE 2V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN5725SE K Rads (Si).6Ω 3A SMD- International
More informationTPH3207WS TPH3207WS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) Absolute Maximum Ratings (T C =25 C unless otherwise stated)
PRODUCT SUMMARY (TYPICAL) V DS (V) 650 R DS(on) (m ) 35 Q rr (nc) 175 Features Low Q rr Free-wheeling diode not required Quiet Tab for reduced EMI at high dv/dt GSD pin layout improves high speed design
More informationAPT34N80B2C3G APT34N80LC3G
APT3NB2C3G APT3NLC3G *G Denotes RoHS Compliant, Pb Free Terminal Finish. V 3A.15Ω Super Junction MOSFET T-MAX COOLMOS TO-26 Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate
More informationHCD80R600R 800V N-Channel Super Junction MOSFET
HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More information5.0V 5.0V. 20µs PULSE WIDTH Tj = 25 C. Tj = 150 C. V DS, Drain-to-Source Voltage (V) T J = 150 C 1.5. V GS, Gate-to-Source Voltage (V)
9MT050XF "FULL-BRIDGE" FREDFET MTP HEXFET Power MOSFET Features Low On-Resistance High Performance Optimised Built-in Fast Recovery Diodes Fully Characterized Capacitance and Avalanche Voltage and Current
More informationIRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C.
PD-975C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-8) Product Summary Part Number BVDSS RDS(on) ID IRFE230 200V 0.40Ω 5.5A IRFE230 JANTX2N6798U JANTXV2N6798U REF:MIL-PRF-9500/557
More information2N7620M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary
PD-9735 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) Product Summary Part Number Radiation Level RDS(on) ID IRHLA77Z4 K Rads (Si).6Ω.8A IRHLA73Z4 3K Rads (Si).6Ω.8A 2N762M2
More informationPrerelease Product(s) - Prerelease Product(s)
N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh K5 Power MOSFET in a TO-220FP wide creepage package Figure 1: Internal schematic diagram Features Order code VDS Datasheet - preliminary data RDS(on) max. ID PTOT
More informationIRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/ V, N-CHANNEL
PD - 93986A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)
More information2N7582T1 IRHMS V, N-CHANNEL. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Absolute Maximum Ratings PD-96958B
PD-96958B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 2N7582T IRHMS6764 5V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHMS6764 K Rads (Si).9Ω 45A*
More informationTECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A
2N7632UC IRHLUC767Z4 RADIATION HARDENED 6V, Combination N-P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level R DS(on) I D CHANNEL IRHLUC767Z4
More information2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary
PD-97573 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 2N767UC IRHLUC77Z4 6V, DUAL-N CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLUC77Z4 K Rads (Si).75Ω.89A
More informationSMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25
SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38
More informationHEXFET MOSFET TECHNOLOGY
PD-91551D POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) ID IRFN350 0.315 Ω 14A IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY
More informationIRHF57133SE THRU-HOLE (TO-39) REF: MIL-PRF-19500/706. Absolute Maximum Ratings
PD - 94334B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF5733SE JANSR2N7497T2 3V, N-CHANNEL REF: MIL-PRF-95/76 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number
More informationOrder code V DS R DS(on) max. I D
N-channel 6 V,.23 Ω typ., 13 A MDmesh M2 EP Power MOSFET in an I²PAK package TAB Features Order code V DS R DS(on) max. I D STI2N6M2-EP 6 V.278 Ω 13 A I²PAK D(2, TAB) 1 2 3 Extremely low gate charge Excellent
More informationPFU70R360G / PFD70R360G
FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power
More informationN-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID 650 V 0.18 Ω 20 A 1 2 3 Extremely low
More informationIRHNM57110 SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743. Product Summary. Absolute Maximum Ratings PD-97192C
PD-9792C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM57 JANSR2N753U8 V, N-CHANNEL REF: MIL-PRF-95/743 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number
More informationIRHNM SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749. Product Summary. Absolute Maximum Ratings
PD-9779B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM597 JANSR2N756U8 V, P-CHANNEL REF: MIL-PRF-95/749 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number
More informationSTB22NM60N, STF22NM60N, STP22NM60N
Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages TAB Features 3 1 2 D PAK TAB 1 2 3 TO-220FP Order code STB22NM60N V DS @ T jmax. R DS(on) max.
More informationParameter Symbol Limit Unit IDM 20 A T A = PD T A =100
Features: Super high dense cell design for low R DS(ON) Rugged and reliable Surface Mount Package B VDSS =20V, R DS(ON) =24.5mΩ ID=6A Application DC-DC converters Power management in portable and Battery-powered
More informationI2-PAK I-PAK. TC = 25 C unless otherwise noted D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@V GS = 10 V This advanced technology has - been Low
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF4N90K5 4N90K5 TO-220FP Tube
N-channel 900 V, 1.90 Ω typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID STF4N90K5 900 V 2.10 Ω 4 A TO-220FP Figure 1: Internal
More informationIRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/ V, N-CHANNEL
PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)
More informationIXDF502 / IXDI502 / IXDN502
IXDF / IXDI / IXD Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Built using the advantages and compatibility of CMOS and IXYS HDMOS TM processes Latch-Up Protected up to Amps High A Peak Output
More informationDE N06A. RF Power MOSFET. V DSS = 1000 V I D25 = 8 A R DS(on) = 1.6 Ω P DC = 590 W
N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings V DSS T J = 5 C to 50 C 000 V V DGR T J = 5 C to 50 C; R GS = MΩ 000 V V GS Continuous
More informationIXRFD615X2 Application Note Full-Bridge Resonant Generator
IXRFD615X2 Application Note RF Power Capabilities of the IXRFD615X2 MOSFET Gate Driver in a Resonant Full-Bridge Configuration Gilbert Bates IXYS Colorado Abstract The IXRFD615X2 dual 15 A MOSFET driver
More informationTPH3202PS TPH3202PS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) TO-220 Package. Absolute Maximum Ratings (T C =25 C unless otherwise stated)
PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI GSD pin layout improves high speed design RoHS
More informationS2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6
Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.
More informationIRFF9130 JANS2N6849 JANTXV2N V, P-CHANNEL. Absolute Maximum Ratings. Features: 1 PD D. REPETITIVE AVALANCHE AND dv/dt RATED
PD - 90550D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF9130-100V 0.30Ω -6.5A IRFF9130 JANTX2N6849 JANTXV2N6849 JANS2N6849
More informationFeatures. Description. AM01476v1. Table 1: Device summary Order code Marking Package Packaging STWA40N95K5 40N95K5 TO-247 Tube
STWA40N95K5 N-channel 950 V, 0.110 Ω typ., 38 A MDmesh K5 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STWA40N95K5 950 V 0.130 Ω 38
More informationAutomotive-grade N-channel 950 V, Ω typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 package. Features. Description.
Automotive-grade N-channel 950 V, 0.280 Ω typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STW22N95K5 950 V 0.330 Ω 17.5
More informationSTB13N60M2, STD13N60M2
STB13N60M2, STD13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages Datasheet - production data Features Order code VDS@TJMAX. RDS(on) max. ID STB13N60M2 STD13N60M2
More informationFeatures. Description. Table 1: Device summary. Order code Marking Package Packing STW75N60M6 75N60M6 TO-247 Tube
N-channel 600 V, 32 mω typ., 72 A MDmesh M6 Power MOSFET in TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID STW75N60M6 600 V 36 mω 72 A 3 2 1 TO-247 Figure 1: Internal
More informationIRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C. 1 TECHNOLOGY. Product Summary MO-036AB
PD-94432C RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36) Product Summary Part Number Radiation Level RDS(on) ID IRHG57 K Rads (Si).29Ω.6A IRHG53 3K Rads (Si).29Ω.6A IRHG54 5K Rads (Si).29Ω.6A IRHG58
More informationTHRU-HOLE (Tabless - Low-Ohmic TO-254AA)
PD-96973A RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) ID IRHMB57Z6 K Rads (Si).55Ω 45A* IRHMB53Z6 3K Rads (Si).55Ω 45A*
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STB20N90K5 20N90K5 D²PAK Tape and reel
N-channel 900 V, 0.21 Ω typ., 20 A MDmesh K5 Power MOSFET in a D²PAK package Datasheet - production data Features TAB Order code VDS RDS(on) max. ID STB20N90K5 900 V 0.25 Ω 20 A 2 3 1 D²PAK Industry s
More informationIRHNJ57133SE SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/704 TECHNOLOGY. Absolute Maximum Ratings
PD - 94294C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ5733SE JANSR2N7485U3 3V, N-CHANNEL REF: MIL-PRF-95/74 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STWA48N60DM2 48N60DM2 TO-247 long leads Tube
N-channel 600 V, 0.065 Ω typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code VDS RDS(on) max. ID STWA48N60DM2 600 V 0.079 Ω 40 A Fast-recovery
More informationHCS90R1K5R 900V N-Channel Super Junction MOSFET
HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationN-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description
N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max. ID Ptot STFU10NK60Z 600 V 0.75 Ω 10
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N7F6 110N7F6 TO-220 Tube
N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max. I D P TOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W TO-220
More informationHCS80R850R 800V N-Channel Super Junction MOSFET
HCS80R850R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More information235 W Maximum Power Dissipation (whole module) 470 T J Junction Operating Temperature -40 to 150. Torque strength
Discontinued PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) (m ) 30 GaN Power Hybrid HEMT Half-Bridge Module Features High frequency operation Free-wheeling diode not required Applications Compact DC-DC
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STF140N6F7 140N6F7 TO-220FP Tube
N-channel 60 V, 0.0031 Ω typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF140N6F7 60 V 0.0035 Ω 70 A 33 W Among the
More informationIRHNJ V, N-CHANNEL POWER MOSFET SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/703. Absolute Maximum Ratings. Product Summary
PD-93754G RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ573 K Rads (Si).6Ω 22A* JANSR2N748U3 IRHNJ533 3K Rads (Si).6Ω
More information